JP7412268B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- JP7412268B2 JP7412268B2 JP2020083485A JP2020083485A JP7412268B2 JP 7412268 B2 JP7412268 B2 JP 7412268B2 JP 2020083485 A JP2020083485 A JP 2020083485A JP 2020083485 A JP2020083485 A JP 2020083485A JP 7412268 B2 JP7412268 B2 JP 7412268B2
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Description
図1~図10を参照し、実施形態のプラズマ処理装置の構成例について説明する。図1は、実施形態のプラズマ処理装置の構成例を示す断面図である。図2は、図1のプラズマ処理装置の平面図である。なお、図2では、説明の便宜上、天板11の図示を省略している。
図11を参照し、図1のプラズマ処理装置に用いられるプラズマ源80について説明する。図11は、プラズマ源80の回路構成の一例を示す図である。
図13を参照し、実施形態のプラズマ処理方法について、前述のプラズマ処理装置を用いて薄膜を成膜する場合を例に挙げて説明する。実施形態のプラズマ処理方法で成膜可能な薄膜としては、SiO2、ZrO2、HfO2、TiO2、Al2O3等の酸化膜、SiN、HfN、TiN、AlNの窒化膜、ZrAlO、HfAlO、HfSiON等の上記化合物を組み合わせた複合膜が挙げられる。
80 プラズマ源
83 アンテナ
85 RF電源
87 可変容量部
Claims (8)
- 真空容器と、
前記真空容器内にプラズマを形成するプラズマ源と、
制御部と、
を備え、
前記プラズマ源は、
アンテナと、
前記アンテナの一端に接続され、前記アンテナにRF電力を供給するRF電源と、
前記アンテナの他端に接続され、静電容量が可変の可変容量部と、
を有し、
前記制御部は、
第1の周波数のRF電力を前記アンテナに供給することにより前記真空容器内でプラズマを着火させる工程と、
第2の周波数のRF電力を前記アンテナに供給することによりプラズマ処理を行う工程と、
を実行するように前記プラズマ源を制御するよう構成され、
前記第1の周波数は、前記第2の周波数よりも低い、
プラズマ処理装置。 - 前記可変容量部は、可変容量コンデンサを含む、
請求項1に記載のプラズマ処理装置。 - 前記可変容量部は、並列に接続された複数の固定容量コンデンサを含む、
請求項1又は2に記載のプラズマ処理装置。 - 前記プラズマ源は、前記RF電源と前記アンテナとの間に設けられた逆L字回路の整合器を更に有する、
請求項1乃至3のいずれか一項に記載のプラズマ処理装置。 - 前記制御部は、前記真空容器内を1Torr(133Pa)以上の圧力に制御した状態で、前記プラズマを着火させる工程を実行するように前記プラズマ源を制御するよう構成される、
請求項1乃至4のいずれか一項に記載のプラズマ処理装置。 - 前記真空容器内に設けられ、周方向に沿って上面に複数の基板を載置する回転テーブルと、
前記回転テーブルの周方向に互いに分離領域を介して離間した複数の領域の少なくとも1つの領域にプラズマ処理ガスを供給するプラズマ処理ガス供給部と、
前記プラズマ処理ガス供給部を上方及び側方から囲むプラズマ処理領域と、
を更に備え、
前記プラズマ源は、前記回転テーブルに対向するように設けられ、前記プラズマ処理領域内でプラズマを発生させる、
請求項1乃至5のいずれか一項に記載のプラズマ処理装置。 - 前記回転テーブルと前記アンテナとの間には、ファラデーシールドが設けられている、
請求項6に記載のプラズマ処理装置。 - 真空容器内にプラズマ処理ガスを供給すると共に前記プラズマ処理ガスを誘導結合によりプラズマ化するためのアンテナに第1の周波数のRF電力を供給することにより、前記真空容器内でプラズマを着火させる工程と、
前記着火させるステップの後に、前記真空容器内に前記プラズマ処理ガスを供給すると共に第2の周波数のRF電力を前記アンテナに供給することにより、プラズマ処理を行う工程と、
を有し、
前記第1の周波数は、前記第2の周波数よりも低い、
プラズマ処理方法。
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JPH10172792A (ja) * | 1996-12-05 | 1998-06-26 | Tokyo Electron Ltd | プラズマ処理装置 |
DE60219580T2 (de) * | 2001-12-20 | 2007-12-27 | Canon K.K. | Verfahren und Vorrichtung zur Plasmabearbeitung |
US20040173314A1 (en) * | 2003-03-05 | 2004-09-09 | Ryoji Nishio | Plasma processing apparatus and method |
JP2006294750A (ja) * | 2005-04-07 | 2006-10-26 | Toshiba Corp | 薄膜堆積装置及び方法 |
JP2012004160A (ja) * | 2010-06-14 | 2012-01-05 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
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JP2015090916A (ja) * | 2013-11-06 | 2015-05-11 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
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US20150053645A1 (en) | 2013-08-20 | 2015-02-26 | Panasonic Corporation | Plasma processing apparatus and plasma processing method |
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