JP7325981B2 - 積層体、これを用いた圧電デバイス、及び圧電デバイスの製造方法 - Google Patents
積層体、これを用いた圧電デバイス、及び圧電デバイスの製造方法 Download PDFInfo
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/025—Electric or magnetic properties
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
高分子の基材と、
前記基材の第1の面に形成された圧電体層と、
積層方向で前記圧電体層の上部と下部に配置される一対の電極と、
を有し、前記基材の前記第1の面の表面粗さは、算術平均粗さ(Ra)で3nm以下である。
図1は、第1実施形態の積層体10の模式図である。積層体10は、高分子の基材11と、基材11の一方の表面に配置される結晶性の機能層12を有する。機能層12は、圧力に応じた分極を生じさせる圧電体層、温度によってヒステリシス特性が変化する感温磁性膜、触媒作用を有する結晶性のナノポーラス金属酸化膜など、特定の機能を有する層である。
図6は、第2実施形態の積層体30の模式図である。積層体30は、高分子の基材11と、積層方向で基材11の上に配置される非晶質層33と、非晶質層33の上に配置される結晶性の機能層12を有する。
図8は、第3実施形態の積層体30bと、これを用いた圧電デバイス50の模式図である。積層体30bは、高分子の基材11と、積層方向で基材11の上に配置される非晶質層33bと、非晶質層33bの上に配置される第1の電極層13と、第1の電極層13の上に配置される圧電体層12aを有する。圧電体層12aは、結晶性の機能層12の一例であり、その膜厚は、50~200nmである。
11 基材
12 機能層
12a 圧電体層
13 第1の電極層
14 第2の電極層
16 高分子フィルム
20A~20C、40、50 圧電デバイス
33 非晶質層
Claims (8)
- 高分子の基材と、
前記基材の第1の面に形成された圧電体層と、
積層方向で前記圧電体層の上部と下部に配置される一対の電極と、
を有し、前記基材の未コーティングの前記第1の面の表面粗さは、算術平均粗さ(Ra)で0.5nm以上3nm以下であり、
前記基材の前記第1の面と前記圧電体層は連続しており、前記基材の前記第1の面と反対側の面に前記一対の電極の一方の電極が設けられ、前記圧電体層の前記第1の面と連続する面と反対側の面に前記一対の電極の他方の電極が設けられていることを特徴とする圧電デバイス。 - 前記一対の電極のうち、前記基材の前記第1の面と反対側の面に設けられる前記一方の電極は、前記圧電体層の下部に配置される下部電極であり、前記下部電極は、導電性の非晶質層であることを特徴とする請求項1に記載の圧電デバイス。
- 前記非晶質層は、酸化物導電体または導電性有機物で形成されていることを特徴とする請求項2に記載の圧電デバイス。
- 前記非晶質層は、無機物、有機物、または無機物と有機物の混合物により形成されていることを特徴とする請求項2に記載の圧電デバイス。
- 前記基材の厚さは、20~200μmであることを特徴とする請求項1から4のいずれか1項に記載の圧電デバイス。
- 前記圧電体層の厚さは、50nm~2μmであることを特徴とする請求項1から5のいずれか1項に記載の圧電デバイス。
- 未コーティングの第1の面の表面粗さが算術平均粗さ(Ra)で0.5nm以上3nm以下である高分子基材の前記第1の面の上に前記第1の面と連続して圧電体層を形成し、
前記高分子基材の前記第1の面と反対側の面に一対の電極の一方を設け、前記圧電体層の前記第1の面と連続する面と反対側の面に前記一対の電極の他方を設ける、
ことを特徴とする圧電デバイスの製造方法。 - 前記高分子基材の前記第1の面と反対側の面に設けられる前記一方の電極として非晶質層を形成し、
前記非晶質層を下部電極とすることを特徴とする請求項7に記載の圧電デバイスの製造方法。
Priority Applications (6)
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JP2019052877A JP7325981B2 (ja) | 2019-03-20 | 2019-03-20 | 積層体、これを用いた圧電デバイス、及び圧電デバイスの製造方法 |
KR1020217029141A KR20210125554A (ko) | 2019-03-20 | 2020-03-10 | 적층체, 이를 이용한 압전 디바이스 및 압전 디바이스 제조방법 |
US17/439,806 US20220181542A1 (en) | 2019-03-20 | 2020-03-10 | Layered structure, piezoelectric device using the same, and method of manufacturing piezoelectric device |
PCT/JP2020/010177 WO2020189397A1 (ja) | 2019-03-20 | 2020-03-10 | 積層体、これを用いた圧電デバイス、及び圧電デバイスの製造方法 |
EP20772561.5A EP3943292B1 (en) | 2019-03-20 | 2020-03-10 | Laminated piezoelectric device, and a method for manufacturing the piezoelectric device |
CN202080021114.8A CN113573897B (zh) | 2019-03-20 | 2020-03-10 | 层叠体、使用了该层叠体的压电器件及压电器件的制造方法 |
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EP (1) | EP3943292B1 (ja) |
JP (1) | JP7325981B2 (ja) |
KR (1) | KR20210125554A (ja) |
CN (1) | CN113573897B (ja) |
WO (1) | WO2020189397A1 (ja) |
Citations (4)
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JP2018046277A (ja) | 2016-09-13 | 2018-03-22 | 東ソー株式会社 | 窒化ガリウム系膜ならびにその製造方法 |
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