JP7419703B2 - 誘電体組成物および電子部品 - Google Patents
誘電体組成物および電子部品 Download PDFInfo
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- JP7419703B2 JP7419703B2 JP2019154777A JP2019154777A JP7419703B2 JP 7419703 B2 JP7419703 B2 JP 7419703B2 JP 2019154777 A JP2019154777 A JP 2019154777A JP 2019154777 A JP2019154777 A JP 2019154777A JP 7419703 B2 JP7419703 B2 JP 7419703B2
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- 239000000203 mixture Substances 0.000 title claims description 105
- 239000002131 composite material Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 16
- 239000010955 niobium Substances 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- 239000000843 powder Substances 0.000 description 20
- 239000003985 ceramic capacitor Substances 0.000 description 17
- 238000010304 firing Methods 0.000 description 16
- 239000003574 free electron Substances 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 8
- 230000001747 exhibiting effect Effects 0.000 description 8
- 239000007858 starting material Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000010953 base metal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000011135 tin Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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Description
(SrxBa1-x)yNb2O5+yで表される組成式を有する複合酸化物を含み、
前記複合酸化物の結晶系が正方晶であり、前記yが1未満である。
前記組成式中の前記xが0.2~0.7であり、前記組成式中の前記yが1未満である。
前記第1副成分元素は、銅、亜鉛、パラジウム、タンタルおよびスズからなる群から選ばれる少なくともいずれか1つであってもよい。
前記第2副成分元素は、ガリウム、カリウム、モリブデン、ホウ素、ニッケルおよびジルコニウムからなる群から選ばれる少なくともいずれか1つであってもよい。
(1.1 積層セラミックコンデンサの全体構成)
本実施形態に係る電子部品の一例としての積層セラミックコンデンサ1が図1に示される。積層セラミックコンデンサ1は、誘電体層2と、内部電極層3と、が交互に積層された構成の素子本体10を有する。この素子本体10の両端部には、素子本体10の内部で交互に配置された内部電極層3と各々導通する一対の外部電極4が形成してある。素子本体10の形状に特に制限はないが、通常、直方体状とされる。また、素子本体10の寸法にも特に制限はなく、用途に応じて適当な寸法とすればよい。
誘電体層2は、後述する本実施形態に係る誘電体組成物から構成されている。
本実施形態では、内部電極層3は、各端部が素子本体10の対向する2端面の表面に交互に露出するように積層してある。
外部電極4に含有される導電材は特に限定されない。たとえばNi、Cu、Sn、Ag、Pd、Pt、Auあるいはこれらの合金、導電性樹脂等公知の導電材を用いればよい。外部電極4の厚さは用途等に応じて適宜決定すればよい。
本実施形態に係る誘電体層2を構成する誘電体組成物は、(SrxBa1-x)yNb2O5+yで表される組成式を有する複合酸化物を含有し、必要に応じて、第1副成分元素、第2副成分元素およびその他の成分元素を含有していてもよい。
本実施形態の複合酸化物は(SrxBa1-x)yNb2O5+yで表される組成式を有し、上記の組成式中のyは1未満である。本実施形態では、上記の組成式中のyは0.95以下であることが好ましい。
本実施形態に係る誘電体組成物は、第1副成分元素を含んでもよい。誘電体組成物が第1副成分元素を含むことにより、高い比誘電率を維持しつつ、抵抗率をより向上させることができる。
本実施形態に係る誘電体組成物は、第2副成分元素を含んでもよい。誘電体組成物が第2副成分元素を含むことにより、高い比誘電率を維持しつつ、抵抗率をより向上させることができる。
次に、図1に示す積層セラミックコンデンサ1の製造方法の一例について以下に説明する。
上述した実施形態では、本発明に係る電子部品が積層セラミックコンデンサである場合について説明したが、本発明に係る電子部品は、積層セラミックコンデンサに限定されず、上述した誘電体組成物を有する電子部品であれば何でもよい。
誘電体組成物に含まれる複合酸化物の出発原料として、炭酸バリウム(BaCO3)、炭酸ストロンチウム(SrCO3)および酸化ニオブ(Nb2O5)の粉末を準備した。焼成後の誘電体組成物に含まれる複合酸化物が表1に示すxおよびyとなるように、準備した出発原料を秤量した。
表2~表6に示す第1副成分元素または第2副成分元素の出発原料として、第1副成分元素または第2副成分元素の各酸化物の粉末を準備した。また、焼成後の誘電体組成物中の第1副成分元素または第2副成分元素の含有量が表2~表6に示す値になるように、準備した出発原料を秤量した。なお、表2~表6に記載の第1副成分元素または第2副成分元素の「含有量」とは、複合酸化物中のニオブ(Nb)100モル部に対する含有量である。
10… 素子本体
2… 誘電体層
3… 内部電極層
4… 外部電極
Claims (10)
- (SrxBa1-x)yNb2O5+yで表される組成式を有する誘電体組成物であって、
前記誘電体組成物は複合酸化物を含み、
前記複合酸化物の結晶系が正方晶であり、前記組成式中の前記yが1未満である誘電体組成物。 - 前記複合酸化物の空間群がP4bmである請求項1に記載の誘電体組成物。
- 前記組成式中の前記xが0.2~0.7である請求項1または2に記載の誘電体組成物。
- (SrxBa1-x)yNb2O5+yで表される複合酸化物を含み、
前記組成式中の前記xが0.2~0.7であり、前記組成式中の前記yが1未満である誘電体組成物。 - 前記組成式中の前記yが0.95以下である請求項1~4のいずれかに記載の誘電体組成物。
- 前記誘電体組成物が第1副成分元素を含み、
前記第1副成分元素は、銅、亜鉛、パラジウム、タンタルおよびスズからなる群から選ばれる少なくともいずれか1つである請求項1~5のいずれかに記載の誘電体組成物。 - 前記複合酸化物中のニオブ100モル部に対して、前記第1副成分元素が10モル部以下含まれる請求項6に記載の誘電体組成物。
- 前記誘電体組成物が第2副成分元素を含み、
前記第2副成分元素は、ガリウム、カリウム、モリブデン、ホウ素、ニッケルおよびジルコニウムからなる群から選ばれる少なくともいずれか1つである請求項1~7のいずれかに記載の誘電体組成物。 - 前記複合酸化物中のニオブ100モル部に対して、前記第2副成分元素が10モル部以下含まれる請求項8に記載の誘電体組成物。
- 請求項1~9のいずれかに記載の誘電体組成物を含む誘電体層を備える電子部品。
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