JP7321820B2 - 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP7321820B2 JP7321820B2 JP2019143401A JP2019143401A JP7321820B2 JP 7321820 B2 JP7321820 B2 JP 7321820B2 JP 2019143401 A JP2019143401 A JP 2019143401A JP 2019143401 A JP2019143401 A JP 2019143401A JP 7321820 B2 JP7321820 B2 JP 7321820B2
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- 239000004065 semiconductor Substances 0.000 title claims description 108
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 143
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 142
- 239000010410 layer Substances 0.000 claims description 109
- 239000012535 impurity Substances 0.000 claims description 60
- 239000011229 interlayer Substances 0.000 claims description 18
- 230000005684 electric field Effects 0.000 description 44
- 210000000746 body region Anatomy 0.000 description 27
- 238000000034 method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000002040 relaxant effect Effects 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum ions Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- B60L13/00—Electric propulsion for monorail vehicles, suspension vehicles or rack railways; Magnetic suspension or levitation for vehicles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B66—HOISTING; LIFTING; HAULING
- B66B—ELEVATORS; ESCALATORS OR MOVING WALKWAYS
- B66B1/00—Control systems of elevators in general
- B66B1/24—Control systems with regulation, i.e. with retroactive action, for influencing travelling speed, acceleration, or deceleration
- B66B1/28—Control systems with regulation, i.e. with retroactive action, for influencing travelling speed, acceleration, or deceleration electrical
- B66B1/30—Control systems with regulation, i.e. with retroactive action, for influencing travelling speed, acceleration, or deceleration electrical effective on driving gear, e.g. acting on power electronics, on inverter or rectifier controlled motor
- B66B1/308—Control systems with regulation, i.e. with retroactive action, for influencing travelling speed, acceleration, or deceleration electrical effective on driving gear, e.g. acting on power electronics, on inverter or rectifier controlled motor with AC powered elevator drive
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
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Description
第1の実施形態の半導体装置は、第1の方向及び第1の方向に交差する第2の方向に平行な第1の面と、第1の方向及び第2の方向に平行で第1の面に対向する第2の面と、を有する炭化珪素層であって、第1の面の側に位置し、第1の領域と第2の領域とを有するトレンチと、n型の第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に位置するp型の第2の炭化珪素領域と、第2の炭化珪素領域と第1の面との間に位置するn型の第3の炭化珪素領域と、第2の領域と第1の炭化珪素領域との間に位置し、第2の炭化珪素領域よりもp型不純物濃度の高いp型の第4の炭化珪素領域と、を有する炭化珪素層と、第1の領域の中に位置するゲート電極と、ゲート電極と炭化珪素層との間に位置するゲート絶縁層と、炭化珪素層の第1の面の側に位置し、一部が第2の領域の中に位置し、一部が第3の炭化珪素領域及び第4の炭化珪素領域と接する第1の電極と、炭化珪素層の第2の面の側に位置する第2の電極と、を備える。
第2の実施形態の半導体装置は、p+型のゲートトレンチ底部領域34(第5の炭化珪素領域)を有さない点で、第1の実施形態の半導体装置と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、ゲートトレンチ領域22x(第1の領域)とコンタクトトレンチ領域22y(第2の領域)のパターンが、第1の実施形態の半導体装置のパターンと反転している点で、第1の実施形態の半導体装置と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態の半導体装置は、トレンチが、第1の面において、第1の方向と第2の方向に交差する格子形状を有する点で、第1の実施形態の半導体装置と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第5の実施形態の半導体装置は、ゲートトレンチ領域22x(第1の領域)とコンタクトトレンチ領域22y(第2の領域)のパターンが、第4の実施形態の半導体装置のパターンと反転している点で、第4の実施形態の半導体装置と異なっている。以下、第1又は第4の実施形態と重複する内容については、一部記述を省略する。
第6の実施形態のインバータ回路及び駆動装置は、第1の実施形態の半導体装置を備える駆動装置である。
第7の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第8の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第9の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
12 ソース電極(第1の電極)
12a コンタクト領域(一部)
14 ドレイン電極(第2の電極)
16 ゲート電極
18 ゲート絶縁層
20 層間絶縁層
22 トレンチ
22x ゲートトレンチ領域(第1の領域)
22y コンタクトトレンチ領域(第2の領域)
26 ドリフト領域(第1の炭化珪素領域)
28 ボディ領域(第2の炭化珪素領域)
30 ソース領域(第3の炭化珪素領域)
32 電界緩和領域(第4の炭化珪素領域)
34 ゲートトレンチ底部領域(第5の炭化珪素領域)
100 MOSFET(半導体装置)
150 インバータ回路
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
400 MOSFET(半導体装置)
500 MOSFET(半導体装置)
1000 駆動装置
1100 車両
1200 車両
1300 昇降機
P1 第1の面
P2 第2の面
Claims (13)
- 第1の方向及び前記第1の方向に交差する第2の方向に平行な第1の面と、前記第1の方向及び前記第2の方向に平行で前記第1の面に対向する第2の面と、を有する炭化珪素層であって、
前記第1の面の側に位置し、第1の領域と第2の領域とを有するトレンチと、
n型の第1の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に位置するp型の第2の炭化珪素領域と、
前記第2の炭化珪素領域と前記第1の面との間に位置するn型の第3の炭化珪素領域と、
前記第2の領域と前記第1の炭化珪素領域との間に位置し、前記第2の炭化珪素領域よりもp型不純物濃度の高いp型の第4の炭化珪素領域と、
を有する炭化珪素層と、
前記第1の領域の中に位置するゲート電極と、
前記ゲート電極と前記炭化珪素層との間に位置するゲート絶縁層と、
前記炭化珪素層の前記第1の面の側に位置し、一部が前記第2の領域の中に位置し、前記一部が前記第3の炭化珪素領域及び前記第4の炭化珪素領域と接する第1の電極と、
前記炭化珪素層の前記第2の面の側に位置する第2の電極と、
を備え、
前記第1の領域と前記第2の領域は連続する、半導体装置。 - 前記第1の領域の少なくとも一部が前記第1の方向に延び、前記第2の領域の少なくとも一部が前記第1の方向に延び、
前記第1の領域の少なくとも一部と前記第2の領域の少なくとも一部との間に前記第2の炭化珪素領域が位置する請求項1記載の半導体装置。 - 前記トレンチは、前記第1の面において、前記第1の方向と前記第2の方向に交差する格子形状を有する請求項1又は請求項2記載の半導体装置。
- 前記第4の炭化珪素領域は、前記第2の領域と前記第2の炭化珪素領域との間に位置する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 第1の方向及び前記第1の方向に交差する第2の方向に平行な第1の面と、前記第1の方向及び前記第2の方向に平行で前記第1の面に対向する第2の面と、を有する炭化珪素層であって、
前記第1の面の側に位置し、第1の領域と第2の領域とを有するトレンチと、
n型の第1の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に位置するp型の第2の炭化珪素領域と、
前記第2の炭化珪素領域と前記第1の面との間に位置するn型の第3の炭化珪素領域と、
前記第2の領域と前記第1の炭化珪素領域との間に位置し、前記第2の炭化珪素領域よりもp型不純物濃度の高いp型の第4の炭化珪素領域と、
を有する炭化珪素層と、
前記第1の領域の中に位置するゲート電極と、
前記ゲート電極と前記炭化珪素層との間に位置するゲート絶縁層と、
前記炭化珪素層の前記第1の面の側に位置し、一部が前記第2の領域の中に位置し、前記一部が前記第3の炭化珪素領域及び前記第4の炭化珪素領域と接する第1の電極と、
前記炭化珪素層の前記第2の面の側に位置する第2の電極と、
を備え、
前記炭化珪素層は、前記第1の領域と前記第1の炭化珪素領域との間に位置し、前記第2の炭化珪素領域よりもp型不純物濃度が高く、前記第4の炭化珪素領域に接するp型の第5の炭化珪素領域を有する、半導体装置。 - 前記第2の面と前記第5の炭化珪素領域との間の距離は、前記第2の面と前記第4の炭化珪素領域との間の距離よりも長い請求項5記載の半導体装置。
- 前記第5の炭化珪素領域のp型不純物濃度は、前記第4の炭化珪素領域のp型不純物濃度よりも低い請求項5又は請求項6記載の半導体装置。
- 前記トレンチの中に、前記ゲート電極と前記第1の電極の前記一部との間に位置し、前記ゲート絶縁層の厚さよりも厚い層間絶縁層を、更に備える請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記第2の面と前記第1の領域との間の距離と、前記第2の面と前記第2の領域との間の距離は略同一である請求項1ないし請求項8いずれか一項記載の半導体装置。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項9いずれか一項記載の半導体装置を備える昇降機。
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