JP7224272B2 - パワー半導体装置 - Google Patents
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Description
<パワー半導体装置の構成>
図1に示されるように、実施の形態1に係るパワー半導体装置100は、パワー半導体素子10、絶縁基板11、ケース20,封止樹脂40、制御回路50,制御基板51、蓋60、および複数の外部接続端子70を主に備える。絶縁基板11、制御基板51、および蓋60は、第1方向Aに並んで配置されている。以下、第1方向Aにおいて制御基板51に対する蓋60側を上側、制御基板51に対する絶縁基板11側を下側という。
まず、図4に示されるように、コアブロック80が準備される。コアブロック80において、パワー半導体素子10、絶縁基板11、配線パターン14、センサ15、ワイヤ31,32は、封止樹脂40により封止されている。ケース20の上方部分20B、ならびに主電極端子21および駆動制御用端子22の各上方部分は、封止樹脂40から露出している。
パワー半導体装置100は、パワー半導体素子10と、パワー半導体素子10を制御する制御回路50と、制御回路50が実装された制御基板51と、第1方向Aにおいて制御基板51の少なくとも一部と重なるように配置されている蓋60と、制御基板51と接続されている第1部71と、外部機器と接続される第2部72と、第1部71と第2部72との間に位置し蓋60と固定されている第3部73とを有し、第1部71がプレスフィット部として構成されている少なくとも1つの外部接続端子70とを備える。
図7に示されるように、実施の形態2に係るパワー半導体装置は、実施の形態1に係るパワー半導体装置100と基本的に同様の構成を備えるが、第4部74の剛性が第3部73の剛性よりも低い点で、パワー半導体装置100とは異なる。
図8に示されるように、実施の形態3に係るパワー半導体装置102は、実施の形態1に係るパワー半導体装置100と基本的に同様の構成を備えるが、ケース20が壁部23を含む点で、パワー半導体装置100とは異なる。
Claims (7)
- パワー半導体素子と、
前記パワー半導体素子を制御する制御回路と、
前記制御回路が実装された制御基板と、
第1方向において前記制御基板の少なくとも一部と重なるように配置されている蓋と、
前記制御基板と接続されている第1部と、外部機器と接続される第2部と、前記第1部と前記第2部との間に位置し前記蓋と固定されている第3部とを有し、前記第1部がプレスフィット部として構成されている少なくとも1つの外部接続端子とを備え、
前記少なくとも1つの外部接続端子は、複数の外部接続端子を含み、
前記複数の外部接続端子は、前記第1方向と交差する第2方向に並んで配置されており、
前記複数の外部接続端子の各々の前記プレスフィット部は、前記第1方向および前記第2方向と交差する第3方向に弾性変形するように配置されている、パワー半導体装置。 - 前記少なくとも1つの外部接続端子の前記第1部および前記第3部は、前記第1方向に並んで配置されており、
前記少なくとも1つの外部接続端子は、前記第1部と前記第3部との間に第4部をさらに有しており、
前記第4部の剛性は、前記第3部の剛性よりも低い、請求項1に記載のパワー半導体装置。 - 前記第1方向に垂直な断面において、前記第4部の断面積の最小値は、前記第3部の断面積の最小値未満である、請求項2に記載のパワー半導体装置。
- 前記パワー半導体素子、前記制御回路、および前記制御基板を囲むように配置されており、前記蓋とともに前記パワー半導体装置の外枠の少なくとも一部を成しているケースと、
前記ケース内において前記パワー半導体素子を封止する封止樹脂とをさらに備え、
前記ケースは、前記プレスフィット部に対して前記蓋とは反対側に位置する領域を、前記第1方向と交差する方向に互いに並んで配置された第1領域と第2領域とに区画する壁部を含み、
前記第1領域には、前記パワー半導体素子および前記封止樹脂が配置されており、
前記第2領域には、前記封止樹脂が配置されておらず、
前記プレスフィット部の先端は、前記第2領域に配置されている、請求項1~3のいずれか1項に記載のパワー半導体装置。 - 前記制御基板には、貫通孔が形成されており、
前記第1部は、前記貫通孔と嵌め合わされている、請求項1~4のいずれか1項に記載のパワー半導体装置。 - 前記少なくとも1つの外部接続端子の前記第3部および前記蓋は、1つの部材として構成されている、請求項1~5のいずれか1項に記載のパワー半導体装置。
- 前記少なくとも1つの外部接続端子の前記第3部および前記蓋は、別部材が組み合わされたものとして構成されている、請求項1~5のいずれか1項に記載のパワー半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2019197065A JP7224272B2 (ja) | 2019-10-30 | 2019-10-30 | パワー半導体装置 |
US16/993,917 US11742251B2 (en) | 2019-10-30 | 2020-08-14 | Power semiconductor device including press-fit connection terminal |
DE102020125705.8A DE102020125705A1 (de) | 2019-10-30 | 2020-10-01 | Leistungs-Halbleitervorrichtung |
CN202011146157.7A CN112750801B (zh) | 2019-10-30 | 2020-10-23 | 功率半导体装置 |
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JP2019197065A JP7224272B2 (ja) | 2019-10-30 | 2019-10-30 | パワー半導体装置 |
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CN114361115B (zh) * | 2021-12-31 | 2022-08-23 | 中山市木林森微电子有限公司 | 一种多芯片埋入式封装模块结构 |
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Citations (7)
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---|---|---|---|---|
JP2011187564A (ja) | 2010-03-05 | 2011-09-22 | Keihin Corp | 半導体装置 |
WO2014132803A1 (ja) | 2013-02-26 | 2014-09-04 | 三菱電機株式会社 | 電力用半導体装置 |
JP2014175444A (ja) | 2013-03-08 | 2014-09-22 | Fuji Electric Co Ltd | 半導体装置 |
JP2017046529A (ja) | 2015-08-28 | 2017-03-02 | 三菱電機株式会社 | 半導体装置、インテリジェントパワーモジュールおよび電力変換装置 |
JP2017163135A (ja) | 2016-03-08 | 2017-09-14 | アーベーベー・シュバイツ・アーゲー | 半導体モジュール |
JP2018133481A (ja) | 2017-02-16 | 2018-08-23 | 三菱電機株式会社 | 半導体モジュールおよびインバータ装置 |
JP2019067970A (ja) | 2017-10-03 | 2019-04-25 | 三菱電機株式会社 | 半導体装置 |
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DE102006025453B4 (de) * | 2006-05-31 | 2009-12-24 | Infineon Technologies Ag | Halbleiterschaltungsanordnung |
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EP2538761B1 (en) * | 2011-06-20 | 2014-01-29 | STMicroelectronics Srl | Intelligent Power Module and related assembling method |
JP5633496B2 (ja) * | 2011-09-29 | 2014-12-03 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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2019
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- 2020-08-14 US US16/993,917 patent/US11742251B2/en active Active
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WO2014132803A1 (ja) | 2013-02-26 | 2014-09-04 | 三菱電機株式会社 | 電力用半導体装置 |
JP2014175444A (ja) | 2013-03-08 | 2014-09-22 | Fuji Electric Co Ltd | 半導体装置 |
JP2017046529A (ja) | 2015-08-28 | 2017-03-02 | 三菱電機株式会社 | 半導体装置、インテリジェントパワーモジュールおよび電力変換装置 |
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JP2019067970A (ja) | 2017-10-03 | 2019-04-25 | 三菱電機株式会社 | 半導体装置 |
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US11742251B2 (en) | 2023-08-29 |
DE102020125705A1 (de) | 2021-05-06 |
CN112750801A (zh) | 2021-05-04 |
JP2021072329A (ja) | 2021-05-06 |
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