JP7482296B2 - レーザ加工方法及び半導体デバイス製造方法 - Google Patents
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- H—ELECTRICITY
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- G—PHYSICS
- G02—OPTICS
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Analytical Chemistry (AREA)
Description
[レーザ加工装置の構成]
[対象物の構成]
[レーザ照射ユニットの構成]
[検査用撮像ユニットの構成]
[アライメント補正用撮像ユニットの構成]
[検査用撮像ユニットによる撮像原理]
[検査用撮像ユニットによる検査原理]
[レーザ加工方法及び半導体デバイス製造方法]
[作用及び効果]
[変形例]
Claims (4)
- 表面及び裏面を有する半導体基板と、前記表面に形成された機能素子層と、を備えるウェハを用意し、複数のラインのそれぞれに沿って前記裏面側から前記ウェハにレーザ光を照射することにより、前記複数のラインのそれぞれに沿って前記半導体基板の内部に複数列の改質領域を形成する第1工程と、
前記複数列の改質領域のうち前記表面に最も近い第1改質領域と前記第1改質領域に最も近い第2改質領域との間の検査領域に、前記第1改質領域から前記裏面側に延びる亀裂の先端が存在するか否かを検査する第2工程と、
前記第2工程における検査結果に基づいて、前記第1工程における加工結果を評価する第3工程と、を備え、
前記第1工程においては、前記複数列の改質領域に渡る亀裂が前記表面に至る条件で、前記複数のラインのそれぞれに沿って前記裏面側から前記ウェハに前記レーザ光を照射し、
前記第2工程においては、前記検査領域内に前記裏面側から焦点を合わせて、前記表面側から前記裏面側に前記半導体基板を伝搬する光を検出することにより、前記検査領域に前記先端が存在するか否かを検査し、
前記第3工程においては、前記検査領域に前記先端が存在しない場合に、前記複数列の改質領域に渡る前記亀裂が前記表面に至っていると評価し、前記検査領域に前記先端が存在する場合に、前記複数列の改質領域に渡る前記亀裂が前記表面に至っていないと評価し、前記ウェハへのレーザ加工を実施する、レーザ加工方法。 - 表面及び裏面を有する半導体基板と、前記表面に形成された機能素子層と、を備えるウェハを用意し、複数のラインのそれぞれに沿って前記裏面側から前記ウェハにレーザ光を照射することにより、前記複数のラインのそれぞれに沿って前記半導体基板の内部に複数列の改質領域を形成する第1工程と、
前記複数列の改質領域のうち前記表面に最も近い第1改質領域と前記第1改質領域に最も近い第2改質領域との間の検査領域に、前記第2改質領域から前記表面側に延びる亀裂の先端が存在するか否かを検査する第2工程と、
前記第2工程における検査結果に基づいて、前記第1工程における加工結果を評価する第3工程と、を備え、
前記第1工程においては、前記複数列の改質領域に渡る亀裂が前記表面に至る条件で、前記複数のラインのそれぞれに沿って前記裏面側から前記ウェハに前記レーザ光を照射し、
前記第2工程においては、前記表面に対して前記裏面とは反対側の領域に前記裏面側から焦点を合わせて、前記表面に関して前記焦点と対称な仮想焦点を前記検査領域内に位置させ、前記裏面側から前記表面を介して前記裏面側に前記半導体基板を伝搬する光を検出することにより、前記検査領域に前記先端が存在するか否かを検査し、
前記第3工程においては、前記検査領域に前記先端が存在しない場合に、前記複数列の改質領域に渡る前記亀裂が前記表面に至っていると評価し、前記検査領域に前記先端が存在する場合に、前記複数列の改質領域に渡る前記亀裂が前記表面に至っていないと評価し、前記ウェハへのレーザ加工を実施する、レーザ加工方法。 - 前記複数列の改質領域は、2列の改質領域である、請求項1又は2に記載のレーザ加工方法。
- 請求項1~3のいずれか一項に記載のレーザ加工方法が備える前記第1工程、前記第2工程及び前記第3工程と、
前記第3工程において、前記複数列の改質領域に渡る前記亀裂が前記表面に至っていると評価された場合に、前記裏面を研削することにより、前記複数列の改質領域に渡る前記亀裂を前記裏面に露出させ、前記複数のラインのそれぞれに沿って前記ウェハを複数の半導体デバイスに切断する第4工程と、を備える、半導体デバイス製造方法。
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JP2013258253A (ja) | 2012-06-12 | 2013-12-26 | Disco Abrasive Syst Ltd | ウエーハの加工方法およびレーザー加工装置 |
JP2017133997A (ja) | 2016-01-29 | 2017-08-03 | 株式会社東京精密 | 亀裂検出装置及び亀裂検出方法 |
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JP2006147818A (ja) * | 2004-11-19 | 2006-06-08 | Canon Inc | 基板割断方法 |
JP2007132761A (ja) * | 2005-11-09 | 2007-05-31 | Showa Seiki Kk | 共焦点型信号光検出装置および信号光検出方法 |
JP5707889B2 (ja) * | 2010-11-16 | 2015-04-30 | 株式会社東京精密 | 半導体基板の切断方法及び半導体基板の切断装置 |
JP5158552B1 (ja) * | 2012-01-19 | 2013-03-06 | レーザーテック株式会社 | 顕微鏡及び検査装置 |
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JP6531345B2 (ja) * | 2015-09-29 | 2019-06-19 | 株式会社東京精密 | レーザー加工装置及びレーザー加工方法 |
CN108603851B (zh) * | 2016-03-16 | 2021-01-01 | 株式会社日立高新技术 | 缺陷检查装置 |
JP6815692B2 (ja) * | 2016-12-09 | 2021-01-20 | 株式会社ディスコ | ウェーハの加工方法 |
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JP2013258253A (ja) | 2012-06-12 | 2013-12-26 | Disco Abrasive Syst Ltd | ウエーハの加工方法およびレーザー加工装置 |
JP2017133997A (ja) | 2016-01-29 | 2017-08-03 | 株式会社東京精密 | 亀裂検出装置及び亀裂検出方法 |
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US20220044969A1 (en) | 2022-02-10 |
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WO2020071458A1 (ja) | 2020-04-09 |
KR20210066845A (ko) | 2021-06-07 |
CN118116798A (zh) | 2024-05-31 |
CN112805811B (zh) | 2024-03-26 |
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