JP7387794B2 - 遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 - Google Patents
遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 Download PDFInfo
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- 238000007254 oxidation reaction Methods 0.000 title description 6
- 238000012545 processing Methods 0.000 claims description 92
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- 239000002243 precursor Substances 0.000 claims description 29
- 230000004913 activation Effects 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 3
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- 150000003254 radicals Chemical class 0.000 description 18
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- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000005389 semiconductor device fabrication Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- -1 tungsten halogen Chemical class 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Description
Claims (13)
- 処理チャンバの処理空間に流体を供給する流体導管内に配置される分流器であって、
前記処理空間に通じる前記流体導管の出口に隣接して配置される出口端部であって、湾曲した面を有し、前記湾曲した面の高さが、前記湾曲した面の中心部において最も高く前記湾曲した面の端部に向かって減少し、前記湾曲した面の前記中心部は前記流体導管の中心と一致するように配置される、出口端部、
前記出口端部とは反対側の入口端部、
第1のセグメントと第2のセグメントと第3のセグメントとを備える起伏のある上部であって、前記第1のセグメントが、三角形状のセグメントであり、前記第2のセグメントが、前記湾曲した面と接続する第1の湾曲した縁部を有する三角形状のセグメントであり、前記第3のセグメントが、前記湾曲した面と接続する第2の湾曲した縁部を有する三角形状のセグメントである、起伏のある上部、及び
下部
を備える分流器。 - 前記第2のセグメントが、前記第1の湾曲した縁部とは別の縁部において、前記第1のセグメントの第1の縁部に沿って前記第1のセグメントに隣接し、前記第3のセグメントが、前記第2の湾曲した縁部とは別の縁部において、前記第1のセグメントの第2の縁部に沿って前記第1のセグメントに隣接する、請求項1に記載の分流器。
- 請求項1又は2に記載の分流器を備える処理チャンバであって、
第1の側部及び前記第1の側部とは反対の第2の側部を備えるチャンバ本体と、
前記第1の側部内に配置された流れアセンブリであって、
流れ部材の入口から出口へ側方に拡大する導管、及び
前記出口端部が前記流れ部材の前記出口に隣接し、前記湾曲した面の前記中心部が前記導管の中心と一致するように、前記導管内に配置された前記分流器
を備える流れアセンブリと、
前記第2の側部に隣接した分散されたポンピング構造と
を更に備える、処理チャンバ。 - 前記分流器の前記湾曲した面が、第1の長さを有し、前記流れアセンブリの第1の側部が、第2の長さを有し、前記第1の長さが、前記第2の長さの3/5と4/5の間である、請求項3に記載の処理チャンバ。
- 前記流れアセンブリが、凹部を備える、請求項3又は4に記載の処理チャンバ。
- 請求項1又は2に記載の分流器を備える処理システムであって、
前駆体活性化装置と、
前記前駆体活性化装置に連結された処理チャンバであって、第1の側部及び前記第1の側部とは反対の第2の側部を有するチャンバ本体を備える、処理チャンバと、
前記第1の側部内に配置された流れアセンブリと、
前記第2の側部に隣接した基板支持部分内に位置付けられた分散されたポンピング構造と
を更に備え、
前記流れアセンブリは、
入口側部を有する流れ部材であって、
凹部、
前記凹部内の入口、
前記入口側部とは反対の出口側部であって、湾曲し、出口を有する出口側部、及び
前記入口側部から前記出口側部に延在し、前記入口を前記出口と流体連結する導管
を備える流れ部材と、
前記出口端部が前記流れ部材の前記出口に隣接し、前記湾曲した面の前記中心部が前記導管の中心と一致するように、前記導管内に配置された前記分流器と
を備えている、処理システム。 - 前記導管が、前記入口から前記出口へ側方に拡大する、請求項6に記載の処理システム。
- 前記分流器が、前記導管に適合する拡大する幅を更に備える、請求項6又は7に記載の処理システム。
- 処理チャンバの処理空間に流体を供給する流体導管内に配置される分流器であって、
前記処理空間に通じる前記流体導管の出口に隣接して配置される出口端部であって、湾曲した面を有し、前記湾曲した面の高さが、前記湾曲した面の中心部において最も高く前記湾曲した面の端部に向かって減少し、前記湾曲した面の前記中心部は前記流体導管の中心と一致するように配置される、出口端部、
前記出口端部とは反対側の入口端部、
第1のセグメントと第2のセグメントと第3のセグメントとを備える起伏のある上部であって、前記第1のセグメントが、三角形状のセグメントであり、前記第2のセグメントが、前記湾曲した面と接続する第1の湾曲した縁部を有し、前記第3のセグメントが、前記湾曲した面と接続する第2の湾曲した縁部を有する、起伏のある上部、及び
下部
を備える分流器。 - 前記第2のセグメントが、前記第1の湾曲した縁部とは別の縁部において、前記第1のセグメントの第1の縁部に沿って前記第1のセグメントに隣接し、前記第3のセグメントが、前記第2の湾曲した縁部とは別の縁部において、前記第1のセグメントの第2の縁部に沿って前記第1のセグメントに隣接する、請求項9に記載の分流器。
- 請求項9又は10に記載の分流器を備える処理チャンバであって、
第1の側部及び前記第1の側部とは反対の第2の側部を備えるチャンバ本体と、
前記第1の側部内に配置された流れアセンブリであって、
流れ部材の入口から出口へ側方に拡大する導管、及び
前記出口端部が前記流れ部材の前記出口に隣接し、前記湾曲した面の前記中心部が前記導管の中心と一致するように、前記導管内に配置された前記分流器
を備える流れアセンブリと、
前記第2の側部に隣接した分散されたポンピング構造と
を更に備える、処理チャンバ。 - 前記分流器の前記湾曲した面が、第1の長さを有し、前記流れアセンブリの第1の側部が、第2の長さを有し、前記第1の長さが、前記第2の長さの3/5と4/5の間である、請求項11に記載の処理チャンバ。
- 前記流れアセンブリが、凹部を備える、請求項11又は12に記載の処理チャンバ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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IN201841003045 | 2018-01-25 | ||
IN201841003045 | 2018-01-25 | ||
PCT/US2018/067479 WO2019147371A1 (en) | 2018-01-25 | 2018-12-26 | Dogbone inlet cone profile for remote plasma oxidation chamber |
JP2020540259A JP7050159B2 (ja) | 2018-01-25 | 2018-12-26 | 遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 |
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JP7387794B2 true JP7387794B2 (ja) | 2023-11-28 |
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JP2022051030A Active JP7387794B2 (ja) | 2018-01-25 | 2022-03-28 | 遠隔プラズマ酸化チャンバ用ドッグボーン入口錐体輪郭 |
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US (3) | US10636626B2 (ja) |
JP (2) | JP7050159B2 (ja) |
KR (2) | KR102453697B1 (ja) |
CN (2) | CN117198851A (ja) |
TW (2) | TWI783107B (ja) |
WO (1) | WO2019147371A1 (ja) |
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USD924825S1 (en) * | 2018-01-24 | 2021-07-13 | Applied Materials, Inc. | Chamber inlet |
US10636626B2 (en) | 2018-01-25 | 2020-04-28 | Applied Materials, Inc. | Dogbone inlet cone profile for remote plasma oxidation chamber |
TW202117217A (zh) * | 2019-09-19 | 2021-05-01 | 美商應用材料股份有限公司 | 清潔減少滯留區的隔離閥 |
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US10636626B2 (en) | 2020-04-28 |
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