JP7472927B2 - 樹脂シート及びその製造方法、並びに欠点検出方法 - Google Patents
樹脂シート及びその製造方法、並びに欠点検出方法 Download PDFInfo
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- JP7472927B2 JP7472927B2 JP2022042624A JP2022042624A JP7472927B2 JP 7472927 B2 JP7472927 B2 JP 7472927B2 JP 2022042624 A JP2022042624 A JP 2022042624A JP 2022042624 A JP2022042624 A JP 2022042624A JP 7472927 B2 JP7472927 B2 JP 7472927B2
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- XMQSELBBYSAURN-UHFFFAOYSA-M triphenyl(propyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCC)C1=CC=CC=C1 XMQSELBBYSAURN-UHFFFAOYSA-M 0.000 description 1
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- RERMPCBBVZEPBS-UHFFFAOYSA-N tris(2,6-dimethylphenyl)phosphane Chemical compound CC1=CC=CC(C)=C1P(C=1C(=CC=CC=1C)C)C1=C(C)C=CC=C1C RERMPCBBVZEPBS-UHFFFAOYSA-N 0.000 description 1
- IIOSDXGZLBPOHD-UHFFFAOYSA-N tris(2-methoxyphenyl)phosphane Chemical compound COC1=CC=CC=C1P(C=1C(=CC=CC=1)OC)C1=CC=CC=C1OC IIOSDXGZLBPOHD-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- XRALRSQLQXKXKP-UHFFFAOYSA-N tris(3,5-dimethylphenyl)phosphane Chemical compound CC1=CC(C)=CC(P(C=2C=C(C)C=C(C)C=2)C=2C=C(C)C=C(C)C=2)=C1 XRALRSQLQXKXKP-UHFFFAOYSA-N 0.000 description 1
- LFNXCUNDYSYVJY-UHFFFAOYSA-N tris(3-methylphenyl)phosphane Chemical compound CC1=CC=CC(P(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 LFNXCUNDYSYVJY-UHFFFAOYSA-N 0.000 description 1
- RYXYUARTMQUYKV-UHFFFAOYSA-N tris(4-butylphenyl)phosphane Chemical compound C1=CC(CCCC)=CC=C1P(C=1C=CC(CCCC)=CC=1)C1=CC=C(CCCC)C=C1 RYXYUARTMQUYKV-UHFFFAOYSA-N 0.000 description 1
- SPNVODOGUAUMCA-UHFFFAOYSA-N tris(4-ethoxy-2,6-dimethylphenyl)phosphane Chemical compound CC1=CC(OCC)=CC(C)=C1P(C=1C(=CC(OCC)=CC=1C)C)C1=C(C)C=C(OCC)C=C1C SPNVODOGUAUMCA-UHFFFAOYSA-N 0.000 description 1
- LQEKTSMTEYLBLJ-UHFFFAOYSA-N tris(4-ethoxyphenyl)phosphane Chemical compound C1=CC(OCC)=CC=C1P(C=1C=CC(OCC)=CC=1)C1=CC=C(OCC)C=C1 LQEKTSMTEYLBLJ-UHFFFAOYSA-N 0.000 description 1
- PCCAGZSOGFNURV-UHFFFAOYSA-N tris(4-ethylphenyl)phosphane Chemical compound C1=CC(CC)=CC=C1P(C=1C=CC(CC)=CC=1)C1=CC=C(CC)C=C1 PCCAGZSOGFNURV-UHFFFAOYSA-N 0.000 description 1
- UYUUAUOYLFIRJG-UHFFFAOYSA-N tris(4-methoxyphenyl)phosphane Chemical compound C1=CC(OC)=CC=C1P(C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 UYUUAUOYLFIRJG-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- NTUMNRFLAZXNBW-UHFFFAOYSA-N tris(4-propan-2-ylphenyl)phosphane Chemical compound C1=CC(C(C)C)=CC=C1P(C=1C=CC(=CC=1)C(C)C)C1=CC=C(C(C)C)C=C1 NTUMNRFLAZXNBW-UHFFFAOYSA-N 0.000 description 1
- JTOQWGJGVSYTTN-UHFFFAOYSA-N tris(4-propylphenyl)phosphane Chemical compound C1=CC(CCC)=CC=C1P(C=1C=CC(CCC)=CC=1)C1=CC=C(CCC)C=C1 JTOQWGJGVSYTTN-UHFFFAOYSA-N 0.000 description 1
- UQHFPPSBVOIUFM-UHFFFAOYSA-N tris(4-tert-butylphenyl)phosphane Chemical compound C1=CC(C(C)(C)C)=CC=C1P(C=1C=CC(=CC=1)C(C)(C)C)C1=CC=C(C(C)(C)C)C=C1 UQHFPPSBVOIUFM-UHFFFAOYSA-N 0.000 description 1
- UGNAOCDIZFIEQK-UHFFFAOYSA-N tris[4-[(2-methylpropan-2-yl)oxy]phenyl]phosphane Chemical compound C1=CC(OC(C)(C)C)=CC=C1P(C=1C=CC(OC(C)(C)C)=CC=1)C1=CC=C(OC(C)(C)C)C=C1 UGNAOCDIZFIEQK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229920001866 very low density polyethylene Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Description
すなわち、本発明は、下記のものを含む。
前記支持体が有する最大径10μm以上の欠点の数が、5個/cm2以下である、樹脂シート。
[2] 前記欠点が、光学観察によって検出可能な点である、[1]に記載の樹脂シート。
[3] 前記欠点が、前記支持体の内部にある、[1]又は[2]に記載の樹脂シート。
[4] 前記支持体が、プラスチックフィルムである、[1]~[3]のいずれか一項に記載の樹脂シート。
[5] 絶縁層形成用である、[1]~[4]のいずれか一項に記載の樹脂シート。
[6] [1]~[5]のいずれか一項に記載の樹脂シートの製造方法であって;
支持体上に樹脂組成物層を形成する工程と、
前記支持体及び前記樹脂組成物層の光学観察を同時に行って欠点を検出する工程と、を含み;
前記支持体が有する最大径10μm以上の欠点の数が、5個/cm2以下である、樹脂シートの製造方法。
[7] 支持体と前記支持体上に形成された樹脂組成物層とを備える樹脂シートの、前記樹脂組成物層中の欠点検出方法であって、
前記支持体及び前記樹脂組成物層の光学観察を同時に行って欠点を検出する工程を含み、
前記支持体が有する最大径10μm以上の欠点の数が、5個/cm2以下である、欠点検出方法。
[8] 前記支持体が有する最大径10μm以上の欠点が、前記支持体の内部にある、[7]に記載の欠点検出方法。
[9] 前記支持体が、プラスチックフィルムである、[7]又は[8]に記載の欠点検出方法。
本発明の一実施形態に係る樹脂シートは、支持体と、この支持体上に形成された樹脂組成物層と、を備える。樹脂組成物層は、樹脂組成物を含み、好ましくは樹脂組成物のみを含む。そして、本実施形態に係る樹脂シートの支持体が有する最大径10μm以上の欠点の数は、特定の範囲にある。ここで、「欠点」とは、別に断らない限り、光学観察によって検出可能な点を表す。
支持体は、樹脂組成物層を支持する部材である。この支持体は、最大径10μm以上の欠点を有していてもよいが、その欠点の数は少ない。好ましくは、支持体は、最大径10μm以上の欠点を有さない。具体的には、支持体が有する最大径10μm以上の欠点の数は、通常5個/cm2以下、好ましくは4個/cm2以下、より好ましく3個/cm2以下、更に好ましくは2個/cm2以下、特に好ましくは1個/cm2以下であり、理想的には0個/cm2である。
樹脂組成物層は、樹脂組成物を含む。この樹脂組成物は、熱及び光の一方又は両方によって硬化して、プリント配線板及び半導体チップパッケージ等の回路基板の構成部材として用いうる。樹脂組成物が硬化して得られる硬化物を適用しうる回路基板の構成部材としては、絶縁層、ソルダーレジスト、アンダーフィル材、ダイボンディング材、半導体封止材、穴埋め樹脂、部品埋め込み樹脂等が挙げられる。したがって、樹脂組成物としては、(A)硬化性樹脂を含む組成物を用いうる。以下、樹脂組成物の組成の具体例を説明するが、樹脂組成物としては下記に例示する以外のものを用いてもよい。
樹脂シートは、支持体及び樹脂組成物層に組み合わせて、任意の層を備えていてもよい。任意の層としては、例えば、樹脂組成物層の支持体と接合していない面(即ち、支持体とは反対側の面)に設けられた、支持体に準じた保護フィルムが挙げられる。保護フィルムの厚さは、特に限定されるものではないが、例えば、1μm~40μmである。保護フィルムにより、樹脂組成物層の表面へのゴミ等の異物の付着を抑制したり、樹脂組成物層が傷付くことを抑制したりできる。
樹脂シートの形状は、特に制限はない。よって、樹脂シートは、枚葉のシートであってもよい。ただし、樹脂シートの連続的な製造を可能にして製造効率を高める観点から、樹脂シートは、長尺のシートであることが好ましい。長尺のシートとは、別に断らない限り、ロール状に巻き取り可能な程度の長さを有するシートをいい、例えば、幅に対して10倍以上の長さを有するシートでありうる。
上述した樹脂シートは、例えば、
(i)支持体上に樹脂組成物層を形成する工程と、
(ii)支持体及び樹脂組成物層の光学観察を同時に行って欠点を検出する工程と、
を含む製造方法により、製造できる。以下、この製造方法について、詳細に説明する。この製造方法は、好ましくは、クリーンルーム内において行われる。
映像データから検出できる欠点のうち、樹脂組成物層20の欠点には、クラックの原因及び配線形成の妨げとなりうる欠点が含まれうる。したがって、映像データに現れる樹脂組成物層20の欠点から、クラックの原因及び配線形成の妨げとなりうる当該樹脂組成物層の欠点を検出することができる。具体的には、特定値以上の最大径を有する欠点を検出することにより、クラックの原因及び配線形成の妨げとなりうる樹脂組成物層の欠点を検出できる。検出すべき欠点の最大径の閾値を表す前記の特定値は、通常は10μmに設定されるが、10μmよりも大きい別の値を設定してもよく、例えば10μm~100μmの範囲の任意の値を設定しうる。
樹脂シートの製造方法は、例えば、前記のように、製品シート40から、樹脂組成物層20の欠点が検出された部分を除去する工程を含んでいてもよい。
上述した樹脂シートの製造方法における工程(ii)の方法は、樹脂シートの樹脂組成物層の欠点検出方法として実施してもよい。よって、前記の工程(ii)の方法は、工程(i)と別に単独に行ってもよく、工程(i)以外の任意の工程と組み合わせて行ってもよい。この欠点検出方法の内容は、樹脂シートの製造方法における工程(ii)の説明で詳述した通りである。この欠点検出方法によれば、樹脂シートの樹脂組成物層中の欠点を高い精度で検出できる。
上述した樹脂シートは、例えば、絶縁層を形成するための樹脂シート(絶縁層形成用の樹脂シート)として好適に使用することができる。中でも、樹脂シートは、プリント配線板及び半導体チップパッケージ等の回路基板の絶縁層を形成するための樹脂シートとして好適である。特に好ましい例を挙げると、樹脂シートは、多層プリント配線板の層間絶縁層を形成するために用いることが好ましい。また、樹脂シートは、再配線形成層を形成するために用いることが好ましい。再配線形成層とは、絶縁層であって、当該絶縁層上に再配線層を形成されるものを表す。また、再配線層とは、絶縁層としての再配線形成層上に形成される導体層を表す。
(I)内層基板上に、樹脂シートを、樹脂シートの樹脂組成物層が内層基板と接合するように、積層する工程。
(II)樹脂組成物層を硬化して、絶縁層を形成する工程。
支持体として、下記のプラスチックフィルムを用意した。
支持体1:ポリイミドフィルム(東洋紡社製「ゼノマックス」。厚み38μm)。
支持体2:アルキド樹脂系離型剤(リンテック社製「AL-5」)で離型処理したポリエチレンテレフタレートフィルム(東レ社製「ルミラーT6AM」、厚さ38μm)。
支持体3:ポリエチレンテレフタレートフィルム(東レ社製「R80」、厚み38μm)。
支持体4:アルキド樹脂系離型剤を主成分とする離型層を有するポリエチレンテレフタレートフィルム(リンテック社製「AL-5」、厚み38μm)
支持体5:ポリイミドフィルム(東レ・デュポン社製「カプトン200EN」、厚み50μm)
支持体1を、クリーンルーム内で梱包体から取り出し、次に示す手順で観察を行った。
顕微鏡(キーエンス製「VHX-7000」)を用いて、倍率200倍で、厚み方向(入射角0°)において透過光(可視光)による支持体1の光学観察を行った。観察により得られた映像から、周囲(正常部分)とは異なるコントラスト又は色調を有する最大径10μm以上の欠点の個数を数えた。ここで説明する参考例、実施例及び比較例では、黒色又は褐色の欠点が検出されたので、それらの欠点の数を数えた。支持体の観察範囲は1エリアにつき1cm2とし、支持体の任意の課所から5エリアを選んで観察を行った。
支持体1を支持体2に変更した以外は参考例1と同様にして観察を行い、最大径10μm以上の欠点の個数を数えた。
支持体1を支持体3に変更した以外は参考例1と同様にして観察を行い、最大径10μm以上の欠点の個数を数えた。
支持体1を支持体4に変更した以外は参考例1と同様にして観察を行い、最大径10μm以上の欠点の個数を数えた。
支持体1を支持体5に変更した以外は参考例1と同様にして観察を行い、最大径10μm以上の欠点の個数を数えた。
(1-1.樹脂ワニスIの調製)
ビスフェノールAF型エポキシ樹脂(三菱ケミカル社製「YL7760」、エポキシ当量約238g/eq.)12部、ビフェニル型エポキシ樹脂(日本化薬社製「NC3000L」、エポキシ当量約269g/eq.)12部、ビキシレノール型エポキシ樹脂(三菱ケミカル社製「YX4000HK」、エポキシ当量約185g/eq.)12部、及びフェノキシ樹脂(三菱ケミカル社製「YX7553BH30」、固形分30質量%のシクロヘキサノン:メチルエチルケトン(MEK)の1:1溶液)10部を、ソルベントナフサ15部及びMEK2部に撹拌しながら加熱溶解させて、溶液を得た。この溶液を室温にまで冷却した後、そこへ、トリアジン骨格含有クレゾールノボラック系硬化剤(DIC社製「LA-3018-50P」、水酸基当量151g/eq.、固形分50%の2-メトキシプロパノール溶液)6部、活性エステル系硬化剤(DIC社製「HPC-8000-65T」、活性基当量約223g/eq.、不揮発成分65質量%のトルエン溶液)16部、アミン系硬化促進剤(4-ジメチルアミノピリジン(DMAP)、固形分5質量%のMEK溶液)2部、N-フェニル-3-アミノプロピルトリメトキシシラン(信越化学工業社製「KBM573」)で表面処理された球形シリカ(アドマテックス社製「SO-C2」、平均粒径0.50μm)80部を混合し、高速回転ミキサーで均一に分散した後に、カートリッジフィルター(ロキテクノ社製「SHP-050」、濾過効率(メーカー公称値):3μm以上の粒子を99.9%以上カット)で濾過して、樹脂ワニスIを調製した。
支持体1のロールを用意した。このロールから支持体1をクリーンルームにて発出し、上記で得た樹脂ワニスIを、該支持体1の平滑面側の表面に、ダイコーターを用いて均一に塗布し、80℃~110℃(平均100℃)にて2分間乾燥させて、樹脂組成物層を形成した。樹脂組成物層の厚さは20μmであった。
続いて、樹脂組成物層の表面に、保護フィルムとしてポリプロピレンフィルム(王子特殊紙社製「アルファンMA-411」、厚さ15μm)を、常圧下、60℃、線圧6kgf/cmにて連続的にラミネートし、樹脂シートを得た。この樹脂シートは、支持体1、樹脂組成物層及び保護フィルムをこの順に備えていた。この樹脂シートを巻き取ってロール体を得た(巻き取り長60m)。得られたロール体を幅340mmにスリットして、幅340mm、長さ60mの樹脂シートのロールを得た。
前記のロールから樹脂シートを発出し、保護フィルムをゆっくり剥離して、樹脂組成物層を露出させた。静電気による異物付着を防ぐため、保護フィルムの剥離は、支持体1をイオナイザーに当てながら行った。前記の剥離により、支持体1及び樹脂組成物層のみを備える樹脂シートとしての試料シートを得た。
支持体1を支持体2に変更し、支持体2の離型層面側にワニスを塗布した以外は実施例1と同様にして、樹脂シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
実施例1を支持体3に変更した以外は実施例1と同様にして、樹脂シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
実施例1を支持体4に変更し、支持体4の離型層面側にワニスを塗布した以外は実施例1と同様にして、樹脂シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
実施例1を支持体5に変更した以外は実施例1と同様にして、樹脂シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
実施例1で使用した支持体を、ガラス支持体に変更して、下記の方法により、ガラス支持体及び樹脂組成物層を備える積層板としてのコントロールサンプルAを製造した。
ガラス支持体として、ガラスの平板を用意した。窒素ブロワーを用いてガラス支持体の表面の付着物を除去した。実施例1で得た樹脂ワニスIをバーコーターにてガラス支持体の片面に均一に塗布し、80℃~110℃(平均100℃)にて2分間乾燥させて、樹脂組成物層を形成した。樹脂組成物層の厚さは20μmであった。以上の操作により、ガラス支持体と、このガラス支持体上に形成された樹脂組成物層とを備えるコントロールサンプルAを得た。
実施例1で得た樹脂ワニスIに、黒色フィラー(エプソンアトミックス社製「KUAMET 6B2」、Fe基アモルファス磁性材料、平均粒径25μm)を添加し、攪拌機(シンキー社製「あわとり練太郎」)で混合して、黒色フィラー入りの樹脂ワニスIIを作製した。黒色フィラーは、樹脂ワニスII中の黒色フィラーの濃度が50ppmとなる量を用いた。
支持体1を支持体2に変更した以外は実施例2と同様にして、接着シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
支持体1を支持体3に変更した以外は実施例2と同様にして、接着シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
支持体1を支持体4に変更した以外は実施例2と同様にして、接着シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
支持体1を支持体5に変更した以外は実施例2と同様にして、接着シートの製造及び観察を行い、最大径10μm以上の欠点の個数を数えた。
実施例2で使用した支持体を、ガラス支持体に変更して、下記の方法により、ガラス支持体及び樹脂組成物層を備える積層板としてのコントロールサンプルBを製造した。
ガラス支持体として、ガラスの平板を用意した。窒素ブロワーを用いてガラス支持体の表面の付着物を除去した。実施例2で得た黒色フィラー入りの樹脂ワニスIIをバーコーターにてガラス支持体の片面に均一に塗布し、80℃~110℃(平均100℃)にて2分間乾燥させて、黒色フィラー入りの樹脂組成物層を形成した。黒色フィラー入りの樹脂組成物層の厚さは20μmであった。以上の操作により、ガラス支持体と、このガラス支持体上に形成された黒色フィラー入りの樹脂組成物層とを備えるコントロールサンプルBを得た。
上述した実施例、比較例及び参考例の結果を、下記の表に示す。下記の表において「検出誤差」の欄の数値は、実施例及び比較例の欠点の平均個数と、それに対応するコントロールの欠点の平均個数との差を表す。よって、実施例1、比較例1、比較例2、比較例3及び比較例4の検出誤差の値は、実施例1、比較例1、比較例2、比較例3及び比較例4の欠点の平均個数と、参考例6の欠点の平均個数との差を表す。また、実施例2、比較例5、比較例6、比較例7及び比較例8の検出誤差の値は、実施例2、比較例5、比較例6、比較例7及び比較例8の欠点の平均個数と、参考例7の欠点の平均個数との差を表す。したがって、検出誤差の値の絶対値が小さいほど、誤検出の頻度が低く、よって、樹脂組成物層中の小さい欠点の検出精度が高いことを表す。
10 支持体
20 樹脂組成物層
30 被検査シート(樹脂シート)
40 製品シート(樹脂シート)
50 樹脂組成物
60 ロール
100 層形成装置
110 塗布装置
120 乾燥装置
200 検出装置
210 光源部
220 撮影部
230 出力部
300 発出装置
Claims (8)
- 支持体と、前記支持体上に形成された樹脂組成物層と、を備える樹脂シートであって、
樹脂シートが、前記支持体を除去されて前記樹脂組成物層によって回路基板の絶縁層を形成するためのものであり、
前記支持体が有する最大径10μm以上の欠点の数が、5個/cm2以下である、樹脂シート。 - 前記欠点が、光学観察によって検出可能な点である、請求項1に記載の樹脂シート。
- 前記欠点が、前記支持体の内部にある、請求項1又は2に記載の樹脂シート。
- 前記支持体が、プラスチックフィルムである、請求項1~3のいずれか一項に記載の樹脂シート。
- 請求項1~4のいずれか一項に記載の樹脂シートの製造方法であって;
支持体上に樹脂組成物層を形成する工程と、
前記支持体及び前記樹脂組成物層の光学観察を同時に行って欠点を検出する工程と、を含み;
前記支持体が有する最大径10μm以上の欠点の数が、5個/cm2以下である、樹脂シートの製造方法。 - 支持体と前記支持体上に形成された樹脂組成物層とを備え、前記支持体を除去されて前記樹脂組成物層によって回路基板の絶縁層を形成するための樹脂シートの、前記樹脂組成物層中の欠点検出方法であって、
前記支持体及び前記樹脂組成物層の光学観察を同時に行って欠点を検出する工程を含み、前記支持体が有する最大径10μm以上の欠点の数が、5個/cm2以下である、欠点検出方法。 - 前記支持体が有する最大径10μm以上の欠点が、前記支持体の内部にある、請求項6に記載の欠点検出方法。
- 前記支持体が、プラスチックフィルムである、請求項6又は7に記載の欠点検出方法。
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