JP7506691B2 - 量子収量が改善されたフォトカソード - Google Patents
量子収量が改善されたフォトカソード Download PDFInfo
- Publication number
- JP7506691B2 JP7506691B2 JP2021569499A JP2021569499A JP7506691B2 JP 7506691 B2 JP7506691 B2 JP 7506691B2 JP 2021569499 A JP2021569499 A JP 2021569499A JP 2021569499 A JP2021569499 A JP 2021569499A JP 7506691 B2 JP7506691 B2 JP 7506691B2
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- JP
- Japan
- Prior art keywords
- electromagnetic radiation
- radiation detector
- photocathode
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006862 quantum yield reaction Methods 0.000 title description 9
- 239000004065 semiconductor Substances 0.000 claims description 40
- 230000005670 electromagnetic radiation Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 238000005452 bending Methods 0.000 claims description 10
- 230000004907 flux Effects 0.000 claims description 9
- 238000011144 upstream manufacturing Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000370 acceptor Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000006798 recombination Effects 0.000 description 13
- 238000005215 recombination Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- -1 SbK2Cs Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
- G01R29/0885—Sensors; antennas; probes; detectors using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
- H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50005—Imaging and conversion tubes characterised by form of illumination
- H01J2231/5001—Photons
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
より高いか、またはそれと等しく選択され、それにおいて、εsおよびεdは、それぞれ、前記半導体層および前記絶縁層の比誘電率であり、δは、前記絶縁層の厚さであり、ΔUbbは、電位差の印加がないときのバンド・ベンディングの振幅であり、Naは、前記半導体層内のアクセプタの濃度であり、eは、前記電子の電荷である。
これにおいて、eは電子の電荷であり、Naは(p型)フォトカソード内のアクセプタの濃度であり、xdtは、欠乏エリアの幅である。
これにおいて、指数FFは、界面においてバンドが平坦である状況に対応し、δは、絶縁層の厚さであり、εdは、その比誘電率である。バンド・ベンディングを少なくとも反転することが望ましい場合には、次式を用いて電位差(Vm-Vpk)≦-ΔVthを適用する必要がある。
110 入口窓、透過窓
111 前面
112 背面
120 フォトカソード、フォト放射層
121 上流面
122 下流面
130 電子増倍デバイス
140 出力デバイス
310 入口窓
311 上流面
312 下流面
315 第1の電極
316 導電層
317 絶縁層
320 フォトカソード
321 再結合エリア
322 放射表面
325 第2の電極
330 電子増倍デバイス
340 出力デバイス
424 ポテンシャル・カップ
425 再結合エリア
Claims (9)
- 電磁放射線検出器であって、入射光子束を受け取るように構成された上流面(311)をはじめ、前記上流面の反対側の下流面(312)を有するガラス入口窓(310)と、前記入射光子から光電子を生成し、そのように生成された前記光電子を放射するように構成された半導体層(320)の形式のフォトカソードと、前記フォトカソードによって放射された前記光電子を受け取り、受け取った各光電子について複数の二次電子を生成するべく構成された電子増倍デバイス(330)と、前記二次電子から出力信号を生成するべく構成された出力デバイス(340)と、を包含し、それにおいて、前記入口窓の前記下流面(312)を覆って透過性の導電層(316)が堆積され、前記導電層(316)と前記半導体層(320)の間に絶縁層(317)が配置され、前記導電層が第1の電極(315)と電気的に接続され、前記半導体層が第2の電極(325)と電気的に接続され、前記第1の電極が、前記第2の電極において印加される電位より低い電位に設定されるように構成されていること、を特徴とする電磁放射線検出器。
- 前記半導体層は、多結晶半導体材料から作られることを特徴とする、請求項1に記載の電磁放射線検出器。
- 前記多結晶半導体材料は、SbK2Cs、SbRb2Cs、SbRb2Cs、SbCs3、SbNa3、SbNaKRbCs、SbNaKCs、SbNa2KCsから選択されることを特徴とする、請求項2に記載の電磁放射線検出器。
- 前記半導体層は、III-IVまたはII-VI単結晶半導体材料から作られることを特徴とする、請求項1に記載の電磁放射線検出器。
- 前記透過性の導電層は、ITOまたはZnOから作られることを特徴とする、請求項1から請求項4のいずれか一項に記載の電磁放射線検出器。
- 前記絶縁層は、1V/10nmより高い降伏電圧を有する誘電体材料から作られることを特徴とする、請求項1から請求項5のいずれか一項に記載の電磁放射線検出器。
- 前記絶縁層は、100から200nmの厚さを有することを特徴とする、請求項6に記載の電磁放射線検出器。
- 前記誘電体材料は、Al2O3、SiO2、HfO3から選択されることを特徴とする、請求項6または請求項7に記載の電磁放射線検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1905412A FR3096506B1 (fr) | 2019-05-23 | 2019-05-23 | Photocathode à rendement quantique amélioré |
FR1905412 | 2019-05-23 | ||
PCT/FR2020/000176 WO2020234518A1 (fr) | 2019-05-23 | 2020-05-22 | Photocathode a rendement quantique ameliore |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022534059A JP2022534059A (ja) | 2022-07-27 |
JP7506691B2 true JP7506691B2 (ja) | 2024-06-26 |
Family
ID=68072656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021569499A Active JP7506691B2 (ja) | 2019-05-23 | 2020-05-22 | 量子収量が改善されたフォトカソード |
Country Status (12)
Country | Link |
---|---|
US (1) | US11676790B2 (ja) |
EP (1) | EP3966843A1 (ja) |
JP (1) | JP7506691B2 (ja) |
KR (1) | KR20220011177A (ja) |
CN (1) | CN113994220B (ja) |
AU (1) | AU2020278915A1 (ja) |
BR (1) | BR112021023405A2 (ja) |
CA (1) | CA3139044A1 (ja) |
FR (1) | FR3096506B1 (ja) |
IL (1) | IL288262A (ja) |
SG (1) | SG11202112989YA (ja) |
WO (1) | WO2020234518A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123176A (ja) | 2005-10-31 | 2007-05-17 | Hamamatsu Photonics Kk | 光電陰極 |
US20140239157A1 (en) | 2011-09-29 | 2014-08-28 | The Secretary Of State For Defence | Bright source protection for low light imaging sensors |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1119829C (zh) * | 1996-09-17 | 2003-08-27 | 浜松光子学株式会社 | 光电阴极及装备有它的电子管 |
CN1123905C (zh) * | 1998-10-22 | 2003-10-08 | 先锋电子株式会社 | 电子发射装置和使用该装置的显示装置 |
WO2002061458A1 (fr) * | 2001-01-31 | 2002-08-08 | Hamamatsu Photonics K. K. | Detecteur de faisceau electronique, microscope electronique de type a balayage, spectrometre de masse et detecteur d'ions |
EP1262797B1 (en) * | 2001-05-11 | 2011-07-13 | FUJIFILM Corporation | Method and apparatus for image recording and image recording medium |
JP4410027B2 (ja) * | 2004-05-24 | 2010-02-03 | 浜松ホトニクス株式会社 | 光電陰極及び電子管 |
JP4647955B2 (ja) * | 2004-08-17 | 2011-03-09 | 浜松ホトニクス株式会社 | 光電陰極板及び電子管 |
JP2006302610A (ja) * | 2005-04-19 | 2006-11-02 | Hamamatsu Photonics Kk | 半導体光電陰極 |
US20080070340A1 (en) * | 2006-09-14 | 2008-03-20 | Nicholas Francis Borrelli | Image sensor using thin-film SOI |
FR2925218B1 (fr) | 2007-12-13 | 2010-03-12 | Photonis France | Tube intensificateur d'image a encombrement reduit et systeme de vision nocturne equipe d'un tel tube |
CN101478645B (zh) * | 2008-12-20 | 2010-12-15 | 中国科学院西安光学精密机械研究所 | 一种基于半导体层的电荷感应成像方法 |
NL1037989C2 (en) * | 2010-05-28 | 2011-11-29 | Photonis France Sas | An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure. |
FR2961628B1 (fr) | 2010-06-18 | 2012-08-31 | Photonis France | Détecteur a multiplicateur d'électrons forme d'une couche de nanodiamant hautement dope. |
US9601299B2 (en) * | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
CN103399338B (zh) * | 2013-07-05 | 2015-11-18 | 中国科学院西安光学精密机械研究所 | 一种复合式光电阴极x射线探测装置 |
CN103887125B (zh) * | 2014-02-28 | 2016-03-30 | 中国计量学院 | 一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极 |
JP6193171B2 (ja) * | 2014-04-11 | 2017-09-06 | 株式会社東芝 | 光検出器 |
US9460886B2 (en) * | 2014-07-22 | 2016-10-04 | Kla-Tencor Corporation | High resolution high quantum efficiency electron bombarded CCD or CMOS imaging sensor |
-
2019
- 2019-05-23 FR FR1905412A patent/FR3096506B1/fr active Active
-
2020
- 2020-05-22 WO PCT/FR2020/000176 patent/WO2020234518A1/fr unknown
- 2020-05-22 AU AU2020278915A patent/AU2020278915A1/en not_active Abandoned
- 2020-05-22 BR BR112021023405A patent/BR112021023405A2/pt unknown
- 2020-05-22 SG SG11202112989YA patent/SG11202112989YA/en unknown
- 2020-05-22 KR KR1020217042022A patent/KR20220011177A/ko unknown
- 2020-05-22 CN CN202080044526.3A patent/CN113994220B/zh active Active
- 2020-05-22 US US17/595,661 patent/US11676790B2/en active Active
- 2020-05-22 CA CA3139044A patent/CA3139044A1/fr active Pending
- 2020-05-22 JP JP2021569499A patent/JP7506691B2/ja active Active
- 2020-05-22 EP EP20737227.7A patent/EP3966843A1/fr active Pending
-
2021
- 2021-11-21 IL IL288262A patent/IL288262A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123176A (ja) | 2005-10-31 | 2007-05-17 | Hamamatsu Photonics Kk | 光電陰極 |
US20140239157A1 (en) | 2011-09-29 | 2014-08-28 | The Secretary Of State For Defence | Bright source protection for low light imaging sensors |
Also Published As
Publication number | Publication date |
---|---|
EP3966843A1 (fr) | 2022-03-16 |
WO2020234518A1 (fr) | 2020-11-26 |
CA3139044A1 (fr) | 2020-11-26 |
US11676790B2 (en) | 2023-06-13 |
AU2020278915A1 (en) | 2021-12-23 |
CN113994220B (zh) | 2024-06-25 |
US20220223364A1 (en) | 2022-07-14 |
FR3096506B1 (fr) | 2021-06-11 |
JP2022534059A (ja) | 2022-07-27 |
FR3096506A1 (fr) | 2020-11-27 |
CN113994220A (zh) | 2022-01-28 |
IL288262A (en) | 2022-01-01 |
BR112021023405A2 (pt) | 2022-01-04 |
KR20220011177A (ko) | 2022-01-27 |
SG11202112989YA (en) | 2021-12-30 |
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