JP7440660B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
- Publication number
- JP7440660B2 JP7440660B2 JP2022560697A JP2022560697A JP7440660B2 JP 7440660 B2 JP7440660 B2 JP 7440660B2 JP 2022560697 A JP2022560697 A JP 2022560697A JP 2022560697 A JP2022560697 A JP 2022560697A JP 7440660 B2 JP7440660 B2 JP 7440660B2
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- Prior art keywords
- wafer
- susceptor
- substrate
- holder
- outer region
- Prior art date
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- 238000001947 vapour-phase growth Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 65
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 44
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 266
- 238000010586 diagram Methods 0.000 description 60
- 239000007789 gas Substances 0.000 description 52
- 239000006227 byproduct Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 230000005484 gravity Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Description
R1-D1>R4・・・(式1)
第1の実施形態の気相成長装置は、反応室と、反応室の中に設けられ基板を載置するホルダと、反応室の中に設けられ、ホルダの下方に位置する第1のヒータと、反応室の中に設けられ、ホルダの上方に位置する第2のヒータと、を備え、ホルダは、内側領域と、内側領域を囲み基板が載置された場合に基板を囲む環状の外側領域と、内側領域の上に設けられ基板の下面を支持可能な環状で円弧部分を有する支持部と、を含み、円弧部分の外周端と、外側領域の内周端との距離が6mm以下であり、支持部の幅が3mm以上であり、基板の中心とホルダの中心とが一致するように基板がホルダに載置された場合に、基板の半径をR1、円弧部分の外周端の半径をR4、基板の外周端と、円弧部分に対向する外側領域の内周端との距離をD1、と定義すると、下記式1を充足する。
R1-D1>R4・・・(式1)
R2-D1>R3・・・(式2)
R2+D1<R4・・・(式3)
R1-D1>R4・・・(式1)
R2-D1>R3・・・(式2)
R2+D1<R4・・・(式3)
R1-D1>R4・・・(式1)
R2-D1>R3・・・(式2)
R2+D1<R4・・・(式3)
R2-D1<R3・・・(式2’)
R2+D1>R4・・・(式3’)
R2-D1>R3・・・(式2)
R2+D1<R4・・・(式3)
第2の実施形態の気相成長装置は、内側領域は円板形状ではなく、円環形状である点で第1の実施形態と異なる。以下、第1の実施形態と重複する内容については一部記述を省略する。
第3の実施形態の気相成長装置は、ホルダの外側領域の内周側に複数の凸部を有する点で、第1の実施形態の気相成長装置と異なる。以下、第1の実施形態と重複する内容については一部記述を省略する。
第4の実施形態の気相成長装置は、ホルダの外側領域が、炭素を含む第1部材と、第1部材の上に設けられ、第1部材と分離可能で少なくとも表面が炭化珪素を含む第2部材を含む点で、第1の実施形態の気相成長装置と異なる。以下、第1の実施形態と重複する内容については一部記述を省略する。
第5の実施形態の気相成長装置は、ホルダの外側領域の第1部材の内周端に、上方に突き出た内周固定部が設けられる点で、第4の実施形態の気相成長装置と異なる。以下、第1の実施形態及び第4の実施形態と重複する内容については一部記述を省略する。
第6の実施形態の気相成長装置は、ホルダが、ベース部と、ベース部の上の分離可能な脱着部を有する点で、第4の実施形態の気相成長装置と異なる。以下、第1の実施形態及び第4の実施形態と重複する内容については一部記述を省略する。
第7の実施形態の気相成長装置は、基板はオリエンテーションフラットを有し、支持部は基板がホルダに載置された場合にオリエンテーションフラットに沿う直線部分を有し、直線部分に対向する外側領域の内周端は、直線形状である点で、第1の実施形態の気相成長装置と異なる。以下、第1の実施形態と重複する内容については一部記述を省略する。
第8の実施形態の気相成長装置は、直線部分の外周端と外側領域の内周端との距離は、円弧部分の外周端と外側領域の内周端との距離よりも大きい点で、第7の実施形態の気相成長装置と異なる。以下、第1の実施形態及び第7の実施形態と重複する内容については一部記述を省略する。
14 サセプタ(ホルダ)
22 第1のヒータ
42 第2のヒータ
50 内側領域
52 外側領域
54 支持部
54a 円弧部分
54b 直線部分
56 第1部材
58 第2部材
100 気相成長装置
OF オリエンテーションフラット
W ウェハ(基板)
Wa 膜質保証領域
X 距離
w 幅
Claims (10)
- 反応室と、
前記反応室の中に設けられ基板を載置するホルダと、
前記反応室の中に設けられ、前記ホルダの下方に位置する第1のヒータと、
前記反応室の中に設けられ、前記ホルダの上方に位置する第2のヒータと、
を備え、
前記ホルダは、内側領域と、前記内側領域を囲み前記基板が載置された場合に前記基板を囲む環状の外側領域と、前記内側領域の上に設けられ前記基板の下面を支持可能な環状で円弧部分を有する支持部と、を含み、
前記円弧部分の外周端と、前記外側領域の内周端との距離が6mm以下であり、
前記支持部の幅が3mm以上であり、
前記基板の中心と前記ホルダの中心とが一致するように前記基板が前記ホルダに載置された場合に、
前記基板の半径をR1、
前記基板の膜質保証領域の半径をR2、
前記円弧部分の内周端の半径をR3、
前記円弧部分の外周端の半径をR4、
前記基板の外周端と、前記円弧部分に対向する前記外側領域の内周端との距離をD1、
と定義すると、下記式1、下記式2、及び下記式3を充足する、気相成長装置。
R1-D1>R4・・・(式1)
R2-D1>R3・・・(式2)
R2+D1<R4・・・(式3) - (削除)
- 前記外側領域が、炭素を含む第1部材と、前記第1部材の上に設けられ、前記第1部材と分離可能で少なくとも表面が炭化珪素を含む第2部材を含む請求項1記載の気相成長装置。
- 前記第1部材と前記第2部材との境界は、前記ホルダに載置された前記基板の上面よりも下方にある請求項3記載の気相成長装置。
- 前記第2部材は炭化珪素で構成される請求項3記載の気相成長装置。
- 前記第1部材は、前記第1部材の外周端の上方に突き出て、前記第2部材を囲む外周固定部を有する請求項3記載の気相成長装置。
- 前記第1部材は、前記第1部材の内周端の上方に突き出て、前記第2部材に囲まれる内周固定部を有する請求項6記載の気相成長装置。
- 前記ホルダは、前記外側領域の内周側に複数の凸部を有する請求項1記載の気相成長装置。
- 前記基板はオリエンテーションフラットを有し、
前記支持部は前記基板が前記ホルダに載置された場合に前記オリエンテーションフラットに沿う直線部分を有し、
前記直線部分に対向する前記外側領域の内周端は、直線形状である請求項1記載の気相成長装置。 - 前記直線部分の外周端と前記外側領域の内周端との距離は、前記円弧部分の外周端と前記外側領域の内周端との距離よりも大きい請求項9記載の気相成長装置。
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WO2009060912A1 (ja) | 2007-11-08 | 2009-05-14 | Sumco Corporation | エピタキシャル膜成長方法、ウェーハ支持構造およびサセプタ |
JP2018037537A (ja) | 2016-08-31 | 2018-03-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
JP2018073886A (ja) | 2016-10-25 | 2018-05-10 | 株式会社ニューフレアテクノロジー | 気相成長装置、環状ホルダ、及び、気相成長方法 |
JP2018082100A (ja) | 2016-11-17 | 2018-05-24 | 昭和電工株式会社 | 搭載プレート、ウェハ支持台、及び化学気相成長装置 |
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JP2018037537A (ja) | 2016-08-31 | 2018-03-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
JP2018073886A (ja) | 2016-10-25 | 2018-05-10 | 株式会社ニューフレアテクノロジー | 気相成長装置、環状ホルダ、及び、気相成長方法 |
JP2018082100A (ja) | 2016-11-17 | 2018-05-24 | 昭和電工株式会社 | 搭載プレート、ウェハ支持台、及び化学気相成長装置 |
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