JP7377026B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

Info

Publication number: JP7377026B2
Authority: JP; Japan
Prior art keywords: substrate; ozonated water; pressure; water; pressure holding
Prior art date: 2019-08-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2019156360A

Other languages

English (en)

Japanese (ja)

Other versions

JP2021034672A (ja

Inventor

真樹鰍場

僚村元

皓太宗徳

敏光難波

直彦吉原

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Screen Holdings Co Ltd

Original Assignee

Screen Holdings Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-08-29

Filing date

2019-08-29

Publication date

2023-11-09

2019-08-29 Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd

2019-08-29 Priority to JP2019156360A priority Critical patent/JP7377026B2/ja

2020-08-05 Priority to PCT/JP2020/029954 priority patent/WO2021039322A1/ja

2020-08-05 Priority to CN202080061195.4A priority patent/CN114342048A/zh

2020-08-05 Priority to KR1020227006513A priority patent/KR20220039785A/ko

2020-08-14 Priority to TW109127643A priority patent/TWI751651B/zh

2021-03-01 Publication of JP2021034672A publication Critical patent/JP2021034672A/ja

2023-11-09 Application granted granted Critical

2023-11-09 Publication of JP7377026B2 publication Critical patent/JP7377026B2/ja

Status Active legal-status Critical Current

2039-08-29 Anticipated expiration legal-status Critical

Links

239000000758 substrate Substances 0.000 title claims description 204
238000012545 processing Methods 0.000 title claims description 122
238000003672 processing method Methods 0.000 title claims description 33
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 241
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 92
238000010438 heat treatment Methods 0.000 claims description 49
230000002093 peripheral effect Effects 0.000 claims description 4
235000012431 wafers Nutrition 0.000 description 88
230000007246 mechanism Effects 0.000 description 34
238000000034 method Methods 0.000 description 11
230000006870 function Effects 0.000 description 10
230000000694 effects Effects 0.000 description 7
239000007789 gas Substances 0.000 description 7
230000008569 process Effects 0.000 description 6
239000003566 sealing material Substances 0.000 description 6
230000032258 transport Effects 0.000 description 5
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
238000007789 sealing Methods 0.000 description 4
238000003860 storage Methods 0.000 description 4
230000009471 action Effects 0.000 description 3
238000006243 chemical reaction Methods 0.000 description 3
238000004891 communication Methods 0.000 description 3
238000010586 diagram Methods 0.000 description 3
239000007788 liquid Substances 0.000 description 3
239000000463 material Substances 0.000 description 3
230000004048 modification Effects 0.000 description 3
238000012986 modification Methods 0.000 description 3
239000000126 substance Substances 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
230000002411 adverse Effects 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
230000009849 deactivation Effects 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
238000002513 implantation Methods 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
239000005416 organic matter Substances 0.000 description 2
238000003825 pressing Methods 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
239000004809 Teflon Substances 0.000 description 1
229920006362 Teflon® Polymers 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
238000013459 approach Methods 0.000 description 1
239000000969 carrier Substances 0.000 description 1
238000007599 discharging Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
239000013505 freshwater Substances 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
239000011368 organic material Substances 0.000 description 1
239000010453 quartz Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
230000007723 transport mechanism Effects 0.000 description 1
239000002699 waste material Substances 0.000 description 1

Images

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/106—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by boiling the liquid
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Cleaning Or Drying Semiconductors (AREA)
Cleaning By Liquid Or Steam (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP2019156360A 2019-08-29 2019-08-29 基板処理方法および基板処理装置 Active JP7377026B2 (ja)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP2019156360A JP7377026B2 (ja)	2019-08-29	2019-08-29	基板処理方法および基板処理装置
PCT/JP2020/029954 WO2021039322A1 (ja)	2019-08-29	2020-08-05	基板処理方法および基板処理装置
CN202080061195.4A CN114342048A (zh)	2019-08-29	2020-08-05	基板处理方法及基板处理装置
KR1020227006513A KR20220039785A (ko)	2019-08-29	2020-08-05	기판 처리 방법 및 기판 처리 장치
TW109127643A TWI751651B (zh)	2019-08-29	2020-08-14	基板處理方法及基板處理裝置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2019156360A JP7377026B2 (ja)	2019-08-29	2019-08-29	基板処理方法および基板処理装置

Publications (2)

Publication Number	Publication Date
JP2021034672A JP2021034672A (ja)	2021-03-01
JP7377026B2 true JP7377026B2 (ja)	2023-11-09

Family

ID=74677694

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2019156360A Active JP7377026B2 (ja)	2019-08-29	2019-08-29	基板処理方法および基板処理装置

Country Status (5)

Country	Link
JP (1)	JP7377026B2 (zh)
KR (1)	KR20220039785A (zh)
CN (1)	CN114342048A (zh)
TW (1)	TWI751651B (zh)
WO (1)	WO2021039322A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2001077069A (ja)	1999-06-30	2001-03-23	Sony Corp	基板処理方法及び基板処理装置
JP2002261068A (ja)	2001-03-05	2002-09-13	Sony Corp	基板処理装置および基板処理方法
JP2006093473A (ja)	2004-09-24	2006-04-06	M Fsi Kk	基板の洗浄方法及び基板の洗浄装置
JP2006303143A (ja)	2005-04-20	2006-11-02	Seiko Epson Corp	基板の洗浄装置、及び洗浄方法
JP2017175041A (ja)	2016-03-25	2017-09-28	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2008311591A (ja)	2007-06-18	2008-12-25	Sharp Corp	基板処理装置および基板処理方法
JP6371253B2 (ja) *	2014-07-31	2018-08-08	東京エレクトロン株式会社	基板洗浄システム、基板洗浄方法および記憶媒体

2019
- 2019-08-29 JP JP2019156360A patent/JP7377026B2/ja active Active
2020
- 2020-08-05 WO PCT/JP2020/029954 patent/WO2021039322A1/ja active Application Filing
- 2020-08-05 CN CN202080061195.4A patent/CN114342048A/zh active Pending
- 2020-08-05 KR KR1020227006513A patent/KR20220039785A/ko unknown
- 2020-08-14 TW TW109127643A patent/TWI751651B/zh active

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2001077069A (ja)	1999-06-30	2001-03-23	Sony Corp	基板処理方法及び基板処理装置
JP2002261068A (ja)	2001-03-05	2002-09-13	Sony Corp	基板処理装置および基板処理方法
JP2006093473A (ja)	2004-09-24	2006-04-06	M Fsi Kk	基板の洗浄方法及び基板の洗浄装置
JP2006303143A (ja)	2005-04-20	2006-11-02	Seiko Epson Corp	基板の洗浄装置、及び洗浄方法
JP2017175041A (ja)	2016-03-25	2017-09-28	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法

Also Published As

Publication number	Publication date
JP2021034672A (ja)	2021-03-01
WO2021039322A1 (ja)	2021-03-04
CN114342048A (zh)	2022-04-12
TWI751651B (zh)	2022-01-01
KR20220039785A (ko)	2022-03-29
TW202113963A (zh)	2021-04-01

Legal Events

Date	Code	Title	Description
2022-06-17	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220617
2023-05-30	A131	Notification of reasons for refusal	Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230530
2023-07-19	A521	Request for written amendment filed	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230719
2023-09-26	TRDD	Decision of grant or rejection written
2023-10-03	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231003
2023-10-31	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231027
2023-10-31	R150	Certificate of patent or registration of utility model	Ref document number: 7377026 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150

Publication	Publication Date	Title
US9741559B2 (en)	2017-08-22	Film forming method, computer storage medium, and film forming system
KR102090838B1 (ko)	2020-03-18	기판 처리 방법 및 기판 처리 장치
KR101580707B1 (ko)	2015-12-28	액 처리 장치, 액 처리 방법 및 그 액 처리 방법을 실행시키기 위한 프로그램을 기록한 기록 매체
KR102088539B1 (ko)	2020-03-12	기판 처리 방법 및 기판 처리 장치
US20130319476A1 (en)	2013-12-05	Liquid treatment apparatus and liquid treatment method
US20150090694A1 (en)	2015-04-02	Substrate processing device and substrate processing method
KR101864001B1 (ko)	2018-06-01	기판 처리 방법 및 기판 처리 장치
US11862491B2 (en)	2024-01-02	Apparatus and method for treating substrate
JP2012186304A (ja)	2012-09-27	基板処理装置および基板処理方法
JP5090030B2 (ja)	2012-12-05	基板処理装置および基板処理方法
JP2008294453A (ja)	2008-12-04	基板処理方法、基板処理装置およびコンピュータ読み取り可能な記録媒体
US9111970B2 (en)	2015-08-18	Apparatus for the heat treatment of disc shaped substrates
CN117373950A (zh)	2024-01-09	基板处理装置
JP5765985B2 (ja)	2015-08-19	基板処理方法および基板処理装置
KR101432388B1 (ko)	2014-08-20	기판 처리 방법 및 기판 처리 장치
JP7377026B2 (ja)	2023-11-09	基板処理方法および基板処理装置
KR20110057679A (ko)	2011-06-01	아이피에이 공급 장치
KR101870660B1 (ko)	2018-06-26	기판처리장치 및 기판처리방법
KR20130052997A (ko)	2013-05-23	버퍼
JP7341850B2 (ja)	2023-09-11	基板処理方法および基板処理装置
KR102113931B1 (ko)	2020-05-21	기판 처리 방법 및 기판 처리 장치
KR102188352B1 (ko)	2020-12-08	기판 처리 장치
JP7441620B2 (ja)	2024-03-01	基板処理方法
KR20070118485A (ko)	2007-12-17	가스 공급 장치 및 방법
KR20200045161A (ko)	2020-05-04	가이드 핀 및 이를 구비하는 포토 마스크 지지 유닛과 포토 마스크 세정 장치