JP7301727B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 53
- 239000004020 conductor Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 52
- 230000005684 electric field Effects 0.000 description 38
- 238000009792 diffusion process Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 14
- 238000007789 sealing Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- 229940105963 yttrium fluoride Drugs 0.000 description 5
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Description
まず、実施形態に係るプラズマ処理装置1について、図1を参照しながら説明する。図1は、実施形態に係るプラズマ処理装置1を示す断面模式図である。図1に示すプラズマ処理装置1は、処理容器10、載置台12、上部電極14、及び導波部20を有する。
実施形態においては、上部電極14の基台19の下に、ガス拡散用の空間225を介して、誘電体板18が配置される。基台19の下面は、中心と外周が凸状になり、中間はリング状に凹んでいる。基台19の下に形成されたガス拡散用の空間225は、基台19の下面に沿って中心と外周が凹み、中間が凸状になっている。空間225には、ガス供給器42からのガスが流通する。ガス拡散用の空間225は、水平方向にガスが拡散するように連通している。
G=60mm
Ne=5×1010cm-3
図3(c)の実施形態の変形例にかかる誘電体板18の厚みは、略逆W字型であって、中心部Ra及び外周部Rcがスロープ状に形成されている。この場合にも、中心部Ra及び外周部Rcを中間部Rbよりも薄くなっている。これにより、高周波の通る誘電体板18の経路が、中心部Ra及び外周部Rcでは中間部Rbよりも狭くなる。中心部Raまで高周波を伝播させるためには、中心部Raに向かう途中の中間部Rbの経路はある程度広くして、高周波が通り易いようにしておく。これにより、外周部Rcから中間部Rbを介して中心部Raへ高周波が伝播する途中で高周波の伝播が途切れず、中心部Raまで高周波が伝播することができる。また、外周部Rcが中間部Rbよりも電界強度が高くなることを回避できる。これにより、図3(f)に示すように、高周波の電界(エネルギー)分布を均一にすることで、プラズマ密度の面内均一性を図ることができる。
次に、実施形態に係るプラズマ処理方法について、図4を参照しながら説明する。図4は、実施形態のプラズマ処理方法を示すフローチャートである。本処理は、制御部50により制御される。
次に、実施形態に係るプラズマ処理装置1の変形例について、図5を参照しながら説明する。図5は、実施形態の変形例に係るプラズマ処理装置1を示す断面模式図である。変形例に係るプラズマ処理装置1は、処理容器10、載置台12、誘電体板18(及び導体17)、及び導入部16を備えている。導体17は、金属メッシュまたは金属薄膜である。本例では導体17は、金属メッシュであり、その材料は、タングステンまたはモリブデンであるが、他の導電性材料であってもよい。
Claims (11)
- 処理容器内に設けられた載置台と上部電極とを有するプラズマ処理装置であって、
前記上部電極は、
前記載置台と対向する誘電体板と、
前記誘電体板の前記載置台に対向する面の反対側に形成された導体であり、金属メッシュまたは金属膜である導体と、を有し、
前記誘電体板は、中心部と、外周部と、前記中心部と前記外周部との間の中間部とを有し、
前記中間部の厚さは、前記中心部と前記外周部との厚さよりも厚い、
プラズマ処理装置。 - 処理容器内に設けられた載置台と上部電極とを有するプラズマ処理装置であって、
前記上部電極は、
前記載置台と対向する誘電体板と、
前記誘電体板の前記載置台に対向する面の反対側に形成された導体と、を有し、
前記誘電体板は、中心部と、外周部と、前記中心部と前記外周部との間の中間部とを有し、
前記誘電体板の厚さは、逆W字型に形成され、
前記中間部の厚さは、前記中心部と前記外周部との厚さよりも厚い、
プラズマ処理装置。 - 前記誘電体板の上面の段差は、階段状に形成されている、
請求項2に記載のプラズマ処理装置。 - 前記誘電体板の上面は、スロープ状に形成されている、
請求項2に記載のプラズマ処理装置。 - 前記中心部、前記中間部及び前記外周部の上面は、平坦である、
請求項1~4のいずれか一項に記載のプラズマ処理装置。 - 前記中心部と前記外周部の厚さは、同一である、
請求項1~5のいずれか一項に記載のプラズマ処理装置。 - 前記中心部と前記外周部の厚さは、異なる、
請求項1~5のいずれか一項に記載のプラズマ処理装置。 - 前記導体は、金属メッシュまたは金属膜である、
請求項2~7のいずれか一項に記載のプラズマ処理装置。 - 前記誘電体板は、複数のガス供給用の貫通孔を有する、
請求項1~8のいずれか一項に記載のプラズマ処理装置。 - 前記上部電極は、前記導体を挟んで前記誘電体板の反対側の面から高周波電力を印加する、
請求項1~9のいずれか一項に記載のプラズマ処理装置。 - 請求項1~10のいずれか一項に記載のプラズマ処理装置を用いたプラズマ処理方法であって、
前記載置台に基板を準備する工程と、
前記処理容器内にガスを供給する工程と、
前記上部電極から高周波電力を印加し、前記ガスからプラズマを生成し、前記基板の処理を行う工程と、
を有するプラズマ処理方法。
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JP2019220668A JP7301727B2 (ja) | 2019-12-05 | 2019-12-05 | プラズマ処理装置及びプラズマ処理方法 |
KR1020227021599A KR20220104045A (ko) | 2019-12-05 | 2020-11-24 | 플라스마 처리 장치 및 플라스마 처리 방법 |
US17/756,681 US20230005720A1 (en) | 2019-12-05 | 2020-11-24 | Plasma processing apparatus and plasma processing method |
PCT/JP2020/043657 WO2021111926A1 (ja) | 2019-12-05 | 2020-11-24 | プラズマ処理装置及びプラズマ処理方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005100931A (ja) | 2003-09-04 | 2005-04-14 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2010186876A (ja) | 2009-02-12 | 2010-08-26 | Mitsubishi Materials Corp | プラズマ処理装置用電極板構成体及びプラズマ処理装置 |
JP2016534522A (ja) | 2013-09-06 | 2016-11-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 誘導結合プラズマ(icp)リアクタの電力堆積制御 |
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JP4454718B2 (ja) | 1999-05-07 | 2010-04-21 | 東京エレクトロン株式会社 | プラズマ処理装置およびそれに用いられる電極 |
CH706979B1 (en) | 2004-04-30 | 2014-03-31 | Tel Solar Ag | Method for producing a disc-shaped workpiece based on a dielectric substrate and vacuum treatment plant therefor. |
KR20100022146A (ko) * | 2008-08-19 | 2010-03-02 | 삼성전자주식회사 | 플라즈마 공정장치 및 그 방법 |
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Patent Citations (3)
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JP2005100931A (ja) | 2003-09-04 | 2005-04-14 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2010186876A (ja) | 2009-02-12 | 2010-08-26 | Mitsubishi Materials Corp | プラズマ処理装置用電極板構成体及びプラズマ処理装置 |
JP2016534522A (ja) | 2013-09-06 | 2016-11-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 誘導結合プラズマ(icp)リアクタの電力堆積制御 |
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