JP7309717B2 - 二次電池の異常検知システム - Google Patents
二次電池の異常検知システム Download PDFInfo
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- JP7309717B2 JP7309717B2 JP2020533885A JP2020533885A JP7309717B2 JP 7309717 B2 JP7309717 B2 JP 7309717B2 JP 2020533885 A JP2020533885 A JP 2020533885A JP 2020533885 A JP2020533885 A JP 2020533885A JP 7309717 B2 JP7309717 B2 JP 7309717B2
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Classifications
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- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
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- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
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- H—ELECTRICITY
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- H03K—PULSE TECHNIQUE
- H03K21/00—Details of pulse counters or frequency dividers
- H03K21/08—Output circuits
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本実施の形態では、本発明の一形態に係わる異常検知システムの構成例について説明する。本発明の一形態に係わる異常検知システムは、半導体特性を利用することで機能するシステムであり、特に、安全弁を有する二次電池の異常検知を行う。
図1(A)は、異常検知システム100の構成例を示すブロック図である。異常検知システム100は、歪センサ30、メモリ40、および、コンパレータ50を有する。
図2(A)は、異常検知システム100の動作例を説明するタイミングチャートであり、図2(B)は、異常検知システム110の動作例を説明するタイミングチャートである。
図1(A)および図1(B)に示すように、歪センサ30は、抵抗素子R11および歪センサ素子R12を直列接続することで、構成することができる。
図1(A)および図1(B)に示すように、メモリ40は、容量素子C11およびトランジスタT11を用いて、構成することができる。
図1(A)および図1(B)に示すように、抵抗素子R11および歪センサ素子R12が直列接続されたものは、歪センサ30として、配線VDDおよび配線VSSと電気的に接続される。すなわち、高電源電位Vdと低電源電位Vsの電位差は、抵抗素子R11および歪センサ素子R12によって分圧され、ノードN11の電位(VN11)は、高電源電位Vdと低電源電位Vsの間の電位となる。VN11は、歪センサ30が、コンパレータ50に出力する電位である。
コンパレータ50、発振回路60、および、回路70は、OSトランジスタを用いて構成してもよいし、半導体基板に形成したトランジスタを用いて構成してもよい。半導体基板としては、トランジスタのチャネル領域を形成することが可能であれば、特に限定されない。例えば、単結晶シリコン基板、単結晶ゲルマニウム基板、化合物半導体基板(SiC基板、GaN基板など)、SOI(Silicon on Insulator)基板などを用いることができる。
本実施の形態では、上記実施の形態で説明した異常検知システムが異常検知を行う、二次電池の構成例について説明する。
本実施の形態では、OSトランジスタを半導体基板に形成したトランジスタの上方に積層して設けた半導体装置について、構成例を説明する。
図5に示す半導体装置は、トランジスタ300、トランジスタ500、および、容量素子600を有している。図6(A)はトランジスタ500のチャネル長方向の断面図であり、図6(B)はトランジスタ500のチャネル幅方向の断面図であり、図6(C)はトランジスタ300のチャネル幅方向の断面図である。
なお、本実施の形態に示す半導体装置のトランジスタ500は、上記の構造に限られるものではない。以下、トランジスタ500に用いることができる構造例について説明する。
図7(A)、(B)および(C)を用いてトランジスタ510Aの構造例を説明する。図7(A)はトランジスタ510Aの上面図である。図7(B)は、図7(A)に一点鎖線L1-L2で示す部位の断面図である。図7(C)は、図7(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図7(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図8(A)、(B)および(C)を用いてトランジスタ510Bの構造例を説明する。図8(A)はトランジスタ510Bの上面図である。図8(B)は、図8(A)に一点鎖線L1-L2で示す部位の断面図である。図8(C)は、図8(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図8(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図9(A)、(B)および(C)を用いてトランジスタ510Cの構造例を説明する。図9(A)はトランジスタ510Cの上面図である。図9(B)は、図9(A)に一点鎖線L1-L2で示す部位の断面図である。図9(C)は、図9(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図9(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図10(A)、(B)および(C)を用いてトランジスタ510Dの構造例を説明する。図10(A)はトランジスタ510Dの上面図である。図10(B)は、図10(A)に一点鎖線L1-L2で示す部位の断面図である。図10(C)は、図10(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図10(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図11(A)乃至図11(C)を用いてトランジスタ510Eの構造例を説明する。図11(A)はトランジスタ510Eの上面図である。図11(B)は、図11(A)に一点鎖線L1-L2で示す部位の断面図である。図11(C)は、図11(A)に一点鎖線W1-W2で示す部位の断面図である。なお、図11(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
また、図5及び図6では、ゲートとして機能する導電体560が、絶縁体580の開口の内部に形成されている構造例について説明したが、例えば、当該導電体の上方に、当該絶縁体が設けられた構造を用いることもできる。このようなトランジスタの構造例を、図12、図13に示す。
本実施の形態では、上記実施の形態で説明したOSトランジスタに用いることができる金属酸化物の構成について説明する。
本明細書等において、CAAC(c-axis aligned crystal)、及びCAC(cloud-aligned composite)と記載する場合がある。なお、CAACは結晶構造の一例を表し、CACは機能、または材料の構成の一例を表す。
酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、CAAC-OS(c-axis aligned crystalline oxide semiconductor)、多結晶酸化物半導体、nc-OS(nanocrystalline oxide semiconductor)、擬似非晶質酸化物半導体(a-like OS:amorphous-like oxide semiconductor)および非晶質酸化物半導体などがある。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
本実施の形態では、二次電池、および、上記実施の形態で説明した異常検知システムを有する、電子機器の一例について説明する。
Claims (6)
- 歪センサと、
メモリと、
コンパレータと、を有する異常検知システムであって、
前記メモリは、アナログ電位を保持する機能を有し、
前記コンパレータは、前記歪センサが出力する第1電位と、前記メモリが保持している第2電位と、を比較する機能を有し、
前記異常検知システムは、前記第1電位より高い前記第2電位を、前記メモリに保持する初期化動作を行う機能を有し、
前記第1電位が、前記第2電位より高い電位となった場合、異常検出信号を出力する、異常検知システム。 - 歪センサと、
メモリと、
コンパレータと、を有する異常検知システムであって、
前記メモリは、アナログ電位を保持する機能を有し、
前記コンパレータは、前記歪センサが出力する第1電位と、前記メモリが保持している第2電位と、を比較する機能を有し、
前記異常検知システムは、前記第1電位より低い前記第2電位を、前記メモリに保持する初期化動作を行う機能を有し、
前記第1電位が、前記第2電位より低い電位となった場合、異常検出信号を出力する、異常検知システム。 - 歪センサと、
メモリと、
コンパレータと、
発振回路と、
カウンタ回路と、を有する異常検知システムであって、
前記メモリは、アナログ電位を保持する機能を有し、
前記コンパレータは、前記歪センサが出力する第1電位と、前記メモリが保持している第2電位と、を比較する機能を有し、
前記異常検知システムは、前記第1電位より高い前記第2電位を、前記メモリに保持する初期化動作を行う機能を有し、
前記第1電位が、前記第2電位より高い電位となった場合、前記発振回路は、交流信号を生成し、
前記カウンタ回路は、前記交流信号の発振回数をカウントする機能を有し、
前記発振回数が所定の回数に達すると、異常検出信号を出力する、異常検知システム。 - 歪センサと、
メモリと、
コンパレータと、
発振回路と、
カウンタ回路と、を有する異常検知システムであって、
前記メモリは、アナログ電位を保持する機能を有し、
前記コンパレータは、前記歪センサが出力する第1電位と、前記メモリが保持している第2電位と、を比較する機能を有し、
前記異常検知システムは、前記第1電位より低い前記第2電位を、前記メモリに保持する初期化動作を行う機能を有し、
前記第1電位が、前記第2電位より低い電位となった場合、前記発振回路は、交流信号を生成し、
前記カウンタ回路は、前記交流信号の発振回数をカウントする機能を有し、
前記発振回数が所定の回数に達すると、異常検出信号を出力する、異常検知システム。 - 請求項1乃至請求項4のいずれか一項において、
前記歪センサは、抵抗素子と、歪センサ素子と、を有し、
前記歪センサ素子は、二次電池に貼り付けられている、異常検知システム。 - 請求項1乃至請求項5のいずれか一項において、
前記メモリは、トランジスタと、容量素子と、を有し、
前記トランジスタは、チャネル形成領域に金属酸化物を有する、異常検知システム。
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