JP7477515B2 - 基板処理チャンバ用のポンピング装置及び方法 - Google Patents
基板処理チャンバ用のポンピング装置及び方法 Download PDFInfo
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- 238000005086 pumping Methods 0.000 title claims description 98
- 239000000758 substrate Substances 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 17
- 239000012530 fluid Substances 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 31
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 31
- 239000010909 process residue Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/5096—Flat-bed apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Description
Claims (15)
- 基板処理チャンバ用のポンピングリングであって、
上壁、下壁、内側半径方向壁、及び外側半径方向壁を含む本体と、
前記上壁、前記下壁、前記内側半径方向壁、及び前記外側半径方向壁によって画定される環帯と、
前記環帯に流体連結された前記本体の第1の排気ポートと、
前記環帯に流体連結された前記本体の第2の排気ポートと、
前記第1の排気ポートに隣接して前記環帯内に配置された第1のバッフルと、
前記第2の排気ポートに隣接して前記環帯内に配置された第2のバッフルと
を備え、
前記第1の排気ポート及び前記第2の排気ポートは、それらの間に直線軸を画定し、
前記第1のバッフル及び前記第2のバッフルは、それぞれの第1のバッフル又は第2のバッフルの端部と前記直線軸との間で測定されるバッフル角度で配置され、前記バッフル角度が0.01度から55度の範囲内である、ポンピングリング。 - 前記本体は、流体を前記環帯内へ方向づけするように構成された1又は複数の開口部を更に含み、前記第1の排気ポート及び前記第2の排気ポートは、フォアラインに流体連結される、請求項1に記載のポンピングリング。
- 前記第1のバッフル及び前記第2のバッフルは両方とも湾曲している、請求項1に記載のポンピングリング。
- 前記バッフル角度が30度から55度の範囲内である、請求項1に記載のポンピングリング。
- 前記第1のバッフル及び前記第2のバッフルの前記バッフル角度が30度である、請求項4に記載のポンピングリング。
- 前記第1の排気ポート及び前記第2の排気ポートは、前記本体の円周軸の周りで互いに等距離に配置される、請求項5に記載のポンピングリング。
- 基板処理チャンバ用のポンピングリングであって、
上壁、下壁、内側半径方向壁、及び外側半径方向壁を含む本体と、
前記上壁、前記下壁、前記内側半径方向壁、及び前記外側半径方向壁によって画定される環帯と、
前記環帯に流体連結された前記本体の第1の排気ポートと、
前記環帯に流体連結された前記本体の第2の排気ポートと、
前記第1の排気ポートに隣接して前記環帯内に配置された第1のバッフルと、
前記第2の排気ポートに隣接して前記環帯内に配置された第2のバッフルと
を備え、
前記第1のバッフル及び前記第2のバッフルは、流体を、それぞれの第1のバッフル及び第2のバッフルの第1の端部及び第2の端部の周りへ方向づけするように構成され、前記流体は、処理ガス及び処理残留物を含む、ポンピングリング。 - 基板処理チャンバ用のポンピングリングであって、
上面、上壁、下壁、内側半径方向壁、及び外側半径方向壁を含む本体と、
それを通して流体を方向づけするように構成された前記本体の1又は複数の開口部と、
前記本体の第1の排気ポートと、
前記本体の第2の排気ポートと、
前記第1の排気ポートに隣接して配置された第1のバッフルと、
前記第2の排気ポートに隣接して配置された第2のバッフルと
を備え、
前記第1の排気ポート及び前記第2の排気ポートは、それらの間に直線軸を画定し、
前記第1のバッフル及び前記第2のバッフルは、それぞれの第1のバッフル又は第2のバッフルの端部と前記直線軸との間で測定されるバッフル角度で配置され、前記バッフル角度が0.01度から55度の範囲内である、ポンピングリング。 - 前記第1の排気ポート及び前記第2の排気ポートは、前記本体の円周軸の周りで互いに等距離に配置される、請求項8に記載のポンピングリング。
- 前記バッフル角度は、30度から55度の範囲内である、請求項8に記載のポンピングリング。
- 基板処理チャンバであって、
チャンバ本体と、
前記チャンバ本体内に配置されたペデスタルと、
前記ペデスタルの周りに配置され、上壁、下壁、内側半径方向壁、及び外側半径方向壁を含むポンピングリングと、
前記上壁、前記下壁、前記内側半径方向壁、及び前記外側半径方向壁によって画定される環帯と、
前記環帯に流体連結された前記ポンピングリングの第1の排気ポートと、
前記環帯に流体連結された前記ポンピングリングの第2の排気ポートと、
前記第1の排気ポートに隣接して前記環帯内に配置された第1のバッフルと、
前記第2の排気ポートに隣接して前記環帯内に配置された第2のバッフルと、
前記第1の排気ポート及び前記第2の排気ポートに流体連結されたフォアラインと
を備え、
前記第1の排気ポート及び前記第2の排気ポートは、それらの間に直線軸を画定し、
前記第1のバッフル及び前記第2のバッフルは、それぞれの第1のバッフル又は第2のバッフルの端部と前記直線軸との間で測定されるバッフル角度で配置され、前記バッフル角度が0.01度から55度の範囲内である、基板処理チャンバ。 - 前記第1の排気ポート及び前記第2の排気ポートは、前記ポンピングリングの円周軸の周りで互いに180度に配置される、請求項11に記載の基板処理チャンバ。
- 前記ポンピングリングは、流体を前記チャンバ本体の内部領域から前記環帯へ方向づけするように構成された1又は複数の開口部を更に含み、前記流体は、処理ガス及び処理残留物を含む、請求項11に記載の基板処理チャンバ。
- 前記第1の排気ポートが、第1の垂直導管及び水平導管を介して前記フォアラインに流体連結され、前記第2の排気ポートが、第2の垂直導管及び前記水平導管を介して前記フォアラインに流体連結され、
前記水平導管が、前記第1の垂直導管に結合された第1の部分、前記第2の垂直導管に結合された第2の部分、及び前記フォアラインに結合された第3の部分を含み、前記第1の部分及び前記第2の部分は前記第3の部分から分岐し、
前記水平導管が、前記第1の垂直導管に隣接する第1の端部と、前記第2の垂直導管に隣接する第2の端部とを含む、請求項11に記載の基板処理チャンバ。 - 前記第1の垂直導管が、前記チャンバ本体の第1の導管を介して前記第1の排気ポートに流体連結され、前記第2の垂直導管が、前記チャンバ本体の第2の導管を介して前記第2の排気ポートに流体連結され、前記フォアラインが、前記第1の排気ポート及び前記第2の排気ポートから流体を排気するように構成される、請求項14に記載の基板処理チャンバ。
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US201962789905P | 2019-01-08 | 2019-01-08 | |
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US201962826407P | 2019-03-29 | 2019-03-29 | |
US62/826,407 | 2019-03-29 | ||
PCT/US2019/061656 WO2020146047A1 (en) | 2019-01-08 | 2019-11-15 | Pumping apparatus and method for substrate processing chambers |
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KR102477302B1 (ko) | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
US11952660B2 (en) * | 2019-07-29 | 2024-04-09 | Applied Materials, Inc. | Semiconductor processing chambers and methods for cleaning the same |
KR20210029663A (ko) * | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US20220018024A1 (en) * | 2020-07-19 | 2022-01-20 | Applied Materials, Inc. | Multi-stage pumping liner |
US12012653B2 (en) | 2021-03-23 | 2024-06-18 | Applied Materials, Inc. | Cleaning assemblies for substrate processing chambers |
US20230265560A1 (en) * | 2022-02-23 | 2023-08-24 | Applied Materials, Inc. | Pumping liner and methods of manufacture and use thereof |
WO2024076480A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Annular pumping for chamber |
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JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
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US11078568B2 (en) | 2021-08-03 |
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CN113169101B (zh) | 2022-09-30 |
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