JP7507921B2 - 焼結準備済み銀フィルム - Google Patents
焼結準備済み銀フィルム Download PDFInfo
- Publication number
- JP7507921B2 JP7507921B2 JP2023061354A JP2023061354A JP7507921B2 JP 7507921 B2 JP7507921 B2 JP 7507921B2 JP 2023061354 A JP2023061354 A JP 2023061354A JP 2023061354 A JP2023061354 A JP 2023061354A JP 7507921 B2 JP7507921 B2 JP 7507921B2
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- Prior art keywords
- carrier
- silver film
- ready
- sinter
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052709 silver Inorganic materials 0.000 title claims description 120
- 239000004332 silver Substances 0.000 title claims description 120
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 115
- 238000000034 method Methods 0.000 claims description 55
- 239000002985 plastic film Substances 0.000 claims description 13
- 229920006255 plastic film Polymers 0.000 claims description 13
- 238000005266 casting Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 35
- 238000003475 lamination Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 12
- 229920002799 BoPET Polymers 0.000 description 11
- 238000005245 sintering Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
- B22D21/06—Casting non-ferrous metals with a high melting point, e.g. metallic carbides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/22—Moulds for peculiarly-shaped castings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D25/00—Special casting characterised by the nature of the product
- B22D25/02—Special casting characterised by the nature of the product by its peculiarity of shape; of works of art
- B22D25/04—Casting metal electric battery plates or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Laminated Bodies (AREA)
- Powder Metallurgy (AREA)
- Wire Bonding (AREA)
Description
a)設計された開口部を含むキャリアを作成する工程と、
b)設計された開口部内に銀フィルム層を鋳造する工程と、
c)キャリア及び銀フィルム層を乾燥させて、組み合わされた焼結準備済み銀フィルム及びキャリアを形成する工程と、を含む、方法を提供する。
d)組み合わされた焼結準備済み銀フィルム及びキャリア、工業用途のために準備した個々のシートに圧延又は切断する工程を更に含み得る。
a)設計された開口部を含むキャリアと、設計された開口部内に鋳造された銀フィルム層とを含むタイプの、組み合わされた焼結準備済み銀フィルム及びキャリアを、銀フィルム層が下向きになるように、基板の上に位置決めする工程と、
b)積層によって銀フィルム層を基板上に転写する工程と、
c)組み合わされた焼結準備済み銀フィルム及びキャリアからキャリアを除去する工程と、
d)転写された銀フィルム層と接触する基板上に構成要素を配置して、アセンブリを形成する工程と、
e)アセンブリを焼結して、構成要素と基板との間に銀接合を作成する工程と、を含む、方法を提供する。
パターン化された組み合わされた焼結準備済み銀フィルム及びキャリア1は、設計された開口部5を有するプラスチックキャリア2と、開口部5内に鋳造された焼結準備済み銀フィルム層7とから構成され得る。焼結準備済み銀フィルム7のパターンのレイアウトは、有利には、組み立てられる電子デバイスの設計によって画定される。パターン化された焼結準備済み銀フィルム7は、2工程プロセスで生産に使用される。第1の工程では、焼結準備済み銀フィルム7を、3~6Mpaの典型的な圧力及び130~150℃の温度で積層することによって、キャリア2から基板10上に転写する。使用される典型的な基板は、Si又はSiCデバイスを有するセラミックDBC、リードフレーム、クリップ、及びウェハである。第2の工程では、構成要素を基板10上に配置し、アセンブリを10MPaの典型的な圧力及び250℃の温度で焼結して、信頼性の高い銀接合を作成する。有利には、このプロセスは、電力モジュール、別個の構成要素、及び様々な他のデバイスの大量製造に十分適している。
組成:焼結銀粒子
密度:85~95%
熱伝導率:約200WmK
導電率:約3μΩcm
ヤング率:約20GPa
項目1. 組み合わされた焼結準備済み銀フィルム及びキャリアを作製する方法であって、
a)設計された開口部を含むキャリアを作成する工程と、
b)設計された開口部内に銀フィルム層を鋳造する工程と、
c)キャリア及び銀フィルム層を乾燥させて、組み合わされた焼結準備済み銀フィルム及びキャリアを形成する工程と、を含む、方法。
項目2.
d)組み合わされた焼結準備済み銀フィルム及びキャリアを、工業用途のために準備した個々のシートに圧延又は切断する工程を更に含む、項目1に記載の方法。
項目3. キャリアが、プラスチックキャリアを含む、項目1又は項目2に記載の方法。
項目4. キャリアが、2つのプラスチックフィルムを恒久的に結合することによって作成される、項目1~3のいずれか一項に記載の方法。
項目5. 2つのプラスチックフィルムが、プラズマ結合プロセスを使用して結合される、項目4に記載の方法。
項目6. 2つのプラスチックフィルムが、温度安定性接着剤を使用して結合される、項目4に記載の方法。
項目7. キャリアが、ステンシル層及びバッキング層を含む、項目1~6のいずれか一項に記載の方法。
項目8. ステンシル層が、設計された開口部を画定する、項目7に記載の方法。
項目9. ステンシル層が、100~200ミクロン、任意選択的に150ミクロンの厚さを有する、項目7又は項目8に記載の方法。
項目10. ステンシル層が、PETフィルムを含む、項目7~9のいずれか一項に記載の方法。
項目11. ステンシル層が、設計された開口部を生産するためにダイカットされる、項目7~10のいずれか一項に記載の方法。
項目12. 設計された開口部が、長方形又は正方形である、項目7~11のいずれか一項に記載の方法。
項目13. バッキング層が、設計された開口部の底部を封止するように構成されている、項目7~12のいずれか一項に記載の方法。
項目14. バッキング層が、50ミクロンの厚さを有する、項目7~13のいずれか一項に記載の方法。
項目15. バッキング層が、PETフィルムを含む、項目7~14のいずれか一項に記載の方法。
項目16. バッキング層が、酸素プラズマで前処理される、項目7~15のいずれか一項に記載の方法。
項目17. ステンシル層及びバッキング層が、ラミネータープレスを使用して、任意選択的に5MPaの圧力下及び150℃の温度で結合される、項目7~16のいずれか一項に記載の方法。
項目18. 工程b)の開始時に、設計された開口部の上部が、鋳造された銀フィルム層を受容するために開放されている、項目7~17のいずれか一項に記載の方法。
項目19. 銀フィルム層を鋳造することが、銀ペーストを鋳造することを含む、項目1~18のいずれか一項に記載の方法。
項目20. 銀フィルム層が、溶媒を含む、項目1~19のいずれか一項に記載の方法。
項目21. キャリア及び銀フィルム層を乾燥させて、組み合わされた焼結準備済み銀フィルム及びキャリアを形成することが、任意選択的に130℃で20分間オーブン内で行われる、項目1~20のいずれか一項に記載の方法。
項目22. 設計された開口部を含むキャリアと、設計された開口部内に鋳造された銀フィルム層と、を含む、組み合わされた焼結準備済み銀フィルム及びキャリア。
項目23. キャリアが、プラスチックキャリアを含む、項目22に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目24. キャリアが、2つの恒久的に結合されたプラスチックフィルムを含む、項目22又は項目23に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目25. キャリアが、ステンシル層及びバッキング層を含む、項目22~24のいずれか一項に記載の>組み合わされた焼結準備済み銀フィルム及びキャリア。
項目26. ステンシル層が、設計された開口部を画定する、項目25に記載の組み合わせられた焼結準備済み銀フィルム及びキャリア。
項目27. ステンシル層が、100~200ミクロン、任意選択的に150ミクロンの厚さを有する、項目25又は項目26に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目28. ステンシル層が、PETフィルムを含む、項目25~27のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目29. 設計された開口部が、長方形又は正方形である、項目25~28のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目30. バッキング層が、設計された開口部の底部を封止する、項目25~29のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目31. バッキング層が、50ミクロンの厚さを有する、項目25~30のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目32. バッキング層が、PETフィルムを含む、項目25~31のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目33. 銀フィルム層が、鋳造用銀ペーストから形成される、項目22~32のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目34. 銀フィルム層が、鋳造時に溶媒を含む、項目22~33のいずれか一項に記載の組み合わされた焼結準備済み銀フィルム及びキャリア。
項目35. 構成要素を基板に組み立てる方法であって、
a)設計された開口部を含むキャリアと、設計された開口部内に鋳造された銀フィルム層とを含むタイプの、組み合わされた焼結準備済み銀フィルム及びキャリアを、銀フィルム層が下向きになるように、基板の上に位置決めする工程と、
b)積層によって銀フィルム層を基板上に転写する工程と、
c)組み合わされた焼結準備済み銀フィルム及びキャリアからキャリアを除去する工程と、
d)転写された銀フィルム層と接触する基板上に構成要素を配置して、アセンブリを形成する工程と、
e)アセンブリを焼結して、構成要素と基板との間に銀接合を作成する工程と、を含む、方法。
項目36. 工程b)において、積層が、3~8MPa、任意選択的に3~6MPa、任意選択的に8MPaの圧力下、及び130℃~150℃、任意選択的に130℃の温度で、積層プレスを使用する、項目35に記載の方法。
項目37. 工程e)において、焼結が、10MPaの圧力及び250℃の温度である、項目35又は項目36に記載の方法。
項目38. 基板が、直接結合銅(DBC)、リードフレーム、クリップ若しくはクリップアレイ、ウェハ、又は電子デバイスのアセンブリに使用され、かつ金属化表面を有する任意の他の部品を含む、項目35~37のいずれか一項に記載の方法。
項目39. 構成要素が、Si若しくはSiCデバイス及び/又はダイを含む、項目35~38のいずれか一項に記載の方法。
項目40. 組み合わされた焼結準備済み銀フィルム及びキャリアが、項目22~34のいずれか一項に定義されるとおりである、項目35~39のいずれか一項に記載の方法。
項目41. 焼結された銀接合によって一緒に接合された構成要素及び基板のアセンブリであって、項目35~40のいずれか一項に記載の方法によって得ることができる、アセンブリ。
Claims (4)
- 組み合わされた焼結準備済み銀フィルム及びキャリアを作製する方法であって、
a)設計された開口部を含むキャリアを作成する工程と、
b)前記設計された開口部内に銀フィルム層を鋳造する工程と、
c)前記キャリア及び銀フィルム層を乾燥させて、前記組み合わされた焼結準備済み銀フィルム及びキャリアを形成する工程と、を含み、
前記キャリアが、2つのプラスチックフィルムを恒久的に結合することによって作成される、方法。 - 前記キャリアが、ステンシル層及びバッキング層を含む、請求項1に記載の方法。
- 前記ステンシル層が、前記設計された開口部を画定し、かつ/又は
前記バッキング層が、前記設計された開口部の底部を封止するように構成され、かつ/又は
工程b)の開始時に、前記設計された開口部の上部が、前記鋳造された銀フィルム層を受容するために開放されている、請求項2に記載の方法。 - 前記銀フィルム層を鋳造することが、銀ペーストを鋳造することを含む、請求項1~3のいずれか一項に記載の方法。
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