JP7436581B1 - ひずみゲージ - Google Patents
ひずみゲージ Download PDFInfo
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- JP7436581B1 JP7436581B1 JP2022123522A JP2022123522A JP7436581B1 JP 7436581 B1 JP7436581 B1 JP 7436581B1 JP 2022123522 A JP2022123522 A JP 2022123522A JP 2022123522 A JP2022123522 A JP 2022123522A JP 7436581 B1 JP7436581 B1 JP 7436581B1
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- 239000011651 chromium Substances 0.000 description 57
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- 230000008859 change Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910019590 Cr-N Inorganic materials 0.000 description 3
- 229910019588 Cr—N Inorganic materials 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- -1 polyethylene naphthalate Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910005933 Ge—P Inorganic materials 0.000 description 2
- 229910018106 Ni—C Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- XVOCEVMHNRHJMX-UHFFFAOYSA-N ethyl-hydroxy-oxogermane Chemical compound CC[Ge](O)=O XVOCEVMHNRHJMX-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000737 Duralumin Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
図1は、第1実施形態に係るひずみゲージを例示する平面図である。図2は、第1実施形態に係るひずみゲージを例示する断面図(その1)であり、図1のA-A線に沿う断面を示している。
本実施形態に係るひずみゲージ1では、基材10上に、抵抗体30と、配線40と、電極50と、カバー層60とが形成される。なお、基材10とこれらの部材の層の間に別の層(後述する機能層等)が形成されてもよい。
まず、横感度比について説明する。図4は、横感度比について説明する図である。図4において、軸Mは、ひずみを測定したい方向を示している。図4では、グリッド方向が軸M方向を向くひずみゲージ1A、及びグリッド方向が軸Mと垂直な方向を向くひずみゲージ1Bが起歪体100に貼り付けられている。なお、図4におけるx軸、y軸、及びz軸は、互いに直交する軸を示している。軸Mはy軸と平行であり、軸Mと垂直な方向はx軸と平行である。
発明者らは、ひずみゲージのサンプルを作製し、抵抗体の膜厚と横感度比及びゲージ率との関係について調べた。
発明者らは、実施例1と同一仕様のひずみゲージのサンプルを膜厚ごとに複数個ずつ作製し、抵抗体の膜厚とひずみ限界との関係について調べた。ただし、抵抗体の膜厚の種類は、1100nm、800nm、500nm、200nm、100nm、50nm、30nmとした。
実施例1の結果から、横感度比及びゲージ率に着目すると、抵抗体30の膜厚Tは200nm以上することが好ましい。これにより、横感度比が70%以下、かつゲージ率が5以上となるように、抵抗体30の膜厚Tが200nm以上とされているひずみゲージを実現できる。そして、このひずみゲージにより、ひずみ検出の精度向上を図ることができる。
Claims (5)
- 基材と、
前記基材上に形成された抵抗体と、を有し、
前記抵抗体は、Crを主成分とする材料から形成され、
横感度比が70%以下かつゲージ率が5以上となるように、前記抵抗体の膜厚が200nm以上とされている、ひずみゲージ。 - 横感度比が70%以下、ゲージ率が5以上、かつひずみ限界が6000×10-6以上となるように、前記抵抗体の膜厚が200nm以上800nm以下とされている、請求項1に記載のひずみゲージ。
- 前記ひずみ限界は前記抵抗体の膜厚と負の相関を有し前記抵抗体の膜厚が厚いほど低くなる、請求項2に記載のひずみゲージ。
- 前記ゲージ率は前記抵抗体の膜厚に依存せず、かつ前記横感度比は前記抵抗体の膜厚と負の相関を有し前記抵抗体の膜厚が厚いほど低くなる、請求項1乃至3の何れか一項に記載のひずみゲージ。
- 前記抵抗体は、Cr、CrN、及びCr2Nを含む膜から形成されている請求項1乃至3の何れか一項に記載のひずみゲージ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022123522A JP7436581B1 (ja) | 2022-08-02 | 2022-08-02 | ひずみゲージ |
PCT/JP2023/027714 WO2024029454A1 (ja) | 2022-08-02 | 2023-07-28 | ひずみゲージ |
Applications Claiming Priority (1)
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JP2022123522A JP7436581B1 (ja) | 2022-08-02 | 2022-08-02 | ひずみゲージ |
Publications (2)
Publication Number | Publication Date |
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JP7436581B1 true JP7436581B1 (ja) | 2024-02-21 |
JP2024027199A JP2024027199A (ja) | 2024-03-01 |
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JP2022123522A Active JP7436581B1 (ja) | 2022-08-02 | 2022-08-02 | ひずみゲージ |
Country Status (2)
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JP (1) | JP7436581B1 (ja) |
WO (1) | WO2024029454A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003035506A (ja) | 2001-07-19 | 2003-02-07 | Honda Motor Co Ltd | 圧力感度及び温度感度を低減したひずみゲージ及びその設計方法 |
JP2021025782A (ja) | 2019-07-31 | 2021-02-22 | ミネベアミツミ株式会社 | センサモジュール |
WO2021200693A1 (ja) | 2020-03-30 | 2021-10-07 | ミネベアミツミ株式会社 | ひずみゲージ |
JP2021181936A (ja) | 2020-05-19 | 2021-11-25 | 公益財団法人電磁材料研究所 | 振動センサ |
WO2022154057A1 (ja) | 2021-01-18 | 2022-07-21 | ミネベアミツミ株式会社 | ひずみゲージ |
-
2022
- 2022-08-02 JP JP2022123522A patent/JP7436581B1/ja active Active
-
2023
- 2023-07-28 WO PCT/JP2023/027714 patent/WO2024029454A1/ja unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003035506A (ja) | 2001-07-19 | 2003-02-07 | Honda Motor Co Ltd | 圧力感度及び温度感度を低減したひずみゲージ及びその設計方法 |
JP2021025782A (ja) | 2019-07-31 | 2021-02-22 | ミネベアミツミ株式会社 | センサモジュール |
WO2021200693A1 (ja) | 2020-03-30 | 2021-10-07 | ミネベアミツミ株式会社 | ひずみゲージ |
JP2021181936A (ja) | 2020-05-19 | 2021-11-25 | 公益財団法人電磁材料研究所 | 振動センサ |
WO2022154057A1 (ja) | 2021-01-18 | 2022-07-21 | ミネベアミツミ株式会社 | ひずみゲージ |
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JP2024027199A (ja) | 2024-03-01 |
WO2024029454A1 (ja) | 2024-02-08 |
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