JP7293282B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7293282B2 JP7293282B2 JP2021099497A JP2021099497A JP7293282B2 JP 7293282 B2 JP7293282 B2 JP 7293282B2 JP 2021099497 A JP2021099497 A JP 2021099497A JP 2021099497 A JP2021099497 A JP 2021099497A JP 7293282 B2 JP7293282 B2 JP 7293282B2
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- oxide semiconductor
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- insulating film
- oxide
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001362 electron spin resonance spectrum Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 210000001508 eye Anatomy 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000004098 selected area electron diffraction Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
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- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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Description
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図1乃至図12を参照して説明する。
図1(A)は、本発明の一態様の半導体装置であるトランジスタ100の上面図であり、図1(B)は、図1(A)に示す一点鎖線X1-X2間における切断面の断面図に相当し、図1(C)は、図1(A)に示す一点鎖線Y1-Y2間における切断面の断面図に相当する。なお、図1(A)において、煩雑になることを避けるため、トランジスタ100の構成要素の一部(ゲート絶縁膜として機能する絶縁膜等)を省略して図示している。また、一点鎖線X1-X2方向をチャネル長方向、一点鎖線Y1-Y2方向をチャネル幅方向と呼称する場合がある。なお、トランジスタの上面図においては、以降の図面においても図1(A)と同様に、構成要素の一部を省略して図示する場合がある。
以下では、本実施の形態の半導体装置に含まれる構成要素について、詳細に説明する。
基板102の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板102として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板102として用いてもよい。なお、基板102として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。
第1のゲート電極として機能する導電膜104、ソース電極として機能する導電膜112a、ドレイン電極として機能する導電膜112b、接続電極として機能する導電膜112c、第2のゲート電極として機能する導電膜120a、及び画素電極として機能する導電膜120bとしては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタ100の第1のゲート絶縁膜として機能する絶縁膜106、107としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁層を、それぞれ用いることができる。なお、絶縁膜106、107の積層構造とせずに、上述の材料から選択された単層の絶縁膜、または3層以上の絶縁膜を用いてもよい。
酸化物半導体膜108としては、先に示す材料を用いることができる。
絶縁膜114、116は、トランジスタ100の第2のゲート絶縁膜として機能する。また、絶縁膜114、116は、酸化物半導体膜108に酸素を供給する機能を有する。すなわち、絶縁膜114、116は、酸素を有する。また、絶縁膜114は、酸素を透過することのできる絶縁膜である。なお、絶縁膜114は、後に形成する絶縁膜116を形成する際の、酸化物半導体膜108へのダメージ緩和膜としても機能する。
絶縁膜118は、トランジスタ100の保護絶縁膜として機能する。
次に、図1(A)(B)(C)に示すトランジスタ100の変形例について、図2乃至図6を用いて説明する。
次に、本発明の一態様の半導体装置であるトランジスタ100の作製方法について、図7乃至図12を用いて説明する。
本実施の形態においては、本発明の一態様に用いることのできる、酸化物半導体の組成、及び酸化物半導体の構造等について、図13乃至図20を参照して説明する。
まず、酸化物半導体の組成について説明する。
続いて、酸化物半導体をトランジスタに用いる構成について説明する。
次に、酸化物半導体の積層構造について説明する。
次に、酸化物半導体の構造について説明する。
まずは、CAAC-OSについて説明する。
次に、nc-OSについて説明する。
a-like OSは、nc-OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態においては、先の実施の形態で例示したトランジスタを有する表示装置の一例について、図21乃至図27を用いて以下説明を行う。
図22及び図24に示す表示装置700は、引き回し配線部711と、画素部702と、ソースドライバ回路部704と、FPC端子部708と、を有する。また、引き回し配線部711は、信号線710を有する。また、画素部702は、トランジスタ750及び容量素子790を有する。また、ソースドライバ回路部704は、トランジスタ752を有する。
図22に示す表示装置700は、液晶素子775を有する。液晶素子775は、導電膜772、導電膜774、及び液晶層776を有する。導電膜774は、第2の基板705側に設けられ、対向電極としての機能を有する。図22に示す表示装置700は、導電膜772と導電膜774に印加される電圧によって、液晶層776の配向状態が変わることによって光の透過、非透過が制御され画像を表示することができる。
図24に示す表示装置700は、発光素子782を有する。発光素子782は、導電膜772、EL層786、及び導電膜788を有する。図24に示す表示装置700は、発光素子782が有するEL層786が発光することによって、画像を表示することができる。なお、EL層786は、有機化合物、または量子ドットなどの無機化合物を有する。
また、図24及び図25に示す表示装置700に入出力装置を設けてもよい。当該入出力装置としては、例えば、タッチパネル等が挙げられる。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図28を用いて説明を行う。
図28(A)に示す表示装置は、表示素子の画素を有する領域(以下、画素部502という)と、画素部502の外側に配置され、画素を駆動するための回路を有する回路部(以下、駆動回路部504という)と、素子の保護機能を有する回路(以下、保護回路506という)と、端子部507と、を有する。なお、保護回路506は、設けない構成としてもよい。
本実施の形態では、上述の実施の形態で説明したトランジスタの適用可能な回路構成の一例について、図29乃至図32を用いて説明する。
図29(A)には、駆動回路が有するシフトレジスタやバッファ等に適用することができるインバータの回路図を示す。インバータ800は、入力端子INに与える信号の論理を反転した信号を出力端子OUTに出力する。インバータ800は、複数のOSトランジスタを有する。信号SBGは、OSトランジスタの電気特性を切り替えることができる信号である。
本実施の形態では、上述の実施の形態で説明した酸化物半導体を有するトランジスタ(OSトランジスタ)を、複数の回路に用いる半導体装置の一例について、図33乃至図36を用いて説明する。
図33(A)は、半導体装置900のブロック図である。半導体装置900は、電源回路901、回路902、電圧生成回路903、回路904、電圧生成回路905および回路906を有する。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図37乃至図40を用いて説明を行う。
図37に示す表示モジュール7000は、上部カバー7001と下部カバー7002との間に、FPC7003に接続されたタッチパネル7004、FPC7005に接続された表示パネル7006、バックライト7007、フレーム7009、プリント基板7010、バッテリ7011を有する。
次に、図38(A)乃至図38(E)に電子機器の一例を示す。
次に、図38(A)乃至図38(E)に示す電子機器と、異なる電子機器の一例を図39(A)乃至図39(G)に示す。
100A トランジスタ
100B トランジスタ
100C トランジスタ
100D トランジスタ
100E トランジスタ
102 基板
104 導電膜
106 絶縁膜
107 絶縁膜
108 酸化物半導体膜
108a 酸化物半導体膜
108b 酸化物半導体膜
108b_0 酸化物半導体膜
108c 酸化物半導体膜
108c_ 酸化物半導体膜
108c_0 酸化物半導体膜
112_1 導電膜
112_2 導電膜
112_3 導電膜
112a 導電膜
112a_1 金属膜
112a_2 金属膜
112a_3 金属膜
112b 導電膜
112b_ 導電膜
112b_1 金属膜
112b_2 金属膜
112b_3 金属膜
112c 導電膜
112c_1 金属膜
112c_2 金属膜
112c_3 金属膜
114 絶縁膜
115 絶縁膜
116 絶縁膜
118 絶縁膜
120_1 酸化物導電膜
120_2 金属膜
120a 導電膜
120a_1 酸化物導電膜
120a_2 金属膜
120b 導電膜
120b_1 酸化物導電膜
120b_2 金属膜
141a マスク
141b マスク
141c マスク
142a マスク
142b マスク
142c マスク
151 開口部
152a 開口部
152b 開口部
191 ターゲット
192 プラズマ
193 ターゲット
194 プラズマ
501 画素回路
502 画素部
504 駆動回路部
504a ゲートドライバ
504b ソースドライバ
506 保護回路
507 端子部
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
664 電極
665 電極
667 電極
700 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 信号線
711 配線部
712 シール材
716 FPC
730 絶縁膜
732 封止膜
734 絶縁膜
736 着色膜
738 遮光膜
750 トランジスタ
752 トランジスタ
760 接続電極
770 平坦化絶縁膜
772 導電膜
773 絶縁膜
774 導電膜
775 液晶素子
776 液晶層
777 導電膜
778 構造体
780 異方性導電膜
782 発光素子
786 EL層
788 導電膜
790 容量素子
791 タッチパネル
792 絶縁膜
793 電極
794 電極
795 絶縁膜
796 電極
797 絶縁膜
800 インバータ
810 OSトランジスタ
820 OSトランジスタ
831 信号波形
832 信号波形
840 破線
841 実線
850 OSトランジスタ
860 CMOSインバータ
900 半導体装置
901 電源回路
902 回路
903 電圧生成回路
903A 電圧生成回路
903B 電圧生成回路
903C 電圧生成回路
904 回路
905 電圧生成回路
906 回路
911 トランジスタ
912 トランジスタ
912A トランジスタ
912B トランジスタ
921 制御回路
922 トランジスタ
7000 表示モジュール
7001 上部カバー
7002 下部カバー
7003 FPC
7004 タッチパネル
7005 FPC
7006 表示パネル
7007 バックライト
7008 光源
7009 フレーム
7010 プリント基板
7011 バッテリ
8000 カメラ
8001 筐体
8002 表示部
8003 操作ボタン
8004 シャッターボタン
8006 レンズ
8100 ファインダー
8101 筐体
8102 表示部
8103 ボタン
8200 ヘッドマウントディスプレイ
8201 装着部
8202 レンズ
8203 本体
8204 表示部
8205 ケーブル
8206 バッテリ
8300 ヘッドマウントディスプレイ
8301 筐体
8302 表示部
8304 固定具
8305 レンズ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 操作ボタン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9100 テレビジョン装置
9101 携帯情報端末
9102 携帯情報端末
9200 携帯情報端末
9201 携帯情報端末
9500 表示装置
9501 表示パネル
9502 表示領域
9503 領域
9511 軸部
9512 軸受部
Claims (1)
- 酸化物半導体膜と、
前記酸化物半導体膜上の第1の絶縁膜と、
ソース電極またはドレイン電極として機能する領域を有する第1の導電膜と、
ゲート電極として機能する領域を有する第2の導電膜と、を有し、
前記酸化物半導体膜と前記第2の導電膜とが重なる領域において、前記酸化物半導体膜の上面は、前記第1の絶縁膜の下面と接する領域を有し、
前記第1の導電膜の下面は、前記第1の絶縁膜の上面と接する領域を有し、
前記第1の導電膜は、前記第1の絶縁膜に形成された開口部を介して前記酸化物半導体膜と電気的に接続され、
前記第1の導電膜及び前記第2の導電膜の各々は、第1の金属膜と、前記第1の金属膜の上面に接する領域を有する第2の金属膜と、を有し、
前記第1の金属膜は、チタンと、モリブデンと、を有し、
前記第2の金属膜は、銅を有し、
前記第2の導電膜において、前記第1の金属膜は、前記第2の金属膜の端部を超えて延在している半導体装置。
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