JP7412200B2 - ガス溶解液製造装置 - Google Patents
ガス溶解液製造装置 Download PDFInfo
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- JP7412200B2 JP7412200B2 JP2020019162A JP2020019162A JP7412200B2 JP 7412200 B2 JP7412200 B2 JP 7412200B2 JP 2020019162 A JP2020019162 A JP 2020019162A JP 2020019162 A JP2020019162 A JP 2020019162A JP 7412200 B2 JP7412200 B2 JP 7412200B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 65
- 239000007788 liquid Substances 0.000 claims description 135
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 123
- 239000000243 solution Substances 0.000 claims description 66
- 238000010790 dilution Methods 0.000 claims description 64
- 239000012895 dilution Substances 0.000 claims description 64
- 238000011144 upstream manufacturing Methods 0.000 claims description 25
- 239000012528 membrane Substances 0.000 claims description 21
- 238000007865 diluting Methods 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 11
- 239000012510 hollow fiber Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 238000004090 dissolution Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 170
- 238000012986 modification Methods 0.000 description 34
- 230000004048 modification Effects 0.000 description 34
- 238000010586 diagram Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Description
本発明の第1の実施の形態のオゾン水製造装置の構成を、図面を参照して説明する。図1は、本実施の形態のオゾン水製造装置を示す説明図である。図1に示すように、オゾン水製造装置1は、オゾン水の原料となる気体(オゾンガス)を供給する気体供給ライン2と、オゾン水の原料となる液体(純水などの原料水)を供給する液体供給ライン3と、オゾンガスと原料水を混合してガス溶解液(オゾン水)を生成するオゾン水生成部4を備えている。
図2は、第1の実施の形態のオゾン水製造装置1の変形例1を示す図である。図2に示すように、変形例1では、排出ラインに、オゾン水(高濃度のオゾン水)を希釈するための希釈用液体(純水)を供給する希釈ライン22が接続されている。希釈ライン22には、希釈用純水の流量を調整する流量調整部23と、希釈用純水の流量を測定する流量計24が設けられている。流量調整部23は、例えば、流量調整つまみ付きのエアー駆動弁で構成され、排水ライン14に送られるオゾン水の流量に応じて、希釈用純水の流量を手動で調整することができる。
図3は、第1の実施の形態のオゾン水製造装置1の変形例2を示す図である。図3に示すように、変形例2では、排水ライン14に、排水口に送られるオゾン水の濃度を測定する濃度測定部25が設けられている。流量調整部23は、例えば、電空レギュレータ弁で構成され、濃度測定部25で測定されたオゾン水の濃度に応じて、希釈用純水の流量を自動で調整することができる。
図4は、第1の実施の形態のオゾン水製造装置1の変形例3を示す図である。図4に示すように、変形例3では、濃度測定部25は、圧力解放弁の上流側に設けられ、希釈ライン22は、圧力解放弁の上流側において排水ライン14に接続されている。この場合、希釈ライン22には、希釈用純水の圧力を上げるための昇圧ポンプ26が設けられている。また、流量調整部23は、例えば、流量調整つまみ付きのエアー駆動弁で構成され、排水ライン14に送られるオゾン水の流量に応じて、希釈用純水の流量を手動で調整することができる。
次に、本発明の第2の実施の形態のオゾン水製造装置1について説明する。ここでは、第2の実施の形態のオゾン水製造装置1が、第1の実施の形態と相違する点を中心に説明する。ここで特に言及しない限り、本実施の形態の構成および動作は、第1の実施の形態と同様である。
図6は、第2の実施の形態のオゾン水製造装置1の変形例1を示す図である。図6に示すように、変形例1では、排出ラインに、オゾン水(高濃度のオゾン水)を希釈するための希釈用液体(純水)を供給する希釈ライン22が接続されている。希釈ライン22には、希釈用純水の流量を調整する流量調整部23と、希釈用純水の流量を測定する流量計24が設けられている。流量調整部23は、例えば、流量調整つまみ付きのエアー駆動弁で構成され、排水ライン14に送られるオゾン水の流量に応じて、希釈用純水の流量を手動で調整することができる。
図7は、第2の実施の形態のオゾン水製造装置1の変形例2を示す図である。図7に示すように、変形例2では、排水ライン14に、排水口に送られるオゾン水の濃度を測定する濃度測定部25が設けられている。流量調整部23は、例えば、電空レギュレータ弁で構成され、濃度測定部25で測定されたオゾン水の濃度に応じて、希釈用純水の流量を自動で調整することができる。
図8は、第2の実施の形態のオゾン水製造装置1の変形例3を示す図である。図8に示すように、変形例3では、濃度測定部25は、圧力解放弁の上流側に設けられ、希釈ライン22は、圧力解放弁の上流側において排水ライン14に接続されている。この場合、希釈ライン22には、希釈用純水の圧力を上げるための昇圧ポンプ26が設けられている。また、流量調整部23は、例えば、流量調整つまみ付きのエアー駆動弁で構成され、排水ライン14に送られるオゾン水の流量に応じて、希釈用純水の流量を手動で調整することができる。
2 気体供給ライン
3 液体供給ライン
4 オゾン水生成部(ガス溶解液生成部)
5 気液分離部
6 オゾンガス溶解部(気体溶解部)
7 排気ライン
8 分解触媒
9 圧力調整部
10 昇圧ポンプ
11 エアー駆動弁
12 流量計
13 送出ライン
14 排水ライン
15 濃度計
16 圧力センサ
17 流量計
18 エアー駆動弁
19 手動弁
20 エアー駆動弁
21 手動弁(圧力解放弁)
22 希釈ライン
23 流量調整部
24 流量計
25 濃度測定部
26 昇圧ポンプ
27 圧力調整部
Claims (9)
- ガス溶解液の原料となる気体であるオゾンガスを供給する気体供給ラインと、
ガス溶解液の原料となる液体を供給する液体供給ラインと、
前記オゾンガスと前記液体を混合してガス溶解液を生成するガス溶解液生成部と、
生成された前記ガス溶解液を、ユースポイントに供給される供給液体と、排気口から排出される排出気体とに気液分離する気液分離部と、
前記液体供給ラインに設けられ、気液分離された前記排出気体を前記液体に溶解させる気体溶解部と、
前記気液分離部から前記ユースポイントへ前記供給液体を送出する送出ラインと、
前記送出ラインから分岐して設けられ、排水口へ接続される排水ラインと、
を備え、
前記気体溶解部は、気体透過性膜で構成された中空糸膜で構成されており、
前記排水ラインには、前記供給液体を希釈するための希釈用液体を供給する希釈ラインが接続され、
前記排水ラインには、前記排水口に送られる前記供給液体の濃度を測定する濃度測定部と、圧力解放弁が設けられていることを特徴とするガス溶解液製造装置。 - 前記液体供給ラインには、前記ガス溶解液生成部に供給する前記液体の圧力を上昇させる昇圧ポンプが設けられ、
前記気体溶解部は、前記液体供給ラインにおいて前記昇圧ポンプより下流側に設けられている、請求項1に記載のガス溶解液製造装置。 - 前記液体供給ラインには、前記ガス溶解液生成部に供給する前記液体の圧力を上昇させる昇圧ポンプが設けられ、
前記気体溶解部は、前記液体供給ラインにおいて前記昇圧ポンプより上流側に設けられ、
前記気体溶解部と前記気液分離部との間には、気液分離された前記排出気体の圧力を下降させる圧力調整部が備えられている、請求項1に記載のガス溶解液製造装置。 - 前記気体溶解部に供給される前記排出気体の圧力は、前記気体溶解部に供給される前記液体の圧力より低くなるように設定されている、請求項1~請求項3のいずれか一項に記載のガス溶解液製造装置。
- 前記希釈ラインには、前記希釈用液体の流量を調整する流量調整部が設けられている、請求項1~請求項4のいずれか一項に記載のガス溶解液製造装置。
- 前記流量調整部は、前記排水ラインに送られる前記供給液体の流量に応じて、前記希釈用液体の流量を調整する、請求項5に記載のガス溶解液製造装置。
- 前記流量調整部は、前記濃度測定部で測定された前記供給液体の濃度に応じて、前記希釈用液体の流量を調整する、請求項5に記載のガス溶解液製造装置。
- 前記濃度測定部は、前記圧力解放弁の下流側に設けられ、
前記希釈ラインは、前記圧力解放弁の下流側において前記排水ラインに接続される、請求項1~請求項6のいずれか一項に記載のガス溶解液製造装置。 - 前記濃度測定部は、前記圧力解放弁の上流側に設けられ、
前記希釈ラインは、前記圧力解放弁の上流側において前記排水ラインに接続され、
前記希釈ラインには、昇圧ポンプが設けられている、請求項1~請求項6のいずれか一項に記載のガス溶解液製造装置。
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