JP7313894B2 - 配線基板及び配線基板の製造方法 - Google Patents
配線基板及び配線基板の製造方法 Download PDFInfo
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- JP7313894B2 JP7313894B2 JP2019085970A JP2019085970A JP7313894B2 JP 7313894 B2 JP7313894 B2 JP 7313894B2 JP 2019085970 A JP2019085970 A JP 2019085970A JP 2019085970 A JP2019085970 A JP 2019085970A JP 7313894 B2 JP7313894 B2 JP 7313894B2
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- metal layer
- opening
- layer
- wiring board
- metal
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
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- -1 amine compound Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/341—Surface mounted components
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Landscapes
- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
硫酸銅: 100~200g/L
硫酸: 100~200g/L
塩化物イオン: 1~20ppm
ポリマー(抑制剤): 1~10mL/L
ブライトナー(促進剤): 1.0~5.0mL/L
レベラー: 0.1~3.0mL/L
110 コア基板
111 基材
112 ビア
113、122 配線層
120 多層配線構造
121 絶縁層
130、140 ソルダーレジスト層
131、132、141 開口部
150、160 バンプ
151、161 第1金属層
152、162 第2金属層
161a、162a 凹部
170 はんだボール
Claims (14)
- 配線層と、
前記配線層を被覆するとともに、前記配線層まで貫通する第1開口部及び前記第1開口部よりも大径の第2開口部を備える絶縁層と、
前記第1開口部及び前記第2開口部に形成され、前記第1開口部よりも前記第2開口部において深い凹部を有する第1金属層と、
前記第1金属層に重ねて形成され、前記第2開口部において一部が前記第1金属層の凹部に格納される第2金属層と、
前記第1金属層と前記第2金属層との間に介在し、前記第2金属層よりも融点が高い第3金属層と
を有し、
前記第1金属層の凹部は、
前記第2開口部において前記絶縁層の表面よりも前記配線層に近づく底面を有し、
前記底面の最深部は、前記絶縁層の表面よりも下方に位置することを特徴とする配線基板。 - 前記第1金属層は、
前記第1開口部よりも前記第2開口部において、前記絶縁層からの高さが低いことを特徴とする請求項1記載の配線基板。 - 前記第2金属層は、
前記第1金属層から遠い側の面が球面状に突出することを特徴とする請求項1記載の配線基板。 - 前記第1金属層は、
前記絶縁層の表面よりも前記配線層から遠くに位置する面を有することを特徴とする請求項1記載の配線基板。 - 前記第1金属層は、
前記第1開口部において平坦な面を介して前記第2金属層と重なることを特徴とする請求項1記載の配線基板。 - 前記第1金属層は、
前記第2金属層を形成する金属よりも融点が高い金属から形成されることを特徴とする請求項1記載の配線基板。 - 前記第1金属層は、
前記第1開口部及び前記第1開口部周囲の前記絶縁層の上面に形成された第1部分と、
前記第2開口部及び前記第2開口部周囲の前記絶縁層の上面に形成された第2部分と
を含み、
前記第1開口部周囲の前記絶縁層の上面における前記第1部分の厚さが、前記第2開口部周囲の前記絶縁層の上面における前記第2部分の厚さよりも厚い
ことを特徴とする請求項1記載の配線基板。 - 前記第1開口部における前記第1金属層、前記第2金属層及び前記第3金属層によって第1接続端子が形成され、
前記第2開口部における前記第1金属層、前記第2金属層及び前記第3金属層によって第2接続端子が形成され、
前記第1接続端子よりも前記第2接続端子が大径である
ことを特徴とする請求項1記載の配線基板。 - 前記第1開口部の径よりも前記第1接続端子の径が大きく、
前記第2開口部の径よりも前記第2接続端子の径が大きい
ことを特徴とする請求項8記載の配線基板。 - 配線層を形成し、
前記配線層を被覆するとともに、前記配線層まで貫通する第1開口部及び前記第1開口部よりも大径の第2開口部を備える絶縁層を形成し、
めっきにより、前記第1開口部及び前記第2開口部に、前記第1開口部よりも前記第2開口部において深い凹部を有する第1金属層を形成し、
めっきにより、前記第1金属層に重ねて第2金属層を形成し、
前記第2金属層を溶融した後に固化する
工程を有し、
前記第2金属層を形成する工程において、前記第1金属層と前記第2金属層との間に、前記第2金属層よりも融点が高い第3金属層を介在させ、
前記第1金属層の凹部は、
前記第2開口部において前記絶縁層の表面よりも前記配線層に近づく底面を有し、
前記底面の最深部は、前記絶縁層の表面よりも下方に位置することを特徴とする配線基板の製造方法。 - 前記第1金属層の凹部に重なることによって前記第2金属層に形成される凹部にレジストを充填し、
前記レジストとともに前記第2金属層を研磨し、
研磨後に残存する前記レジストを剥離する
工程をさらに有することを特徴とする請求項10記載の配線基板の製造方法。 - 前記第1金属層は、
前記第1開口部及び前記第1開口部周囲の前記絶縁層の上面に形成された第1部分と、
前記第2開口部及び前記第2開口部周囲の前記絶縁層の上面に形成された第2部分と
を含み、
前記第1開口部周囲の前記絶縁層の上面における前記第1部分の厚さが、前記第2開口部周囲の前記絶縁層の上面における前記第2部分の厚さよりも厚い
ことを特徴とする請求項10記載の配線基板の製造方法。 - 前記第2金属層を溶融した後に固化する工程において、前記第1開口部における前記第1金属層、前記第2金属層及び前記第3金属層によって第1接続端子を形成するとともに、前記第2開口部における前記第1金属層、前記第2金属層及び前記第3金属層によって第2接続端子を形成し、
前記第1接続端子よりも前記第2接続端子が大径である
ことを特徴とする請求項10記載の配線基板の製造方法。 - 前記第1開口部の径よりも前記第1接続端子の径が大きく、
前記第2開口部の径よりも前記第2接続端子の径が大きい
ことを特徴とする請求項13記載の配線基板の製造方法。
Priority Applications (3)
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