JP7489181B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7489181B2 JP7489181B2 JP2019203742A JP2019203742A JP7489181B2 JP 7489181 B2 JP7489181 B2 JP 7489181B2 JP 2019203742 A JP2019203742 A JP 2019203742A JP 2019203742 A JP2019203742 A JP 2019203742A JP 7489181 B2 JP7489181 B2 JP 7489181B2
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- semiconductor element
- electrode
- bonding material
- conductive bonding
- lower electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 387
- 239000000463 material Substances 0.000 claims description 111
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000035882 stress Effects 0.000 description 39
- 238000010586 diagram Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 16
- 238000005452 bending Methods 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 230000008646 thermal stress Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910016525 CuMo Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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Description
先ず、図1を用いて、本実施例に係る半導体装置の構造と機能について説明する。図1は、本実施例の車載用交流発電機(オルタネータ)用半導体装置(整流素子)200の縦構造の断面を模式的に示す図である。
次に、半導体装置200に備えられた電子回路体100の詳細な構成を説明する。なお、図1において、電子回路体100を破線で示しているのは、電子回路体100が占める領域を表記するためである。
以上のように、電子回路体100は、第1の樹脂1hで封止されて、一体的に構成されており、下部電極1gおよび上部電極1dの各一面は、それぞれ電子回路体100の表面に露出する構造となる。この露出した下部電極1gの一面は、ベース2の台座2aに、上部電極1dの一面は、リード3のリードヘッダ3aに、それぞれ第2の導電性接合材4によって電気的に接続され、半導体装置200を構成する。
1b…コンデンサ
1c…制御回路チップ
1d…上部電極(第2の内部電極)
1e…(第1の)導電性接合材(電子回路体の接合材)
1f…ワイヤ
1g…下部電極(第1の内部電極)
1h…モールド樹脂(第1の樹脂,電子回路体の樹脂)
1i…リードフレーム(支持体)
2…ベース(第1の外部電極,第1の外部端子)
2a…台座(第1の電極面部)
3…リード(第2の外部電極,第2の外部端子)
3a…リードヘッダ(第2の電極面部)
4…第2の導電性接合材(半導体装置の接合材)
5…モールド樹脂(第2の樹脂,半導体装置の樹脂)
7a…(第1の)半導体素子1aの角部近傍
7b…(第2の)半導体素子1aの角部近傍
7c…(第3の)半導体素子1aの角部近傍
7d…(第4の)半導体素子1aの角部近傍
8a…(第1の)下部電極1gの端部
8b…(第2の)下部電極1gの端部
9a…(第1の)半導体素子1aの端部
9b…(第2の)半導体素子1aの端部
10a…半導体素子(ダイオード)
10e…導電性接合材(半導体装置の接合材)
20…ベース(第1の外部電極,第1の外部端子)
20a…台座(第1の電極面部)
30…リード(第2の外部電極,第2の外部端子)
30a…リードヘッダ(第2の電極面部)
50…モールド樹脂(半導体装置の樹脂)
100…電子回路体
200…半導体装置(整流素子)
300…半導体装置(整流素子)
L…外周部絶縁層(SiO2)
p1…応力集中箇所(上)
p2…応力集中箇所(下)
J…上部電極1dにおける半導体素子1aと接続する面の端部から下部電極1gにおける半導体素子1aと接続する面の端部までの距離
W…上部電極1dにおける半導体素子1aと接続する面の端部から半導体素子1a端部までの距離
X…JをWで割り無次元化した値
Tb…曲げ応力方向
Tj…はんだ熱応力方向
D2…半導体素子1aの第一の主面における下部電極1gとの接続端部から半導体素子1aの端部までの領域
S…ソース電極(第2の主端子)
D…ドレイン電極(第1の主端子)
C…ゲート電極(制御電極)
Claims (11)
- 片面にのみゲート電極を有する半導体素子と、
前記半導体素子の前記ゲート電極を有する面に接続される上部電極と、
前記半導体素子の前記ゲート電極を有する面とは反対側の面に接続される下部電極と、を備える半導体装置において、
前記上部電極における前記半導体素子の前記ゲート電極を有する面との接続端部は、前記半導体素子の前記ゲート電極を有する面の端部より内側にあり、かつ、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より内側にあり、
前記半導体素子の少なくとも1つの角部において、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より内側にあり、
前記半導体素子の角部以外において、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より外側にあり、
前記半導体素子と前記上部電極と前記下部電極とが樹脂により封止されるとともに、前記上部電極の前記半導体素子と接続される面とは反対側の面および前記下部電極の前記半導体素子と接続される面とは反対側の面が前記樹脂より露出しており、
前記上部電極の厚みは、前記下部電極の厚みよりも厚いことを特徴とする半導体装置。 - 片面にのみゲート電極を有する半導体素子と、
前記半導体素子の前記ゲート電極を有する面に接続される上部電極と、
前記半導体素子の前記ゲート電極を有する面とは反対側の面に接続される下部電極と、を備える半導体装置において、
前記上部電極における前記半導体素子の前記ゲート電極を有する面との接続端部は、前記半導体素子の前記ゲート電極を有する面の端部より内側にあり、かつ、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より内側にあり、
前記上部電極は、第1の導電性接合材を介して前記半導体素子に接続され、
前記下部電極は、第2の導電性接合材を介して前記半導体素子に接続され、
前記第1の導電性接合材と前記上部電極との接続部の端部、および前記第2の導電性接合材と前記下部電極との接続部の端部、前記第1の導電性接合材と前記半導体素子との接続部の端部、前記第2の導電性接合材と前記半導体素子との接続部の端部は、前記半導体素子の端部より内側にあり、
前記半導体素子と前記上部電極と前記下部電極とが樹脂により封止されるとともに、前記上部電極の前記半導体素子と接続される面とは反対側の面および前記下部電極の前記半導体素子と接続される面とは反対側の面が前記樹脂より露出しており、
前記上部電極の厚みは、前記下部電極の厚みよりも厚いことを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記第1の導電性接合材と前記上部電極との接続部の端部、および前記第2の導電性接合材と前記下部電極との接続部の端部は、鉛直方向において略揃っていることを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
前記第1の導電性接合材と前記上部電極との接続部の端部、および前記第2の導電性接合材と前記下部電極との接続部の端部、前記第1の導電性接合材と前記半導体素子との接続部の端部、前記第2の導電性接合材と前記半導体素子との接続部の端部は、鉛直方向において略揃っていることを特徴とする半導体装置。 - 請求項2から4のいずれか1項に記載の半導体装置において、
前記第1の導電性接合材および前記第2の導電性接合材は、鉛フリーはんだまたは焼結材または導電性接着材のいずれかであることを特徴とする半導体装置。 - 片面にのみチップ外周部に外周部絶縁層を有する半導体素子と、
前記半導体素子の前記外周部絶縁層を有する面に接続される上部電極と、
前記半導体素子の前記外周部絶縁層を有する面とは反対側の面に接続される下部電極と、を備える半導体装置において、
前記半導体素子は、ダイオードであり、
前記上部電極における前記半導体素子の前記外周部絶縁層を有する面との接続端部は、前記半導体素子の前記外周部絶縁層を有する面の端部より内側にあり、かつ、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より内側にあり、
前記半導体素子の角部以外において、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より外側にあることを特徴とする半導体装置。 - 請求項6に記載の半導体装置において、
前記半導体素子の少なくとも1つの角部において、前記下部電極における前記半導体素子の前記反対側の面との接続端部は、前記半導体素子の前記反対側の面の端部より内側にあることを特徴とする半導体装置。 - 請求項6に記載の半導体装置において、
前記上部電極は、第1の導電性接合材を介して前記半導体素子に接続され、
前記下部電極は、第2の導電性接合材を介して前記半導体素子に接続され、
前記第1の導電性接合材と前記上部電極との接続部の端部、および前記第2の導電性接合材と前記下部電極との接続部の端部、前記第1の導電性接合材と前記半導体素子との接続部の端部、前記第2の導電性接合材と前記半導体素子との接続部の端部は、前記半導体素子の端部より内側にあることを特徴とする半導体装置。 - 請求項8に記載の半導体装置において、
前記第1の導電性接合材と前記上部電極との接続部の端部、および前記第2の導電性接合材と前記下部電極との接続部の端部は、鉛直方向において略揃っていることを特徴とする半導体装置。 - 請求項9に記載の半導体装置において、
前記第1の導電性接合材と前記上部電極との接続部の端部、前記第2の導電性接合材と前記下部電極との接続部の端部、前記第1の導電性接合材と前記半導体素子との接続部の端部、前記第2の導電性接合材と前記半導体素子との接続部の端部は、鉛直方向において略揃っていることを特徴とする半導体装置。 - 請求項8から10のいずれか1項に記載の半導体装置において、
前記第1の導電性接合材および前記第2の導電性接合材は、鉛フリーはんだまたは焼結材または導電性接着材のいずれかであることを特徴とする半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019203742A JP7489181B2 (ja) | 2019-11-11 | 2019-11-11 | 半導体装置 |
EP20199996.8A EP3823019A3 (en) | 2019-11-11 | 2020-10-05 | Vertical power semiconductor device |
US17/078,931 US11652023B2 (en) | 2019-11-11 | 2020-10-23 | Semiconductor device including a semiconductor element with a gate electrode on only one surface |
KR1020200145742A KR102469064B1 (ko) | 2019-11-11 | 2020-11-04 | 반도체 장치 |
CN202011255776.XA CN112786550B (zh) | 2019-11-11 | 2020-11-11 | 半导体装置 |
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