JP7432846B2 - Manufacturing method of light emitting device - Google Patents

Manufacturing method of light emitting device Download PDF

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JP7432846B2
JP7432846B2 JP2022094309A JP2022094309A JP7432846B2 JP 7432846 B2 JP7432846 B2 JP 7432846B2 JP 2022094309 A JP2022094309 A JP 2022094309A JP 2022094309 A JP2022094309 A JP 2022094309A JP 7432846 B2 JP7432846 B2 JP 7432846B2
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JP2023067723A (en
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弘明 ▲蔭▼山
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Nichia Corp
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実施形態は、発光装置の製造方法に関する。 Embodiments relate to a method for manufacturing a light emitting device.

特許文献１には、支持基板に発光素子を貼り付け、発光素子の半導体層上に、蛍光体粒子等を吹き付けて蛍光体層を形成する発光装置の製造方法が開示されている。 Patent Document 1 discloses a method for manufacturing a light emitting device in which a light emitting element is attached to a support substrate and a phosphor layer is formed by spraying phosphor particles or the like onto a semiconductor layer of the light emitting element.

特開２０１６－１４９３８９号公報Japanese Patent Application Publication No. 2016-149389

本発明の一実施形態は、歩留まりを向上できる発光装置の製造方法を提供することを目的とする。 One embodiment of the present invention aims to provide a method for manufacturing a light emitting device that can improve yield.

本発明の一実施形態に係る発光装置の製造方法は、複数の凹部を有する第１面と、前記第１面の反対側に位置する第２面と、前記第１面と前記第２面とを接続する側面と、を有する半導体構造体を含む複数の発光素子を準備する工程と、各前記発光素子の前記第２面と、粘着性を有するシート部材とを対向させて、各前記発光素子の前記側面が前記シート部材に覆われるように、前記複数の発光素子を前記シート部材に配置する工程と、透光性を有する未硬化の樹脂部材を含む第１部材上に、波長変換物質を含み、未硬化の前記樹脂部材の硬度より高い硬度を有する第２部材が配置された状態で、前記第１部材が、前記複数の凹部内に配置され、かつ、前記シート部材と前記第２部材との間に配置されるように、前記第１部材を前記複数の発光素子の前記第１面に接触させる工程と、前記第１部材を硬化する工程と、前記シート部材を前記複数の発光素子から除去する工程と、を備える。 A method for manufacturing a light emitting device according to an embodiment of the present invention includes a first surface having a plurality of recesses, a second surface located on the opposite side of the first surface, and a first surface and the second surface. a step of preparing a plurality of light emitting elements each including a semiconductor structure having a side surface connecting the light emitting elements; arranging the plurality of light emitting elements on the sheet member so that the side surfaces of the light emitting elements are covered with the sheet member, and applying a wavelength conversion substance on a first member including an uncured resin member having translucency. the first member is disposed within the plurality of recesses, and a second member having a hardness higher than that of the uncured resin member is disposed, and the sheet member and the second member bringing the first member into contact with the first surfaces of the plurality of light emitting elements so that the sheet member is placed between the plurality of light emitting elements; curing the first member; and placing the sheet member between the plurality of light emitting elements. and a step of removing it from the container.

本発明の一実施形態によれば、歩留まりを向上できる発光装置の製造方法を提供することができる。 According to one embodiment of the present invention, it is possible to provide a method for manufacturing a light emitting device that can improve yield.

第１の実施形態に係る発光モジュールを示す断面図である。FIG. 1 is a cross-sectional view showing a light emitting module according to a first embodiment. 図１に示す半導体構造体の第１面の一部を拡大して示す上面図である。FIG. 2 is an enlarged top view of a part of the first surface of the semiconductor structure shown in FIG. 1; 第１の実施形態に係る発光モジュールを示す上面図である。It is a top view showing the light emitting module concerning a 1st embodiment. 第１の実施形態に係る発光モジュールの製造方法を示すフローチャートである。It is a flow chart showing a manufacturing method of a light emitting module concerning a 1st embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 第１の実施形態に係る発光モジュールの製造方法を説明するための断面図である。FIG. 2 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to the first embodiment. 参考例に係る発光モジュールの製造方法を説明するための断面図である。It is a sectional view for explaining a manufacturing method of a light emitting module concerning a reference example. 第１の実施形態の変形例に係る発光モジュールの製造方法を説明するための断面図である。FIG. 7 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to a modification of the first embodiment. 第２の実施形態に係る発光モジュールを示す断面図である。FIG. 3 is a cross-sectional view showing a light emitting module according to a second embodiment.

以下に、本発明の各実施形態について図面を参照しつつ説明する。
図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。 Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be shown differently depending on the drawing.
In the specification of this application and each figure, elements similar to those already explained are given the same reference numerals, and detailed explanations are omitted as appropriate.

＜第１の実施形態＞
先ず、第１の実施形態について説明する。
図１は、本実施形態に係る発光モジュール１０を示す断面図である。
図２Ａは、図１に示す半導体構造体１２１の第１面１２１ｓ１の一部を拡大して示す上面図である。
図２Ｂは、本実施形態に係る発光モジュール１０を示す上面図である。
本実施形態に係る発光モジュール１０は、配線基板１１と、発光装置１２と、樹脂部材１３と、を備える。発光装置１２は、発光素子１２０と、第１部材１３０と、第２部材１４０と、を備える。以下、発光モジュール１０の各部について詳述する。 <First embodiment>
First, a first embodiment will be described.
FIG. 1 is a sectional view showing a light emitting module 10 according to this embodiment.
FIG. 2A is an enlarged top view of a part of the first surface 121s1 of the semiconductor structure 121 shown in FIG.
FIG. 2B is a top view showing the light emitting module 10 according to this embodiment.
The light emitting module 10 according to this embodiment includes a wiring board 11, a light emitting device 12, and a resin member 13. The light emitting device 12 includes a light emitting element 120, a first member 130, and a second member 140. Each part of the light emitting module 10 will be described in detail below.

以下では、説明をわかりやすくするために、ＸＹＺ直交座標系を用いる。以下、発光素子１２０、第１部材１３０、および第２部材１４０が並ぶ方向を「Ｚ方向」とする。また、Ｚ方向と直交する方向を「Ｘ方向」とし、Ｚ方向およびＸ方向と直交する方向を「Ｙ方向」とする。また、発光モジュール１０の構造を説明する際、Ｚ方向のうち、発光素子１２０から第２部材１４０に向かう方向を「上方向」とし、その逆方向を「下方向」とするが、これらの方向は相対的なものであり、重力方向とは無関係である。 In the following, an XYZ orthogonal coordinate system will be used to make the explanation easier to understand. Hereinafter, the direction in which the light emitting element 120, the first member 130, and the second member 140 are lined up will be referred to as the "Z direction." Further, the direction orthogonal to the Z direction is referred to as the "X direction", and the direction orthogonal to the Z direction and the X direction is referred to as the "Y direction". Furthermore, when describing the structure of the light emitting module 10, in the Z direction, the direction from the light emitting element 120 toward the second member 140 will be referred to as the "upward direction," and the opposite direction will be referred to as the "downward direction." is relative and has nothing to do with the direction of gravity.

配線基板１１は、例えば、絶縁層と、絶縁層上に配置された複数の配線と、を含む。配線基板１１の形状は、例えば、平板状である。配線基板１１の上面および下面は、Ｘ－Ｙ平面に概ね平行な面である。 The wiring board 11 includes, for example, an insulating layer and a plurality of wirings arranged on the insulating layer. The shape of the wiring board 11 is, for example, a flat plate. The upper and lower surfaces of the wiring board 11 are planes that are generally parallel to the XY plane.

発光素子１２０は、配線基板１１上に配置される。発光素子１２０は、半導体構造体１２１と、光反射性電極１２２と、絶縁膜１２３と、ｎ側電極１２４と、ｐ側電極１２５と、を含む。 Light emitting element 120 is placed on wiring board 11 . The light emitting element 120 includes a semiconductor structure 121, a light reflective electrode 122, an insulating film 123, an n-side electrode 124, and a p-side electrode 125.

半導体構造体１２１は、例えば、窒化物半導体からなる複数の半導体層が積層された構造体である。ここで、「窒化物半導体」とは、ＩｎｘＡｌｙＧａ１－ｘ－ｙＮ（０≦ｘ≦１，０≦ｙ≦１，ｘ＋ｙ≦１）なる化学式において組成比ｘ及びｙをそれぞれの範囲内で変化させた全ての組成の半導体を含むものとする。半導体構造体１２１は、上方から下方に向かって順に、ｎ側半導体層１２６と、活性層１２７と、ｐ側半導体層１２８と、を含む。 The semiconductor structure 121 is, for example, a structure in which a plurality of semiconductor layers made of nitride semiconductor are stacked. Here, "nitride semiconductor" is defined by the chemical formula In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1), where the composition ratios x and y are respectively It shall include semiconductors of all compositions varied within this range. The semiconductor structure 121 includes, in order from top to bottom, an n-side semiconductor layer 126, an active layer 127, and a p-side semiconductor layer 128.

ｎ側半導体層１２６の上面は、半導体構造体１２１の上面に相当する。以下、半導体構造体の上面を「第１面１２１ｓ１」という。第１面１２１ｓ１には、複数の凹部１２１ａが配置される。第１面１２１ｓ１において、複数の凹部１２１ａの間の領域１２１ｂは、例えば、Ｘ－Ｙ平面に概ね平行な領域である。上面視において、複数の凹部１２１ａは、領域１２１ｂに囲まれている。 The upper surface of the n-side semiconductor layer 126 corresponds to the upper surface of the semiconductor structure 121. Hereinafter, the upper surface of the semiconductor structure will be referred to as the "first surface 121s1." A plurality of recesses 121a are arranged on the first surface 121s1. In the first surface 121s1, the region 121b between the plurality of recesses 121a is, for example, a region generally parallel to the XY plane. In a top view, the plurality of recesses 121a are surrounded by a region 121b.

複数の凹部１２１ａは、上面視において千鳥状に配列される。ただし、複数の凹部１２１ａの配列パターンは上記に限定されない。例えば、複数の凹部１２１ａは行列状に配列されてもよい。 The plurality of recesses 121a are arranged in a staggered manner when viewed from above. However, the arrangement pattern of the plurality of recesses 121a is not limited to the above. For example, the plurality of recesses 121a may be arranged in a matrix.

各凹部１２１ａの形状は、図１および図２Ａに示すように、略円錐形状である。各凹部１２１ａの深さＬ１は、特に限定されない。各凹部１２１ａの深さＬ１は、例えば、０．５μｍ以上３μｍ以下であることが好ましい。また、各凹部１２１ａの直径Ｌ２は、特に限定されない。各凹部１２１ａの直径Ｌ２は、例えば、１μｍ以上６μｍ以下であることが好ましい。ただし、各凹部１２１ａの形状及び大きさは、上記の形状及び大きさに特に限定されない。例えば各凹部１２１ａの形状は、錐台形状、円錐形状、多角錐形状、半球状等であってもよい。 The shape of each recess 121a is approximately conical, as shown in FIGS. 1 and 2A. The depth L1 of each recess 121a is not particularly limited. It is preferable that the depth L1 of each recess 121a is, for example, 0.5 μm or more and 3 μm or less. Further, the diameter L2 of each recess 121a is not particularly limited. It is preferable that the diameter L2 of each recess 121a is, for example, 1 μm or more and 6 μm or less. However, the shape and size of each recess 121a are not particularly limited to the above shape and size. For example, the shape of each recess 121a may be a truncated pyramid, a cone, a polygonal pyramid, a hemisphere, or the like.

ｎ側半導体層１２６の下面は、図１に示すように、外周領域１２６ａと、被覆領域１２６ｂと、複数のコンタクト領域１２６ｃと、を含む。外周領域１２６ａは、ｎ側半導体層１２６の下面の外周縁から一定の範囲である。外周領域１２６ａは、Ｘ－Ｙ平面に概ね平行な領域である。被覆領域１２６ｂは、外周領域１２６ａの内側に位置する。被覆領域１２６ｂは、Ｘ－Ｙ平面に概ね平行な領域である。Ｚ方向における被覆領域１２６ｂの位置は、外周領域１２６ａの位置よりも下方である。各コンタクト領域１２６ｃは、被覆領域１２６ｂの外周縁よりも内側に位置する。各コンタクト領域１２６ｃは、Ｘ－Ｙ平面に概ね平行な領域である。Ｚ方向における各コンタクト領域１２６ｃの位置は、被覆領域１２６ｂの位置よりも上方であって、外周領域１２６ａの位置と概ね同じである。 As shown in FIG. 1, the lower surface of the n-side semiconductor layer 126 includes an outer peripheral region 126a, a covering region 126b, and a plurality of contact regions 126c. The outer peripheral region 126a is a certain range from the outer peripheral edge of the lower surface of the n-side semiconductor layer 126. The outer peripheral region 126a is a region approximately parallel to the XY plane. The covering region 126b is located inside the outer peripheral region 126a. The covered area 126b is an area approximately parallel to the XY plane. The position of the covering region 126b in the Z direction is lower than the position of the outer peripheral region 126a. Each contact region 126c is located inside the outer periphery of the covering region 126b. Each contact region 126c is a region generally parallel to the XY plane. The position of each contact region 126c in the Z direction is above the position of the covering region 126b, and is approximately the same as the position of the outer peripheral region 126a.

活性層１２７は、ｎ側半導体層１２６の下面の被覆領域１２６ｂの概ね全域を覆う。ｐ側半導体層１２８は、活性層１２７の下面の概ね全域を覆う。活性層１２７およびｐ側半導体層１２８は、ｎ側半導体層１２６の下面の外周領域１２６ａおよび各コンタクト領域１２６ｃを露出する。 The active layer 127 covers almost the entire area of the covering region 126b on the lower surface of the n-side semiconductor layer 126. The p-side semiconductor layer 128 covers almost the entire lower surface of the active layer 127. The active layer 127 and the p-side semiconductor layer 128 expose the outer peripheral region 126a of the lower surface of the n-side semiconductor layer 126 and each contact region 126c.

以下、半導体構造体１２１の表面において、ｎ側半導体層１２６の下面のうち、ｎ側半導体層１２６の下面の外周縁、すなわち外周領域１２６ａの外周縁よりも内側に位置する面を「第２面１２１ｓ２」という。第２面１２１ｓ２は、第１面１２１ｓ１の反対側に位置する。また、第１面１２１ｓ１と第２面１２１ｓ２の間に位置し、第１面１２１ｓ１と第２面１２１ｓ２に接続される面を「側面１２１ｓ３」という。 Hereinafter, on the surface of the semiconductor structure 121, the surface located inside the outer peripheral edge of the lower surface of the n-side semiconductor layer 126, that is, the outer peripheral edge of the outer peripheral region 126a, will be referred to as a "second surface". 121s2”. The second surface 121s2 is located on the opposite side of the first surface 121s1. Further, a surface located between the first surface 121s1 and the second surface 121s2 and connected to the first surface 121s1 and the second surface 121s2 is referred to as a "side surface 121s3."

光反射性電極１２２は、ｐ側半導体層１２８の下面に配置される。光反射性電極１２２は、ｐ側半導体層１２８の下面の少なくとも一部を覆う。光反射性電極１２２は、ｐ側半導体層１２８に接する。これにより、光反射性電極１２２は、ｐ側半導体層１２８に電気的に接続される。光反射性電極１２２には、例えば、銀（Ａｇ）、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）、チタン（Ｔｉ）、白金（Ｐｔ）、またはこれらの金属を主成分とする合金等を用いることができる。 The light reflective electrode 122 is arranged on the lower surface of the p-side semiconductor layer 128. The light reflective electrode 122 covers at least a portion of the lower surface of the p-side semiconductor layer 128. The light reflective electrode 122 is in contact with the p-side semiconductor layer 128. Thereby, the light reflective electrode 122 is electrically connected to the p-side semiconductor layer 128. For example, silver (Ag), aluminum (Al), nickel (Ni), titanium (Ti), platinum (Pt), or an alloy containing these metals as main components can be used for the light-reflective electrode 122. can.

絶縁膜１２３は、半導体構造体１２１および光反射性電極１２２の下方に配置される。絶縁膜１２３は、光反射性電極１２２の下面および半導体構造体１２１の第２面１２１ｓ２を部分的に覆う。絶縁膜１２３には、ｎ側半導体層１２６の複数のコンタクト領域１２６ｃを露出する複数の貫通穴１２３ａと、光反射性電極１２２の下面を露出する貫通穴１２３ｂと、が配置される。 Insulating film 123 is disposed below semiconductor structure 121 and light reflective electrode 122 . The insulating film 123 partially covers the lower surface of the light reflective electrode 122 and the second surface 121s2 of the semiconductor structure 121. A plurality of through holes 123a exposing the plurality of contact regions 126c of the n-side semiconductor layer 126 and a through hole 123b exposing the lower surface of the light reflective electrode 122 are arranged in the insulating film 123.

絶縁膜１２３には、酸化シリコン（ＳｉＯ２）または窒化シリコン（ＳｉＮ）等の絶縁材料を用いることができる。絶縁膜１２３は、単層構造であってもよいし、多層構造であってもよい。 For the insulating film 123, an insulating material such as silicon oxide (SiO 2 ) or silicon nitride (SiN) can be used. The insulating film 123 may have a single layer structure or a multilayer structure.

ｎ側電極１２４は、絶縁膜１２３の下方に配置される。ｎ側電極１２４は、各貫通穴１２３ａを介して、ｎ側半導体層１２６の各コンタクト領域１２６ｃに接する。これにより、ｎ側電極１２４は、ｎ側半導体層１２６に電気的に接続される。ｎ側電極１２４は、導電部材を介して配線基板１１の一の配線に電気的に接続される。導電部材には、例えば、金属バンプや半田等を用いることができる。 The n-side electrode 124 is arranged below the insulating film 123. The n-side electrode 124 contacts each contact region 126c of the n-side semiconductor layer 126 via each through hole 123a. Thereby, the n-side electrode 124 is electrically connected to the n-side semiconductor layer 126. The n-side electrode 124 is electrically connected to one wiring of the wiring board 11 via a conductive member. For example, metal bumps, solder, or the like can be used as the conductive member.

ｐ側電極１２５は、絶縁膜１２３の下方に配置され、ｎ側電極１２４から離隔する。また、ｐ側電極１２５は、貫通穴１２３ｂを介して、光反射性電極１２２に接する。これにより、ｐ側電極１２５は、ｐ側半導体層１２８に電気的に接続される。ｐ側電極１２５は、導電部材を介して配線基板１１の他の配線に電気的に接続される。 The p-side electrode 125 is arranged below the insulating film 123 and separated from the n-side electrode 124. Moreover, the p-side electrode 125 is in contact with the light reflective electrode 122 via the through hole 123b. Thereby, the p-side electrode 125 is electrically connected to the p-side semiconductor layer 128. The p-side electrode 125 is electrically connected to other wiring on the wiring board 11 via a conductive member.

ｎ側電極１２４およびｐ側電極１２５には、アルミニウム（Ａｌ）ニッケル（Ｎｉ）、チタン（Ｔｉ）、白金（Ｐｔ）、またはこれらの金属を主成分とする合金等を用いることができる。 For the n-side electrode 124 and the p-side electrode 125, aluminum (Al), nickel (Ni), titanium (Ti), platinum (Pt), or an alloy containing these metals as main components can be used.

ただし、発光素子１２０の構成は、半導体構造体１２１を含み、半導体構造体１２１の第１面１２１ｓ１に複数の凹部１２１ａが配置されていれば、上記に限定されない。例えば、ｎ側半導体層１２６とｎ側電極１２４とが接する位置、およびｐ側半導体層１２８と光反射性電極１２２とが接する位置は、図１に示す位置に特に限定されない。また、ｎ側電極１２４とｎ側半導体層１２６は、電気的に接続されていればよく、ｎ側電極１２４とｎ側半導体層１２６との間に、１以上の導電部材が介在してもよい。また、ｐ側電極１２５と光反射性電極１２２は、電気的に接続されていればよく、ｐ側電極１２５と光反射性電極１２２との間に、１以上の導電部材が介在してもよい。また、発光素子１２０に光反射性電極１２２が配置されておらず、ｐ側電極１２５がｐ側半導体層１２８に接してもよい。 However, the configuration of the light emitting element 120 is not limited to the above as long as it includes the semiconductor structure 121 and a plurality of recesses 121a are arranged on the first surface 121s1 of the semiconductor structure 121. For example, the position where the n-side semiconductor layer 126 and the n-side electrode 124 contact and the position where the p-side semiconductor layer 128 and the light reflective electrode 122 contact are not particularly limited to the positions shown in FIG. 1. Further, the n-side electrode 124 and the n-side semiconductor layer 126 only need to be electrically connected, and one or more conductive members may be interposed between the n-side electrode 124 and the n-side semiconductor layer 126. . Further, the p-side electrode 125 and the light-reflective electrode 122 only need to be electrically connected, and one or more conductive members may be interposed between the p-side electrode 125 and the light-reflective electrode 122. . Alternatively, the light reflective electrode 122 may not be arranged in the light emitting element 120, and the p-side electrode 125 may be in contact with the p-side semiconductor layer 128.

第２部材１４０は、発光素子１２０の上方に配置される。第２部材１４０の形状は、例えば、平板状である。第２部材１４０の表面は、上面１４１と、上面１４１の反対側に位置する下面１４２とを含む。上面１４１および下面１４２は、Ｘ－Ｙ平面に概ね平行である。 The second member 140 is arranged above the light emitting element 120. The shape of the second member 140 is, for example, a flat plate. The surface of the second member 140 includes an upper surface 141 and a lower surface 142 located on the opposite side of the upper surface 141. Upper surface 141 and lower surface 142 are generally parallel to the XY plane.

Ｚ方向に見て、第２部材１４０の外周縁は、本実施形態では、発光素子１２０の第１面１２１ｓ１の外周縁よりも外側に位置する。ただし、Ｚ方向にみて第２部材１４０の外周は、第１面１２１ｓ１の外周縁と一致してもよい。 When viewed in the Z direction, the outer peripheral edge of the second member 140 is located on the outer side than the outer peripheral edge of the first surface 121s1 of the light emitting element 120 in this embodiment. However, the outer periphery of the second member 140 may coincide with the outer periphery of the first surface 121s1 when viewed in the Z direction.

第２部材１４０は、例えば、波長変換物質の焼結体である。波長変換物質は、発光素子１２０が発する光の一部を波長変換し、発光素子１２０が発する光の発光ピーク波長と異なる発光ピーク波長の光を発する。発光装置１２は、半導体構造体１２１が発する光と、第２部材１４０が発する光との混色光を出射する。ただし、半導体構造体１２１が発する光の大部分を第２部材１４０が波長変換し、発光装置１２からは主に第２部材１４０が発する光が出射してもよい。波長変換物質には、例えば、蛍光体の粒子を用いることができる。蛍光体としては、イットリウム・アルミニウム・ガーネット系蛍光体（例えば、Ｙ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ）、ルテチウム・アルミニウム・ガーネット系蛍光体（例えば、Ｌｕ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ）、テルビウム・アルミニウム・ガーネット系蛍光体（例えば、Ｔｂ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ）、ＣＣＡ系蛍光体（例えば、Ｃａ１０（ＰＯ４）６Ｃｌ２：Ｅｕ）、ＳＡＥ系蛍光体（例えば、Ｓｒ４Ａｌ１４Ｏ２５：Ｅｕ）、クロロシリケート系蛍光体（例えば、Ｃａ８ＭｇＳｉ４Ｏ１６Ｃｌ２：Ｅｕ）、βサイアロン系蛍光体（例えば、（Ｓｉ，Ａｌ）３（Ｏ，Ｎ）４：Ｅｕ）若しくはαサイアロン系蛍光体（例えば、Ｃａ（Ｓｉ，Ａｌ）１２（Ｏ，Ｎ）１６：Ｅｕ）等の酸窒化物系蛍光体、ＳＬＡ系蛍光体（例えば、ＳｒＬｉＡｌ３Ｎ４：Ｅｕ）、ＣＡＳＮ系蛍光体（例えば、ＣａＡｌＳｉＮ３：Ｅｕ）若しくはＳＣＡＳＮ系蛍光体（例えば、（Ｓｒ，Ｃａ）ＡｌＳｉＮ３：Ｅｕ）等の窒化物系蛍光体、ＫＳＦ系蛍光体（例えば、Ｋ２ＳｉＦ６：Ｍｎ）、ＫＳＡＦ系蛍光体（例えば、Ｋ２Ｓｉ０．９９Ａｌ０．０１Ｆ５．９９：Ｍｎ）若しくはＭＧＦ系蛍光体（例えば、３．５ＭｇＯ・０．５ＭｇＦ２・ＧｅＯ２：Ｍｎ）等のフッ化物系蛍光体、ペロブスカイト構造を有する蛍光体（例えば、ＣｓＰｂ（Ｆ，Ｃｌ，Ｂｒ，Ｉ）３）、又は、量子ドット蛍光体（例えば、ＣｄＳｅ、ＩｎＰ、ＡｇＩｎＳ２又はＡｇＩｎＳｅ２）等を用いることができる。 The second member 140 is, for example, a sintered body of a wavelength conversion material. The wavelength conversion substance wavelength-converts a portion of the light emitted by the light-emitting element 120, and emits light having an emission peak wavelength different from the emission peak wavelength of the light emitted by the light-emitting element 120. The light emitting device 12 emits mixed color light of the light emitted by the semiconductor structure 121 and the light emitted by the second member 140. However, the second member 140 may convert the wavelength of most of the light emitted by the semiconductor structure 121, and the light emitted from the second member 140 may mainly be emitted from the light emitting device 12. For example, phosphor particles can be used as the wavelength conversion substance. Examples of the phosphor include yttrium-aluminum-garnet-based phosphor (e.g., Y 3 (Al, Ga) 5 O 12 :Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu 3 (Al, Ga) 5 O). 12 :Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb 3 (Al, Ga) 5 O 12 :Ce), CCA-based phosphor (e.g., Ca 10 (PO 4 ) 6 Cl 2 :Eu), SAE-based phosphors (e.g., Sr 4 Al 14 O 25 :Eu), chlorosilicate-based phosphors (e.g., Ca 8 MgSi 4 O 16 Cl 2 :Eu), β-sialon-based phosphors (e.g., (Si, Al)) Oxynitride-based phosphors such as 3 (O,N) 4 :Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), SLA-based phosphors (e.g. , SrLiAl 3 N 4 :Eu), nitride-based phosphors such as CASN-based phosphors (e.g., CaAlSiN 3 :Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN 3 :Eu), KSF-based phosphors (e.g., K 2 SiF 6 :Mn), KSAF-based phosphor (e.g., K 2 Si 0.99 Al 0.01 F 5.99 :Mn), or MGF-based phosphor (e.g., 3.5MgO.0. Fluoride-based phosphors such as 5MgF 2 .GeO 2 :Mn), phosphors with a perovskite structure (e.g. CsPb(F,Cl,Br,I) 3 ), or quantum dot phosphors (e.g. CdSe, InP). , AgInS 2 or AgInSe 2 ), etc. can be used.

第２部材１４０の厚さは、第１部材１３０の厚さよりも厚い。第２部材１４０の厚さは、例えば、３０μｍ以上２００μｍ以下とすることができる。 The thickness of the second member 140 is greater than the thickness of the first member 130. The thickness of the second member 140 can be, for example, 30 μm or more and 200 μm or less.

第１部材１３０は、半導体構造体１２１と第２部材１４０との間に配置される。第１部材１３０は、本実施形態では、半導体構造体１２１の第１面１２１ｓ１および第２部材１４０の下面１４２の概ね全域を覆う。具体的には、第１部材１３０は、半導体構造体１２１の第１面１２１ｓ１の各凹部１２１ａ内および複数の凹部１２１ａの間の領域１２１ｂ上に配置される。また、Ｚ方向において、第１部材１３０は、第２部材１４０の下面１４２のうち、半導体構造体１２１の第１面１２１ｓ１の外側に位置する領域を覆う。 The first member 130 is arranged between the semiconductor structure 121 and the second member 140. In this embodiment, the first member 130 covers substantially the entire first surface 121s1 of the semiconductor structure 121 and the lower surface 142 of the second member 140. Specifically, the first member 130 is arranged in each recess 121a of the first surface 121s1 of the semiconductor structure 121 and on the region 121b between the plurality of recesses 121a. Further, in the Z direction, the first member 130 covers a region of the lower surface 142 of the second member 140 located outside the first surface 121s1 of the semiconductor structure 121.

第１部材１３０は、透光性を有する樹脂部材１３１を含む。ここで、「透光性」とは、入射した光の７０％以上、好ましくは８０％以上を透過可能であることを意味する。また、樹脂部材１３１は、未硬化の樹脂を硬化させてなる。樹脂部材１３１には、熱硬化性樹脂、または紫外光を照射することにより硬化する樹脂等を用いることができる。第２部材１４０の硬度は、本実施形態では、硬化した状態の樹脂部材１３１の硬度よりも高い。ただし、第２部材１４０の硬度と、硬化した状態の樹脂部材１３１の硬度との大小関係は、上記に限定されない。 The first member 130 includes a resin member 131 having translucency. Here, "translucent" means that 70% or more, preferably 80% or more of incident light can be transmitted. Further, the resin member 131 is made by curing uncured resin. For the resin member 131, a thermosetting resin, a resin that hardens by irradiation with ultraviolet light, or the like can be used. In this embodiment, the hardness of the second member 140 is higher than the hardness of the resin member 131 in a hardened state. However, the magnitude relationship between the hardness of the second member 140 and the hardness of the resin member 131 in a hardened state is not limited to the above.

第１部材１３０は、樹脂部材１３１中に配置された波長変換物質１３２をさらに含む。第１部材１３０の波長変換物質１３２には、第２部材１４０に用いる波長変換物質と同じものを用いることができる。ただし、第１部材１３０は、波長変換物質１３２を含まなくてもよい。 The first member 130 further includes a wavelength converting material 132 disposed in the resin member 131 . The wavelength converting material 132 of the first member 130 can be the same as the wavelength converting material used for the second member 140. However, the first member 130 may not include the wavelength conversion substance 132.

第１部材１３０の厚さは、例えば、１０μｍ以上１００μｍ以下とすることができる。第１部材１３０のうち凹部１２１ａに配置された第１部材１３０の厚さは、第１部材１３０のうち領域１２１ｂ１に配置された第１部材１３０の厚さよりも薄い。第１部材１３０のうち凹部１２１ａに配置された第１部材１３０の厚さは、例えば、１μｍ以上１０μｍ以下である。第１部材１３０のうち領域１２１ｂ１に配置された第１部材１３０の厚さは、例えば、３μｍ以上５０μｍ以下である。 The thickness of the first member 130 can be, for example, 10 μm or more and 100 μm or less. The thickness of the first member 130 disposed in the recess 121a among the first members 130 is thinner than the thickness of the first member 130 disposed in the region 121b1 among the first members 130. The thickness of the first member 130 disposed in the recess 121a is, for example, 1 μm or more and 10 μm or less. The thickness of the first member 130 disposed in the region 121b1 among the first members 130 is, for example, 3 μm or more and 50 μm or less.

樹脂部材１３は、配線基板１１上に配置される。樹脂部材１３は、Ｚ方向に見て発光装置１２を囲む。具体的には、樹脂部材１３は、発光素子１２０における半導体構造体１２１の側面１２１ｓ３と、第１部材１３０の側面および下面において発光素子１２０から露出する領域と、第２部材１４０の側面と、を覆う。また、樹脂部材１３は、図２Ｂに示すように、Ｚ方向に見て、発光素子１２０における絶縁膜１２３およびｎ側電極１２４を囲むように配置されている。 Resin member 13 is placed on wiring board 11 . The resin member 13 surrounds the light emitting device 12 when viewed in the Z direction. Specifically, the resin member 13 covers the side surface 121s3 of the semiconductor structure 121 in the light emitting element 120, the area exposed from the light emitting element 120 on the side surface and lower surface of the first member 130, and the side surface of the second member 140. cover. Further, as shown in FIG. 2B, the resin member 13 is arranged so as to surround the insulating film 123 and the n-side electrode 124 in the light emitting element 120 when viewed in the Z direction.

樹脂部材１３は、光反射性を有する。樹脂部材１３は、例えば、第２部材１４０が発する光を拡散反射可能な光拡散材を含む。樹脂部材１３に用いられる樹脂としては、例えば、シリコーン樹脂、エポキシ樹脂またはアクリル樹脂等が挙げられる。樹脂部材１３に用いられる光拡散剤としては、例えば、チタニア、シリカ、アルミナ、酸化亜鉛、酸化マグネシウム、ジルコニア、イットリア、フッ化カルシウム、フッ化マグネシウム、五酸化ニオブ、チタン酸バリウム、五酸化タンタル、硫酸バリウムまたはガラスなどの粒子が挙げられる。 The resin member 13 has light reflective properties. The resin member 13 includes, for example, a light diffusing material that can diffusely reflect the light emitted by the second member 140. Examples of the resin used for the resin member 13 include silicone resin, epoxy resin, and acrylic resin. Examples of the light diffusing agent used in the resin member 13 include titania, silica, alumina, zinc oxide, magnesium oxide, zirconia, yttria, calcium fluoride, magnesium fluoride, niobium pentoxide, barium titanate, tantalum pentoxide, Particles such as barium sulfate or glass may be mentioned.

ただし、発光モジュール１０の構成は、上記に限定されない。例えば、発光モジュール１０には、発光装置１２が複数配置されてもよい。この場合、樹脂部材１３は、各発光装置１２を囲むように配置されてもよい。また、発光モジュール１０は、発光装置１２と樹脂部材１３を備え、配線基板１１を備えなくてもよい。 However, the configuration of the light emitting module 10 is not limited to the above. For example, a plurality of light emitting devices 12 may be arranged in the light emitting module 10. In this case, the resin member 13 may be arranged so as to surround each light emitting device 12. Further, the light emitting module 10 includes the light emitting device 12 and the resin member 13, and does not need to include the wiring board 11.

次に、本実施形態に係る発光装置１２を含む発光モジュール１０の製造方法の一例を説明する。
図３は、本実施形態に係る発光モジュール１０の製造方法を示すフローチャートである。
図４Ａ～図７Ｃは、本実施形態に係る発光モジュール１０の製造方法を説明するための断面図である。 Next, an example of a method for manufacturing the light emitting module 10 including the light emitting device 12 according to this embodiment will be described.
FIG. 3 is a flowchart showing a method for manufacturing the light emitting module 10 according to this embodiment.
4A to 7C are cross-sectional views for explaining the method of manufacturing the light emitting module 10 according to this embodiment.

図３に示すように、本実施形態に係る発光装置１２の製造方法は、複数の発光素子１２０を準備する工程Ｓ１１と、複数の発光素子１２０をシート部材９２０に配置する工程Ｓ１２と、基板９１０を半導体構造体１２１から除去する工程Ｓ１３と、第１部材１３０および第２部材１４０を準備する工程Ｓ１４と、第１部材１３０を複数の発光素子１２０の第１面１２１ｓ１に接触させる工程Ｓ１５と、第１部材を硬化する工程Ｓ１６と、シート部材９２０を複数の発光素子１２０から除去する工程Ｓ１７と、複数の発光装置１２に分離する工程Ｓ１８と、を備える。以下、各工程Ｓ１１～Ｓ１８について詳述する。 As shown in FIG. 3, the method for manufacturing the light emitting device 12 according to the present embodiment includes a step S11 of preparing a plurality of light emitting elements 120, a step S12 of arranging the plurality of light emitting elements 120 on a sheet member 920, and a step S12 of preparing a plurality of light emitting elements 120 on a sheet member 920. a step S13 of removing from the semiconductor structure 121, a step S14 of preparing the first member 130 and the second member 140, and a step S15 of bringing the first member 130 into contact with the first surface 121s1 of the plurality of light emitting elements 120, The method includes a step S16 of curing the first member, a step S17 of removing the sheet member 920 from the plurality of light emitting elements 120, and a step S18 of separating the sheet member 920 into a plurality of light emitting devices 12. Each step S11 to S18 will be described in detail below.

先ず、複数の発光素子１２０を準備する工程Ｓ１１を行う。
具体的には、図４Ａに示すように、表面に複数の凸部９１１を有する基板９１０上に半導体構造体１２１をエピタキシャル成長させる。この際、ｎ側半導体層１２６、活性層１２７、およびｐ側半導体層１２８が、この順で形成される。半導体構造体１２１において、基板９１０と対向する面が第１面１２１ｓ１である。 First, step S11 of preparing a plurality of light emitting elements 120 is performed.
Specifically, as shown in FIG. 4A, a semiconductor structure 121 is epitaxially grown on a substrate 910 having a plurality of convex portions 911 on the surface. At this time, the n-side semiconductor layer 126, the active layer 127, and the p-side semiconductor layer 128 are formed in this order. In the semiconductor structure 121, the surface facing the substrate 910 is the first surface 121s1.

基板９１０は、例えばサファイア基板等の透光性を有する基板である。複数の凸部９１１は、千鳥状に配列される。また、各凸部９１１の形状は、略円錐形状である。また、基板９１０の表面において複数の凸部９１１の間の領域９１２は、Ｘ－Ｙ平面に概ね平行な領域である。そのため、第１面１２１ｓ１は、複数の凸部９１１に対応して複数の凹部１２１ａを有する。また、第１面１２１ｓ１の複数の凹部１２１ａの間の領域１２１ｂは、基板９１０の複数の凸部９１１の間の領域９１２に対応してＸ－Ｙ平面に概ね平行な領域となる。ただし、複数の凸部の配列パターンは上記に限定されない。例えば、複数の凸部は行列状に配列されてもよい。また、各凸部の形状は、上記の形状に特に限定されない。例えば各凸部の形状は、錐台形状、円錐形状、多角錐形状、半球状等であってもよい。 The substrate 910 is a light-transmitting substrate such as a sapphire substrate, for example. The plurality of convex portions 911 are arranged in a staggered manner. Further, each convex portion 911 has a substantially conical shape. Further, a region 912 between the plurality of convex portions 911 on the surface of the substrate 910 is a region approximately parallel to the XY plane. Therefore, the first surface 121s1 has a plurality of recesses 121a corresponding to the plurality of convex parts 911. Further, the region 121b between the plurality of concave portions 121a on the first surface 121s1 corresponds to the region 912 between the plurality of convex portions 911 on the substrate 910, and is a region generally parallel to the XY plane. However, the arrangement pattern of the plurality of convex portions is not limited to the above. For example, the plurality of convex portions may be arranged in a matrix. Further, the shape of each convex portion is not particularly limited to the above shape. For example, the shape of each convex portion may be a truncated pyramid, a cone, a polygonal pyramid, a hemisphere, or the like.

次に、半導体構造体１２１の一部をエッチングし、活性層１２７およびｐ側半導体層１２８から、ｎ側半導体層１２６の外周領域１２６ａおよび複数のコンタクト領域１２６ｃを露出させる。 Next, a portion of the semiconductor structure 121 is etched to expose the outer peripheral region 126a of the n-side semiconductor layer 126 and the plurality of contact regions 126c from the active layer 127 and the p-side semiconductor layer 128.

次に、光反射性電極１２２をｐ側半導体層１２８上に形成する。次に、絶縁膜１２３を半導体構造体１２１を覆うように形成する。次に、絶縁膜１２３上に位置しｎ側半導体層１２６と電気的に接続されるｎ側電極１２４および絶縁膜１２３上に位置しｐ側半導体層１２８と電気的に接続されるｐ側電極１２５を形成する。次に、発光素子１２０となる領域の間に位置する半導体構造体１２１を除去し、基板９１０を露出させることで複数の発光素子１２０に分離する。以上により、複数の発光素子１２０が得られる。なお、複数の発光素子１２０を準備する工程の順序は、上記に特に限定されない。 Next, a light reflective electrode 122 is formed on the p-side semiconductor layer 128. Next, an insulating film 123 is formed to cover the semiconductor structure 121. Next, an n-side electrode 124 located on the insulating film 123 and electrically connected to the n-side semiconductor layer 126 and a p-side electrode 125 located on the insulating film 123 and electrically connected to the p-side semiconductor layer 128. form. Next, the semiconductor structure 121 located between the regions that will become the light emitting elements 120 is removed to expose the substrate 910, thereby separating into a plurality of light emitting elements 120. Through the above steps, a plurality of light emitting elements 120 are obtained. Note that the order of the steps for preparing the plurality of light emitting elements 120 is not particularly limited to the above.

次に、複数の発光素子１２０をシート部材９２０に配置する工程Ｓ１２を行う。
具体的には、図４Ｂに示すように、各発光素子１２０の第２面１２１ｓ２と、粘着性を有するシート部材９２０とを対向させて、各発光素子１２０の側面１２１ｓ３がシート部材９２０に覆われるように、複数の発光素子１２０をシート部材９２０に配置する。この際、複数の発光素子１２０は、シート部材９２０中に埋没し、基板９１０は、シート部材９２０に接触してもよい。 Next, step S12 of arranging a plurality of light emitting elements 120 on the sheet member 920 is performed.
Specifically, as shown in FIG. 4B, the second surface 121s2 of each light emitting element 120 and the adhesive sheet member 920 are made to face each other, and the side surface 121s3 of each light emitting element 120 is covered with the sheet member 920. A plurality of light emitting elements 120 are arranged on the sheet member 920 as shown in FIG. At this time, the plurality of light emitting elements 120 may be buried in the sheet member 920, and the substrate 910 may be in contact with the sheet member 920.

シート部材９２０には、ポリイミド等の耐熱性および粘着性を有する材料を用いることができる。 For the sheet member 920, a material having heat resistance and adhesiveness such as polyimide can be used.

次に、図４Ｃに示すように、基板９１０を半導体構造体１２１から除去する工程Ｓ１３を行う。半導体構造体１２１から基板９１０を除去する方法としては、例えば、基板９１０側から半導体構造体１２１と基板９１０との界面の近傍において集光するようにレーザを照射して、半導体構造体１２１から基板９１０を除去するレーザーリフトオフ（ＬＬＯ）等の方法が挙げられる。これにより、半導体構造体１２１の第１面１２１ｓ１が露出する。このように、基板９１０から露出された半導体構造体１２１の表面が第１面１２１ｓ１である。なお、第１面１２１ｓ１を塩酸等により洗浄してもよい。また、第１面１２１ｓ１をウェットエッチングにより粗面化してもよい。第１面１２１ｓ１を粗面化することで光取り出し効率を向上することできる。 Next, as shown in FIG. 4C, step S13 of removing the substrate 910 from the semiconductor structure 121 is performed. As a method for removing the substrate 910 from the semiconductor structure 121, for example, a laser beam is irradiated from the substrate 910 side so as to be focused near the interface between the semiconductor structure 121 and the substrate 910, and the substrate 910 is removed from the semiconductor structure 121. Examples of methods include laser lift-off (LLO) for removing 910. This exposes the first surface 121s1 of the semiconductor structure 121. In this way, the surface of the semiconductor structure 121 exposed from the substrate 910 is the first surface 121s1. Note that the first surface 121s1 may be cleaned with hydrochloric acid or the like. Further, the first surface 121s1 may be roughened by wet etching. Light extraction efficiency can be improved by roughening the first surface 121s1.

次に、第１部材１３０および第２部材１４０を準備する工程Ｓ１４を行う。具体的には、図５Ａに示すように、透光性を有する未硬化の樹脂部材１３１を含む第１部材１３０上に、波長変換物質を含み、未硬化の樹脂部材１３１の硬度より高い硬度を有する第２部材１４０を配置する。本実施形態では、未硬化の樹脂部材１３１中に、波長変換物質１３２が配置される。第２部材１４０の硬度は、例えば、ビッカース硬さにおいて、１０ＧＰａ以上２０ＧＰａ以下である。ここで、「未硬化」とは、硬化反応が進行する前の状態、即ち、硬化反応を進行させるための操作を行う前の状態をいう。硬化反応を進行させるための操作とは、加熱または光照射等が挙げられる。なお、硬化反応を進行させるための操作前に、硬化反応はわずかに進行する場合があるが、未硬化の状態は、そのような状態も包含する。 Next, step S14 of preparing the first member 130 and the second member 140 is performed. Specifically, as shown in FIG. 5A, a first member 130 including an uncured resin member 131 having translucency is coated with a wavelength converting substance and having a hardness higher than that of the uncured resin member 131. A second member 140 having the following structure is disposed. In this embodiment, a wavelength conversion substance 132 is placed in an uncured resin member 131 . The hardness of the second member 140 is, for example, 10 GPa or more and 20 GPa or less in terms of Vickers hardness. Here, "uncured" refers to a state before a curing reaction proceeds, that is, a state before an operation for advancing a curing reaction is performed. Operations for advancing the curing reaction include heating, light irradiation, and the like. In addition, although the curing reaction may progress slightly before the operation for advancing the curing reaction, the uncured state also includes such a state.

次に、図５Ａおよび図５Ｂに示すように、第１部材１３０を複数の発光素子１２０の第１面１２１ｓ１に接触させる工程Ｓ１５を行う。具体的には、第１部材１３０が、複数の凹部１２１ａ内に配置され、かつ、シート部材９２０と第２部材１４０との間に配置されるように、第１部材１３０を複数の発光素子１２０の第１面１２１ｓ１に接触させる。この際、複数の凹部１２１ａの間の領域１２１ｂと第２部材１４０との間には、第１部材１３０を介在させる。 Next, as shown in FIGS. 5A and 5B, step S15 of bringing the first member 130 into contact with the first surface 121s1 of the plurality of light emitting elements 120 is performed. Specifically, the first member 130 is placed between the plurality of light emitting elements 120 such that the first member 130 is disposed within the plurality of recesses 121a and between the sheet member 920 and the second member 140. is brought into contact with the first surface 121s1 of. At this time, the first member 130 is interposed between the second member 140 and the region 121b between the plurality of recesses 121a.

また、この際、第１部材１３０を加熱した状態で第１面１２１ｓ１に接触させる。例えば、第１部材１３０を第１面１２１ｓ１に接触させて第１部材１３０を第１面１２１ｓ１に押し付ける。これにより、第１部材１３０が流動し易くなり、各凹部１２１ａ内に第１部材１３０を配置し易くなる。例えば、各部材をホットプレート上に配置し加熱することで第１部材１３０を加熱した状態とし荷重を印加する。加熱時の温度は、例えば、１５０℃以上２００℃以下とすることできる。印加する荷重は、例えば、７０Ｎ以上１５０Ｎ以下とすることできる。なお、第１部材１３０および第２部材１４０を準備する工程Ｓ１４は、接触させる工程Ｓ１５よりも前に行えばよく、基板９１０を半導体構造体１２１から除去する工程Ｓ１３の後に行う必要はない。 Moreover, at this time, the first member 130 is brought into contact with the first surface 121s1 in a heated state. For example, the first member 130 is brought into contact with the first surface 121s1 and the first member 130 is pressed against the first surface 121s1. This makes it easier for the first member 130 to flow, making it easier to arrange the first member 130 in each recess 121a. For example, by placing each member on a hot plate and heating it, the first member 130 is brought into a heated state and a load is applied. The temperature during heating can be, for example, 150°C or more and 200°C or less. The applied load can be, for example, 70N or more and 150N or less. Note that the step S14 of preparing the first member 130 and the second member 140 may be performed before the contacting step S15, and does not need to be performed after the step S13 of removing the substrate 910 from the semiconductor structure 121.

次に、第１部材１３０を硬化する工程Ｓ１６を行う。硬化後の第１部材１３０の硬度は、例えば、ビッカース硬さにおいて、０．５ＧＰａ以上２ＧＰａ以下である。
次に、図６Ａに示すように、シート部材９２０を複数の発光素子１２０から除去する工程Ｓ１７を行う。 Next, step S16 of curing the first member 130 is performed. The hardness of the first member 130 after curing is, for example, 0.5 GPa or more and 2 GPa or less in terms of Vickers hardness.
Next, as shown in FIG. 6A, step S17 of removing the sheet member 920 from the plurality of light emitting elements 120 is performed.

ここで、参考例の製造方法について図８を参照して説明する。
図８は、参考例に係る発光モジュールの製造方法を説明するための断面図である。参考例では、複数の発光素子１２０がシート部材９２０ではなく、支持基板９３０上に配置された複数の発光素子１２０に第１部材１３０を接触させる。 Here, a manufacturing method of a reference example will be described with reference to FIG. 8.
FIG. 8 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to a reference example. In the reference example, the first member 130 is brought into contact with a plurality of light emitting elements 120 arranged on a support substrate 930 instead of a sheet member 920 .

図８に示すように、複数の発光素子１２０がシート部材９２０ではなく支持基板９３０上に配置される場合、各発光素子１２０の側面１２１ｓ３は、支持基板９３０から露出する。この状態で第２部材１４０を複数の発光素子１２０に接触させた場合、各発光素子１２０と第２部材１４０との間から第１部材１３０の一部が押し出され、側面１２１ｓ３に接触する。このような場合、押し出された第１部材１３０が、発光素子１２０の側面１２１ｓ３を流れて支持基板９３０に付着する可能性がある。第１部材１３０が支持基板９３０に付着した状態で第１部材１３０が硬化した場合、第１部材１３０が支持基板９３０に固着され、複数の発光素子１２０から支持基板９３０を剥離等により除去することが難しくなる。また、支持基板９３０を複数の発光素子１２０から無理に除去させようとした場合、複数の発光素子１２０および第２部材１４０が破損する可能性がある。 As shown in FIG. 8, when the plurality of light emitting elements 120 are arranged on the support substrate 930 instead of the sheet member 920, the side surface 121s3 of each light emitting element 120 is exposed from the support substrate 930. When the second member 140 is brought into contact with the plurality of light emitting elements 120 in this state, a part of the first member 130 is pushed out from between each light emitting element 120 and the second member 140 and comes into contact with the side surface 121s3. In such a case, the extruded first member 130 may flow along the side surface 121s3 of the light emitting element 120 and adhere to the support substrate 930. When the first member 130 is cured with the first member 130 attached to the support substrate 930, the first member 130 is fixed to the support substrate 930, and the support substrate 930 can be removed from the plurality of light emitting elements 120 by peeling or the like. becomes difficult. Further, if the supporting substrate 930 is forcibly removed from the plurality of light emitting elements 120, the plurality of light emitting elements 120 and the second member 140 may be damaged.

これに対して、本実施形態では、図５Ｂに示すように、シート部材９２０に複数の発光素子１２０が配置され、シート部材９２０は、複数の発光素子１２０の側面１２１ｓ３を覆う。そのため、第２部材１４０を複数の発光素子１２０に接触させた際に押し出された第１部材１３０の一部は、半導体構造体１２１の側面１２１ｓ３を流れずに、第２部材１４０の側面に回り込む。すなわち、第１部材１３０において押し出された部分は、第２部材１４０の側面の少なくとも一部を覆う。このように、第１部材１３０が半導体構造体１２１の側面１２１ｓ３に付着することを低減できる。これにより、シート部材９２０を複数の発光素子１２０から剥離等により容易に除去できる。その結果、シート部材９２０を除去する際に複数の発光素子１２０および第２部材１４０が破損することを低減できる。また、シート部材９２０は、可撓性を有することが好ましい。これにより、シート部材９２０を複数の発光素子１２０から容易に除去できる。 In contrast, in this embodiment, as shown in FIG. 5B, a plurality of light emitting elements 120 are arranged on a sheet member 920, and the sheet member 920 covers side surfaces 121s3 of the plurality of light emitting elements 120. Therefore, a part of the first member 130 pushed out when the second member 140 is brought into contact with the plurality of light emitting elements 120 does not flow through the side surface 121s3 of the semiconductor structure 121, but instead wraps around the side surface of the second member 140. . That is, the extruded portion of the first member 130 covers at least a portion of the side surface of the second member 140. In this way, the first member 130 can be prevented from adhering to the side surface 121s3 of the semiconductor structure 121. Thereby, the sheet member 920 can be easily removed from the plurality of light emitting elements 120 by peeling or the like. As a result, damage to the plurality of light emitting elements 120 and the second member 140 when removing the sheet member 920 can be reduced. Moreover, it is preferable that the sheet member 920 has flexibility. Thereby, the sheet member 920 can be easily removed from the plurality of light emitting elements 120.

次に、図６Ｂに示すように、複数の発光装置１２に分離する工程Ｓ１８を行う。具体的には、ダイシングソー等の切削機を用いて、上面視において複数の発光素子１２０の間に位置する第１部材１３０および第２部材１４０を除去する。これにより、発光素子１２０と、第１部材１３０と、第２部材１４０と、を含む複数の発光装置１２が得られる。 Next, as shown in FIG. 6B, step S18 of separating into a plurality of light emitting devices 12 is performed. Specifically, the first member 130 and the second member 140 located between the plurality of light emitting elements 120 when viewed from above are removed using a cutting machine such as a dicing saw. Thereby, a plurality of light emitting devices 12 including the light emitting element 120, the first member 130, and the second member 140 are obtained.

工程Ｓ１８の後、図３に示すように、複数の発光装置１２を配線基板１１上に配置する工程Ｓ２１、樹脂部材１３を形成する工程Ｓ２２、および複数の発光モジュール１０に分離する工程Ｓ２３と、をさらに行ってもよい。以下各工程Ｓ２１～Ｓ２３について詳述する。 After step S18, as shown in FIG. 3, step S21 of arranging the plurality of light emitting devices 12 on the wiring board 11, step S22 of forming the resin member 13, and step S23 of separating into the plurality of light emitting modules 10, You may further do this. Each step S21 to S23 will be explained in detail below.

図７Ａに示すように、複数の発光装置１２を配線基板１１上に配置する工程Ｓ２１では、配線基板１１と各発光素子１２０の第２面１２１ｓ２が対向するように各発光装置１２を配置する。配線基板１１の一の配線と各発光素子１２０のｎ側電極１２４とを導電部材により接続する。また、配線基板１１の他の配線と各発光素子１２０のｐ側電極１２５とを導電部材により接続する。これにより、各発光素子１２０が配線基板１１にフリップチップ実装される。 As shown in FIG. 7A, in step S21 of arranging a plurality of light emitting devices 12 on the wiring board 11, each light emitting device 12 is arranged so that the wiring board 11 and the second surface 121s2 of each light emitting element 120 face each other. One wiring of the wiring board 11 and the n-side electrode 124 of each light emitting element 120 are connected by a conductive member. Further, other wiring on the wiring board 11 and the p-side electrode 125 of each light emitting element 120 are connected using a conductive member. As a result, each light emitting element 120 is flip-chip mounted on the wiring board 11.

なお、図９に示すように、第１部材１３０の側面と、第２部材１４０の側面とに反射部材１５０を形成してもよい。図９は、本実施形態の変形例に係る発光モジュールの製造方法を説明するための断面図である。反射部材１５０は、第１部材１３０及び第２部材１４０からの光を反射させるための部材である。反射部材１５０には、例えば、アルミニウム、ニッケル、チタン、もしくは白金、またはこれらの金属を主成分とする合金等を用いることができる。また、反射部材１５０には、複数の誘電体層を含む誘電体多層膜を用いてもよい。このような反射部材１５０を形成する場合、樹脂部材１３を形成する工程は行わなくてもよい。 Note that, as shown in FIG. 9, a reflective member 150 may be formed on the side surface of the first member 130 and the side surface of the second member 140. FIG. 9 is a cross-sectional view for explaining a method of manufacturing a light emitting module according to a modification of this embodiment. The reflecting member 150 is a member for reflecting light from the first member 130 and the second member 140. The reflective member 150 can be made of, for example, aluminum, nickel, titanium, platinum, or an alloy containing these metals as main components. Moreover, a dielectric multilayer film including a plurality of dielectric layers may be used for the reflective member 150. When forming such a reflective member 150, the step of forming the resin member 13 may not be performed.

次に、図７Ｂに示すように、樹脂部材１３を形成する工程Ｓ２２を行う。具体的には、発光素子１２０の側面１２１ｓ３と、第１部材１３０の側面および下面において発光素子１２０から露出する領域と、第２部材１４０の側面と、を覆う光反射性を有する樹脂部材１３を形成する。例えば、樹脂部材１３を形成する工程Ｓ２２において、第２部材１４０の上面を覆うように樹脂材料を形成した後、樹脂材料の一部を除去し第２部材１４０の上面を樹脂材料から露出させることで樹脂部材１３を形成する。接触させる工程Ｓ１５において、第１部材１３０が発光素子１２０の側面１２１ｓ３に付着することを低減することで、樹脂部材１３を発光素子１２０の側面１２１ｓ３を覆うように形成できる。また、樹脂部材１３は、波長変換物質の焼結体である第２部材１４０だけでなく樹脂部材１３１を含む第１部材１３０にも接続される。そのため、樹脂部材１３と発光装置１２の接合強度を高めることができる。 Next, as shown in FIG. 7B, step S22 of forming the resin member 13 is performed. Specifically, a resin member 13 having light reflectivity is used to cover the side surface 121s3 of the light emitting element 120, the regions exposed from the light emitting element 120 on the side and lower surfaces of the first member 130, and the side surface of the second member 140. Form. For example, in step S22 of forming the resin member 13, a resin material is formed to cover the upper surface of the second member 140, and then a portion of the resin material is removed to expose the upper surface of the second member 140 from the resin material. The resin member 13 is formed. In the contacting step S15, by reducing adhesion of the first member 130 to the side surface 121s3 of the light emitting element 120, the resin member 13 can be formed to cover the side surface 121s3 of the light emitting element 120. Further, the resin member 13 is connected not only to the second member 140 which is a sintered body of a wavelength conversion substance but also to the first member 130 including the resin member 131. Therefore, the bonding strength between the resin member 13 and the light emitting device 12 can be increased.

次に、図７Ｃに示すように、複数の発光モジュールに分離する工程Ｓ２３を行う。具体的には、ダイシングソー等の切削機を用いて、上面視において複数の発光装置１２の間に位置する樹脂部材１３および配線基板１１を除去する。これにより、配線基板１１と、発光装置１２と、樹脂部材１３と、を含む複数の発光モジュール１０が得られる。ただし、工程Ｓ２３を行わずに、図７Ｂに示す配線基板１１と、複数の発光装置１２と、樹脂部材１３とを含むモジュールを発光モジュール１０としてもよい。また、工程Ｓ２１において、配線基板１１ではなく配線が配置されていない支持基板上に複数の発光装置１２を配置し、樹脂部材１３を形成する工程Ｓ２２の後に、この支持基板を複数の発光装置１２から除去してもよい。 Next, as shown in FIG. 7C, a step S23 of separating into a plurality of light emitting modules is performed. Specifically, using a cutting machine such as a dicing saw, the resin member 13 and the wiring board 11 located between the plurality of light emitting devices 12 when viewed from above are removed. Thereby, a plurality of light emitting modules 10 including the wiring board 11, the light emitting device 12, and the resin member 13 are obtained. However, the module including the wiring board 11, the plurality of light emitting devices 12, and the resin member 13 shown in FIG. 7B may be used as the light emitting module 10 without performing step S23. Further, in step S21, a plurality of light emitting devices 12 are arranged on a support substrate on which no wiring is arranged instead of the wiring board 11, and after step S22 of forming a resin member 13, this support substrate is placed on a support substrate on which a plurality of light emitting devices 12 are arranged. It may be removed from

次に、発光モジュール１０の使用例を説明する。
配線基板１１を介して発光素子１２０のｎ側電極１２４とｐ側電極１２５との間に電圧を印加することにより、活性層１２７が発光する。活性層１２７が発する光の大部分は、第２部材１４０に入射する。これにより、第２部材１４０が発光する。本実施形態では、第１部材１３０が波長変換物質１３２を含むため、第１部材１３０の波長変換物質１３２も発光する。 Next, an example of how the light emitting module 10 is used will be described.
By applying a voltage between the n-side electrode 124 and the p-side electrode 125 of the light emitting element 120 via the wiring board 11, the active layer 127 emits light. Most of the light emitted by the active layer 127 is incident on the second member 140. This causes the second member 140 to emit light. In this embodiment, since the first member 130 includes the wavelength converting material 132, the wavelength converting material 132 of the first member 130 also emits light.

次に、本実施形態の効果について説明する。
本実施形態に係る発光装置１２の製造方法は、複数の発光素子１２０を準備する工程Ｓ１１と、複数の発光素子１２０をシート部材９２０に配置する工程Ｓ１２と、第１部材１３０を複数の発光素子１２０の第１面１２１ｓ１に接触させる工程Ｓ１５と、第１部材１３０を硬化する工程Ｓ１６と、シート部材９２０を複数の発光素子１２０から除去する工程Ｓ１７と、を備える。工程Ｓ１では、複数の凹部１２１ａを有する第１面１２１ｓ１と、第１面１２１ｓ１の反対側に位置する第２面１２１ｓ２と、第１面１２１ｓ１と第２面１２１ｓ２とを接続する側面１２１ｓ３と、を有する半導体構造体１２１を含む複数の発光素子１２０を準備する。工程Ｓ１２では、各発光素子１２０の第２面１２１ｓ２と、粘着性を有するシート部材９２０とを対向させて、各発光素子１２０の側面１２１ｓ３がシート部材９２０に覆われるように、複数の発光素子１２０をシート部材９２０に配置する。工程Ｓ１５では、透光性を有する未硬化の樹脂部材１３１を含む第１部材１３０上に、波長変換物質を含み、未硬化の樹脂部材１３１の硬度より高い硬度を有する第２部材１４０が配置された状態で、第１部材１３０が、複数の凹部１２１ａ内に配置され、かつ、シート部材９２０と第２部材１４０との間に配置されるように、第１部材１３０を複数の発光素子１２０の第１面１２１ｓ１に接触させる。 Next, the effects of this embodiment will be explained.
The method for manufacturing the light emitting device 12 according to the present embodiment includes a step S11 of preparing a plurality of light emitting elements 120, a step S12 of arranging the plurality of light emitting elements 120 on a sheet member 920, and a step S12 of preparing a plurality of light emitting elements 120, and a step S12 of disposing a plurality of light emitting elements 120 on a sheet member 920. 120, a step S16 of curing the first member 130, and a step S17 of removing the sheet member 920 from the plurality of light emitting elements 120. In step S1, a first surface 121s1 having a plurality of recesses 121a, a second surface 121s2 located on the opposite side of the first surface 121s1, and a side surface 121s3 connecting the first surface 121s1 and the second surface 121s2 are formed. A plurality of light emitting elements 120 including semiconductor structures 121 having the same structure as shown in FIG. In step S12, the plurality of light emitting elements 120 are arranged such that the second surface 121s2 of each light emitting element 120 faces the adhesive sheet member 920, and the side surface 121s3 of each light emitting element 120 is covered with the sheet member 920. are arranged on the sheet member 920. In step S15, a second member 140 containing a wavelength conversion substance and having a hardness higher than that of the uncured resin member 131 is placed on the first member 130 containing the uncured resin member 131 having translucency. In this state, the first member 130 is placed between the plurality of light emitting elements 120 such that the first member 130 is placed in the plurality of recesses 121a and between the sheet member 920 and the second member 140. It is brought into contact with the first surface 121s1.

このように本実施形態に係る発光装置１２の製造方法においては、発光素子１２０と第２部材１４０との間に、半導体構造体１２１のエピタキシャル成長に用いる基板９１０が配置されておらず、発光素子１２０の半導体構造体１２１と第２部材１４０を第１部材１３０により接続する。そのため、発光装置１２の光の取り出し効率を向上できる。 As described above, in the method for manufacturing the light emitting device 12 according to the present embodiment, the substrate 910 used for epitaxial growth of the semiconductor structure 121 is not disposed between the light emitting element 120 and the second member 140, and the light emitting element 120 The semiconductor structure 121 and the second member 140 are connected by the first member 130. Therefore, the light extraction efficiency of the light emitting device 12 can be improved.

また、第１面１２１ｓ１に複数の凹部１２１ａを配置される。そのため、活性層１２７が発する光が第１面１２１ｓ１において全反射することを低減できる。これにより、活性層１２７が発する光が第２部材１４０に入射し易くなり、発光装置１２の光の取り出し効率を向上できる。 Further, a plurality of recesses 121a are arranged on the first surface 121s1. Therefore, total reflection of the light emitted by the active layer 127 at the first surface 121s1 can be reduced. Thereby, the light emitted by the active layer 127 can easily enter the second member 140, and the light extraction efficiency of the light emitting device 12 can be improved.

また、シート部材９２０により各発光素子１２０の側面１２１ｓ３を覆った状態で、第１部材１３０を複数の発光素子１２０に接触させる。そのため、各発光素子１２０の側面１２１ｓ３に第１部材１３０が付着することを低減できる。これにより、シート部材９２０を容易に除去できる。その結果、シート部材９２０を除去する際に第２部材１４０が破損することを低減し、歩留まりを向上できる。 Further, the first member 130 is brought into contact with the plurality of light emitting elements 120 while the side surface 121s3 of each light emitting element 120 is covered with the sheet member 920. Therefore, attachment of the first member 130 to the side surface 121s3 of each light emitting element 120 can be reduced. Thereby, the sheet member 920 can be easily removed. As a result, damage to the second member 140 when removing the sheet member 920 can be reduced, and yield can be improved.

また、準備する工程Ｓ１１において、表面に複数の凸部９１１を有する基板９１０上に、半導体構造体１２１をエピタキシャル成長させる。接触させる工程Ｓ１５の前に、基板９１０を半導体構造体１２１から除去する工程Ｓ１３をさらに備える。基板９１０を半導体構造体１２１から除去する工程Ｓ１３において、基板９１０から露出された半導体構造体１２１の表面が第１面１２１ｓ１であり、第１面１２１ｓ１の複数の凹部１２１ａの形状は、複数の凸部９１１に対応した形状である。そのため、基板９１０の除去後に、半導体構造体１２１の表面に複数の凹部１２１ａを形成するための加工を行う必要がなく、工程を簡略化することができる。 Further, in the preparation step S11, the semiconductor structure 121 is epitaxially grown on the substrate 910 having a plurality of convex portions 911 on the surface. The method further includes a step S13 of removing the substrate 910 from the semiconductor structure 121 before the contacting step S15. In step S13 of removing the substrate 910 from the semiconductor structure 121, the surface of the semiconductor structure 121 exposed from the substrate 910 is the first surface 121s1, and the shape of the plurality of recesses 121a of the first surface 121s1 is a plurality of convex portions. The shape corresponds to the portion 911. Therefore, after removing the substrate 910, there is no need to perform processing to form a plurality of recesses 121a on the surface of the semiconductor structure 121, and the process can be simplified.

また、第１面１２１ｓ１は、複数の凹部１２１ａの間に位置する領域１２１ｂを含む。接触させる工程Ｓ１５において、第２部材１４０と領域１２１ｂとの間に第１部材１３０が介在するように、第１部材１３０を第１面１２１ｓ１に接触させる。そのため、第１部材１３０を介して発光素子１２０を第２部材１４０に強固に固着できる。 Further, the first surface 121s1 includes a region 121b located between the plurality of recesses 121a. In the contacting step S15, the first member 130 is brought into contact with the first surface 121s1 so that the first member 130 is interposed between the second member 140 and the region 121b. Therefore, the light emitting element 120 can be firmly fixed to the second member 140 via the first member 130.

また、第２部材１４０は、波長変換物質の焼結体である。そのため、第２部材１４０が樹脂部材と、樹脂部材中に配置される波長変換物質と、により構成される場合と比較して、第２部材１４０の硬度を高くできる。これにより、接触させる工程Ｓ１５やシート部材９２０を複数の発光素子１２０から除去する工程Ｓ１７において第２部材１４０が変形することを低減できる。 Further, the second member 140 is a sintered body of a wavelength conversion material. Therefore, the hardness of the second member 140 can be increased compared to the case where the second member 140 is composed of a resin member and a wavelength conversion substance disposed in the resin member. This can reduce deformation of the second member 140 in the contacting step S15 and the step S17 of removing the sheet member 920 from the plurality of light emitting elements 120.

また、接触させる工程Ｓ１５において、第１部材１３０を加熱した状態で第１面１２１ｓ１に接触させる。これにより、第１部材１３０の流動性を高め、第１部材１３０を半導体構造体１２１の各凹部１２１ａ内に配置し易くなる。 Further, in the contacting step S15, the first member 130 is brought into contact with the first surface 121s1 in a heated state. This increases the fluidity of the first member 130 and makes it easier to arrange the first member 130 in each recess 121a of the semiconductor structure 121.

また、第１部材１３０は、波長変換物質１３２を含む。これにより、第２部材１４０のみに波長変換物質が含まれている場合と比較して、波長変換物質による光変換効率を向上できる。 Further, the first member 130 includes a wavelength conversion material 132. Thereby, compared to the case where only the second member 140 contains the wavelength conversion substance, the light conversion efficiency by the wavelength conversion substance can be improved.

また、第１部材１３０を硬化する工程Ｓ１６の後に、上面視において複数の発光素子１２０の間に位置する第１部材１３０および第２部材１４０を除去することで複数の発光装置１２に分離する工程Ｓ１８をさらに備える。このように、複数の発光素子１２０を第１部材１３０を介して第２部材１４０に接続した後に、複数の発光装置１２に分離することで、発光装置１２を歩留まり良く製造することができる。 Further, after the step S16 of curing the first member 130, a step of separating into a plurality of light emitting devices 12 by removing the first member 130 and the second member 140 located between the plurality of light emitting elements 120 in a top view It further includes S18. In this way, by connecting the plurality of light emitting elements 120 to the second member 140 via the first member 130 and then separating them into the plurality of light emitting devices 12, the light emitting devices 12 can be manufactured with a high yield.

また、複数の発光装置１２に分離する工程Ｓ１８の後に、発光素子１２０の側面１２１ｓ３、第１部材１３０の側面、および第２部材１４０の側面を覆う光反射性を有する樹脂部材１３を形成する工程Ｓ１９をさらに備える。そのため、各発光素子１２０の側面１２１ｓ３に向かう光は、樹脂部材１３によって反射され、第２部材１４０に向かう。これにより、発光装置１２の光の取り出し効率を向上できる。また、樹脂部材１３は、波長変換物質の焼結体である第２部材１４０だけでなく樹脂部材１３１を含む第１部材１３０にも接続される。そのため、樹脂部材１３と発光装置１２との接合強度を高めることができる。 Further, after the step S18 of separating into a plurality of light emitting devices 12, a step of forming a resin member 13 having light reflectivity that covers the side surface 121s3 of the light emitting element 120, the side surface of the first member 130, and the side surface of the second member 140. It further includes S19. Therefore, the light directed toward the side surface 121s3 of each light emitting element 120 is reflected by the resin member 13 and directed toward the second member 140. Thereby, the light extraction efficiency of the light emitting device 12 can be improved. Further, the resin member 13 is connected not only to the second member 140 which is a sintered body of a wavelength conversion substance but also to the first member 130 including the resin member 131. Therefore, the bonding strength between the resin member 13 and the light emitting device 12 can be increased.

また、接触させる工程Ｓ１５において、第１部材１３０を第２部材１４０の側面に接触させる。具体的には、接触させる工程Ｓ１５においては、発光素子１２０の側面１２１ｓ３がシート部材９２０によって覆われた状態で第２部材１４０を複数の発光素子１２０に接触させる。これにより、第１部材１３０を複数の凹部１２１ａ内に配置しつつ、発光素子１２０と第２部材１４０の間から第１部材１３０の一部が第２部材１４０の側面に接触するように押し出される。これにより、押し出された第１部材１３０の一部が、発光素子１２０の側面１２１ｓ３に付着することを低減しつつ、第１部材１３０と第２部材１４０との接合強度を高めることができる。 Further, in the contacting step S15, the first member 130 is brought into contact with the side surface of the second member 140. Specifically, in the contacting step S15, the second member 140 is brought into contact with the plurality of light emitting elements 120 while the side surface 121s3 of the light emitting element 120 is covered with the sheet member 920. As a result, a part of the first member 130 is pushed out from between the light emitting element 120 and the second member 140 so as to come into contact with the side surface of the second member 140 while the first member 130 is placed in the plurality of recesses 121a. . Thereby, the bonding strength between the first member 130 and the second member 140 can be increased while reducing the adhesion of a part of the extruded first member 130 to the side surface 121s3 of the light emitting element 120.

＜第２の実施形態＞
次に、第２の実施形態について説明する。
図１０は、本実施形態に係る発光モジュール２０を示す断面図である。
なお、以下の説明においては、原則として、第１の実施形態との相違点のみを説明する。以下に説明する事項以外は、第１の実施形態と同様である。 <Second embodiment>
Next, a second embodiment will be described.
FIG. 10 is a sectional view showing the light emitting module 20 according to this embodiment.
Note that in the following description, in principle, only the differences from the first embodiment will be described. Other than the matters described below, this embodiment is the same as the first embodiment.

本実施形態に係る発光モジュール２０は、発光装置２２における第２部材１４０が、第１面１２１ｓ１において複数の凹部１２１ａの間の領域１２１ｂに接する点で、第１の実施形態に係る発光装置１２と相違する。このような発光装置２２は、第１の実施形態における接触させる工程Ｓ１５において、第２部材１４０を第１面１２１ｓ１に接するまで複数の発光素子１２０に接近させることで得ることができる。 The light emitting module 20 according to the present embodiment is different from the light emitting device 12 according to the first embodiment in that the second member 140 of the light emitting device 22 contacts the region 121b between the plurality of recesses 121a on the first surface 121s1. differ. Such a light emitting device 22 can be obtained by bringing the second member 140 close to the plurality of light emitting elements 120 until it contacts the first surface 121s1 in the contacting step S15 in the first embodiment.

次に、本実施形態の効果を説明する。
第１面１２１ｓ１は、複数の凹部１２１ａの間に位置する領域１２１ｂを含み、接触させる工程Ｓ１５において、第２部材１４０が領域１２１ｂに接するように、第１部材１３０を第１面１２１ｓ１に接触させる。そのため、Ｘ－Ｙ平面上の位置によって第２部材１４０と発光素子１２０との距離がばらつくことを低減できる。また、第２部材１４０が領域１２１ｂに接することで、第２部材１４０と領域１２１ｂとの間に第１部材１３０が配置されている場合と比較して、第２部材１４０から半導体構造体１２１への放熱経路を確保し、放熱性を向上することができる。 Next, the effects of this embodiment will be explained.
The first surface 121s1 includes a region 121b located between the plurality of recesses 121a, and in the contacting step S15, the first member 130 is brought into contact with the first surface 121s1 so that the second member 140 is in contact with the region 121b. . Therefore, it is possible to reduce variations in the distance between the second member 140 and the light emitting element 120 depending on the position on the XY plane. Furthermore, since the second member 140 is in contact with the region 121b, the distance from the second member 140 to the semiconductor structure 121 is greater than in the case where the first member 130 is disposed between the second member 140 and the region 121b. It is possible to secure a heat dissipation path and improve heat dissipation performance.

実施形態は、以下の態様を含む。 Embodiments include the following aspects.

（付記１）
複数の凹部を有する第１面と、前記第１面の反対側に位置する第２面と、前記第１面と前記第２面とを接続する側面と、を有する半導体構造体を含む複数の発光素子を準備する工程と、
各前記発光素子の前記第２面と、粘着性を有するシート部材とを対向させて、各前記発光素子の前記側面が前記シート部材に覆われるように、前記複数の発光素子を前記シート部材に配置する工程と、
透光性を有する未硬化の樹脂部材を含む第１部材上に、波長変換物質を含み、未硬化の前記樹脂部材の硬度より高い硬度を有する第２部材が配置された状態で、前記第１部材が、前記複数の凹部内に配置され、かつ、前記シート部材と前記第２部材との間に配置されるように、前記第１部材を前記複数の発光素子の前記第１面に接触させる工程と、
前記第１部材を硬化する工程と、
前記シート部材を前記複数の発光素子から除去する工程と、
を備える、発光装置の製造方法。 (Additional note 1)
A plurality of semiconductor structures including a first surface having a plurality of recesses, a second surface located on the opposite side of the first surface, and a side surface connecting the first surface and the second surface. a step of preparing a light emitting element;
The plurality of light emitting elements are attached to the sheet member such that the second surface of each light emitting element faces the adhesive sheet member, and the side surface of each light emitting element is covered with the sheet member. The process of placing
A second member containing a wavelength conversion substance and having a hardness higher than that of the uncured resin member is disposed on the first member including an uncured resin member having translucency, and the first member Bringing the first member into contact with the first surface of the plurality of light emitting elements such that the member is disposed within the plurality of recesses and between the sheet member and the second member. process and
curing the first member;
removing the sheet member from the plurality of light emitting elements;
A method for manufacturing a light emitting device, comprising:

（付記２）
前記準備する工程において、表面に複数の凸部を有する基板上に、前記半導体構造体をエピタキシャル成長させ、
前記接触させる工程の前に、前記基板を前記半導体構造体から除去する工程をさらに備え、
前記基板を前記半導体構造体から除去する工程において、前記基板から露出された前記半導体構造体の表面が前記第１面であり、前記第１面の前記複数の凹部の形状は、前記複数の凸部に対応した形状である、付記１に記載の発光装置の製造方法。 (Additional note 2)
In the preparing step, epitaxially growing the semiconductor structure on a substrate having a plurality of convex portions on the surface;
Further comprising the step of removing the substrate from the semiconductor structure before the contacting step,
In the step of removing the substrate from the semiconductor structure, the surface of the semiconductor structure exposed from the substrate is the first surface, and the shape of the plurality of recesses on the first surface is the same as the shape of the plurality of convexities. The method for manufacturing the light emitting device according to Supplementary Note 1, wherein the light emitting device has a shape corresponding to the part.

（付記３）
前記第１面は、前記複数の凹部の間に位置する領域を含み、
前記接触させる工程において、前記第２部材と前記領域との間に前記第１部材が介在するように、前記第１部材を前記第１面に接触させる、付記１または２に記載の発光装置の製造方法。 (Additional note 3)
The first surface includes a region located between the plurality of recesses,
In the light emitting device according to Supplementary Note 1 or 2, in the contacting step, the first member is brought into contact with the first surface such that the first member is interposed between the second member and the region. Production method.

（付記４）
前記第１面は、前記複数の凹部の間に位置する領域を含み、
前記接触させる工程において、前記第２部材が前記領域に接するように、前記第１部材を前記第１面に接触させる、付記１または２に記載の発光装置の製造方法。 (Additional note 4)
The first surface includes a region located between the plurality of recesses,
The method for manufacturing a light emitting device according to appendix 1 or 2, wherein in the contacting step, the first member is brought into contact with the first surface so that the second member comes into contact with the region.

（付記５）
前記第２部材は、前記波長変換物質の焼結体である、付記１～４のいずれか１つに記載の発光装置の製造方法。 (Appendix 5)
The method for manufacturing a light emitting device according to any one of appendices 1 to 4, wherein the second member is a sintered body of the wavelength conversion substance.

（付記６）
前記接触させる工程において、前記第１部材を加熱した状態で前記第１面に押し付けて接触させる、付記１～５のいずれか１つに記載の発光装置の製造方法。 (Appendix 6)
The method for manufacturing a light emitting device according to any one of appendices 1 to 5, wherein in the contacting step, the first member is pressed against the first surface in a heated state and brought into contact.

（付記７）
前記第１部材は、波長変換物質を含む、付記１～６のいずれか１つに記載の発光装置の製造方法。 (Appendix 7)
The method for manufacturing a light emitting device according to any one of Supplementary Notes 1 to 6, wherein the first member includes a wavelength conversion substance.

（付記８）
前記第１部材を硬化する工程の後に、
上面視において前記複数の発光素子の間に位置する前記第１部材および前記第２部材を除去することで複数の発光装置に分離する工程をさらに備える、付記１～７のいずれか１つに記載の発光装置の製造方法。 (Appendix 8)
After the step of curing the first member,
According to any one of Supplementary Notes 1 to 7, further comprising the step of separating the first member and the second member located between the plurality of light emitting elements in a top view into a plurality of light emitting devices. A method for manufacturing a light emitting device.

（付記９）
前記複数の発光装置に分離する工程の後に、
前記発光素子の前記側面、前記第１部材の側面、および前記第２部材の側面を覆う光反射性を有する樹脂部材を形成する工程をさらに備える、付記８に記載の発光装置の製造方法。 (Appendix 9)
After the step of separating into the plurality of light emitting devices,
The method for manufacturing a light emitting device according to appendix 8, further comprising the step of forming a resin member having light reflectivity that covers the side surface of the light emitting element, the side surface of the first member, and the side surface of the second member.

（付記１０）
前記接触させる工程において、前記第１部材を前記第２部材の側面に接触させる、付記１～９のいずれか１つに記載の発光装置の製造方法。 (Appendix 10)
The method for manufacturing a light emitting device according to any one of Supplementary Notes 1 to 9, wherein in the contacting step, the first member is brought into contact with a side surface of the second member.

１０、２０ ：発光モジュール
１１ ：配線基板
１２、２２ ：発光装置
１３ ：樹脂部材
１２０ ：発光素子
１２１ ：半導体構造体
１２１ａ ：凹部
１２１ｂ ：領域
１２１ｓ１ ：第１面
１２１ｓ２ ：第２面
１２１ｓ３ ：側面
１２２ ：光反射性電極
１２３ ：絶縁膜
１２３ａ、１２３ｂ：貫通穴
１２４ ：ｎ側電極
１２５ ：ｐ側電極
１２６ ：ｎ側半導体層
１２６ａ ：外周領域
１２６ｂ ：被覆領域
１２６ｃ ：コンタクト領域
１２７ ：活性層
１２８ ：ｐ側半導体層
１３０ ：第１部材
１３１ ：樹脂部材
１３２ ：波長変換物質
１４０ ：第２部材
１４１ ：上面
１４２ ：下面
１５０ ：反射部材
９１０ ：基板
９１１ ：凸部
９１２ ：領域
９２０ ：シート部材
９３０ ：支持基板
Ｌ１ ：深さ
Ｌ２ ：直径
 10, 20: Light emitting module 11: Wiring board 12, 22: Light emitting device 13: Resin member 120: Light emitting element 121: Semiconductor structure 121a: Recess 121b: Region 121s1: First surface 121s2: Second surface 121s3: Side surface 122: Light reflective electrode 123: Insulating films 123a, 123b: Through hole 124: N-side electrode 125: P-side electrode 126: N-side semiconductor layer 126a: Peripheral region 126b: Covering region 126c: Contact region 127: Active layer 128: P-side Semiconductor layer 130: First member 131: Resin member 132: Wavelength conversion substance 140: Second member 141: Upper surface 142: Lower surface 150: Reflective member 910: Substrate 911: Convex portion 912: Region 920: Sheet member 930: Support substrate L1 :Depth L2 :Diameter

Claims (9)

基板上に位置し、複数の凹部を有する第１面と、前記第１面の反対側に位置する第２面と、前記第１面と前記第２面とを接続する側面と、を有する半導体構造体を含み、相互に離隔した複数の発光素子を準備する工程と、
前記複数の発光素子を準備する工程の後で、各前記発光素子の前記第２面と、粘着性を有するシート部材とを対向させて、各前記発光素子の前記側面が前記シート部材に覆われるように、前記複数の発光素子を前記シート部材に配置する工程と、
前記複数の発光素子を前記シート部材に配置する工程の後で、前記基板を前記半導体構造体から除去する工程と、
透光性を有する未硬化の樹脂部材を含む第１部材上に、波長変換物質を含み、前記波長変換物質の焼結体であり、未硬化の前記樹脂部材の硬度より高い硬度を有する第２部材が配置された状態で、前記第１部材が、前記複数の凹部内に配置され、かつ、前記シート部材と前記第２部材との間に配置されるように、前記第１部材を前記複数の発光素子の前記第１面に接触させる工程と、
前記第１部材を硬化する工程と、
前記シート部材を前記複数の発光素子から除去する工程と、
を備え、
前記複数の発光素子を前記シート部材に配置する工程において、前記シート部材は、前記複数の発光素子間において前記基板に接する、発光装置の製造方法。 A semiconductor having a first surface located on a substrate and having a plurality of recesses, a second surface located on the opposite side of the first surface, and a side surface connecting the first surface and the second surface. preparing a plurality of mutually spaced light emitting elements including a structure;
After the step of preparing the plurality of light emitting elements, the second surface of each light emitting element and a sheet member having adhesiveness are opposed to each other, and the side surface of each light emitting element is covered with the sheet member. , arranging the plurality of light emitting elements on the sheet member;
After the step of arranging the plurality of light emitting elements on the sheet member, removing the substrate from the semiconductor structure;
A second member containing a wavelength converting substance, which is a sintered body of the wavelength converting substance and has a hardness higher than the hardness of the uncured resin member, is placed on a first member including an uncured resin member having translucency. In the state where the members are arranged, the first member is placed in the plurality of recesses and between the sheet member and the second member. contacting the first surface of the light emitting element;
curing the first member;
removing the sheet member from the plurality of light emitting elements;
Equipped with
In the step of arranging the plurality of light emitting elements on the sheet member, the sheet member is in contact with the substrate between the plurality of light emitting elements. 前記準備する工程において、表面に複数の凸部を有する前記基板上に、前記半導体構造体をエピタキシャル成長させ、
前記基板を前記半導体構造体から除去する工程において、前記基板から露出された前記半導体構造体の表面が前記第１面であり、前記第１面の前記複数の凹部の形状は、前記複数の凸部に対応した形状である、請求項１に記載の発光装置の製造方法。 In the preparing step, epitaxially growing the semiconductor structure on the substrate having a plurality of convex portions on the surface;
In the step of removing the substrate from the semiconductor structure, the surface of the semiconductor structure exposed from the substrate is the first surface, and the shape of the plurality of recesses on the first surface is the same as the shape of the plurality of convexities. The method for manufacturing a light emitting device according to claim 1, wherein the light emitting device has a shape corresponding to the portion. 前記第１面は、前記複数の凹部の間に位置する領域を含み、
前記接触させる工程において、前記第２部材と前記領域との間に前記第１部材が介在するように、前記第１部材を前記第１面に接触させる、請求項１または２に記載の発光装置の製造方法。 The first surface includes a region located between the plurality of recesses,
The light emitting device according to claim 1 or 2, wherein in the contacting step, the first member is brought into contact with the first surface such that the first member is interposed between the second member and the region. manufacturing method. 前記第１面は、前記複数の凹部の間に位置する領域を含み、
前記接触させる工程において、前記第２部材が前記領域に接するように、前記第１部材を前記第１面に接触させる、請求項１または２に記載の発光装置の製造方法。 The first surface includes a region located between the plurality of recesses,
3. The method for manufacturing a light emitting device according to claim 1, wherein in the contacting step, the first member is brought into contact with the first surface so that the second member comes into contact with the region. 前記接触させる工程において、前記第１部材を加熱した状態で前記第１面に押し付けて接触させる、請求項１または２に記載の発光装置の製造方法。 3. The method for manufacturing a light emitting device according to claim 1, wherein in the contacting step, the first member is heated and pressed against the first surface. 前記第１部材は、波長変換物質を含む、請求項１または２に記載の発光装置の製造方法。 The method for manufacturing a light emitting device according to claim 1 or 2, wherein the first member includes a wavelength conversion substance. 前記第１部材を硬化する工程の後に、
上面視において前記複数の発光素子の間に位置する前記第１部材および前記第２部材を除去することで複数の発光装置に分離する工程をさらに備える、請求項１または２に記載の発光装置の製造方法。 After the step of curing the first member,
3. The light emitting device according to claim 1, further comprising the step of separating the plurality of light emitting devices by removing the first member and the second member located between the plurality of light emitting elements in a top view. Production method. 前記複数の発光装置に分離する工程の後に、
前記発光素子の前記側面、前記第１部材の側面、および前記第２部材の側面を覆う光反射性を有する樹脂部材を形成する工程をさらに備える、請求項７に記載の発光装置の製造方法。 After the step of separating into the plurality of light emitting devices,
8. The method for manufacturing a light emitting device according to claim 7 , further comprising the step of forming a resin member having light reflectivity that covers the side surface of the light emitting element, the side surface of the first member, and the side surface of the second member. 前記接触させる工程において、前記第１部材を前記第２部材の側面に接触させる、請求項１または２に記載の発光装置の製造方法。 The method for manufacturing a light emitting device according to claim 1 or 2, wherein in the contacting step, the first member is brought into contact with a side surface of the second member.
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