JPH01100098A - Production of silicon carbide whisker - Google Patents
Production of silicon carbide whiskerInfo
- Publication number
- JPH01100098A JPH01100098A JP25743687A JP25743687A JPH01100098A JP H01100098 A JPH01100098 A JP H01100098A JP 25743687 A JP25743687 A JP 25743687A JP 25743687 A JP25743687 A JP 25743687A JP H01100098 A JPH01100098 A JP H01100098A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- silicon carbide
- molar ratio
- whiskers
- carrier gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 title description 3
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 7
- 238000000197 pyrolysis Methods 0.000 claims abstract description 4
- 150000003464 sulfur compounds Chemical class 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 abstract description 4
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 abstract description 3
- 125000003118 aryl group Chemical group 0.000 abstract description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002829 reductive effect Effects 0.000 abstract 2
- 239000012808 vapor phase Substances 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 150000004756 silanes Chemical class 0.000 description 6
- -1 siloxanes Chemical class 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012779 reinforcing material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- LJSQFQKUNVCTIA-UHFFFAOYSA-N diethyl sulfide Chemical compound CCSCC LJSQFQKUNVCTIA-UHFFFAOYSA-N 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 2
- LXUNZSDDXMPKLP-UHFFFAOYSA-N 2-Methylbenzenethiol Chemical compound CC1=CC=CC=C1S LXUNZSDDXMPKLP-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000209504 Poaceae Species 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- AAPLIUHOKVUFCC-UHFFFAOYSA-N trimethylsilanol Chemical compound C[Si](C)(C)O AAPLIUHOKVUFCC-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
皮果上１１里分！
本発明は、炭化ケイ素ウィスカの製造方法に関し、とく
に各種複合材料用の補強材として有用なウィスカの製造
方法に関する。[Detailed description of the invention] 11 leagues on the skin! The present invention relates to a method for producing silicon carbide whiskers, and particularly to a method for producing whiskers useful as reinforcing materials for various composite materials.
皿米■艮歪
炭化ケイ素ウィスカは、耐熱性、耐酸化性に優れ、かつ
高い強度を有するために、金属やセラミックスあるいは
樹脂材料等と組合せて種々の複合材料を製造することか
行われている。Because strained silicon carbide whiskers have excellent heat resistance, oxidation resistance, and high strength, they are combined with metals, ceramics, resin materials, etc. to produce various composite materials. .
かかる炭化ケイ素ウィスカを製造する方法としては、イ
ネ科植物の灰化残渣とカーボンブラックとを混合し、非
酸化性雰囲気中で高温処理する方法（特開昭５７−２０
９８１３）があるが、高温の熱処理が必要であり、純度
も低いという問題がある。A method for producing such silicon carbide whiskers is a method of mixing the ash residue of a grass family plant with carbon black and treating the mixture at high temperature in a non-oxidizing atmosphere (Japanese Patent Laid-Open No. 57-20
9813), but it requires high-temperature heat treatment and has low purity.
また、ケイ素−ハロゲン結合を有しない有機ケイ素化合
物を金属または金属化合物微粒子を種触媒として気相熱
分解させる方法（特開昭５９−９２２０）があるが、種
触媒の調製が容易でないうえ純度もまた低いという欠点
がある。In addition, there is a method (Japanese Patent Application Laid-Open No. 1983-9220) in which organosilicon compounds that do not have a silicon-halogen bond are thermally decomposed in the gas phase using metal or metal compound fine particles as a seed catalyst, but the preparation of the seed catalyst is not easy and the purity is low. It also has the disadvantage of being low.
”しよ゛と るロ 占
本発明は、従来技術によっては得ることができなかった
ような、複合材料用の補強材として適切な形状を有する
高純度の炭化ケイ素ウィスカの経済的な製造方法を提供
しようとするものである。The present invention provides an economical method for producing high-purity silicon carbide whiskers having a shape suitable as reinforcing materials for composite materials, which could not be obtained using prior art techniques. This is what we are trying to provide.
６ 占を”るための
かかる目的を達成することができる本発明の炭化ケイ素
ウィスカの製造方法は、有機ケイ素化合物または有機ケ
イ素化合物と炭化水素化合物との混合物を、イオウ化合
物を含有する還元性または不活性のキャリヤガスの存在
下に高温で気相熱分解するに当り、系中のケイ素と炭素
めモル比をＯ０１〜２とすることを特徴とするものであ
る。6. The method for producing silicon carbide whiskers of the present invention that can achieve the purpose of "improving the horoscope" comprises adding an organosilicon compound or a mixture of an organosilicon compound and a hydrocarbon compound to a reducing compound containing a sulfur compound or The method is characterized in that the molar ratio of silicon to carbon in the system is set to 001-2 during gas phase pyrolysis at high temperature in the presence of an inert carrier gas.
本発明において原料として用いられる有機ケイ素化合物
は、ケイ素−炭素結合を有するシラン類またはシロキサ
ン類などが用いられる。このうちシラン類としてはトリ
エチルシラン、テトラエチルシラン、ヘキサメチルジシ
ラン等のアルキル置換シラン類、テトラメトキシシラン
、テトラエトキシシラン等のアルコキシ置換シラン類、
芳香族置換シラン類などがあげられ、またシロキサン類
としてはへキサメチルジシロキサン、ジメチルポリシロ
キサン、メチルフェニルポリシロキサン等があげられる
。この他、トリメチルシラノールなどのシラノール類、
アルコキシ置換シロキサン類等も用いることができ、こ
れらの混合物または誘導体などもガス化が可能であれば
使用可能である。As the organosilicon compound used as a raw material in the present invention, silanes or siloxanes having a silicon-carbon bond are used. Among these, silanes include alkyl-substituted silanes such as triethylsilane, tetraethylsilane, and hexamethyldisilane; alkoxy-substituted silanes such as tetramethoxysilane and tetraethoxysilane;
Examples include aromatic substituted silanes, and examples of siloxanes include hexamethyldisiloxane, dimethylpolysiloxane, and methylphenylpolysiloxane. In addition, silanols such as trimethylsilanol,
Alkoxy-substituted siloxanes and the like can also be used, and mixtures or derivatives thereof can also be used as long as they can be gasified.
゛ 本発明において有機ケイ素化合物と混合して原料
として用いられる炭化水素化合物は、メタン、エタン、
プロパン等の脂肪族炭化水素類、ベンゼン、トルエン等
の芳香族炭化水素類が用いられるが、少量であれば酸素
などの他種の元素を含んでいても差支えない。゛ In the present invention, the hydrocarbon compounds used as raw materials by mixing with organosilicon compounds include methane, ethane,
Aliphatic hydrocarbons such as propane and aromatic hydrocarbons such as benzene and toluene are used, but other elements such as oxygen may also be included as long as they are in small amounts.
本発明において用いられるイオウ化合物は触媒として挙
動するもので、たとえば硫化水素、あるいはメチルメル
カプタン、エチルメルカプタン、゛トルエンチオール等
のメルカプタン類、またはジエチルスルフィド、チオフ
ェン等のチオエーテル類などが用いうる。イオウ化合物
が有機イオウ化合物であるときは、原料である前記の炭
化水素化合物の一部または全部に置き換えて用いること
ができる。また、イオウ化合物がケイ素を含む有機化合
物であるときは、原料である前記の有機ケイ素化合物の
少くとも一部に置き換えて用いることができ、このよう
な触媒の例としてたとえばＴ−メルカプトプロピル・ト
リメトキシシランなどのメルカプト変性シラン類やメル
カプト変性ポリシロキサンなどが挙げられる。The sulfur compound used in the present invention behaves as a catalyst, and for example, hydrogen sulfide, mercaptans such as methyl mercaptan, ethyl mercaptan, and toluenethiol, or thioethers such as diethyl sulfide and thiophene can be used. When the sulfur compound is an organic sulfur compound, it can be used in place of part or all of the aforementioned hydrocarbon compound as a raw material. Further, when the sulfur compound is an organic compound containing silicon, it can be used in place of at least a part of the above-mentioned organosilicon compound as a raw material. Examples include mercapto-modified silanes such as methoxysilane and mercapto-modified polysiloxanes.
本発明において用いられるキャリヤガスは、還元性また
は不活性のガスであり、水素、窒素、アルゴン等が挙げ
られるが、中でも水素が好ましく用いられる。The carrier gas used in the present invention is a reducing or inert gas, and examples thereof include hydrogen, nitrogen, and argon, among which hydrogen is preferably used.
本発明においては、原料となる有機ケイ素化合物または
これと炭化水素化合物との混合物は、触媒と共にキャリ
ヤガスによって高温反応帯域に送られるが、この際、反
応ガス中に含まれるケイ素と炭素とのモル比が０．１〜
２であることが必要である。すなわち、モル比が０．１
より低いときは黒色の炭素質のウィスカが生成し、純度
のよい炭化ケイ素ウィスカは得られない、またモル比が
２を超えると粉末状の炭化ケイ素やシリカの生成が多く
なり、これまた純度のよい炭化ケイ素は得られない。In the present invention, an organosilicon compound or a mixture of it and a hydrocarbon compound as a raw material is sent to a high temperature reaction zone together with a catalyst by a carrier gas, but at this time, the molar ratio of silicon and carbon contained in the reaction gas Ratio is 0.1~
It is necessary to be 2. That is, the molar ratio is 0.1
When the molar ratio is lower, black carbonaceous whiskers are produced and silicon carbide whiskers with good purity cannot be obtained.When the molar ratio exceeds 2, powdery silicon carbide and silica are produced, which also impairs the purity. Good silicon carbide cannot be obtained.
また、触媒としてのイオウ化合物の使用量に関しては特
に制限はないが少なすぎてはウィスカの収率が低下し、
多すぎても原料の濃度を制限することになるから、原料
混合物中のケイ素に対してモル比で１以下の有効量を用
いることが好ましい。In addition, there is no particular restriction on the amount of sulfur compound used as a catalyst, but if it is too small, the yield of whiskers will decrease.
If the amount is too large, the concentration of the raw material will be limited, so it is preferable to use an effective amount of 1 or less in molar ratio to silicon in the raw material mixture.
本発明における熱分解反応は１１００〜１５００℃、好
ましくは１２００〜１４００℃で実施される。そのため
の装置としては、たとえば横型電気炉中にアルミナ等の
耐熱性の反応管を設けたものを用いることができるが、
必ずしもこのような装置に限定されるものではない。The thermal decomposition reaction in the present invention is carried out at 1100-1500°C, preferably 1200-1400°C. As an apparatus for this purpose, for example, a horizontal electric furnace equipped with a heat-resistant reaction tube made of alumina or the like can be used.
The present invention is not necessarily limited to such a device.
実１」１−
内径７０ｎ、長さ１０００ｍの反応管を装着した電気炉
に対し、触媒として３容量％の硫化水素を含有する水素
を２００ｃｃ／＋ｓｉｎの割合で供給し、また原料とし
てテトラメチルジシロキサンとベンゼンとをＳｔ／Ｃモ
ル比が０．３となるように混合し、これを５．０ ｃｃ
／ｈｒの割合で反応管の蒸発部（温度１５０℃）へ供給
した。こうしてキャリヤガスと混合された気化原料は反
応管内の１３００℃の部分で熱分解され、２時間の反応
の後、長さ３ｅｍ、平均径０．５μｍの白色の炭化ケイ
素ウイスカ０．２ｇが得られた。Example 1 1- Hydrogen containing 3% by volume of hydrogen sulfide was supplied as a catalyst at a rate of 200 cc/+sin to an electric furnace equipped with a reaction tube with an inner diameter of 70 n and a length of 1000 m, and tetramethyl dihydrogen was supplied as a raw material. Siloxane and benzene were mixed so that the St/C molar ratio was 0.3, and 5.0 cc of this was mixed.
/hr to the evaporation section (temperature: 150°C) of the reaction tube. The vaporized raw material thus mixed with the carrier gas is thermally decomposed at a temperature of 1300°C in the reaction tube, and after 2 hours of reaction, 0.2 g of white silicon carbide whiskers with a length of 3 em and an average diameter of 0.5 μm are obtained. Ta.
１発斑叉
実施例１と同じ装置を使用し、原料としてヘキサメチル
ジシラザンとベンゼンとをＳｉ／Ｃモル比が０．３とな
るように混合したものを用いたほかは実施例１と同様に
２時間反応させたところ、長さ３ ｃｍ、平均径０．５
μｍの白色炭化ケイ素ウィスカ０．１ｇが得られた。Same as Example 1 except that the same equipment as in Example 1 was used and a mixture of hexamethyldisilazane and benzene with a Si/C molar ratio of 0.3 was used as the raw material. When reacted for 2 hours, it became 3 cm in length and 0.5 in average diameter.
0.1 g of white silicon carbide whiskers of μm size were obtained.
光皿■四果
本発明の炭化ケイ素ウィスカの製造方法によれば、白色
すなわち高純度で、複合材料用の補強材として好適な長
さを有する炭化ケイ素ウィスカが効率よ（得られ、その
際のウィスカの成長速度が１分当り０．８ ｍｓに達す
るなど極めて早く、反応帯域でのウィスカの滞留時間が
短くても充分に成長したウィスカが製造できる利点があ
る。According to the method for producing silicon carbide whiskers of the present invention, silicon carbide whiskers that are white, that is, highly pure, and have a length suitable for use as a reinforcing material for composite materials can be efficiently obtained. The whisker growth rate is extremely fast, reaching 0.8 ms per minute, and there is an advantage that sufficiently grown whiskers can be produced even if the residence time of the whiskers in the reaction zone is short.
Claims (2)
水素化合物との混合物を、イオウ化合物を含有する還元
性または不活性のキャリヤガスの存在下に高温で気相熱
分解するに当り、系中のケイ素と炭素のモル比を０．１
〜２とすることを特徴とする炭化ケイ素ウィスカの製造
方法。(1) When performing gas phase pyrolysis of an organosilicon compound or a mixture of an organosilicon compound and a hydrocarbon compound at high temperature in the presence of a reducing or inert carrier gas containing a sulfur compound, silicon in the system and carbon molar ratio is 0.1
2. A method for producing silicon carbide whiskers, characterized in that: -2.
請求の範囲第１項記載の炭化ケイ素ウィスカの製造方法
。(2) The method for producing silicon carbide whiskers according to claim 1, wherein the thermal decomposition temperature is 1100 to 1500°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25743687A JPH01100098A (en) | 1987-10-14 | 1987-10-14 | Production of silicon carbide whisker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25743687A JPH01100098A (en) | 1987-10-14 | 1987-10-14 | Production of silicon carbide whisker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01100098A true JPH01100098A (en) | 1989-04-18 |
| JPH03360B2 JPH03360B2 (en) | 1991-01-07 |
Family
ID=17306331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25743687A Granted JPH01100098A (en) | 1987-10-14 | 1987-10-14 | Production of silicon carbide whisker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01100098A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101531426B1 (en) * | 2007-03-01 | 2015-06-24 | 가부시키가이샤 니콘 | Pellicle frame apparatus, mask, exposure method, exposure apparatus, and device manufacturing method |
-
1987
- 1987-10-14 JP JP25743687A patent/JPH01100098A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101531426B1 (en) * | 2007-03-01 | 2015-06-24 | 가부시키가이샤 니콘 | Pellicle frame apparatus, mask, exposure method, exposure apparatus, and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03360B2 (en) | 1991-01-07 |
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| EXPY | Cancellation because of completion of term |