JP7410276B2 - 半導体光デバイス - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 282
- 230000003287 optical effect Effects 0.000 title claims description 74
- 239000000758 substrate Substances 0.000 claims description 25
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
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Description
はじめに、本発明の実施の形態1に係る半導体光デバイスについて図1を参照して説明する。この半導体光デバイスは、まず、基板101の上に形成された半導体より低屈折率な第1低屈折率層102と、第1低屈折率層102の上に形成された第1導電型の第1半導体層103と、第1半導体層103の上に形成された活性層104と、活性層104の上に接して形成された第2導電型の第2半導体層105とを備える。活性層104において、光が生成される。活性層104は、例えば、図1の紙面の手前から奥にかけて延在している。また、活性層104と第2半導体層105とは平面視で同じ面積に形成され、平面視で活性層104の上に第2半導体層105が重なっている。
ここで、上述したような結晶成長などによる高温処理では、シリコンからなる基板101とInPとの熱膨張係数差により応力が発生する。
次に、本発明の実施の形態2に係る半導体光デバイスについて図3を参照して説明する。この半導体光デバイスは、まず、基板101の上に形成された第1低屈折率層102と、第1低屈折率層102の上に形成された第1導電型の第1半導体層103とを備える。これらは、前述した実施の形態1と同様である。
Claims (7)
- 基板の上に形成された半導体より低屈折率な第1低屈折率層と、
前記第1低屈折率層の上に形成された第1導電型のInPからなる第1半導体層と、
前記第1半導体層の上に形成されたInGaAlAs、またはInGaAs、またはInGaAsPからなる活性層と、
前記活性層の上に接して形成された第2導電型のInPからなる第2半導体層と、
前記活性層の形成領域の上方で、前記第2半導体層の上に形成された第2導電型のInPからなる第3半導体層と、
前記活性層および前記第2半導体層によるリッジパターンの両側面に接して前記第1半導体層の上に形成された非導電性または低導電性の第4半導体層および第5半導体層と、
前記第3半導体層によるリッジパターンの一方の側面に接して前記第4半導体層の上に形成された半導体より低屈折率な第2低屈折率層と、
前記第3半導体層によるリッジパターンの他方の側面に接して前記第5半導体層の上に形成された半導体より低屈折率な第3低屈折率層と、
前記第1半導体層に電気的に接続する第1電極と、
前記第3半導体層に電気的に接続する第2電極と
を備え、
前記第3半導体層の導波方向に垂直で前記基板の平面に平行な方向の前記活性層の側の幅が、同一の方向の前記活性層の幅より小さく、500nm以下とされ、前記第1半導体層と前記活性層と前記第2半導体層との合計の厚さは、350nm以下とされていることを特徴とする半導体光デバイス。 - 基板の上に形成された半導体より低屈折率な第1低屈折率層と、
前記第1低屈折率層の上に形成された第1導電型のInPからなる第1半導体層と、
前記第1半導体層の上に形成されたInGaAlAs、またはInGaAs、またはInGaAsPからなる活性層と、
前記活性層の上に接して形成された第2導電型のInPからなる第2半導体層と、
前記活性層の形成領域の上方で、前記第2半導体層の上に形成された第2導電型のInPからなる第3半導体層と、
前記第3半導体層によるリッジパターンの両側面に接して前記第2半導体層の上に形成された半導体より低屈折率な第2低屈折率層および第3低屈折率層と、
前記第1半導体層に電気的に接続する第1電極と、
前記第3半導体層に電気的に接続する第2電極と
を備え、
前記第3半導体層の導波方向に垂直で前記基板の平面に平行な方向の前記活性層の側の幅が、同一の方向の前記活性層の幅より小さく、500nm以下とされ、前記第1半導体層と前記活性層と前記第2半導体層との合計の厚さは、350nm以下とされていることを特徴とする半導体光デバイス。 - 請求項1または2記載の半導体光デバイスにおいて、
前記第2電極は、コンタクト層を介して前記第3半導体層の上に形成されていることを特徴とする半導体光デバイス。 - 請求項1~3のいずれか1項に記載の半導体光デバイスにおいて、
前記活性層と前記第2半導体層とは平面視で同じ面積に形成され、平面視で前記活性層の上に前記第2半導体層が重なっていることを特徴とする半導体光デバイス。 - 請求項1~4のいずれか1項に記載の半導体光デバイスにおいて、
前記第2半導体層の屈折率は、前記第3半導体層と前記活性層との間の屈折率とされていることを特徴とする半導体光デバイス。 - 請求項1~5のいずれか1項に記載の半導体光デバイスにおいて、
前記活性層の下の領域の前記第1低屈折率層に埋め込まれたコアを備えることを特徴とする半導体光デバイス。 - 請求項1~6のいずれか1項に記載の半導体光デバイスにおいて、
前記活性層の下の領域の前記第1低屈折率層に埋め込まれた回折格子を備えることを特徴とする半導体光デバイス。
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Citations (4)
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JP2000208814A (ja) | 1998-11-12 | 2000-07-28 | Sharp Corp | 半導体発光素子 |
JP2002237657A (ja) | 2001-02-09 | 2002-08-23 | Ricoh Co Ltd | 半導体レーザアレイおよび電子写真システムおよび光通信システムおよび光ピックアップシステム |
JP2016171173A (ja) | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | 半導体光素子 |
US20180323574A1 (en) | 2017-05-05 | 2018-11-08 | International Business Machines Corporation | Electro-optical device with iii-v gain materials and integrated heat sink |
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JP2000208814A (ja) | 1998-11-12 | 2000-07-28 | Sharp Corp | 半導体発光素子 |
JP2002237657A (ja) | 2001-02-09 | 2002-08-23 | Ricoh Co Ltd | 半導体レーザアレイおよび電子写真システムおよび光通信システムおよび光ピックアップシステム |
JP2016171173A (ja) | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | 半導体光素子 |
US20180323574A1 (en) | 2017-05-05 | 2018-11-08 | International Business Machines Corporation | Electro-optical device with iii-v gain materials and integrated heat sink |
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