JP7421318B2 - 液体材料気化装置、液体材料気化装置の制御方法、及び、液体材料気化装置用プログラム - Google Patents
液体材料気化装置、液体材料気化装置の制御方法、及び、液体材料気化装置用プログラム Download PDFInfo
- Publication number
- JP7421318B2 JP7421318B2 JP2019214198A JP2019214198A JP7421318B2 JP 7421318 B2 JP7421318 B2 JP 7421318B2 JP 2019214198 A JP2019214198 A JP 2019214198A JP 2019214198 A JP2019214198 A JP 2019214198A JP 7421318 B2 JP7421318 B2 JP 7421318B2
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- control valve
- liquid material
- measured
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011344 liquid material Substances 0.000 title claims description 173
- 230000008016 vaporization Effects 0.000 title claims description 74
- 238000009834 vaporization Methods 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims description 120
- 239000012530 fluid Substances 0.000 claims description 29
- 238000004364 calculation method Methods 0.000 claims description 24
- 238000011144 upstream manufacturing Methods 0.000 claims description 12
- 239000006200 vaporizer Substances 0.000 claims description 11
- 239000011364 vaporized material Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 90
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
- Flow Control (AREA)
Description
100・・・液体材料気化装置
1 ・・・制御バルブ
2 ・・・流量センサ
3 ・・・圧力センサ
4 ・・・バルブ制御部
41 ・・・第1操作量算出部
42 ・・・第2操作量算出部
43 ・・・操作量決定部
44 ・・・設定流量決定部
45 ・・・流量制御部
Claims (16)
- 液体材料、又は、液体材料が気化した材料ガスである材料流体が流れる流路に設けられた制御バルブと、
前記制御バルブよりも下流側に設けられた圧力センサと、
材料流体の流量を測定する流量センサと、
設定圧力と前記圧力センサで測定される測定圧力との偏差を小さくしつつ、前記流量センサで測定される測定流量が液体材料の気化できる上限流量に基づいて設定された流量である制限流量以下となるように前記制御バルブを制御するバルブ制御器と、を備え、
前記バルブ制御器が、
(a)
測定流量と制限流量の偏差に基づいて、前記制御バルブの操作量である第1操作量を算出する第1操作量算出部と、
測定圧力と設定圧力の偏差に基づいて、前記制御バルブの操作量である第2操作量を算出する第2操作量算出部と、
第1操作量と第2操作量を比較して、いずれか一方の操作量を前記制御バルブに入力する操作量決定部とを備えた、又は
(b)
測定流量と設定流量の偏差に基づいて、前記制御バルブを制御する流量制御部と、
測定圧力と設定圧力の偏差が小さくなるように、制限流量以下の設定流量を前記流量制御部に設定する流量設定部とを備えた、液体材料気化装置。 - 前記制御バルブが、電圧が印加されていない状態で全開状態となるノーマルオープンタイプのバルブであり、
前記操作量決定部が、第1操作量と第2操作量のうち大きいほうの操作量を前記制御バルブに入力する請求項1記載の液体材料気化装置。 - 前記制御バルブが、電圧が印加されていない状態で全閉状態となるノーマルクローズタイプのバルブであり、
前記操作量決定部が、第1操作量と第2操作量のうち小さいほうの操作量を前記制御バルブに入力する請求項1記載の液体材料気化装置。 - 前記流量設定部が、測定圧力が設定圧力よりも大きい場合には設定流量を小さくする方向に変更し、測定圧力が設定圧力よりも小さい場合には設定流量を大きくする方向に変更する請求項1記載の液体材料気化装置。
- 前記制御バルブの上流側には液体材料が流れ、前記制御バルブの下流側では液体材料が気化した材料ガスが流れるように構成されており、
前記流量センサが、前記制御バルブの上流側に設けられ、液体材料の流量を測定する請求項1乃至4いずれかに記載の液体材料気化装置。 - 前記制御バルブの上流側には液体材料が流れ、前記制御バルブの下流側では液体材料が気化した材料ガスが流れるように構成されており、
前記流量センサが、前記制御バルブの下流側に設けられ、材料ガスの流量を測定する請求項1乃至4いずれかに記載の液体材料気化装置。 - タンク内に収容された液体材料が加熱器によって加熱され、気化した材料ガスが前記タンク内から前記流路に導出されるように構成されており、
前記流量センサが、前記制御バルブの上流側に設けられ、材料ガスの流量を測定する請求項1乃至4いずれかに記載の液体材料気化装置。 - 前記流路が、メイン流路と、前記メイン流路の下流側から分岐する複数の分岐流路とからなり、各分岐流路がそれぞれ別々に材料ガスの供給対象に接続される請求項1乃至7いずれかに記載の液体材料気化装置。
- 前記制御バルブが、各分岐流路にそれぞれ設けられた請求項8記載の液体材料気化装置。
- 前記流路に設けられたノズルをさらに備えた請求項1乃至9いずれかに記載の液体材料気化装置。
- 前記制御バルブの下流側に設けられたバッファタンクをさらに備えた請求項1乃至10いずれかに記載の液体材料気化装置。
- 前記制御バルブの下流側が気体状態の材料流体の供給対象が接続されており、
前記制御バルブを通過した材料流体がすべて供給対象に流入するように構成されている請求項1乃至11いずれかに記載の液体材料気化装置。 - 液体材料、又は、液体材料が気化した材料ガスである材料流体が流れる流路に設けられた制御バルブと、
前記制御バルブよりも下流側に設けられた圧力センサと、
材料流体の流量を測定する流量センサと、
設定圧力と前記圧力センサで測定される測定圧力との偏差を小さくしつつ、前記流量センサで測定される測定流量が液体材料の気化できる上限流量に基づいて設定された流量である制限流量以下となるように前記制御バルブを制御するバルブ制御器と、
前記制御バルブの下流側に設けられたバッファタンクとを備えた液体材料気化装置。 - 液体材料、又は、液体材料が気化した材料ガスである材料流体が流れる流路に設けられた制御バルブと、
前記制御バルブよりも下流側に設けられた圧力センサと、
材料流体の流量を測定する流量センサと、
設定圧力と前記圧力センサで測定される測定圧力との偏差を小さくしつつ、前記流量センサで測定される測定流量が液体材料の気化できる上限流量に基づいて設定された流量である制限流量以下となるように前記制御バルブを制御するバルブ制御器と、を備え、
前記制御バルブの上流側には液体材料が流れ、前記制御バルブの下流側では液体材料が気化した材料ガスが流れるように構成されており、
前記流量センサが、(a)前記制御バルブの上流側に設けられ、液体材料の流量を測定する、又は(b)前記制御バルブの下流側に設けられ、材料ガスの流量を測定する液体材料気化装置。 - 液体材料、又は、液体材料が気化した材料ガスである材料流体が流れる流路に設けられた制御バルブと、前記制御バルブよりも下流側に設けられた圧力センサと、材料流体の流量を測定する流量センサと、を備えた液体材料気化装置の制御方法であって、
設定圧力と前記圧力センサで測定される測定圧力との偏差を小さくしつつ、前記流量センサで測定される測定流量が液体材料の気化できる上限流量に基づいて設定された流量である制限流量以下となるように前記制御バルブを制御し、
(a)測定流量と制限流量の偏差に基づいて前記制御バルブの操作量である第1操作量を算出し、測定圧力と設定圧力の偏差に基づいて前記制御バルブの操作量である第2操作量を算出し、第1操作量と第2操作量を比較して、いずれか一方の操作量を前記制御バルブに入力すること、又は
(b)測定流量と設定流量の偏差に基づいて前記制御バルブを制御し、測定圧力と設定圧力の偏差が小さくなるように制限流量以下の設定流量を設定することを特徴とする液体材料気化装置の制御方法。 - 液体材料、液体材料が気化した材料ガスである材料流体が流れる流路に設けられた制御バルブと、前記制御バルブよりも下流側に設けられた圧力センサと、材料流体の流量を測定する流量センサと、を備えた液体材料気化装置に用いられるプログラムであって、
設定圧力と前記圧力センサで測定される測定圧力との偏差を小さくしつつ、前記流量センサで測定される測定流量が液体材料の気化できる上限流量に基づいて設定された流量である制限流量以下となるように前記制御バルブを制御するバルブ制御器としての機能をコンピュータに発揮させ、さらに
(a)
測定流量と制限流量の偏差に基づいて、前記制御バルブの操作量である第1操作量を算出する第1操作量算出部と、
測定圧力と設定圧力の偏差に基づいて、前記制御バルブの操作量である第2操作量を算出する第2操作量算出部と、
第1操作量と第2操作量を比較して、いずれか一方の操作量を前記制御バルブに入力する操作量決定部としての機能、又は
(b)
測定流量と設定流量の偏差に基づいて、前記制御バルブを制御する流量制御部と、
測定圧力と設定圧力の偏差が小さくなるように、制限流量以下の設定流量を前記流量制御部に設定する流量設定部としての機能をコンピュータに発揮させることを特徴とする液体材料気化装置用プログラム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019214198A JP7421318B2 (ja) | 2019-11-27 | 2019-11-27 | 液体材料気化装置、液体材料気化装置の制御方法、及び、液体材料気化装置用プログラム |
US17/105,361 US20210156027A1 (en) | 2019-11-27 | 2020-11-25 | Liquid source vaporization apparatus, control method for a liquid source vaporization apparatus and program recording medium on which is recorded a program for a liquid source vaporization apparatus |
KR1020200161045A KR20210065877A (ko) | 2019-11-27 | 2020-11-26 | 액체 재료 기화 장치, 액체 재료 기화 장치의 제어 방법, 및, 액체 재료 기화 장치용 프로그램이 기록된 프로그램 기록 매체 |
CN202011361749.0A CN112864049A (zh) | 2019-11-27 | 2020-11-27 | 液体材料气化装置及其控制方法和程序存储介质 |
TW109141853A TW202120737A (zh) | 2019-11-27 | 2020-11-27 | 液體材料汽化裝置及其控制方法和程式儲存媒體 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019214198A JP7421318B2 (ja) | 2019-11-27 | 2019-11-27 | 液体材料気化装置、液体材料気化装置の制御方法、及び、液体材料気化装置用プログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021086358A JP2021086358A (ja) | 2021-06-03 |
JP7421318B2 true JP7421318B2 (ja) | 2024-01-24 |
Family
ID=75973819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019214198A Active JP7421318B2 (ja) | 2019-11-27 | 2019-11-27 | 液体材料気化装置、液体材料気化装置の制御方法、及び、液体材料気化装置用プログラム |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210156027A1 (ja) |
JP (1) | JP7421318B2 (ja) |
KR (1) | KR20210065877A (ja) |
CN (1) | CN112864049A (ja) |
TW (1) | TW202120737A (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050181129A1 (en) | 2003-02-19 | 2005-08-18 | Olander W. K. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5350824Y2 (ja) | 1973-09-06 | 1978-12-05 | ||
US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
JP4317275B2 (ja) * | 1997-08-21 | 2009-08-19 | キヤノンアネルバ株式会社 | 窒化チタン薄膜の作製方法及びcvd装置 |
US6080446A (en) * | 1997-08-21 | 2000-06-27 | Anelva Corporation | Method of depositing titanium nitride thin film and CVD deposition apparatus |
US9725805B2 (en) * | 2003-06-27 | 2017-08-08 | Spts Technologies Limited | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
US20050120805A1 (en) * | 2003-12-04 | 2005-06-09 | John Lane | Method and apparatus for substrate temperature control |
JP2005307233A (ja) * | 2004-04-19 | 2005-11-04 | Tokyo Electron Ltd | 成膜装置及び成膜方法及びプロセスガスの供給方法 |
JP5652960B2 (ja) * | 2011-08-01 | 2015-01-14 | 株式会社フジキン | 原料気化供給装置 |
US8997784B2 (en) * | 2012-11-14 | 2015-04-07 | Shenzhen Mindray Bio-Medical Electronics Co. Ltd. | Electronic fluid flow controls with integrated manual fluid flow controls |
JP5548292B1 (ja) * | 2013-05-30 | 2014-07-16 | 株式会社堀場エステック | 加熱気化システムおよび加熱気化方法 |
EP2952834A1 (en) * | 2014-06-04 | 2015-12-09 | Danfoss A/S | Electronic expansion valve and methods for calibrating an electronic expansion valve |
US10138555B2 (en) * | 2015-10-13 | 2018-11-27 | Horiba Stec, Co., Ltd. | Gas control system and program for gas control system |
-
2019
- 2019-11-27 JP JP2019214198A patent/JP7421318B2/ja active Active
-
2020
- 2020-11-25 US US17/105,361 patent/US20210156027A1/en active Pending
- 2020-11-26 KR KR1020200161045A patent/KR20210065877A/ko active Search and Examination
- 2020-11-27 CN CN202011361749.0A patent/CN112864049A/zh active Pending
- 2020-11-27 TW TW109141853A patent/TW202120737A/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050181129A1 (en) | 2003-02-19 | 2005-08-18 | Olander W. K. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
Also Published As
Publication number | Publication date |
---|---|
US20210156027A1 (en) | 2021-05-27 |
TW202120737A (zh) | 2021-06-01 |
KR20210065877A (ko) | 2021-06-04 |
JP2021086358A (ja) | 2021-06-03 |
CN112864049A (zh) | 2021-05-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5174805B2 (ja) | キャリアガス及び液体混合物を導入、注入または供給するための装置並びに上記装置を使用するための方法 | |
TWI754728B (zh) | 氣體控制系統、成膜裝置、存儲介質和氣體控制方法 | |
JP6868951B2 (ja) | 蒸気供給のためのシステムおよび方法 | |
TW202135206A (zh) | 用於穩定壓力之反應器系統以及方法 | |
US9556518B2 (en) | Raw material gas supply apparatus for semiconductor manufacturing equipment | |
TWI430065B (zh) | 包括流量比控制器之使用反對稱最佳控制的氣體傳送方法及系統 | |
TWI737630B (zh) | 原子層沉積用之動態前驅物注入 | |
US8202367B2 (en) | Atomic layer growing apparatus | |
JP5350824B2 (ja) | 液体材料の気化供給システム | |
CN109913853B (zh) | 基板处理方法、存储介质以及原料气体供给装置 | |
US10705545B2 (en) | Fluid control device and flow rate ratio control device | |
TWI778095B (zh) | 流體控制裝置、控制系統、控制方法和程式存儲介質 | |
US9605346B2 (en) | Systems and methods for pressure-based liquid flow control | |
KR20200099086A (ko) | 기화 장치, 성막 장치, 농도 제어 기구용 프로그램, 및 농도 제어 방법 | |
JP2021019202A (ja) | 中間チャンバーを備える半導体気相エッチング装置 | |
JP7421318B2 (ja) | 液体材料気化装置、液体材料気化装置の制御方法、及び、液体材料気化装置用プログラム | |
JP2009215635A (ja) | 原料供給装置 | |
JP2008248395A (ja) | プラズマ処理装置およびプラズマ処理装置の調圧方法 | |
KR20070006460A (ko) | 가스 공급 라인 | |
US10283391B2 (en) | Multiple gases providing method and multiple gases providing apparatus | |
KR20200066909A (ko) | 가스공급장치 ? 가스공급제어방법 | |
JP2022170043A (ja) | ガス供給システムおよびガス供給方法 | |
JP2023067758A (ja) | 気化装置、気化装置の制御方法、気化装置用プログラム、及び、流体制御装置 | |
US20050026460A1 (en) | Optimized temperature controller for cold mass introduction | |
JP5398680B2 (ja) | 熱源装置、熱媒体利用システム及び熱源装置の制御方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221017 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230831 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231018 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231228 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240112 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7421318 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |