JP7336606B2 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- JP7336606B2 JP7336606B2 JP2022565098A JP2022565098A JP7336606B2 JP 7336606 B2 JP7336606 B2 JP 7336606B2 JP 2022565098 A JP2022565098 A JP 2022565098A JP 2022565098 A JP2022565098 A JP 2022565098A JP 7336606 B2 JP7336606 B2 JP 7336606B2
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- 239000004065 semiconductor Substances 0.000 title claims description 406
- 150000004767 nitrides Chemical class 0.000 title claims description 319
- 239000012535 impurity Substances 0.000 claims description 55
- 238000002161 passivation Methods 0.000 claims description 25
- 238000000926 separation method Methods 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 description 199
- 239000000463 material Substances 0.000 description 49
- 238000005530 etching Methods 0.000 description 43
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 36
- 238000000034 method Methods 0.000 description 35
- 229910002601 GaN Inorganic materials 0.000 description 34
- 230000008569 process Effects 0.000 description 28
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- 239000000758 substrate Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229910002704 AlGaN Inorganic materials 0.000 description 17
- 239000010409 thin film Substances 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 14
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- 239000011701 zinc Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000004574 scanning tunneling microscopy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
コラプスファクターCFは、CFが小さいほど電流コラプスが小さいことを示す指標である。
2 基板
3 バッファ層
4 第1窒化物半導体層
5 第2窒化物半導体層
6 第3窒化物半導体層
7 ゲート電極
7A ゲート主電極部
7B ベース部
8 パッシベーション膜
9 ソースコンタクトホール(第1開口部)
10 ドレインコンタクトホール(第2開口部)
11 ソース電極
11A ソース主電極部
11B ソースフィールドプレート部
11C ソースフィールドプレート部のドレイン電極側端
12 ドレイン電極
13 二次元電子ガス
20 ゲート部
51 第1部分
52 第2部分
61 リッジ部
62 ソース側延長部(第1延長部)
63 ドレイン側延長部(2延長部)
62A,62G,63A,63G テーパ部
62B,63B 平坦部
62C,63C 第1平坦部
62D,63D 第2平坦部
62E,63E 切り欠き
63F 孔
64 連結部
65 接続用延長部
66 第4延長部
67 第5延長部
68 離間部
68A,68B 離間部
71 第3半導体材料膜
72 ゲート電極膜
73 第1絶縁膜
74,77 第2絶縁膜
75 第3絶縁膜
76 ソース・ドレイン電極膜
82 ソース側薄膜部
83 ドレイン側薄膜部
82A,83A テーパ部
82B,83B 平坦部
91 厚膜部
92 薄膜部
106 第3窒化物半導体層
106A 第1半導体領域
106B 第2半導体領域
Claims (21)
- 電子走行層を構成する第1窒化物半導体層と、
前記第1窒化物半導体層の上方に形成され、前記第1窒化物半導体層よりもバンドギャップが大きく、電子供給層を構成する第2窒化物半導体層と、
前記第2窒化物半導体層の上方に選択的に形成され、リッジ形状のリッジ部を含み、アクセプタ型不純物を含む第3窒化物半導体層と、
前記リッジ部の上方に形成されたゲート電極と、
前記第2窒化物半導体層、前記第3窒化物半導体層および前記ゲート電極上に配置され、前記リッジ部を挟んで配置された第1開口部および第2開口部を有するパッシベーション膜と、
前記第1開口部を介して前記第2窒化物半導体層に接し、一部が前記パッシベーション膜の上方に形成されたソース電極と、
前記第2開口部を介して前記第2窒化物半導体層に接し、前記リッジ部を挟んで前記ソース電極と対向するように、一部が前記パッシベーション膜の上方に形成されたドレイン電極とを含み、
前記第3窒化物半導体層は、前記第1開口部の前記リッジ部側端と前記リッジ部の前記第1開口部端との間および前記ドレイン電極の前記リッジ部側端と前記リッジ部の前記第2開口部端との間それぞれに、前記リッジ部の前記第1開口部側の側面および前記リッジ部の前記第2開口部側の側面の厚さ中間位置の下側部分から外方に延びた延長部を有しており、
前記延長部は、前記リッジ部の前記第1開口部側の側面から前記第1開口部に向かって延びた第1延長部と、前記リッジ部の前記第2開口部側の側面から前記第2開口部に向かって延びた第2延長部とを含み、
前記第1延長部または前記第2延長部が、前記リッジ部との接合部に第1テーパ部を有しており、前記第2窒化物半導体層の表面に対する前記第1テーパ部のテーパ角が45度以下である、窒化物半導体装置。 - 前記ソース電極が、前記ゲート電極の一部を覆うように、前記パッシベーション膜の上方に形成されており、
前記ソース電極の前記第2開口部側端は、平面視において、前記リッジ部と前記第2開口部との間に位置しており、
前記第1延長部および前記第2延長部のうちの少なくとも一方は、前記第1開口部の前記リッジ部側端と前記ソース電極の前記第2開口部端との間に配置されている、請求項1に記載の窒化物半導体装置。 - 前記第1延長部の長さが、前記リッジ部の幅の0.3倍以上0.9倍以下であり、前記第2延長部の長さが、前記リッジ部の幅の0.7倍以上2.0倍以下である、請求項1または2に記載の窒化物半導体装置。
- 前記第1延長部と前記第2延長部との、前記リッジ部の断面の幅方向の長さが互いに異なる、請求項1または2に記載の窒化物半導体装置。
- 前記第2延長部の前記リッジ部の断面の幅方向の長さが、前記第1延長部の前記リッジ部の断面の幅方向の長さよりも長い、請求項4に記載の窒化物半導体装置。
- 前記延長部の前記アクセプタ型不純物の平均濃度が、前記リッジ部の前記アクセプタ型不純物の平均濃度よりも低い、請求項1~5のいずれか一項に記載の窒化物半導体装置。
- 前記延長部には、実質的に前記アクセプタ型不純物が含まれていない、請求項1~6のいずれか一項に記載の窒化物半導体装置。
- 前記延長部の膜厚が、25nm以下である、請求項1~7のいずれか一項に記載の窒化物半導体装置。
- 前記延長部の膜厚が、15nm以下である、請求項1~7のいずれか一項に記載の窒化物半導体装置。
- 前記延長部の膜厚が、3nm以上である、請求項8または9に記載の窒化物半導体装置。
- 前記延長部の膜厚が、前記リッジ部の膜厚の1/5以下である、請求項1~7のいずれか一項に記載の窒化物半導体装置。
- 前記延長部の膜厚が、前記リッジ部の膜厚の1/7以下である、請求項1~7のいずれか一項に記載の窒化物半導体装置。
- 前記第1延長部または前記第2延長部が、先端部に第2テーパ部を有しており、前記第2窒化物半導体層の表面に対する前記第2テーパ部のテーパ角が30度以上80度以下である、請求項1~12のいずれか一項に記載の窒化物半導体装置。
- 前記第3窒化物半導体層は、前記リッジ部および前記延長部に接触せず、かつ膜厚が前記延長部とほぼ等しい離間部を有する、請求項1~13のいずれか一項に記載の窒化物半導体装置。
- 前記離間部が、前記ソース電極に接するソース側離間部と、前記ドレイン電極に接するドレイン側離間部とを含む、請求項14に記載の窒化物半導体装置。
- 前記延長部に、前記第2窒化物半導体層の表面を露出させる第3開口部が形成されている、請求項1~13のいずれか一項に記載の窒化物半導体装置。
- 前記第1窒化物半導体層がGaN層からなり、
前記第2窒化物半導体層がAlxGa(1-x)N(0.1>x>0.3)層からなり、
前記第3窒化物半導体層がp型GaN層からなり、
前記アクセプタ型不純物がMgまたはZnからなる、請求項1~16のいずれか一項に記載の窒化物半導体装置。 - 前記第3窒化物半導体層の下面から上方Xnmまでの領域を下層部とし、前記第3窒化物半導体層の上面から前記下層部の上面までの領域を上層部とし、前記上層部の厚さをYnmとすると、
前記下層部の平均アクセプタ濃度が1×1019cm-3以下でありかつ前記上層部の平均アクセプタ濃度が1×1019cm-3よりも大きいという第1条件と、
5nm≦X≦40nmかつ70nm≦Y≦145nmかつ100nm≦X+Y≦150nmという第2条件とを満たす、請求項1~17のいずれか一項に記載の窒化物半導体装置。 - 前記第3窒化物半導体層は、少なくとも、バンドギャップが異なる第1半導体領域と第2半導体領域とから構成され、前記延長部は前記第1半導体領域を含んでいる、請求項1~16のいずれか一項に記載の窒化物半導体装置。
- 前記第1半導体領域のバンドギャップは、前記第2半導体領域のバンドギャップよりも大きい、請求項19に記載の窒化物半導体装置。
- 前記第1半導体領域はAlvGa1-vNで構成され、
前記第2半導体領域はAlwGa1-wNで構成され、
v>w≧0である、請求項19に記載の窒化物半導体装置。
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