JP7237432B2 - 比較方法及びレーザー加工装置 - Google Patents
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- B23K26/36—Removing material
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
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- B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Description
4 基台
10 Y軸方向移動ユニット
11 ウェーハ(被加工物)
11a 表面(一面)
11b 裏面(他面)
11c 厚さ
12 Y軸ガイドレール
13 ダイシングテープ
14 Y軸移動テーブル
15 フレーム
16 Y軸ボールネジ
17 ウェーハユニット
18 Y軸パルスモータ
20 X軸方向移動ユニット
21 加工痕
21-1,21-2,21-3,21-4,21-5,21-6,21-7,21-8,21-9,21-10,21-11,21-12,21-13,21-14,21-15,21-16,21-17,21-18,21-19,21-20,21-21 加工痕
22 X軸ガイドレール
23 重心
24 X軸移動テーブル
25 円(所定の形状)
26 X軸ボールネジ
28 X軸パルスモータ
30 θテーブル
32 チャックテーブル
32a 保持面
32b クランプ
40 支持部
42 Z軸方向移動ユニット
44 Z軸パルスモータ
46 Z軸移動板
48 ホルダ
50 レーザービーム照射ユニット
52 ケーシング
54 集光器
54a 集光レンズ
54b 焦点距離
56 撮像ユニット
58 入出力装置
60 制御ユニット
62 高さ設定部
64 画像解析部
66 比較部
L レーザービーム
A0,A1,A2 加工痕
B1,B2,B3,B4,B5,B6,B7,B8,B9,B10,B11,B12 点
C1,C2,C3,C4,C5,C6 幅
P 集光点
Z0 基準高さ
Z1 第1高さ
Z2 第2高さ
Claims (2)
- 被加工物に吸収される波長を有するパルス状のレーザービームを該被加工物に照射することにより、該被加工物の一面に複数の加工痕を形成し、該複数の加工痕の所定の形状からのずれを定量的に比較する比較方法であって、
チャックテーブルの保持面で該被加工物を保持する保持ステップと、
該被加工物に該レーザービームを集光させる集光レンズを含む集光器の該集光レンズの焦点距離と、該被加工物の厚さとに基づいて、該レーザービームの集光点が該被加工物の該一面に位置するときの、該保持面に垂直なZ軸方向における該集光器の高さを、該集光器の基準高さに設定する基準高さ設定ステップと、
該基準高さよりも該Z軸方向の一方側に位置する第1高さから、該基準高さよりも該Z軸方向の他方側に位置する第2高さまでの該Z軸方向に沿う異なる複数の高さを設定する高さ設定ステップと、
該Z軸方向に沿って該集光器を移動させることにより該基準高さ及び該複数の高さに該集光器を位置付け、各高さに応じて該一面の異なる位置に該レーザービームを照射して、該被加工物の該一面に該複数の加工痕を形成する加工痕形成ステップと、
該複数の加工痕を撮像して画像を得る画像取得ステップと、
該画像取得ステップで取得された画像を画像解析部で解析することにより、該複数の加工痕の各々において該一面における加工痕の予め定められた複数の方向の幅の平均と、該所定の形状に対する該複数の加工痕の各々の面積比との少なくともいずれかを算出する算出ステップと、
該算出ステップで算出された該平均及び該面積比の少なくともいずれかに基づいて該複数の加工痕の該所定の形状からのずれを定量的に比較する比較ステップと、
を備えることを特徴とする比較方法。 - レーザー加工装置であって、
被加工物を保持する保持面を有するチャックテーブルと、
該チャックテーブル上に設けられ、該被加工物に吸収される波長を有するパルス状のレーザービームを集光する集光レンズを含む集光器を備えるレーザービーム照射ユニットと、
該集光レンズの焦点距離と該被加工物の厚さとに基づいて該レーザービームの集光点が該被加工物の一面に位置するときの、該保持面に垂直なZ軸方向における該集光器の位置を該集光器の基準高さに設定し、該基準高さよりも該Z軸方向の一方側に位置する第1高さから該基準高さよりも該Z軸方向の他方側に位置する第2高さまでの該Z軸方向に沿う異なる複数の高さを設定する高さ設定部と、
該Z軸方向に沿って該集光器を移動させることにより、該基準高さ及び該複数の高さに該集光器を位置付けるZ軸方向移動ユニットと、
該チャックテーブル上に設けられ、各高さに応じて該一面の異なる位置に該レーザービームを照射することで該被加工物の該一面に形成された複数の加工痕を撮像する撮像ユニットと、
該撮像ユニットによって取得された画像を解析することにより、該複数の加工痕の各々において該一面における加工痕の予め定められた複数の方向の幅の平均と、所定の形状に対する該複数の加工痕の各々の面積比との少なくともいずれかを算出する画像解析部と、
該画像解析部により算出された該平均及び該面積比の少なくともいずれかに基づいて該複数の加工痕の該所定の形状からのずれを定量的に比較する比較部と、
を備えることを特徴とするレーザー加工装置。
Priority Applications (6)
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JP2019137607A JP7237432B2 (ja) | 2019-07-26 | 2019-07-26 | 比較方法及びレーザー加工装置 |
KR1020200073318A KR20210012900A (ko) | 2019-07-26 | 2020-06-17 | 비교 방법 및 레이저 가공 장치 |
CN202010673821.7A CN112296526B (zh) | 2019-07-26 | 2020-07-14 | 比较方法和激光加工装置 |
US16/928,450 US11211296B2 (en) | 2019-07-26 | 2020-07-14 | Comparing method and laser processing apparatus |
DE102020208988.4A DE102020208988B4 (de) | 2019-07-26 | 2020-07-17 | Vergleichsverfahren und laserbearbeitungsvorrichtung |
TW109124782A TWI831990B (zh) | 2019-07-26 | 2020-07-22 | 比較方法以及雷射加工裝置 |
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JP (1) | JP7237432B2 (ja) |
KR (1) | KR20210012900A (ja) |
CN (1) | CN112296526B (ja) |
DE (1) | DE102020208988B4 (ja) |
TW (1) | TWI831990B (ja) |
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JP2021010936A (ja) * | 2019-07-09 | 2021-02-04 | 株式会社ディスコ | レーザ加工装置 |
JP7305271B2 (ja) * | 2019-08-08 | 2023-07-10 | 株式会社ディスコ | レーザー加工装置の加工性能の確認方法 |
Citations (4)
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---|---|---|---|---|
JP2001091404A (ja) | 1999-09-20 | 2001-04-06 | Matsushita Electric Ind Co Ltd | レンズ特性検査装置 |
JP2006218482A (ja) | 2005-02-08 | 2006-08-24 | Laser Solutions Co Ltd | レーザ加工装置におけるレーザ光の調整方法、レーザ加工装置、およびレーザ光調整プログラム |
JP2007229786A (ja) | 2006-03-02 | 2007-09-13 | Sumitomo Heavy Ind Ltd | レーザ加工装置及び焦点合わせ制御方法 |
JP2013078785A (ja) | 2011-10-04 | 2013-05-02 | Disco Corp | レーザー加工装置の集光スポット位置検出方法 |
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JPH0415535A (ja) * | 1990-05-09 | 1992-01-20 | Olympus Optical Co Ltd | 光情報記憶装置の光学特性測定装置 |
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- 2020-07-17 DE DE102020208988.4A patent/DE102020208988B4/de active Active
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DE102020208988A1 (de) | 2021-01-28 |
KR20210012900A (ko) | 2021-02-03 |
CN112296526B (zh) | 2022-12-27 |
TW202103828A (zh) | 2021-02-01 |
US20210028071A1 (en) | 2021-01-28 |
JP2021020234A (ja) | 2021-02-18 |
US11211296B2 (en) | 2021-12-28 |
TWI831990B (zh) | 2024-02-11 |
CN112296526A (zh) | 2021-02-02 |
DE102020208988B4 (de) | 2023-06-07 |
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