JP7364997B2 - 窒化物半導体基板 - Google Patents
窒化物半導体基板 Download PDFInfo
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- JP7364997B2 JP7364997B2 JP2019070218A JP2019070218A JP7364997B2 JP 7364997 B2 JP7364997 B2 JP 7364997B2 JP 2019070218 A JP2019070218 A JP 2019070218A JP 2019070218 A JP2019070218 A JP 2019070218A JP 7364997 B2 JP7364997 B2 JP 7364997B2
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- 239000000758 substrate Substances 0.000 title claims description 121
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 150000004767 nitrides Chemical class 0.000 title claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 131
- 229910052710 silicon Inorganic materials 0.000 claims description 131
- 239000010703 silicon Substances 0.000 claims description 131
- 238000000034 method Methods 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 235000012431 wafers Nutrition 0.000 description 54
- 229910002601 GaN Inorganic materials 0.000 description 49
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 230000035882 stress Effects 0.000 description 17
- 238000001816 cooling Methods 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 230000008646 thermal stress Effects 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000004854 X-ray topography Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Description
従来、窒化物半導体基板の製造においては、シリコン結晶と窒化ガリウム結晶の格子定数のミスマッチに伴う歪みとエピタキシャル成長後の冷却時に熱伝導率の違いから生ずる熱歪みを、窒化ガリウム側に形成される窒化アルミ二ウムと窒化ガリウムとそれらの混晶からなるバッファー層によって緩和している。本発明は、上記の2つの種類の歪みをシリコン基板側からも緩和して、前記バッファー層上の窒化ガリウム層の貫通転位密度を低減するとともに、クラックの発生や大きな反りが発生しない窒化ガリウム基板の製造を可能とすることを特徴としている。
非常に低抵抗のシリコンの基板に高抵抗の厚いエピタキシャル膜を成長した場合にミスフィット転位が発生することがある。それを回避するための対策は色々検討されてきているが、本法では、逆に、ミスフィット転位が発生するように基板とエピタキシャル成長の条件を決める必要がある。
シリコン基板として、図1(B)に示したミスフィット転位が発生していないエピタキシャル基板を用いた点以外は、(実施例1)と同様にプロセスを進めて、GaN on Siウエーハを得た。得られたGaN on Siウエーハのうち、GaN層(iGaN層とAlGaN層)をX線回折法で評価した。その結果、(102)面の半値幅は447arcsec、(002)面の半値幅は572arcsecであった。ウエーハの外周部約20mm内にもクラックの発生が見られた。
シリコン基板として、20Ωcmの150mmφのCZ鏡面ウエーハを用いた。それ以外は(実施例1)と同様にプロセスを進めて、GaN on Siウエーハを得た。得られたGaN on Siウエーハのうち、GaN層(iGaN層とAlGaN層)をX線回折法で評価した。その結果、(102)面の半値幅は641arcsec、(002)面の半値幅は502arcsecであった。ウエーハの外周部約20mm内にもクラックの発生が見られた。
12、 シリコン単結晶基板(低抵抗)
13、 ミスフィット転位
14、 ミスフィットが発生したエピタキシャルウエーハの反り
15、 ミスフィット未発生のエピタキシャルウエーハの反り
33、 初期層
34、 AlN層
35、 GaN層
36、 バッファー層
37、 活性(iGaN)層
38、 バリア層
41、 ソース電極
42、 ドレイン電極
43、 ゲート電極
Claims (10)
- シリコン基板の上に窒化物半導体がエピタキシャル成長される半導体基板であって、
前記シリコン基板が、
第1のドーパント濃度を有するシリコン単結晶基板と、
前記シリコン単結晶基板上に形成されるエピタキシャルシリコン層であって、前記第1のドーパント濃度よりも低い第2のドーパント濃度を有する、前記エピタキシャルシリコン層と、
前記シリコン単結晶基板に形成されるミスフィット転位層と、
を有する、半導体基板。 - 請求項1に記載の半導体基板であって、
前記ミスフィット転位層が、前記シリコン単結晶基板と前記エピタキシャルシリコン層との間の界面の下の1.5μm以上の深さにミスフィット転位の最大密度を有する、半導体基板。 - 請求項1に記載の半導体基板であって、
前記第1のドーパント濃度が2~4×10 19 atoms/cm 3 であり、前記第2のドーパント濃度が1~2×10 16 atoms/cm 3 である、半導体基板。 - 請求項1、2又は3に記載の半導体基板を製造する方法であって、
シリコン鏡面ウエーハを前記シリコン単結晶基板として、その主表面上に該シリコン鏡面ウエーハと格子定数の異なるシリコン単結晶薄膜を気相成長させて、格子定数の違いに基づくミスフィット転位を前記シリコン単結晶薄膜との界面に生じさせたエピタキシャルウエーハを製造する工程と、
該エピタキシャルウエーハを前記シリコン基板として、窒化物半導体をエピタキシャル成長する工程と、
を含む、方法。 - シリコン基板の上に窒化物半導体がエピタキシャル成長され、シリコン単結晶基板にミスフィット転位が存在する、半導体基板を製造する方法であって、
シリコン鏡面ウエーハにシリコンエピタキシャル層を気相成長する際に、該シリコンエピタキシャル層と格子定数の異なるエピタキシャル層を挟み込むように成長して、格子定数の違いに基づくミスフィット転位をエピタキシャル層中に生じさせたエピタキシャルウエーハを製造する工程と、
該エピタキシャルウエーハを前記シリコン基板として、窒化物半導体をエピタキシャル成長する工程と、
を含む、方法。 - シリコン基板の上に窒化物半導体がエピタキシャル成長され、シリコン単結晶基板にミスフィット転位が存在する、半導体基板を製造する方法であって、
リン、ボロン、アンチモン、炭素又はゲルマニウムの1種以上を5×10 14 atoms/cm 2 以上のドーズ量で前記シリコン単結晶基板としてのシリコン鏡面ウエーハにイオン注入する工程と、
回復熱処理をする工程と、
前記シリコン鏡面ウエーハにミスフィット転位を生じさせるように前記シリコン鏡面ウエーハにエピタキシャル層をエピタキシャル成長させる工程と、
前記シリコン鏡面ウエーハを前記シリコン基板として、窒化物半導体をエピタキシャル成長させる工程と、
を含む、方法。 - 半導体基板を製造する方法であって、
リン、ボロン、アンチモン、炭素又はゲルマニウムの1つ又はそれ以上を5×10 14 atoms/cm 2 のドーズ量でシリコン鏡面ウエーハにイオン注入することと、
前記シリコン鏡面ウエーハに対して回復熱処理を行うことと、
前記シリコン鏡面ウエーハにミスフィット転位を生じさせるように前記シリコン鏡面ウエーハ上にエピタキシャルシリコン層をエピタキシャル成長させることと、
を含む、方法。 - 半導体装置を形成する方法であって、
シリコンウエーハ上にエピタキシャルシリコン層を形成することであって、前記エピタキシャルシリコン層が前記シリコンウエーハの格子定数と異なる格子定数を有し、前記格子定数における差が前記シリコンウエーハにミスフィット転位の層を生じさせる、前記形成することと、
前記エピタキシャルシリコン層の上に窒化物半導体層をエピタキシャル成長させることと、
を含む、方法。 - 請求項8に記載の方法であって、
前記シリコンウエーハが2~4×10 19 atoms/cm 3 のドーパント濃度を有し、前記エピタキシャルシリコン層が1~2×10 16 atoms/cm 3 のドーパント濃度を有する、方法。 - 請求項8に記載の方法であって、
前記ミスフィット転位の層が、前記シリコンウエーハと前記エピタキシャルシリコン層との間の界面の下の1.5μm以上の深さに位置する、方法。
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