JP7302926B2 - 積層セラミックキャパシタ - Google Patents
積層セラミックキャパシタ Download PDFInfo
- Publication number
- JP7302926B2 JP7302926B2 JP2018208764A JP2018208764A JP7302926B2 JP 7302926 B2 JP7302926 B2 JP 7302926B2 JP 2018208764 A JP2018208764 A JP 2018208764A JP 2018208764 A JP2018208764 A JP 2018208764A JP 7302926 B2 JP7302926 B2 JP 7302926B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- layer
- multilayer ceramic
- electrode
- ceramic capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims description 41
- 238000007747 plating Methods 0.000 claims description 246
- 229910000765 intermetallic Inorganic materials 0.000 claims description 18
- 229910020938 Sn-Ni Inorganic materials 0.000 claims description 13
- 229910008937 Sn—Ni Inorganic materials 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 47
- 239000000919 ceramic Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000002776 aggregation Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/252—Terminals the terminals being coated on the capacitive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/248—Terminals the terminals embracing or surrounding the capacitive element, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Description
110 本体
111 誘電体層
121、122 第1及び第2内部電極
130、140 第1及び第2外部電極
131、141 電極層
132 第1めっき部
133 第2めっき部
Claims (18)
- 誘電体層及び内部電極を含む本体と、前記本体に配置される外部電極と、を含み、
前記外部電極は、
前記内部電極と連結される電極層と、
前記電極層上に配置される第1めっき部と、
前記第1めっき部上に配置される第2めっき部と、を含み、
前記第1めっき部は、Snめっき層及びNiめっき層が交互に配置された複数のめっき層を含み、前記第1めっき部の複数のめっき層のうち前記電極層と接するように配置されるめっき層は、Snめっき層である、積層セラミックキャパシタ。 - 前記第1めっき部の複数のめっき層は、前記電極層上に順次配置されるSnめっき層、Niめっき層、及びSnめっき層からなる、請求項1に記載の積層セラミックキャパシタ。
- 前記第1めっき部の厚さは、前記第2めっき部の厚さより薄い、請求項1または2に記載の積層セラミックキャパシタ。
- 前記第1めっき部の厚さは、前記第2めっき部の厚さの1/2以下である、請求項1から3のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第1めっき部のSnめっき層の厚さは0.1~1μmである、請求項1から4のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第2めっき部は、前記第1めっき部上に順次配置されたNiめっき層及びSnめっき層を含む、請求項1から5のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第2めっき部のNiめっき層の厚さは1~10μmであり、前記第2めっき部のSnめっき層の厚さは1~10μmである、請求項6に記載の積層セラミックキャパシタ。
- 前記電極層は、導電性金属及びガラスを含む焼成電極である、請求項1から7のいずれか一項に記載の積層セラミックキャパシタ。
- 前記内部電極は、前記誘電体層を挟んで交互に配置される第1及び第2内部電極を含み、
前記外部電極は、前記第1及び第2内部電極とそれぞれ連結される第1及び第2外部電極を含む、請求項1から8のいずれか一項に記載の積層セラミックキャパシタ。 - 誘電体層及び内部電極を含む本体と、前記本体に配置される外部電極と、を含み、
前記外部電極は、
前記内部電極と接触する電極層と、
前記電極層上に配置される第1めっき部と、
前記第1めっき部上に配置される第2めっき部と、を含み、
前記第1めっき部は、Snめっき層及びNiめっき層が交互に配置された複数のめっき層を含み、前記第1めっき部の複数のめっき層のうち前記電極層と接するように配置されるめっき層は、Snめっき層であり、前記第1めっき部のSnめっき層とNiめっき層との間の界面にSn-Ni金属間化合物層が配置される、積層セラミックキャパシタ。 - 前記第1めっき部の厚さは、前記第2めっき部の厚さより薄い、請求項10に記載の積層セラミックキャパシタ。
- 前記第1めっき部の厚さは、前記第2めっき部の厚さの1/2以下である、請求項10または11に記載の積層セラミックキャパシタ。
- 前記Sn-Ni金属間化合物層は、Sn含量が10~90wt%であり、Ni含量が10~90wt%である、請求項10から12のいずれか一項に記載の積層セラミックキャパシタ。
- 前記第2めっき部は、前記第1めっき部上に順次配置されたNiめっき層及びSnめっき層を含み、
前記第2めっき部のSnめっき層とNiめっき層との間の界面にSn-Ni金属間化合物層が配置され、前記第1めっき部と前記第2めっき部との間の界面にSn-Ni金属間化合物層が配置される、請求項10から13のいずれか一項に記載の積層セラミックキャパシタ。 - 誘電体層及び内部電極を含む本体と、前記本体に配置される外部電極と、を含み、
前記外部電極は、
前記内部電極と接触する電極層と、
前記電極層上に配置され、Sn、Ni、及びSn-Ni金属間化合物を混合した状態で含む第1めっき部と、
前記第1めっき部上に配置される第2めっき部と、を含む、積層セラミックキャパシタ。 - 前記第1めっき部は、Sn含量が10~90wt%であり、Ni含量が10~90wt%である、請求項15に記載の積層セラミックキャパシタ。
- 前記第2めっき部は、前記第1めっき部上に順次配置されたNiめっき層及びSnめっき層を含む、請求項15または16に記載の積層セラミックキャパシタ。
- 前記第2めっき部のSnめっき層とNiめっき層との間の界面にSn-Ni金属間化合物層が配置され、
前記第1めっき部と前記第2めっき部との間の界面にSn-Ni金属間化合物層が配置される、請求項17に記載の積層セラミックキャパシタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180075286A KR102142519B1 (ko) | 2018-06-29 | 2018-06-29 | 적층 세라믹 커패시터 |
KR10-2018-0075286 | 2018-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020004942A JP2020004942A (ja) | 2020-01-09 |
JP7302926B2 true JP7302926B2 (ja) | 2023-07-04 |
Family
ID=69008378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018208764A Active JP7302926B2 (ja) | 2018-06-29 | 2018-11-06 | 積層セラミックキャパシタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10886066B2 (ja) |
JP (1) | JP7302926B2 (ja) |
KR (1) | KR102142519B1 (ja) |
CN (1) | CN110660586B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102333086B1 (ko) * | 2019-08-19 | 2021-12-01 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
CN112509812B (zh) * | 2020-11-11 | 2022-05-31 | 上海永铭电子股份有限公司 | 高电压陶瓷电容器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007177311A (ja) | 2005-12-28 | 2007-07-12 | Fujitsu Ltd | めっき皮膜及びその形成方法並びに電子部品 |
JP2012238784A (ja) | 2011-05-13 | 2012-12-06 | Murata Mfg Co Ltd | 電子部品 |
WO2013132966A1 (ja) | 2012-03-05 | 2013-09-12 | 株式会社村田製作所 | 電子部品および電子部品と接合対象物との接合構造体の形成方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003229192A (ja) * | 2002-02-05 | 2003-08-15 | Auto Network Gijutsu Kenkyusho:Kk | 電食を防止するアルミ電線の端末構造 |
JP2010242117A (ja) * | 2009-04-01 | 2010-10-28 | Alps Electric Co Ltd | 電気接点およびその製造方法 |
CN104093888B (zh) | 2012-01-23 | 2016-08-24 | 株式会社村田制作所 | 电子部件及其制造方法 |
KR101462754B1 (ko) * | 2013-01-24 | 2014-11-17 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 제조방법. |
KR20150008632A (ko) * | 2013-07-15 | 2015-01-23 | 삼성전기주식회사 | 기판 내장용 적층 세라믹 전자 부품 |
KR102076145B1 (ko) * | 2013-08-09 | 2020-02-11 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 실장 기판과 제조 방법 |
KR101514558B1 (ko) * | 2013-10-28 | 2015-04-22 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
KR20140039016A (ko) * | 2014-02-27 | 2014-03-31 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 실장 기판 |
KR20150118385A (ko) * | 2014-04-14 | 2015-10-22 | 삼성전기주식회사 | 적층 세라믹 커패시터, 그 제조 방법 및 그 실장 기판 |
CN107004506B (zh) * | 2014-12-19 | 2018-12-28 | 京瓷株式会社 | 层叠型电容器以及安装构造体 |
KR101659208B1 (ko) * | 2015-02-06 | 2016-09-30 | 삼성전기주식회사 | 적층 세라믹 전자 제품 및 그 제조 방법 |
US9892854B2 (en) | 2015-03-12 | 2018-02-13 | Murata Manufacturing Co., Ltd. | Multilayer ceramic capacitor and method for manufacturing the same |
JP6679964B2 (ja) * | 2015-03-12 | 2020-04-15 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP6524734B2 (ja) | 2015-03-19 | 2019-06-05 | 株式会社村田製作所 | 電子部品およびこれを備えた電子部品連 |
KR101792396B1 (ko) * | 2015-10-29 | 2017-11-02 | 삼성전기주식회사 | 커패시터 및 그 제조방법 |
JP2018067568A (ja) | 2016-10-17 | 2018-04-26 | 株式会社村田製作所 | 積層セラミックコンデンサの製造方法 |
KR101831322B1 (ko) | 2017-01-25 | 2018-02-23 | (주)에프엠 | 니켈도금층이 제거된 연성외부전극 제조용 도전성 페이스트 및 이를 포함하는 수동 전자 부품 |
-
2018
- 2018-06-29 KR KR1020180075286A patent/KR102142519B1/ko active IP Right Grant
- 2018-10-26 US US16/171,903 patent/US10886066B2/en active Active
- 2018-11-06 JP JP2018208764A patent/JP7302926B2/ja active Active
- 2018-12-19 CN CN201811556272.4A patent/CN110660586B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007177311A (ja) | 2005-12-28 | 2007-07-12 | Fujitsu Ltd | めっき皮膜及びその形成方法並びに電子部品 |
JP2012238784A (ja) | 2011-05-13 | 2012-12-06 | Murata Mfg Co Ltd | 電子部品 |
WO2013132966A1 (ja) | 2012-03-05 | 2013-09-12 | 株式会社村田製作所 | 電子部品および電子部品と接合対象物との接合構造体の形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US10886066B2 (en) | 2021-01-05 |
KR20200002124A (ko) | 2020-01-08 |
JP2020004942A (ja) | 2020-01-09 |
CN110660586A (zh) | 2020-01-07 |
KR102142519B1 (ko) | 2020-08-07 |
US20200006001A1 (en) | 2020-01-02 |
CN110660586B (zh) | 2022-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8139342B2 (en) | Laminated electronic component and method for manufacturing the same | |
KR101462754B1 (ko) | 적층 세라믹 커패시터 및 그 제조방법. | |
US20170171977A1 (en) | Multilayer ceramic capacitor, method of fabrication thereof and circuit board having electronic component mounted thereon | |
JP7375289B2 (ja) | 積層セラミック電子部品 | |
CN109473279B (zh) | 多层陶瓷电容器及其制造方法 | |
US10879000B2 (en) | Multilayer ceramic electronic component and interposer included therein | |
JP7302900B2 (ja) | 積層セラミックキャパシタ | |
JP7235388B2 (ja) | 積層セラミック電子部品 | |
JP2015057810A (ja) | 基板内蔵用積層セラミック電子部品及び積層セラミック電子部品内蔵型印刷回路基板 | |
JP7111286B2 (ja) | 積層型キャパシタ | |
JP2021044592A (ja) | 積層型キャパシタ | |
KR102166129B1 (ko) | 적층 세라믹 커패시터 | |
US11776746B2 (en) | Multilayer capacitor | |
US10297386B2 (en) | Multilayer ceramic capacitor and board having the same | |
JP7302926B2 (ja) | 積層セラミックキャパシタ | |
US9466424B2 (en) | Paste for external electrode, multilayer ceramic electronic component, and method of manufacturing the same | |
US20220165497A1 (en) | Multilayer electronic component | |
JP7239239B2 (ja) | 積層セラミックキャパシタ及びその製造方法 | |
KR20190116121A (ko) | 커패시터 부품 | |
US10923285B2 (en) | Multilayer ceramic electronic component | |
KR102574416B1 (ko) | 적층 세라믹 전자부품 | |
JP2023099456A (ja) | 積層型電子部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210928 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221102 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230523 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230616 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7302926 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |