JP7475462B2 - 隣接する導電層のスタックの研磨中のプロファイル制御 - Google Patents
隣接する導電層のスタックの研磨中のプロファイル制御 Download PDFInfo
- Publication number
- JP7475462B2 JP7475462B2 JP2022544299A JP2022544299A JP7475462B2 JP 7475462 B2 JP7475462 B2 JP 7475462B2 JP 2022544299 A JP2022544299 A JP 2022544299A JP 2022544299 A JP2022544299 A JP 2022544299A JP 7475462 B2 JP7475462 B2 JP 7475462B2
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- Prior art keywords
- polishing
- polishing rate
- calculating
- substrate
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 307
- 239000000758 substrate Substances 0.000 claims description 91
- 230000008859 change Effects 0.000 claims description 51
- 238000011065 in-situ storage Methods 0.000 claims description 44
- 238000012544 monitoring process Methods 0.000 claims description 33
- 238000004422 calculation algorithm Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 238000004590 computer program Methods 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 23
- 238000005259 measurement Methods 0.000 claims description 14
- 230000001419 dependent effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 6
- 230000008093 supporting effect Effects 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 claims 2
- 230000006870 function Effects 0.000 description 18
- 238000012545 processing Methods 0.000 description 15
- 230000007704 transition Effects 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000001976 improved effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000013515 script Methods 0.000 description 2
- 230000004622 sleep time Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063036392P | 2020-06-08 | 2020-06-08 | |
US63/036,392 | 2020-06-08 | ||
PCT/US2021/036189 WO2021252363A1 (en) | 2020-06-08 | 2021-06-07 | Profile control during polishing of a stack of adjacent conductive layers |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023517450A JP2023517450A (ja) | 2023-04-26 |
JP7475462B2 true JP7475462B2 (ja) | 2024-04-26 |
Family
ID=78816791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022544299A Active JP7475462B2 (ja) | 2020-06-08 | 2021-06-07 | 隣接する導電層のスタックの研磨中のプロファイル制御 |
Country Status (6)
Country | Link |
---|---|
US (4) | US11850699B2 (zh) |
JP (1) | JP7475462B2 (zh) |
KR (1) | KR20220116313A (zh) |
CN (1) | CN115175785B (zh) |
TW (2) | TWI810069B (zh) |
WO (1) | WO2021252363A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI810069B (zh) | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
US20240139906A1 (en) * | 2022-10-27 | 2024-05-02 | Applied Materials, Inc. | Control of carrier head sweep and platen shape |
CN115855886B (zh) * | 2022-11-25 | 2023-08-01 | 广东汇发塑业科技有限公司 | 一种多层共挤制膜的均匀性检测方法 |
CN116372781B (zh) * | 2023-04-20 | 2023-11-07 | 山东欣立得光电科技有限公司 | 一种led屏幕衬底自动化清洗抛光*** |
CN117067042B (zh) * | 2023-10-17 | 2024-01-30 | 杭州泓芯微半导体有限公司 | 一种研磨机及其控制方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008503356A (ja) | 2004-06-21 | 2008-02-07 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
WO2008032753A1 (en) | 2006-09-12 | 2008-03-20 | Ebara Corporation | Polishing apparatus and polishing method |
JP2009094382A (ja) | 2007-10-11 | 2009-04-30 | Ebara Corp | 研磨監視方法、研磨装置、およびモニタリング装置 |
JP2014513435A (ja) | 2011-04-27 | 2014-05-29 | アプライド マテリアルズ インコーポレイテッド | 金属残留物または金属ピラーの渦電流モニタリング |
JP2014514770A (ja) | 2011-04-27 | 2014-06-19 | アプライド マテリアルズ インコーポレイテッド | 高感度渦電流モニタシステム |
JP2016510953A (ja) | 2013-03-15 | 2016-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | インシトゥプロファイル制御(ispc)を用いた残留物クリアリングの動的制御 |
JP2016540383A (ja) | 2013-11-27 | 2016-12-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 予測フィルタを用いた基板研磨中の研磨速度の調整 |
WO2020046502A1 (en) | 2018-08-31 | 2020-03-05 | Applied Materials, Inc. | Polishing system with capacitive shear sensor |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0738561B1 (en) * | 1995-03-28 | 2002-01-23 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations |
US6986698B1 (en) * | 1999-04-01 | 2006-01-17 | Beaver Creek Concepts Inc | Wafer refining |
US6399501B2 (en) | 1999-12-13 | 2002-06-04 | Applied Materials, Inc. | Method and apparatus for detecting polishing endpoint with optical monitoring |
US6433541B1 (en) * | 1999-12-23 | 2002-08-13 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements during the process for removing the film |
US6924641B1 (en) | 2000-05-19 | 2005-08-02 | Applied Materials, Inc. | Method and apparatus for monitoring a metal layer during chemical mechanical polishing |
US6878038B2 (en) * | 2000-07-10 | 2005-04-12 | Applied Materials Inc. | Combined eddy current sensing and optical monitoring for chemical mechanical polishing |
US7156717B2 (en) | 2001-09-20 | 2007-01-02 | Molnar Charles J | situ finishing aid control |
US7024268B1 (en) * | 2002-03-22 | 2006-04-04 | Applied Materials Inc. | Feedback controlled polishing processes |
US7128803B2 (en) | 2002-06-28 | 2006-10-31 | Lam Research Corporation | Integration of sensor based metrology into semiconductor processing tools |
US7112960B2 (en) | 2003-07-31 | 2006-09-26 | Applied Materials, Inc. | Eddy current system for in-situ profile measurement |
US7354332B2 (en) * | 2003-08-04 | 2008-04-08 | Applied Materials, Inc. | Technique for process-qualifying a semiconductor manufacturing tool using metrology data |
US20060105676A1 (en) * | 2004-11-17 | 2006-05-18 | International Business Machines Corporation | Robust Signal Processing Algorithm For End-Pointing Chemical-Mechanical Polishing Processes |
CN101523565B (zh) * | 2006-10-06 | 2012-02-29 | 株式会社荏原制作所 | 加工终点检测方法、研磨方法及研磨装置 |
US7998358B2 (en) | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
JP5080933B2 (ja) | 2007-10-18 | 2012-11-21 | 株式会社荏原製作所 | 研磨監視方法および研磨装置 |
JP5513795B2 (ja) * | 2009-07-16 | 2014-06-04 | 株式会社荏原製作所 | 研磨方法および装置 |
US8295967B2 (en) * | 2008-11-07 | 2012-10-23 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
WO2010056769A2 (en) | 2008-11-14 | 2010-05-20 | Applied Materials, Inc. | Eddy current sensor with enhanced edge resolution |
TW201201957A (en) * | 2010-01-29 | 2012-01-16 | Applied Materials Inc | High sensitivity real time profile control eddy current monitoring system |
US8190285B2 (en) | 2010-05-17 | 2012-05-29 | Applied Materials, Inc. | Feedback for polishing rate correction in chemical mechanical polishing |
US8694144B2 (en) | 2010-08-30 | 2014-04-08 | Applied Materials, Inc. | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
US8779589B2 (en) * | 2010-12-20 | 2014-07-15 | Intel Corporation | Liner layers for metal interconnects |
US20120276662A1 (en) | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal features |
WO2012148716A2 (en) | 2011-04-28 | 2012-11-01 | Applied Materials, Inc. | Varying coefficients and functions for polishing control |
US20140030826A1 (en) | 2012-07-24 | 2014-01-30 | Shinrou Ohta | Polishing method |
TWI530360B (zh) * | 2012-09-28 | 2016-04-21 | 荏原製作所股份有限公司 | 研磨裝置 |
US9490186B2 (en) * | 2013-11-27 | 2016-11-08 | Applied Materials, Inc. | Limiting adjustment of polishing rates during substrate polishing |
US9754846B2 (en) * | 2014-06-23 | 2017-09-05 | Applied Materials, Inc. | Inductive monitoring of conductive trench depth |
US9911664B2 (en) | 2014-06-23 | 2018-03-06 | Applied Materials, Inc. | Substrate features for inductive monitoring of conductive trench depth |
TW201822953A (zh) | 2016-09-16 | 2018-07-01 | 美商應用材料股份有限公司 | 基於溝槽深度的電磁感應監控進行的過拋光 |
KR102395616B1 (ko) * | 2016-10-10 | 2022-05-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 연마를 위한 실시간 프로파일 제어 |
CN110178208B (zh) * | 2017-01-13 | 2023-06-06 | 应用材料公司 | 基于电阻率调整原位监测的测量值 |
TWI794293B (zh) * | 2017-09-25 | 2023-03-01 | 美商應用材料股份有限公司 | 使用製程控制參數矩陣的半導體製造 |
TWI810069B (zh) | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
-
2021
- 2021-05-13 TW TW111134929A patent/TWI810069B/zh active
- 2021-05-13 TW TW110117205A patent/TWI809389B/zh active
- 2021-06-07 WO PCT/US2021/036189 patent/WO2021252363A1/en active Application Filing
- 2021-06-07 US US17/341,283 patent/US11850699B2/en active Active
- 2021-06-07 US US17/341,245 patent/US20210379721A1/en active Pending
- 2021-06-07 CN CN202180015802.8A patent/CN115175785B/zh active Active
- 2021-06-07 JP JP2022544299A patent/JP7475462B2/ja active Active
- 2021-06-07 KR KR1020227026053A patent/KR20220116313A/ko not_active Application Discontinuation
- 2021-06-07 US US17/341,285 patent/US11865664B2/en active Active
-
2023
- 2023-12-15 US US18/542,093 patent/US20240116152A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008503356A (ja) | 2004-06-21 | 2008-02-07 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
WO2008032753A1 (en) | 2006-09-12 | 2008-03-20 | Ebara Corporation | Polishing apparatus and polishing method |
JP2009094382A (ja) | 2007-10-11 | 2009-04-30 | Ebara Corp | 研磨監視方法、研磨装置、およびモニタリング装置 |
JP2014513435A (ja) | 2011-04-27 | 2014-05-29 | アプライド マテリアルズ インコーポレイテッド | 金属残留物または金属ピラーの渦電流モニタリング |
JP2014514770A (ja) | 2011-04-27 | 2014-06-19 | アプライド マテリアルズ インコーポレイテッド | 高感度渦電流モニタシステム |
JP2016510953A (ja) | 2013-03-15 | 2016-04-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | インシトゥプロファイル制御(ispc)を用いた残留物クリアリングの動的制御 |
JP2016540383A (ja) | 2013-11-27 | 2016-12-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 予測フィルタを用いた基板研磨中の研磨速度の調整 |
WO2020046502A1 (en) | 2018-08-31 | 2020-03-05 | Applied Materials, Inc. | Polishing system with capacitive shear sensor |
Also Published As
Publication number | Publication date |
---|---|
US11850699B2 (en) | 2023-12-26 |
US20210379724A1 (en) | 2021-12-09 |
TWI809389B (zh) | 2023-07-21 |
TW202212051A (zh) | 2022-04-01 |
US20240116152A1 (en) | 2024-04-11 |
TWI810069B (zh) | 2023-07-21 |
US11865664B2 (en) | 2024-01-09 |
WO2021252363A1 (en) | 2021-12-16 |
US20210379722A1 (en) | 2021-12-09 |
TW202302273A (zh) | 2023-01-16 |
KR20220116313A (ko) | 2022-08-22 |
JP2023517450A (ja) | 2023-04-26 |
CN115175785B (zh) | 2024-05-07 |
US20210379721A1 (en) | 2021-12-09 |
CN115175785A (zh) | 2022-10-11 |
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