JP7342184B2 - 放射線検出器、放射線画像撮影装置及び放射線検出器の製造方法 - Google Patents
放射線検出器、放射線画像撮影装置及び放射線検出器の製造方法 Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20181—Stacked detectors, e.g. for measuring energy and positional information
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
図1は、開示の技術の実施形態に係る放射線画像撮影装置10の構成の一例を示す斜視図である。放射線画像撮影装置10は、可搬型の電子カセッテの形態を有する。放射線画像撮影装置10は、放射線検出器30(FPD: Flat Panel Detectors)と、制御ユニット12と、支持板16と、放射線検出器30、制御ユニット12及び支持板16を収容する筐体14と、を含んで構成されている。
d=2Z×sinθ ・・・(1)
sinθ=d/2Z ・・・(2)
一方、図4における長さDについて下記の(3)式が成立する。
D=d/2+2r×cosθ=R×sinθ ・・・(3)
また、図4における長さhについて、三平方の定理により下記の(4)式が成立する。
h={Z2-(d/2)2}1/2 ・・・(4)
また、cosθについて下記の(5)式が成立する。
cosθ=h/Z={Z2-(d/2)2}1/2/Z ・・・(5)
(2)式及び(5)式を、(3)式に代入すると、下記の(6)式を導くことができる。
d/2+2r×{Z2-(d/2)2}1/2/Z=R×d/2Z ・・・(6)
(6)式を曲率半径Rについて解くと(7)式が得られる。
R=Z+4r×{Z2-(d/2)2}1/2/d ・・・(7)
ここで、Zについて下記の(8)式が成立し、(8)式を(7)式に代入すると、(9)式が得られる。
Z=L-r/tanΦ ・・・(8)
R=L-r/tanΦ+4r×{(L-r/tanΦ)2-(d/2)2}1/2/d ・・・(9)
R≧L-r/tanΦ+4r×{(L-r/tanΦ)2-(d/2)2}1/2/d ・・・(10)
図8Aは、開示の技術の第2の実施形態に係る放射線検出器30Aの構成の一例を示す断面図である。放射線検出器30Aは、撓み抑制部材60による撓み抑制効果を補強する補強部材70を更に含む点が、第1の実施形態に係る放射線検出器30と異なる。
図12は、開示の技術の第3の実施形態に係る放射線検出器30Bの構成の一例を示す断面図である。放射線検出器30Bは、基板34とシンチレータ32との間に設けられた緩衝層90を有する。緩衝層90は、基板34の熱膨張率とシンチレータ32の熱膨張率との間の熱膨張率を有する。緩衝層90として、例えば、ポリイミド膜及びパリレン膜を用いることができる。基板34の材料として、XENOMAX(登録商標)を用いた場合には、基板34として例えばガラス基板を用いた場合と比較して、基板34とシンチレータ32との間の熱膨張率の差が大きくなり、基板34とシンチレータ32との界面に作用する熱応力が過大となる。基板34とシンチレータ32との間に緩衝層90を設けることで、基板34とシンチレータ32との界面に作用する熱応力を抑制することが可能となる。
図13~図33は、それぞれ、撓み抑制部材60がシンチレータ32の基板34と接する面とは反対側の面の側に積層された場合における、撓み抑制部材60の設置形態の例を示す断面図である。図13~図33において、基板34上の複数の画素41が設けられた領域である画素領域41Aが示されている。
R≧L-r/tanΦ+4r×{(L-r/tanΦ) 2 -(d/2) 2 } 1/2 /d
を満たす剛性を、撓み抑制部材が有する。
R≧L-r/tanΦ+4r×{(L-r/tanΦ) 2 -(d/2) 2 } 1/2 /d
を満たす剛性を、撓み抑制部材が有する。
12 制御ユニット
14 筐体
15 放射線入射面
16 支持板
18 接着層
19 回路基板
20 COF
22 ゲート線駆動部
24 チャージアンプ
26 信号処理部
28 画像メモリ
29 制御部
30、30A 放射線検出器
32 シンチレータ
32a 柱状結晶
32b 非柱状部
32E 端部
34 基板
36 光電変換素子
41 画素
42 TFT
43 ゲート線
44 信号線
50 反射膜
60 撓み抑制部材
70 補強部材
L 接線
R 曲率半径
S1 第1の面
S2 第2の面
S3、S4、S5、S6 面
R 曲率半径
L 柱状結晶の高さの平均値
Z 柱状結晶の先端部を除く高さの平均値
r 柱状結晶の半径の平均値
Φ 柱状結晶の先端部の角度の平均値
d 柱状結晶同士の間隔の平均値
θ 柱状結晶の傾斜角
Claims (10)
- 可撓性を有する基板と、
前記基板に設けられ、光電変換素子をそれぞれ含む複数の画素と、
前記基板に積層されたシンチレータと、
前記基板の撓みを抑制する撓み抑制部材と、
を含み、
前記撓み抑制部材は、前記シンチレータ側または前記基板側と密着する接合面と、前記シンチレータ側または前記基板側との前記接合面における空気を排出する機構を持つことを特徴とする放射線検出器。 - 可撓性を有する基板と、
前記基板に設けられ、光電変換素子をそれぞれ含む複数の画素と、
前記基板に積層されたシンチレータと、
前記基板の撓みを抑制する撓み抑制部材と、
を含み、
前記撓み抑制部材は、前記シンチレータ側または前記基板側との接合面における空気を排出する機構として、複数の貫通孔をその主面に有していることを特徴とする放射線検出器。 - 前記貫通孔の大きさ及びピッチは、前記撓み抑制部材において所望の剛性が得られるように定められることを特徴とする請求項2に記載の放射線検出器。
- 前記シンチレータは、複数の柱状結晶を有し、
前記撓み抑制部材の前記所望の剛性は、
前記柱状結晶の高さの平均値をL、前記柱状結晶の半径の平均値をr、前記柱状結晶同士の間隔の平均値をd、前記柱状結晶の先端部の角度の平均値をΦ、前記シンチレータの重量によって前記基板に生じる撓みの当該基板の任意の位置における曲率半径をRとしたとき、
R≧L-r/tanΦ+4r×{(L-r/tanΦ)2-(d/2)2}1/2/d
を満たすように定められることを特徴とする請求項3に記載の放射線検出器。 - 可撓性を有する基板と、
前記基板に設けられ、光電変換素子をそれぞれ含む複数の画素と、
前記基板に積層されたシンチレータと、
前記基板の撓みを抑制する撓み抑制部材と、
を含み、
前記撓み抑制部材は、前記シンチレータ側または前記基板側との接合面における空気を排出する凹凸構造を有し、前記凹凸構造は、互いに平行に配置された複数の溝を含んで構成されることを特徴とする放射線検出器。 - 前記撓み抑制部材は、複数の断片に分断されていることを特徴とする請求項1に記載の放射線検出器。
- 前記撓み抑制部材は、前記複数の断片が、前記撓み抑制部材の平面方向における一方向に配列するように分断されていることを特徴とする請求項6に記載の放射線検出器。
- 前記撓み抑制部材は、前記複数の断片が、前記撓み抑制部材の平面方向における一方向と、当該一方向と直交する方向とに配列するように分断されていることを特徴とする請求項6に記載の放射線検出器。
- 前記基板の、前記シンチレータが積層された面とは反対側の面に前記撓み抑制部材が積層されていることを特徴とする請求項1~請求項8のいずれか1項に記載の放射線検出器。
- 前記シンチレータの、前記基板と接する面とは反対側の面に前記撓み抑制部材が積層されていることを特徴とする請求項1~請求項9のいずれか1項に記載の放射線検出器。
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