JPS636843A - Substrate surface treatment - Google Patents
Substrate surface treatmentInfo
- Publication number
- JPS636843A JPS636843A JP14820886A JP14820886A JPS636843A JP S636843 A JPS636843 A JP S636843A JP 14820886 A JP14820886 A JP 14820886A JP 14820886 A JP14820886 A JP 14820886A JP S636843 A JPS636843 A JP S636843A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- wafer
- treating solution
- cylindrical body
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000004381 surface treatment Methods 0.000 title claims description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 50
- 238000004140 cleaning Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 230000000717 retained effect Effects 0.000 claims description 5
- 230000035515 penetration Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005507 spraying Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体ウェハやガラス基板等の薄板状基板（
以下、基板という）の表面処理、特に基板を回転させな
がら、基板表面に処理液を散布供給して、基板の表面処
理を行う表面処理方法に関し、特に基板の裏面に処理液
が回りこむことを防止する方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to thin plate-like substrates (such as semiconductor wafers and glass substrates).
Regarding the surface treatment of a substrate (hereinafter referred to as a substrate), particularly the surface treatment method of spraying and supplying a treatment liquid onto the surface of the substrate while rotating the substrate, it is particularly important to prevent the treatment liquid from getting around to the back side of the substrate. Regarding how to prevent.
［従来技術］
回転する基板の表面に処理液を供給して、表面処理を行
う際に、基板の裏面に処理液が付着すること、いわゆる
「裏回り」を防ぐために、基板の裏面に洗浄液を吹きあ
てるようにする手段は、たとえば特開昭５５−１１３１
１号公報に記載されているように、公知である。[Prior art] When a processing liquid is supplied to the surface of a rotating substrate to perform surface treatment, cleaning liquid is applied to the back side of the substrate in order to prevent the processing liquid from adhering to the back side of the substrate, so-called "back-turning". For example, a method for spraying is disclosed in Japanese Patent Application Laid-Open No. 55-1131.
It is publicly known as described in Publication No. 1.
また、本出願人による特開昭５７−１４７４７８号公報
には、第４図示のように、基板（１）を載置して回転さ
せる回転チャック（２）の周囲に、多数の上向きの細孔
（４）が小ピツチで穿設されている環状管体（３）を設
置し、それらの細孔（４）から水を噴出させて、基板（
１）の裏面と環状管体（３）との間に水膜（５）を形成
することにより、処理液の裏回りを防止するようにした
装置が、記載されている。Further, in Japanese Patent Application Laid-Open No. 57-147478 by the present applicant, as shown in FIG. An annular tube (3) in which holes (4) are perforated with small pitches is installed, water is spouted from these pores (4), and the substrate (
A device is described in which a water film (5) is formed between the back surface of the device (1) and the annular tube (3) to prevent the processing liquid from turning around.
［発明が解決しようとする問題点］
回転する基板の下面周縁部に、洗浄液あるいは水（以下
、洗浄液等という）を噴射して、処理液の裏回りを防ぐ
上述の手段は、洗浄液等の供絡部分より内方に付着した
処理液を除去することができないので１表面処理に際し
ては、連続的に洗浄液等を噴射しつづける必要がある。[Problems to be Solved by the Invention] The above-mentioned means of spraying cleaning liquid or water (hereinafter referred to as cleaning liquid, etc.) onto the peripheral edge of the lower surface of a rotating substrate to prevent the processing liquid from going backwards does not require the supply of cleaning liquid, etc. Since it is not possible to remove the processing liquid adhering inward from the interlocking portion, it is necessary to continuously spray the cleaning liquid or the like during one surface treatment.
一方、基板の表面に塗布したフォトレジストにパターン
を露光し、現像処理をする場合等においては、現像温度
を所要値に保持しながら、現像液を基板に供給しなけれ
ばならない。このためには、−般に現像液を温調装置を
介して供給するようにしているが、基板の下面に連続的
に噴射される洗浄液等の温度が、現像液の設定温度に対
して差違があると、現像温度が変動して、処理ムラが発
生する問題がある。On the other hand, when a pattern is exposed and developed on a photoresist coated on the surface of a substrate, a developer must be supplied to the substrate while maintaining the development temperature at a required value. For this purpose, the developer is generally supplied through a temperature control device, but the temperature of the cleaning solution, etc. that is continuously sprayed onto the bottom surface of the substrate is different from the set temperature of the developer. If there is, there is a problem that the developing temperature fluctuates and uneven processing occurs.
この対策としては、洗浄液等の供給システム側にも温調
装置を設置して、現像液の温度に合致させればよいこと
は云うまでもないが、上述のような水膜を連続的に形成
させるためには、洗浄液等の噴射量がかなり大量となり
、これを所要温度に制御するためには、大容量の温調装
置が必要となって、設備コスト及びランニングコストの
増加を招ぐ問題がある。As a countermeasure against this, it goes without saying that a temperature control device should be installed on the supply system side of the cleaning liquid, etc., to match the temperature of the developer, but it would also be possible to continuously form a water film as described above. In order to do this, the amount of cleaning liquid etc. to be sprayed is quite large, and in order to control it to the required temperature, a large-capacity temperature control device is required, which causes the problem of increased equipment costs and running costs. be.
本発明は、これらの従来手法とは全く異なる発想に基く
「裏回り」防止手段を提供するものである。The present invention provides means for preventing "backtracking" based on an idea completely different from these conventional methods.
ｃ問題を解決するための手段］
本発明は、基板の裏面周縁部に回りこんだ処理液自体に
生じる毛管現象を利用して、処理液の「裏回り」を制限
するもので、具体的には、基板を保持して回転させるチ
ャックの周囲に、チャックと同心に筒体を設置し、チャ
ックに保持された基板の裏面周縁部が、この筒体上面部
に対して、たとえば０．５ ｍｍ程度の僅かな隙間をも
って対向するようにし、この隙間に浸入した処理液を、
毛管現象により保持し、それ以上、内方へは浸入しない
ようにしたものである。Means for Solving Problem c] The present invention utilizes the capillary phenomenon that occurs in the processing liquid itself that has circulated around the periphery of the back surface of the substrate to limit the "backward circulation" of the processing liquid. In this method, a cylindrical body is installed around a chuck that holds and rotates the substrate concentrically with the chuck, and the back peripheral edge of the substrate held by the chuck is, for example, 0.5 mm away from the top surface of the cylindrical body. They are placed so that they face each other with a slight gap between them, and the processing liquid that has entered this gap is
It is retained by capillary action and is prevented from penetrating further inward.
［作用］
基板の表面に供給された現像液等の処理液が、基板の周
縁から裏面に回りこむと、筒体の上面と基板裏面との間
隔が小さいため、毛管現象によって両者の間に保持され
て、それ以上、基板の内方へは侵入せず、裏回りを基板
の周縁部のみに制限することができる。[Function] When processing liquid such as developer supplied to the front surface of the substrate flows from the periphery of the substrate to the back surface, the gap between the top surface of the cylinder and the back surface of the substrate is small, so it is retained between the two by capillary action. Then, it does not penetrate into the inside of the substrate any more, and the back side can be limited to only the peripheral edge of the substrate.
［実施例］
第１図は本発明の１実施例装置の概要を示す支所面図、
第２図は同じく平面図である。[Example] Fig. 1 is a branch plan view showing an outline of a device according to an embodiment of the present invention;
FIG. 2 is also a plan view.
被処理ウェハ（１１）を、回転チャック（１２）に真空
吸着等の手段により保持して回転させ、図示しない処理
液供給管から、所要の処理液をウェハ（１１）の表面に
供給する。The wafer (11) to be processed is held and rotated by a rotary chuck (12) by means such as vacuum suction, and a required processing liquid is supplied to the surface of the wafer (11) from a processing liquid supply pipe (not shown).
装置の基台（１３）に、円筒体（１４）を装着する。円
筒体（１４）は、チャック（１２）の回転中心と同心の
円筒状で、その上端部（１５）は、チャック（１２）に
装着されたウェハ（１１）の裏面に、たとえば０．５
ｍｍ程度の僅かな隙間をあけて対向するように、平面状
に形成してあり、この平面状に形成した上端部（１５）
の幅、すなわち円筒体（１４）の厚みは、２〜３ｍｍで
ある。なお、この上端部（１５）とウェハ（１１）の裏
面との隙間や、上端部（１５）の幅は、上記寸法に限定
されるものではなく、処理液の粘度等の条件により最適
寸法が変ってくるが、要するに、上端部（１５）とウェ
ハ（１１）の裏面との間に、毛管現象によって処理液が
保持されるような寸法とする。The cylindrical body (14) is mounted on the base (13) of the device. The cylindrical body (14) has a cylindrical shape concentric with the rotation center of the chuck (12), and its upper end (15) is attached to the back surface of the wafer (11) mounted on the chuck (12), for example by 0.5 mm.
The upper end portions (15) are formed in a planar shape so as to face each other with a slight gap of about mm.
The width, that is, the thickness of the cylindrical body (14) is 2 to 3 mm. Note that the gap between this upper end (15) and the back surface of the wafer (11) and the width of the upper end (15) are not limited to the above dimensions, and the optimum dimensions may be determined depending on conditions such as the viscosity of the processing liquid. Although the dimensions may vary, in short, the dimensions are such that the processing liquid is retained between the upper end (15) and the back surface of the wafer (11) by capillary action.
また１円筒体（１４）の外径は第２図示のように、ウェ
ハ（１１）に形成しであるオリエンテーション・フラッ
ト（ｌｌａ）に内接する寸法、もしくはこれより小さい
寸法としである。なお、基板が四角形のガラス基板であ
るような場合には、その外周縁に内接する寸法、もしく
はそれより小さい寸法とすればよい。As shown in the second figure, the outer diameter of the cylindrical body (14) is a dimension that is inscribed in the orientation flat (lla) formed on the wafer (11), or a dimension smaller than this. Note that when the substrate is a rectangular glass substrate, the size may be set to be inscribed in the outer periphery of the substrate, or smaller than that.
円筒体（１４）の適所には、ウェハ（１１）の下面に向
けて洗浄液等を噴射するノズル（１６）を付設する。A nozzle (16) for spraying a cleaning liquid or the like toward the lower surface of the wafer (11) is attached to a suitable position of the cylindrical body (14).
また、下部の適所に、上端部（１５）から内壁面を流下
して底部に溜る処理液や、ノズル（１６）からの洗浄液
を円筒体の外側へ排出するための、排液孔（１７）を設
けである。図示実施例では、ノズル（１６）や排液孔（
１７）をそれぞれ１個のみ示しているが。In addition, a drainage hole (17) is provided at a suitable location in the lower part for draining the processing liquid that flows down the inner wall surface from the upper end (15) and accumulates at the bottom, and the cleaning liquid from the nozzle (16) to the outside of the cylindrical body. This is provided. In the illustrated embodiment, the nozzle (16) and the drain hole (
17), only one of each is shown.
これらは必要に応じて複数個を並設してもよいことは、
云うまでもない。The fact that multiple of these may be installed in parallel as necessary is
Needless to say.
上述装置により、ウェハ（１１）を回転させながら処理
液を供給すると、第３図示のように、ウェハ（１１）と
円筒体（１４）との間に、ウェハ（１１）の周縁から「
裏回り」により処理液（Ｌ）が浸入する。When the processing liquid is supplied by the above-mentioned device while rotating the wafer (11), as shown in the third figure, "
The processing liquid (L) enters from the inside.
このとき、ウェハ（１１）下面と円筒体（１４）上面と
の隙間が０．５ ｍｍ程度と狭いため、この隙間に入り
こんだ処理液（Ｌ）は、毛管現象により両者の間に保持
され、それ以上、内側へは浸入しない。すなわち、処理
液の「裏回り」を、円筒体（１４）の対向位置を限度と
して制限することができる。At this time, since the gap between the lower surface of the wafer (11) and the upper surface of the cylindrical body (14) is narrow, about 0.5 mm, the processing liquid (L) that has entered this gap is retained between the two by capillary action. It will not penetrate inside any further. That is, the "backward rotation" of the processing liquid can be limited to the opposing position of the cylindrical body (14).
円筒体（１４）が対向する位置までは、「裏回り」が生
じるが、これは所要の処理が終了して処理液の供給を停
止した後、ウェハ（１１）を回転させながら、ノズル（
１６）から洗浄液等を噴射すれば、ウェハ（１１）の下
面と円筒体（１４）の上面との隙間に、毛管現象により
残留している処理液が、洗浄液で置換され、かつ、隙間
から溢れ出た洗浄液の大部分は、遠心力によりウェハ（
１１）と円筒体（１４）との対向部から外側へ流出する
ので、容易に洗浄除去することができる。この場合、既
に現像等の処理が終了しているため、洗浄液等について
温度調節をする必要はなく、常温の洗浄液を使用すれば
よい。"Back-turning" occurs until the cylindrical body (14) faces the opposite position, but this is because after the required processing is completed and the supply of processing liquid is stopped, the wafer (11) is rotated and the nozzle (
16), the processing liquid remaining in the gap between the lower surface of the wafer (11) and the upper surface of the cylindrical body (14) is replaced by the cleaning liquid due to capillary action, and the cleaning liquid is prevented from overflowing from the gap. Most of the cleaning solution that comes out is transferred to the wafer (
11) and the cylindrical body (14) to the outside, it can be easily washed and removed. In this case, since processing such as development has already been completed, there is no need to adjust the temperature of the cleaning liquid, and it is sufficient to use a cleaning liquid at room temperature.
なお、筒体としては、上記実施例の円筒体に限定される
ものではなく、たとえば截頭円錐形の筒体でもよく、要
するに、基板の回転中心とほぼ同心で、基板裏面の周縁
部との間に微小な隙間を形成するような端部を備えた筒
体であればよい。The cylindrical body is not limited to the cylindrical body of the above embodiment, and may be a truncated conical cylinder, for example, which is approximately concentric with the rotation center of the substrate and aligned with the peripheral edge of the back surface of the substrate. Any cylindrical body may be used as long as it has end portions that form a small gap therebetween.
また、四角筒体、六角筒体等の角筒体を使用することも
できるが、円筒体の方がより有利である。Although square cylinders such as square cylinders and hexagonal cylinders can also be used, cylinders are more advantageous.
上記実施例は、本発明を現像処理に適用する場合につい
て説明したが、本発明方法はこれに限らず、感光液の塗
布など他の処理にも適用できることは、云うまでもない
。In the above embodiments, the present invention is applied to development processing, but it goes without saying that the method of the present invention is not limited to this, but can also be applied to other processing such as applying a photosensitive liquid.
［発明の効果］
（１）処理液の「裏回り」を、被処理基板の周縁部のみ
に制限し、それ以上、内方への処理液の浸入を防止する
ことができる。[Effects of the Invention] (1) The "backward circulation" of the processing liquid can be limited to only the peripheral edge of the substrate to be processed, and further inward penetration of the processing liquid can be prevented.
（２）従来のような洗浄液等を噴射して水膜を形成させ
る手段に比し、きわめて簡単な構成によって、効果的に
処理液の浸入を防止できる。(2) Compared to the conventional means of spraying a cleaning liquid or the like to form a water film, it is possible to effectively prevent the infiltration of the processing liquid with an extremely simple structure.
（３）洗浄液等は、処理終了後に基板の周縁部のみに付
着した処理液の除去のみに使用すればよく、処理工程中
には、洗浄液等を供給する必要がない。(3) The cleaning liquid etc. need only be used to remove the processing liquid adhering only to the peripheral edge of the substrate after the processing is completed, and there is no need to supply the cleaning liquid etc. during the processing process.
（４）温度条件を一定値に維持して処理すべき場合に、
洗浄液等は処理温度に影響しないので、処理液のみに温
度調節をすればよい。(4) When processing should be performed while maintaining the temperature conditions at a constant value,
Since the cleaning liquid and the like do not affect the processing temperature, it is only necessary to adjust the temperature of the processing liquid.
第１図は本発明の１実施例装置の支所面図、第２図は同
装置の平面図、第３図は被処理基板と壁体との間に処理
液が保持される状態を示す模式図、第４図は従来手段を
示す図である。
（１）・・・・基板、 （２）・・・・回転チ
ャック。
（３）・・・・管体、 （４）・・・・細孔、
（３）・・・・水膜。
（１１）・・・ウェハ、 （１２）・・・回転チ
ャック、（１３）・・・基台、 （１４）・・
・円筒体、（１６）・・・ノズル、 （１７）・
・・排液孔。
以上
’ｙｌｔ＋刀
／′FIG. 1 is a plan view of a branch of an apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of the same apparatus, and FIG. 3 is a schematic diagram showing a state in which a processing liquid is held between a substrate to be processed and a wall. 4 are diagrams showing conventional means. (1)...Substrate, (2)...Rotating chuck. (3)... tube body, (4)... pore,
(3)...Water film. (11)...Wafer, (12)...Rotary chuck, (13)...Base, (14)...
・Cylindrical body, (16)...nozzle, (17)・
・Drain hole. 'ylt+katana/'
Claims (2)
する基板表面処理方法において、基板の回転中心とほぼ
同心の筒体の端部を、基板の裏面周縁部に微小な隙間を
もって対向させ、基板の周縁部から裏面側へ回りこむ処
理液を上記隙間部に毛管現象により保持し、それ以上の
内方への浸入を制限するようにした基板表面処理方法。(1) In a substrate surface treatment method in which a processing liquid is supplied to the surface of a substrate while rotating the substrate, the end of a cylindrical body that is approximately concentric with the rotation center of the substrate is opposed to the periphery of the back surface of the substrate with a small gap. A method for treating a surface of a substrate, in which the treatment liquid flowing from the peripheral edge of the substrate to the back side is retained in the gap by capillary action, and further inward penetration is restricted.
の内側で基板の裏面へ、洗浄液もしくは洗浄用水の噴射
を行う特許請求の範囲第（１）項に記載の基板表面処理
方法。(2) The substrate surface treatment method according to claim (1), wherein after the surface treatment by supplying the treatment liquid is completed, a cleaning liquid or cleaning water is sprayed onto the back surface of the substrate inside the cylindrical body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14820886A JPS636843A (en) | 1986-06-26 | 1986-06-26 | Substrate surface treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14820886A JPS636843A (en) | 1986-06-26 | 1986-06-26 | Substrate surface treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636843A true JPS636843A (en) | 1988-01-12 |
| JPH0334207B2 JPH0334207B2 (en) | 1991-05-21 |
Family
ID=15447681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14820886A Granted JPS636843A (en) | 1986-06-26 | 1986-06-26 | Substrate surface treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636843A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5279926A (en) * | 1992-05-06 | 1994-01-18 | International Business Machines Corporation | Method and apparatus for removing vapor from a pressurized sprayed liquid in the manufacture of semiconductor integrated circuits |
| JP2003514379A (en) * | 1999-11-10 | 2003-04-15 | セミトゥール・インコーポレイテッド | Reactor for semiconductor wafer processing |
| US7267129B2 (en) | 1999-04-28 | 2007-09-11 | Sez Ag | Device and process for liquid treatment of wafer-shaped articles |
| JP2009277872A (en) * | 2008-05-14 | 2009-11-26 | Tokyo Electron Ltd | Substrate processing apparatus, substrate processing method, applying and developing apparatus, and storage medium |
| JP2009277870A (en) * | 2008-05-14 | 2009-11-26 | Tokyo Electron Ltd | Applying apparatus, applying method, applying developing apparatus, and storage medium |
| US7799695B2 (en) | 2000-10-31 | 2010-09-21 | Lam Research Ag | Device for liquid treatment of wafer-shaped articles |
| JP2011139099A (en) * | 2011-03-31 | 2011-07-14 | Dainippon Screen Mfg Co Ltd | Substrate peripheral edge processing apparatus and substrate peripheral edge processing method |
| JP2011159989A (en) * | 2011-03-31 | 2011-08-18 | Dainippon Screen Mfg Co Ltd | Apparatus and method for processing of substrate periphery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61162859U (en) * | 1985-03-29 | 1986-10-08 | ||
| JPS6262869U (en) * | 1985-10-07 | 1987-04-18 |
-
1986
- 1986-06-26 JP JP14820886A patent/JPS636843A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61162859U (en) * | 1985-03-29 | 1986-10-08 | ||
| JPS6262869U (en) * | 1985-10-07 | 1987-04-18 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5279926A (en) * | 1992-05-06 | 1994-01-18 | International Business Machines Corporation | Method and apparatus for removing vapor from a pressurized sprayed liquid in the manufacture of semiconductor integrated circuits |
| US7267129B2 (en) | 1999-04-28 | 2007-09-11 | Sez Ag | Device and process for liquid treatment of wafer-shaped articles |
| US7726323B2 (en) | 1999-04-28 | 2010-06-01 | Lam Research Ag | Device and process for liquid treatment of wafer-shaped articles |
| JP2003514379A (en) * | 1999-11-10 | 2003-04-15 | セミトゥール・インコーポレイテッド | Reactor for semiconductor wafer processing |
| US7799695B2 (en) | 2000-10-31 | 2010-09-21 | Lam Research Ag | Device for liquid treatment of wafer-shaped articles |
| US7988818B2 (en) | 2000-10-31 | 2011-08-02 | Lam Research Ag | Device for liquid treatment of wafer-shaped articles |
| JP2009277872A (en) * | 2008-05-14 | 2009-11-26 | Tokyo Electron Ltd | Substrate processing apparatus, substrate processing method, applying and developing apparatus, and storage medium |
| JP2009277870A (en) * | 2008-05-14 | 2009-11-26 | Tokyo Electron Ltd | Applying apparatus, applying method, applying developing apparatus, and storage medium |
| JP2011139099A (en) * | 2011-03-31 | 2011-07-14 | Dainippon Screen Mfg Co Ltd | Substrate peripheral edge processing apparatus and substrate peripheral edge processing method |
| JP2011159989A (en) * | 2011-03-31 | 2011-08-18 | Dainippon Screen Mfg Co Ltd | Apparatus and method for processing of substrate periphery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0334207B2 (en) | 1991-05-21 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |