JP7414130B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP7414130B2 JP7414130B2 JP2022522415A JP2022522415A JP7414130B2 JP 7414130 B2 JP7414130 B2 JP 7414130B2 JP 2022522415 A JP2022522415 A JP 2022522415A JP 2022522415 A JP2022522415 A JP 2022522415A JP 7414130 B2 JP7414130 B2 JP 7414130B2
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- tensile stress
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- 239000004065 semiconductor Substances 0.000 title claims description 98
- 239000000758 substrate Substances 0.000 claims description 34
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
- H01L23/4926—Bases or plates or solder therefor characterised by the materials the materials containing semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1は、実施の形態1に係る半導体素子10の終端部の断面図である。この半導体素子10は半導体基板11を備えている。一例によれば半導体基板11はSi又はSiCである。半導体基板11の上面側には上面導電層12が設けられている。半導体基板11の下面側には下面導電層18が設けられている。上面導電層12と下面導電層18の材料は、例えばAlSi、Al又はAl合金である。
図4は、実施の形態2に係る半導体素子30の終端部の断面図である。上面導電層12の上面側に引張応力膜32が形成されている。引張応力膜32は上面導電層12より大きい引張応力を有する。例えば、上面導電層12はAlSiであり、引張応力膜32はTiである。実施の形態1と同様、半導体基板11の下面側には上面電極14よりも面積が大きい下面電極20が設けられている。
図5は、実施の形態3に係る半導体素子40の終端部の断面図である。実施の形態3の半導体素子40は、引張応力膜42の配置位置において実施の形態2の半導体素子30と相違する。引張応力膜42は、上面電極14の下面と絶縁膜16の側面とに接する。別の例によれば、引張応力膜42は、上面電極14の下面に接し絶縁膜16の下面に接しない。
Claims (9)
- 半導体基板と、
前記半導体基板の上面側に形成された上面電極と、
前記半導体基板の上面側に形成された絶縁膜と、
前記半導体基板の下面側に形成された、前記上面電極よりも面積が大きい下面電極と、を備えた半導体素子であって、
前記上面電極と前記下面電極は、圧縮応力を有する電極であり、P含有率が9~14%のNiPであり、
前記半導体素子は下に凸に反っていることを特徴とする半導体素子。 - 半導体基板と、
前記半導体基板の上面側に形成された上面導電層と、
前記上面導電層の上面側に形成された引張応力膜と、
前記引張応力膜の上面側に形成された上面電極と、
前記半導体基板の上面側に前記上面電極と隣接して形成された絶縁膜と、
前記半導体基板の下面側に形成された、前記上面電極よりも面積が大きい下面電極と、を備え、
前記引張応力膜は前記上面導電層より大きい引張応力を有し、前記半導体基板の下面側には形成されていないことを特徴とする半導体素子。 - 前記引張応力膜は、前記上面電極の下面と前記絶縁膜の下面とに接することを特徴とする請求項2に記載の半導体素子。
- 前記引張応力膜は、前記上面電極の下面と前記絶縁膜の側面とに接することを特徴とする請求項2に記載の半導体素子。
- 前記引張応力膜は、前記上面電極の下面に接し前記絶縁膜の下面に接しないことを特徴とする請求項2に記載の半導体素子。
- 前記上面電極と前記下面電極はNiPであり、前記引張応力膜はTiであり、前記上面導電層はAlSiであることを特徴とする請求項2から5のいずれか1項に記載の半導体素子。
- 前記半導体基板はSiであることを特徴とする請求項1から6のいずれか1項に記載の半導体素子。
- 前記上面電極の上面から前記下面電極の下面までの長さが100μm以下であることを特徴とする請求項1から7のいずれか1項に記載の半導体素子。
- 前記半導体基板は前記下面電極側に凸となる請求項1から8のいずれか1項に記載の半導体素子。
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PCT/JP2020/019138 WO2021229728A1 (ja) | 2020-05-13 | 2020-05-13 | 半導体素子 |
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JPWO2021229728A1 JPWO2021229728A1 (ja) | 2021-11-18 |
JP7414130B2 true JP7414130B2 (ja) | 2024-01-16 |
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US (1) | US20230040727A1 (ja) |
JP (1) | JP7414130B2 (ja) |
CN (1) | CN115552632A (ja) |
DE (1) | DE112020007180T5 (ja) |
WO (1) | WO2021229728A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010205991A (ja) | 2009-03-04 | 2010-09-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2011222898A (ja) | 2010-04-14 | 2011-11-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
WO2014037996A1 (ja) | 2012-09-04 | 2014-03-13 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
US20160126197A1 (en) | 2014-11-04 | 2016-05-05 | Infineon Technologies Ag | Semiconductor device having a stress-compensated chip electrode |
WO2017126344A1 (ja) | 2016-01-19 | 2017-07-27 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置を製造する方法 |
JP2019125758A (ja) | 2018-01-19 | 2019-07-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2020035812A (ja) | 2018-08-28 | 2020-03-05 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
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JP5669780B2 (ja) | 2012-03-21 | 2015-02-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
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- 2020-05-13 JP JP2022522415A patent/JP7414130B2/ja active Active
- 2020-05-13 DE DE112020007180.4T patent/DE112020007180T5/de active Pending
- 2020-05-13 US US17/759,134 patent/US20230040727A1/en active Pending
- 2020-05-13 CN CN202080100641.8A patent/CN115552632A/zh active Pending
- 2020-05-13 WO PCT/JP2020/019138 patent/WO2021229728A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010205991A (ja) | 2009-03-04 | 2010-09-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2011222898A (ja) | 2010-04-14 | 2011-11-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
WO2014037996A1 (ja) | 2012-09-04 | 2014-03-13 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
US20160126197A1 (en) | 2014-11-04 | 2016-05-05 | Infineon Technologies Ag | Semiconductor device having a stress-compensated chip electrode |
WO2017126344A1 (ja) | 2016-01-19 | 2017-07-27 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置を製造する方法 |
JP2019125758A (ja) | 2018-01-19 | 2019-07-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2020035812A (ja) | 2018-08-28 | 2020-03-05 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
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Publication number | Publication date |
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US20230040727A1 (en) | 2023-02-09 |
CN115552632A (zh) | 2022-12-30 |
DE112020007180T5 (de) | 2023-04-20 |
JPWO2021229728A1 (ja) | 2021-11-18 |
WO2021229728A1 (ja) | 2021-11-18 |
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