JP7330382B2 - 複合基板 - Google Patents
複合基板 Download PDFInfo
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- JP7330382B2 JP7330382B2 JP2022533204A JP2022533204A JP7330382B2 JP 7330382 B2 JP7330382 B2 JP 7330382B2 JP 2022533204 A JP2022533204 A JP 2022533204A JP 2022533204 A JP2022533204 A JP 2022533204A JP 7330382 B2 JP7330382 B2 JP 7330382B2
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- 239000000758 substrate Substances 0.000 title claims description 108
- 239000002131 composite material Substances 0.000 title claims description 61
- 239000000919 ceramic Substances 0.000 claims description 90
- 238000005219 brazing Methods 0.000 claims description 87
- 239000000463 material Substances 0.000 claims description 75
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 31
- 229910052709 silver Inorganic materials 0.000 claims description 31
- 239000004332 silver Substances 0.000 claims description 31
- 239000010949 copper Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000011135 tin Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 description 99
- 239000002184 metal Substances 0.000 description 99
- 238000010438 heat treatment Methods 0.000 description 84
- 239000000945 filler Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 18
- 239000011230 binding agent Substances 0.000 description 13
- 238000005245 sintering Methods 0.000 description 13
- 150000002739 metals Chemical class 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000002585 base Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
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- 229920005989 resin Polymers 0.000 description 8
- 238000005238 degreasing Methods 0.000 description 6
- 150000002484 inorganic compounds Chemical class 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000004014 plasticizer Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 150000004673 fluoride salts Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 229910001960 metal nitrate Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- VJHINFRRDQUWOJ-UHFFFAOYSA-N dioctyl sebacate Chemical compound CCCCC(CC)COC(=O)CCCCCCCCC(=O)OCC(CC)CCCC VJHINFRRDQUWOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- -1 sintering aid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/02—Details
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Description
[複合基板の作製]
厚さ0.32mmの窒化ケイ素製のセラミックス板、厚さ0.3mmの第一銅板、及び厚さ0.25mmの第二銅板を準備した。セラミックス板の両面の所定箇所にろう材aを塗布した。
第二の加熱処理工程における加熱温度を840℃に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
ろう材としてろう材bを用い、第二の加熱処理工程における加熱温度を800℃に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
ろう材としてろう材cを用い、第二の加熱処理工程における加熱温度を800℃に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
第二の加熱処理工程における加熱温度を800℃に、加熱時間を5分間に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
第二の加熱処理工程における加熱温度を800℃に、加熱時間を90分間に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
第二の加熱処理工程における加熱温度を860℃に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
第二の加熱処理工程における加熱温度を750℃に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
第二の加熱処理工程における加熱温度を800℃に、加熱時間を180分間に変更したこと以外は、実施例1と同様にして、複合基板を作製した。
実施例1~6及び比較例1~3で作製した複合基板のそれぞれについて、所定位置におけるビッカース硬さを測定し、ビッカース硬さX、Y及びY/Xの値を決定した。具体的には、複合基板を切断後、樹脂に包埋し、断面を研磨して測定用試料を作製した。この測定用試料における金属板の表面へダイヤモンドの圧子を押し込み、その試験力を解除した後、表面に残ったくぼみの対角線長さを測長し、測定対象のビッカース硬さを算出した。結果を表2及び表3に示す。
実施例及び比較例で得られた複合基板について、引きはがし強度を測定し、接合強度を評価した。具体的には、複合基板に接合された銅回路パターンの一部である幅5mmのパターンの端をペンチで引き剥がした。この複合基板を引張試験機の台に固定し、上記パターンの端をプル試験機のチャックに取り付けた。この時、セラミックス板の表面と引き剥がされた上記銅回路パターンの角度が90°(鉛直方向)になるように設置した。その後、引張試験機を作動させ、チャックを介して引き剥がされた上記パターンを上方に引っ張って移動させ、その時の最大引き剥がし荷重を測定した。その最大引き剥がし荷重を幅(0.5cm)で除して引きはがし強度を算出した。試験後、はく離面を目視で観察し、以下の基準で接合強度を評価した。結果を表2及び表3に示す。
A:引きはがし強度が100N/cm以上である。
B:引きはがし強度が80N/cm以上100N/cm未満である。
C:引きはがし強度が40N/cm以上80N/cm未満である。
D:引きはがし強度が40N/cm未満である。
実施例及び比較例で得られた複合基板について、JIS C 60068-2-14:2011「環境試験方法-電気・電子-第2―14部:温度変化試験方法(試験記号:N)」に記載の方法に準拠して、ヒートサイクル特性を評価した。具体的には、-40℃で15分間維持し、その後150℃で15分間維持することを1サイクルとして、2000回のヒートサイクル試験を行った。試験後、塩化銅液、及びフッ化アンモニウム/過酸化水素エッチングを用いて、銅板及びろう材層をはく離し、セラミックス板表面のクラックを画像解析ソフトGIMP2にて二値化(閾値140)し、上記クラックの面積を算出した後、クラック面積/回路パターンの面積の値を算出してクラック率を決定した。結果を表2及び表3に示す。
A:クラック率が1%未満である。
B:クラック率が1%以上5%未満である。
C:クラック率が5%以上である。
Claims (3)
- セラミックス板と、銀、銅、スズ、及びチタンを含有するろう材層を介して前記セラミックス板上に接合された銅板とを有し、
前記ろう材層におけるチタンの含有量が、銀の含有量100質量部に対して、6.0質量部以下であり、
前記ろう材層の厚みが18μm以下であり、
前記セラミックス板から前記銅板に向かって20μmの位置におけるビッカース硬さをXとし、前記セラミックス板から前記銅板に向かって70μmの位置におけるビッカース硬さをYとしたときに、前記Xが70~110HVであり、前記Xに対する前記Yの比が0.92以下である、複合基板。 - 前記Xに対する前記Yの比が0.50以上である、請求項1に記載の複合基板。
- 前記セラミックス板が窒化ケイ素を含有する、請求項1又は2に記載の複合基板。
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JP2006128286A (ja) | 2004-10-27 | 2006-05-18 | Kyocera Corp | 金属セラミック複合体とその接合方法およびこれを用いた放熱基板 |
JP2011199315A (ja) | 2011-06-17 | 2011-10-06 | Dowa Holdings Co Ltd | 金属−セラミックス接合基板 |
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