JP7379425B2 - 固体撮像装置、および電子装置 - Google Patents
固体撮像装置、および電子装置 Download PDFInfo
- Publication number
- JP7379425B2 JP7379425B2 JP2021137786A JP2021137786A JP7379425B2 JP 7379425 B2 JP7379425 B2 JP 7379425B2 JP 2021137786 A JP2021137786 A JP 2021137786A JP 2021137786 A JP2021137786 A JP 2021137786A JP 7379425 B2 JP7379425 B2 JP 7379425B2
- Authority
- JP
- Japan
- Prior art keywords
- underfill
- substrate
- solid
- optical layer
- electronic chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims description 96
- 230000003287 optical effect Effects 0.000 claims description 73
- 230000002265 prevention Effects 0.000 claims description 65
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 72
- 238000004891 communication Methods 0.000 description 43
- 238000001514 detection method Methods 0.000 description 43
- 238000005516 engineering process Methods 0.000 description 20
- 239000011295 pitch Substances 0.000 description 19
- 238000012545 processing Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000010267 cellular communication Effects 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02233—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body not in direct contact with the bonding area
- H01L2224/02245—Flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
まず、本実施の形態の固体撮像素子について説明する前に、図1乃至図3を参照して、本技術が必要となる元となった固体撮像素子の構成について説明する。
図4は、本実施の形態である固体撮像素子の基板の構成例を示す上面図である。ただし、図4においては、図3に示された固体撮像素子の構成の一例と共通する構成要素については同一の符号をつけている。
図1乃至図3に示された固体撮像素子の構成では、枠状の溝15によってアンダーフィル14を囲い込むことによって流出を防いでいた。これに対して、本実施の形態である固体撮像素子の基板31では、アンダーフィル14が充填される領域(図4の場合、電子チップ13の下部)とアンダーフィル14が流入しては困る部位(図4の場合、光学層21および接続パッド22)との間に流入防止部32および33を設けることにより、アンダーフィル14が流入しては困る部位に対してアンダーフィル14の流入を防ぐようになされている。
図4に示された構成例では、各接続パッド22を囲むように流入防止部33を形成していた。
図8は、基板61上に複数の電子チップ13を載置し、それらと基板61の間に一体的にアンダーフィル14を充填した構成例(第2の変形例)を示す上面図である。すなわち、図8においては、3個の電子チップ13-1乃至13-3と基板61の間に一体的にアンダーフィル14が充填されている。
図9は、複数の基板71を積層した構成例(第3の構成例)場合を示す断面図である。
図10を参照して、アンダーフィル14および光学層21の間における構造の第1の構成例について説明する。
図11を参照して、アンダーフィル14および光学層21の間における構造の第2の構成例について説明する。なお、図11に示す構造のうち、図10に示す構造と共通する部分については同一の符号を付し、その詳細な説明は省略する。
図12および図13を参照して、アンダーフィル14および光学層21の間における構造の第3および第4の構成例について説明する。なお、図12および図13に示す構造のうち、図10に示す構造と共通する部分については同一の符号を付し、その詳細な説明は省略する。
本技術は、例えば、自動車、電気自動車、ハイブリッド電気自動車、自動二輪車、自転車、パーソナルモビリティ、飛行機、ドローン、船舶、ロボット、建設機械、農業機械(トラクタ)などのいずれかの種類の移動体に搭載される装置として実現されてもよい。
(1)
基板に載置された電子チップと、
前記基板と前記電子チップとの間に存在し、前記基板と前記電子チップとを電気的に接続する電極と、
前記基板と前記電子チップとの間に充填されることによって前記電極を封止、保護するアンダーフィルと、
前記基板上に形成された、前記アンダーフィルの流入から保護すべき保護対象部と、
前記保護対象部の全体または一部分を囲むように前記基板に形成されたアンダーフィル流入防止部と
を備える電子基板。
(2)
前記アンダーフィル流入防止部は、多重構造を有する
前記(1)に記載の電子基板。
(3)
前記アンダーフィル流入防止部は、凹状の溝である
前記(1)または(2)に記載の電子基板。
(4)
前記凹状の溝は、前記基板の表面に対して60°乃至90°の傾斜角を有する
前記(3)に記載の電子基板。
(5)
前記凹状の溝の深さ/幅は、0.5乃至16000である
前記(3)または(4)に記載の電子基板。
(6)
前記アンダーフィル流入防止部は、凸状の壁である
前記(1)または(2)に記載の電子基板。
(7)
前記保護対象部は、外部機器との接続パッドである
前記(1)から(6)のいずれかに記載の電子基板。
(8)
前記保護対象部は、受光層であり、
前記電子チップは、機能回路を有する半導体チップであり、
前記電子基板は、固体撮像素子の構成要素である
前記(1)から(7)のいずれかに記載の電子基板。
(9)
前記アンダーフィル流入防止部は、1または複数の前記保護対象部の全体または一部分を囲むように前記基板に形成されている
前記(1)から(8)のいずれかに記載の電子基板。
(10)
前記アンダーフィルから前記受光層までの間に設けられる平坦部の幅が、前記受光層に入射する入射光の中心波長λに対して、λ/8乃至30λの範囲である
前記(8)に記載の電子基板。
(11)
前記アンダーフィル流入防止部は、複数本の凹状溝部により形成され、それぞれの前記凹状溝部を配置する間隔が非同一ピッチとなるように構成される
前記(10)に記載の電子基板。
(12)
複数本の前記凹状溝部どうしの間隔が、前記受光層に入射する入射光の中心波長λに対して、λ/8乃至30λの範囲である
前記(11)に記載の電子基板。
(13)
複数本の前記凹状溝部が、それぞれ異なる幅で形成される
前記(11)または(12)に記載の電子基板。
(14)
複数本の前記凹状溝部それぞれの幅が、前記受光層に入射する入射光の中心波長λに対して、λ/8乃至30λの範囲である
前記(11)から(13)のいずれかに記載の電子基板。
(15)
電子基板が採用されている電子装置において、
前記電子基板は、
基板に載置された電子チップと、
前記基板と前記電子チップとの間に存在し、前記基板と前記電子チップとを電気的に接続する電極と、
前記基板と前記電子チップとの間に充填されることによって前記電極を封止、保護するアンダーフィルと、
前記基板上に形成された、前記アンダーフィルの流入から保護すべき保護対象部と、 前記保護対象部の全体または一部分を囲むように前記基板に形成されたアンダーフィル流入防止部とを備える
電子装置。
Claims (13)
- 基板の光入射面側に配置された光電変換領域を有する光学層と、
前記光学層が形成される領域とは異なる領域において前記基板の光入射面側に配置された電子チップと
を備え、
前記基板と前記電子チップとは電極により電気的に接続され、
前記電子チップと前記基板との間にアンダーフィルが配置され、
平面視において前記光学層と前記電子チップとの間に前記電子チップを取り囲まずに、前記基板に形成されたアンダーフィル流入防止部が配置され、
前記アンダーフィル流入防止部は、複数本の凹状溝部により形成され、それぞれの前記凹状溝部どうしの間隔が非同一ピッチ、または、それぞれの前記凹状溝部の幅が非同一幅となるように構成される
固体撮像装置。 - 前記アンダーフィルは、前記基板と前記電子チップとの間に充填されることによって前記電極を封止、保護し、
前記アンダーフィル流入防止部は、前記基板上に形成された、前記アンダーフィルの流入から保護すべき保護対象部の全体または一部分を囲むように形成される
請求項1に記載の固体撮像装置。 - 前記アンダーフィル流入防止部は、多重構造を有する
請求項1に記載の固体撮像装置。 - 前記凹状溝部は、前記基板の表面に対して60°乃至90°の傾斜角を有する
請求項1に記載の固体撮像装置。 - 前記凹状溝部の深さ/幅は、0.5乃至16000である
請求項1に記載の固体撮像装置。 - 前記アンダーフィル流入防止部は、複数本の前記凹状溝部に替えて、複数本の凸状溝部により形成される
請求項1に記載の固体撮像装置。 - 前記保護対象部は、外部機器との接続パッドである
請求項2に記載の固体撮像装置。 - 前記保護対象部は、前記光学層であり、
前記電子チップは、機能回路を有する半導体チップである
請求項2に記載の固体撮像装置。 - 前記アンダーフィル流入防止部は、1または複数の前記保護対象部の全体または一部分を囲むように前記基板に形成されている
請求項2に記載の固体撮像装置。 - 前記アンダーフィルから前記保護対象部までの間に設けられる平坦部の幅が、前記保護対象部である光学層に入射する入射光の中心波長λに対して、λ/8乃至30λの範囲である
請求項2に記載の固体撮像装置。 - 複数本の前記凹状溝部どうしの間隔が、前記光学層に入射する入射光の中心波長λに対して、λ/8乃至30λの範囲である
請求項1に記載の固体撮像装置。 - 複数本の前記凹状溝部それぞれの幅が、前記光学層に入射する入射光の中心波長λに対して、λ/8乃至30λの範囲である
請求項1に記載の固体撮像装置。 - 固体撮像装置が採用されている電子装置において、
前記固体撮像装置は、
基板の光入射面側に配置された光電変換領域を有する光学層と、
前記光学層が形成される領域とは異なる領域において前記基板の光入射面側に配置された電子チップと
を備え、
前記基板と前記電子チップとは電極により電気的に接続され、
前記電子チップと前記基板との間にアンダーフィルが配置され、
平面視において前記光学層と前記電子チップとの間に前記電子チップを取り囲まずに、前記基板に形成されたアンダーフィル流入防止部が配置され、
前記アンダーフィル流入防止部は、複数本の凹状溝部により形成され、それぞれの前記凹状溝部どうしの間隔が非同一ピッチ、または、それぞれの前記凹状溝部の幅が非同一幅となるように構成される
電子装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016206876 | 2016-10-21 | ||
JP2016206876 | 2016-10-21 | ||
JP2018545765A JP6946316B2 (ja) | 2016-10-21 | 2017-10-20 | 電子基板、および電子装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018545765A Division JP6946316B2 (ja) | 2016-10-21 | 2017-10-20 | 電子基板、および電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021192442A JP2021192442A (ja) | 2021-12-16 |
JP7379425B2 true JP7379425B2 (ja) | 2023-11-14 |
Family
ID=62019361
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018545765A Active JP6946316B2 (ja) | 2016-10-21 | 2017-10-20 | 電子基板、および電子装置 |
JP2021137786A Active JP7379425B2 (ja) | 2016-10-21 | 2021-08-26 | 固体撮像装置、および電子装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018545765A Active JP6946316B2 (ja) | 2016-10-21 | 2017-10-20 | 電子基板、および電子装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10910289B2 (ja) |
JP (2) | JP6946316B2 (ja) |
CN (2) | CN116960068A (ja) |
WO (1) | WO2018074581A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11676929B2 (en) | 2016-10-21 | 2023-06-13 | Sony Semiconductor Solutions Corporation | Electronic substrate and electronic apparatus |
WO2018074581A1 (ja) * | 2016-10-21 | 2018-04-26 | ソニーセミコンダクタソリューションズ株式会社 | 電子基板、および電子装置 |
WO2020079997A1 (ja) * | 2018-10-15 | 2020-04-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
US20230036259A1 (en) * | 2020-01-14 | 2023-02-02 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic device |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005259725A (ja) | 2004-03-09 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 配線基板および電子部品実装体 |
JP2006140327A (ja) | 2004-11-12 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 配線基板およびこれを用いた電子部品の実装方法 |
JP2006294986A (ja) | 2005-04-13 | 2006-10-26 | Fuji Photo Film Co Ltd | 基板実装構造、及び、カメラモジュール |
JP2008252026A (ja) | 2007-03-30 | 2008-10-16 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2009177061A (ja) | 2008-01-28 | 2009-08-06 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2010087516A (ja) | 2008-09-29 | 2010-04-15 | Samsung Electronics Co Ltd | インクジェット方式のダムを具備する半導体パッケージ及びその製造方法 |
JP2014103198A (ja) | 2012-11-19 | 2014-06-05 | J Devices:Kk | 半導体装置及びその製造方法 |
JP2015023163A (ja) | 2013-07-19 | 2015-02-02 | ソニー株式会社 | 固体撮像装置および固体撮像装置の製造方法。 |
WO2016039173A1 (ja) | 2014-09-11 | 2016-03-17 | ソニー株式会社 | 固体撮像素子、撮像装置、電子機器、および半導体装置 |
JP2016163011A (ja) | 2015-03-05 | 2016-09-05 | ソニー株式会社 | 半導体装置および製造方法、並びに電子機器 |
WO2018074581A1 (ja) | 2016-10-21 | 2018-04-26 | ソニーセミコンダクタソリューションズ株式会社 | 電子基板、および電子装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09205103A (ja) * | 1996-01-24 | 1997-08-05 | Toshiba Corp | 半導体装置 |
JP3362249B2 (ja) * | 1997-11-07 | 2003-01-07 | ローム株式会社 | 半導体装置、およびその製造方法 |
JP2002050642A (ja) * | 2000-07-31 | 2002-02-15 | Hitachi Aic Inc | プリント配線板の製造方法 |
JP2003234362A (ja) * | 2002-02-12 | 2003-08-22 | Yokogawa Electric Corp | 半導体装置 |
WO2008078746A1 (ja) * | 2006-12-26 | 2008-07-03 | Panasonic Corporation | 半導体素子の実装構造体及び半導体素子の実装方法 |
US7883937B1 (en) * | 2007-04-30 | 2011-02-08 | Altera Corporation | Electronic package and method of forming the same |
JP2010087239A (ja) | 2008-09-30 | 2010-04-15 | Alps Electric Co Ltd | 電子モジュール |
US8441123B1 (en) * | 2009-08-13 | 2013-05-14 | Amkor Technology, Inc. | Semiconductor device with metal dam and fabricating method |
JP2011071381A (ja) * | 2009-09-28 | 2011-04-07 | Toshiba Corp | 積層型半導体装置およびその製造方法 |
US8952552B2 (en) * | 2009-11-19 | 2015-02-10 | Qualcomm Incorporated | Semiconductor package assembly systems and methods using DAM and trench structures |
JP2011243612A (ja) * | 2010-05-14 | 2011-12-01 | Sony Corp | 半導体装置及びその製造方法並びに電子機器 |
WO2015056430A1 (ja) * | 2013-10-16 | 2015-04-23 | パナソニック株式会社 | 半導体装置 |
TWI556387B (zh) * | 2015-04-27 | 2016-11-01 | 南茂科技股份有限公司 | 多晶片封裝結構、晶圓級晶片封裝結構及其製程 |
CN107533984B (zh) * | 2015-07-01 | 2020-07-10 | 三菱电机株式会社 | 半导体装置以及半导体装置的制造方法 |
US20170179049A1 (en) * | 2015-12-16 | 2017-06-22 | Freescale Semiconductor, Inc. | Power grid balancing apparatus, system and method |
US9842788B2 (en) * | 2015-12-31 | 2017-12-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Underfill control structures and method |
-
2017
- 2017-10-20 WO PCT/JP2017/037968 patent/WO2018074581A1/ja active Application Filing
- 2017-10-20 JP JP2018545765A patent/JP6946316B2/ja active Active
- 2017-10-20 CN CN202310811367.0A patent/CN116960068A/zh active Pending
- 2017-10-20 US US16/330,963 patent/US10910289B2/en active Active
- 2017-10-20 CN CN201780063157.0A patent/CN109804464B/zh active Active
-
2021
- 2021-08-26 JP JP2021137786A patent/JP7379425B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005259725A (ja) | 2004-03-09 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 配線基板および電子部品実装体 |
JP2006140327A (ja) | 2004-11-12 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 配線基板およびこれを用いた電子部品の実装方法 |
JP2006294986A (ja) | 2005-04-13 | 2006-10-26 | Fuji Photo Film Co Ltd | 基板実装構造、及び、カメラモジュール |
JP2008252026A (ja) | 2007-03-30 | 2008-10-16 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2009177061A (ja) | 2008-01-28 | 2009-08-06 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2010087516A (ja) | 2008-09-29 | 2010-04-15 | Samsung Electronics Co Ltd | インクジェット方式のダムを具備する半導体パッケージ及びその製造方法 |
JP2014103198A (ja) | 2012-11-19 | 2014-06-05 | J Devices:Kk | 半導体装置及びその製造方法 |
JP2015023163A (ja) | 2013-07-19 | 2015-02-02 | ソニー株式会社 | 固体撮像装置および固体撮像装置の製造方法。 |
WO2016039173A1 (ja) | 2014-09-11 | 2016-03-17 | ソニー株式会社 | 固体撮像素子、撮像装置、電子機器、および半導体装置 |
JP2016163011A (ja) | 2015-03-05 | 2016-09-05 | ソニー株式会社 | 半導体装置および製造方法、並びに電子機器 |
WO2018074581A1 (ja) | 2016-10-21 | 2018-04-26 | ソニーセミコンダクタソリューションズ株式会社 | 電子基板、および電子装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2018074581A1 (ja) | 2018-04-26 |
CN109804464A (zh) | 2019-05-24 |
US10910289B2 (en) | 2021-02-02 |
JP2021192442A (ja) | 2021-12-16 |
JP6946316B2 (ja) | 2021-10-06 |
CN109804464B (zh) | 2023-07-18 |
US20190259633A1 (en) | 2019-08-22 |
JPWO2018074581A1 (ja) | 2019-08-29 |
CN116960068A (zh) | 2023-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7379425B2 (ja) | 固体撮像装置、および電子装置 | |
US10957029B2 (en) | Image processing device and image processing method | |
US11942494B2 (en) | Imaging device | |
US20230275058A1 (en) | Electronic substrate and electronic apparatus | |
JP7235906B2 (ja) | 固体撮像装置 | |
WO2020184233A1 (ja) | 光源モジュール、測距装置及び制御方法 | |
WO2022249734A1 (ja) | 撮像装置および電子機器 | |
US11605662B2 (en) | Imaging element, imaging device, electronic device, and method of manufacturing imaging element | |
WO2019082559A1 (ja) | 撮像素子および撮像素子の製造方法、並びに、電子機器 | |
WO2022176731A1 (ja) | 半導体装置 | |
WO2024048292A1 (ja) | 光検出素子、撮像装置、及び車両制御システム | |
WO2023229018A1 (ja) | 光検出装置 | |
WO2022097470A1 (ja) | 信号処理装置、撮像装置及び信号処理方法 | |
WO2023248346A1 (ja) | 撮像装置 | |
WO2023188831A1 (ja) | 半導体装置及び半導体装置の製造方法 | |
WO2022209377A1 (ja) | 半導体装置、電子機器及び半導体装置の制御方法 | |
WO2024057471A1 (ja) | 光電変換素子、固体撮像素子、測距システム | |
WO2022196316A1 (ja) | 情報処理装置、情報処理方法及びプログラム | |
WO2024150690A1 (ja) | 固体撮像装置 | |
JP2024073899A (ja) | 撮像素子 | |
JP2023152552A (ja) | 光検出装置 | |
JP2023152551A (ja) | 光検出装置及び電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210827 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230619 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231003 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7379425 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |