JP7222867B2

JP7222867B2 - High-frequency element and high-frequency band device having the high-frequency element

Info

Publication number: JP7222867B2
Application number: JP2019185716A
Authority: JP
Inventors: 弘昭西村
Original assignee: Hirose Electric Co Ltd
Current assignee: Hirose Electric Co Ltd
Priority date: 2019-10-09
Filing date: 2019-10-09
Publication date: 2023-02-15
Anticipated expiration: 2039-10-09
Also published as: JP2021061205A

Description

本発明は、高周波素子、及び、該高周波素子を有する高周波帯デバイス、特に、減衰機能を有する高周波素子及び高周波帯デバイスに関する。 TECHNICAL FIELD The present invention relates to a high-frequency element and a high-frequency band device having the high-frequency element, and more particularly to a high-frequency element and a high-frequency band device having an attenuation function.

特開２００７－１７９９３９号公報（特許文献１）に、高周波素子及び高周波帯デバイスの一例が開示されている。
伝送信号の高速化に伴い、これらの高周波素子等には、例えば１００ＧＨｚ以上の高周波信号に対してもなお良好な周波数特性を有することができること、言い換えれば、良好な減衰機能を発揮することができることが所望されている。 Japanese Patent Application Laid-Open No. 2007-179939 (Patent Document 1) discloses an example of a high frequency element and a high frequency band device.
With the speeding up of transmission signals, these high-frequency elements and the like can still have good frequency characteristics even for high-frequency signals of, for example, 100 GHz or higher, in other words, they can exhibit a good attenuation function. is desired.

特開２００７－１７９９３９号公報JP 2007-179939 A

本発明は、上記特許文献１に開示された高周波素子、及び、該高周波素子を有する高周波帯デバイスにおける周波数特性を改善するための構造を提供することを目的とする。 An object of the present invention is to provide the high-frequency element disclosed in Patent Document 1 and a structure for improving the frequency characteristics of the high-frequency band device having the high-frequency element.

上記の課題を解決するため、本発明の一態様による高周波素子、又は、高周波素子を有する高周波帯デバイスは、第１部品と第２部品を含み、前記第１部品は、抵抗基板と、前記抵抗基板の信号接続部に前記抵抗基板の中心線に沿って設けた中継手段と、前記抵抗基板の対向する一対の縁部に設けたグランド接続部が挿通される一対の通路を有した導電部材と、を備え、前記第２部品は、相手同軸コネクタの相手側中心導体と電気的に接続される端子部と、前記相手同軸コネクタの相手側外部導体と電気的に接続される外部導体部と、を備え、前記端子部は、前記中継手段を介して前記抵抗基板の信号接続部と電気的に接続され、前記外部導体部は、前記導電部材を通じて前記抵抗基板のグランド接続部と電気的に接続され、前記外部導体部に面した前記導電部材の面に、前記外部導体部と当接させる凸状部が設けられていることを特徴として有する。
このような凸状部を設けることによって、導電部材を外部導体部に対してより確実に当接させることができ、高周波素子、又は、該高周波素子を有する高周波帯デバイスにおける周波数特性を改善することができる。 In order to solve the above problems, a high-frequency element or a high-frequency band device having a high-frequency element according to one aspect of the present invention includes a first component and a second component, the first component comprising a resistor substrate and the resistor Relay means provided along the center line of the resistor substrate at the signal connection portion of the substrate, and a conductive member having a pair of passages through which the ground connection portions provided at the pair of opposing edges of the resistor substrate are inserted. , wherein the second part includes a terminal portion electrically connected to a mating center conductor of the mating coaxial connector, an outer conductor portion electrically connected to a mating outer conductor of the mating coaxial connector, and wherein the terminal portion is electrically connected to the signal connection portion of the resistance substrate through the relay means, and the external conductor portion is electrically connected to the ground connection portion of the resistance substrate through the conductive member. Further, the surface of the conductive member facing the external conductor is provided with a convex portion that contacts the external conductor.
By providing such a convex portion, the conductive member can be brought into contact with the outer conductor more reliably, and the frequency characteristics of the high frequency element or the high frequency band device having the high frequency element can be improved. can be done.

上記態様の高周波素子において、前記凸状部は、前記中心線に対して同心状に設けられていてもよい。
前記凸状部の軌跡は、前記抵抗基板のグランド接続部を通るのが好ましい。 In the high-frequency device of the aspect described above, the convex portion may be provided concentrically with respect to the center line.
It is preferable that the trajectory of the convex portion passes through the ground connecting portion of the resistor substrate.

また、上記態様の高周波素子において、前記導電部材は、第１接続管と第２接続管を含んでもよい。
前記凸状部は、前記第２接続管は反対側の前記第１接続管の面に設けられていてもよい。 Moreover, in the high-frequency element of the aspect described above, the conductive member may include a first connecting pipe and a second connecting pipe.
The convex portion may be provided on the surface of the first connecting pipe opposite to the second connecting pipe.

また、上記態様の高周波素子において、前記第１接続管は円環板状であって、前記中心線に沿う第１貫通穴を有し、前記第１貫通穴の直径方向における対向位置に、板厚方向に沿って一対の第１通路が設けられていてもよく、また、前記第２接続管は円環板状であって、前記中心線に沿う第２貫通穴を有し、前記第２貫通穴の直径方向における対向位置に、板厚方向に沿って一対の第２通路が設けられていてもよい。 Further, in the high-frequency device of the aspect described above, the first connection pipe has an annular plate shape and has a first through hole along the center line, and a plate A pair of first passages may be provided along the thickness direction, and the second connection pipe may be in the shape of an annular plate, have a second through hole along the center line, A pair of second passages may be provided along the plate thickness direction at diametrically opposite positions of the through holes.

また、前記第１接続管と前記第２接続管は、前記一対の第１通路と前記一対の第２通路を板厚方向にて連通させた状態で配置されていてもよい。
更に、上記態様の高周波素子において、前記抵抗基板のグランド接続部は、前記一対の第１通路及び前記一対の第２通路に挿通され、且つ、前記一対の第２通路と導通していてもよい。 Further, the first connecting pipe and the second connecting pipe may be arranged in a state in which the pair of first passages and the pair of second passages are communicated in the plate thickness direction.
Further, in the high-frequency element of the aspect described above, the ground connecting portion of the resistor substrate may be inserted through the pair of first passages and the pair of second passages, and may be electrically connected to the pair of second passages. .

上記態様の高周波素子において、前記第１接続管は、対で設けられており、前記対の第１接続管は、前記第２接続管を挟み込むように配置されていてもよい。 In the high-frequency device of the aspect described above, the first connecting pipes may be provided in pairs, and the pair of first connecting pipes may be arranged so as to sandwich the second connecting pipe.

上記態様の高周波素子において、前記外部導体部は、前記相手同軸コネクタの相手側外部導体と電気的に接続される円環板状部分を有するのが好ましい。 In the high-frequency device of the aspect described above, it is preferable that the outer conductor portion has an annular plate-like portion electrically connected to the mating outer conductor of the mating coaxial connector.

上記態様の高周波素子において、更に、前記第１接続管と前記外部導体部の間に介挿される導電性シートを設けてもよい。 In the high-frequency device of the aspect described above, a conductive sheet may be further provided to be inserted between the first connecting pipe and the outer conductor.

前記導電性シートには、前記抵抗基板の前記グランド接続部と、前記通路との間に介挿される、挿入片を設けるのが好ましい。 It is preferable that the conductive sheet is provided with an insertion piece interposed between the ground connecting portion of the resistance substrate and the passage.

上記態様の高周波素子において、前記第１部品と前記第２部品はシェルによって覆われているのが好ましい。 In the high-frequency device of the aspect described above, it is preferable that the first component and the second component are covered with a shell.

本発明によれば、上記特許文献１に開示された高周波素子、及び、該高周波素子を有する高周波帯デバイスにおける周波数特性を改善するための改良構造を提供することができる。 According to the present invention, it is possible to provide the high-frequency element disclosed in Patent Document 1 and an improved structure for improving the frequency characteristics of the high-frequency band device having the high-frequency element.

本発明による高周波帯デバイスの側面図である。1 is a side view of a high frequency band device according to the present invention; FIG. 本発明による高周波帯デバイスの中心線断面図である。1 is a centerline cross-sectional view of a high frequency band device according to the present invention; FIG. 第１部品と第１部品を組み合わせる前の状態を示す斜視図である。It is a perspective view which shows the state before combining a 1st component and a 1st component. 図３の側面図である。4 is a side view of FIG. 3; FIG. 第２部品を第１部品の一部構成部品とともに示した斜視図である。It is the perspective view which showed the 2nd component with the partial component of the 1st component. 図５の側面図である。FIG. 6 is a side view of FIG. 5; 第１部品の分解斜視図である。It is an exploded perspective view of the first component. 第１部品の組立中間工程図である。It is an assembly intermediate process drawing of a 1st component. 第１部品の組立完成図である。It is an assembly completion drawing of a 1st component. 図９の断面図である。FIG. 10 is a cross-sectional view of FIG. 9; 変形例としてのシートの使用態様を示した斜視図である。FIG. 11 is a perspective view showing a usage mode of a sheet as a modified example; 図１１の側面図である。FIG. 12 is a side view of FIG. 11; シートの使用前の状態を示す図である。It is a figure which shows the state before use of a sheet|seat. シートの使用中の状態を示す図である。FIG. 4 is a diagram showing a state in which the seat is in use;

以下、添付図面を参照して、本発明の好適な一実施形態による、減衰機能を有する高周波素子、及び、該高周波素子を利用した高周波帯デバイスを説明する。ただし、以下の実施形態で説明する寸法、材料、形状及び構成要素の相対的な位置等は任意であり、本発明が適用される装置の構成又は様々な条件に応じて変更できる。また、特別な記載がない限り、本発明の範囲は、以下に具体的に記載された実施形態に限定されるものではない。 A high-frequency element having an attenuation function and a high-frequency band device using the high-frequency element according to a preferred embodiment of the present invention will now be described with reference to the accompanying drawings. However, the dimensions, materials, shapes, relative positions of components, etc. described in the following embodiments are arbitrary and can be changed according to the configuration of the device to which the present invention is applied or various conditions. Also, unless otherwise stated, the scope of the invention is not limited to the embodiments specifically described below.

図１は、本発明による高周波帯デバイスの側面図、図２は、その中心線断面図である。この高周波帯デバイス１は、互いに同軸的に固定され得る略円筒状の３つの部分、即ち、ネジ部２０、第１シェル２１、及び第２シェル２２から成る。ネジ部２０は、高周波帯デバイス１を相手同軸コネクタ（図示せず）にネジ接続するための部材であって、第１シェル２１の前側の一部を覆うように第１シェル２１に固定され、一方、第２シェル２２は、第１シェル２１の後側の一部を覆うように第１シェル２１に固定される。第１シェル２１の内部には、主として、第１部品６と第２部品４Ａ、４Ｂを収容し得るようになっており、一方、第２シェル２２の内部には、主として、第２部品４Ｂの前端の一部を収容し得るようになっている。第２部品４Ａと第２部品４Ｂは互いに同一構造を有し、それらの間に第１部品６を挟み込んだ状態で左右対称に配置される。図３に、第２部品４Ｂと第１部品６を組み合わせる前の状態を斜視図で示し、図４に、その側面図を示す。 FIG. 1 is a side view of a high frequency band device according to the present invention, and FIG. 2 is a center line cross-sectional view thereof. This high frequency band device 1 consists of three substantially cylindrical parts, namely a threaded part 20, a first shell 21 and a second shell 22, which can be coaxially fixed to each other. The threaded portion 20 is a member for threading the high-frequency band device 1 to a mating coaxial connector (not shown), and is fixed to the first shell 21 so as to cover a portion of the front side of the first shell 21. On the other hand, the second shell 22 is fixed to the first shell 21 so as to cover part of the rear side of the first shell 21 . The inside of the first shell 21 can mainly accommodate the first part 6 and the second parts 4A and 4B, while the inside of the second shell 22 can mainly accommodate the second part 4B. It is adapted to accommodate a portion of the front end. The second part 4A and the second part 4B have the same structure and are arranged symmetrically with the first part 6 sandwiched therebetween. FIG. 3 shows a perspective view of the state before combining the second part 4B and the first part 6, and FIG. 4 shows a side view thereof.

ネジ部２０は、その内側に第１シェル２１の前端を収容できるよう、その中心軸回りが所定の径で円筒状に刳り抜かれている。ネジ部２０には、第２シェル２２の前端側２６と同形状の接続部品を持つ相手同軸コネクタを取り付けることができる。これにより、高周波帯デバイス１を介して２つの同軸コネクタを連結させることができる。 The threaded portion 20 is hollowed out in a cylindrical shape with a predetermined diameter around its central axis so that the front end of the first shell 21 can be accommodated therein. A mating coaxial connector having the same shape as the front end side 26 of the second shell 22 can be attached to the threaded portion 20 . Thereby, two coaxial connectors can be connected via the high frequency band device 1 .

第１シェル２１には、その中心軸回りが２つの内径を有するように段状且つ円筒状に刳り抜かれることによって、２つの円筒中空部２３ａＡ、２３ａＢが形成されている。前側の円筒中空部２３ａＡの内径は、後側の円筒中空部２３ａＢの内径よりも小さく設定されており、円筒中空部２３ａＡによって形成された比較的小さなフランジ２８には、第２部品４Ａの前側４９Ａが突き合わされて、第１シェル２１の前方側からの抜け落ちを防止する。 Two cylindrical hollow portions 23aA and 23aB are formed in the first shell 21 by hollowing out in a stepped and cylindrical shape so as to have two inner diameters around the center axis. The inner diameter of the front cylindrical hollow portion 23aA is smaller than the inner diameter of the rear cylindrical hollow portion 23aB. are abutted against each other to prevent the first shell 21 from coming off from the front side.

また、第２シェル２２には、その中心軸回りが１つの内径を有するように円筒状に刳り抜かれることによって、１つの円筒中空部２４Ｂが形成されている。円筒中空部２４Ｂによって形成された比較的小さなフランジ３０には、第２部品４Ｂの前側４９Ｂが突き合わされて、第２シェル２２の前方側からの抜け落ちを防止する。 Further, the second shell 22 is hollowed out in a cylindrical shape so as to have one inner diameter around the center axis, thereby forming one cylindrical hollow portion 24B. The front side 49B of the second part 4B is abutted against the relatively small flange 30 formed by the cylindrical hollow portion 24B to prevent the second shell 22 from falling off from the front side.

ネジ部２０の内面の一部２５は、第１シェル２１との対向側付近においてネジ切りされていてもよい。このネジ切り部分を、相手同軸コネクタ（図示されていない）の所定部品、例えば、同軸ケーブルやその周囲を包囲するように設けられたネジ切り部分と軸方向にて接続することにより、高周波帯デバイス１をネジ部２０を介して相手同軸コネクタと接続することができる。 A portion 25 of the inner surface of the threaded portion 20 may be threaded near the side facing the first shell 21 . By axially connecting this threaded portion to a predetermined part of a mating coaxial connector (not shown), for example, a coaxial cable or a threaded portion provided so as to surround it, a high frequency band device can be obtained. 1 can be connected to a mating coaxial connector via a threaded portion 20 .

第２部品４Ａ、第１部品６、第２部品４Ｂは、この順番で、また、第２部品４Ａの前側４９Ａを第１シェル２１のフランジ２８に当接させた状態で、第１シェル２１の内部に所定の向きで挿入される。その後、第１シェル２１の後端に第２シェル２２をネジ等を利用して固定することにより、それら第２部品４Ａ、第１部品６、及び第２部品４Ｂは、高周波帯デバイス１の内部に完全に収容、保持され、且つ、それらの間の少なくとも軸方向における距離を一定に保つことができる。第１部品６の機能を調整することによって、高周波帯デバイス１には様々な機能を持たせることができる。例えば、本発明のように第１部品６に抵抗（６２）を設けることによって、減衰器として機能させることもできる。 The second part 4A, the first part 6, and the second part 4B are attached to the first shell 21 in this order and with the front side 49A of the second part 4A in contact with the flange 28 of the first shell 21. It is inserted inside in a predetermined direction. After that, by fixing the second shell 22 to the rear end of the first shell 21 using screws or the like, the second part 4A, the first part 6, and the second part 4B are secured inside the high-frequency band device 1. can be completely accommodated and retained in the space and the distance between them, at least in the axial direction, can be kept constant. By adjusting the function of the first component 6, the high frequency band device 1 can have various functions. For example, by providing a resistor (62) in the first component 6 as in the present invention, it can function as an attenuator.

尚、上の実施例では、相手同軸コネクタとの接続を、ネジ部２０のネジ切りによって行うものとしているが、プッシュオンロック（簡易ロック）でそれを行ってもよく、相手同軸コネクタとの接続は、これらの方法に限定されない。更に、ネジ部２０が相手同軸コネクタに設けられていてもよい。 In the above embodiment, the connection with the mating coaxial connector is made by threading the threaded portion 20, but it may be done by a push-on lock (simple lock), and the connection with the mating coaxial connector is possible. is not limited to these methods. Furthermore, the threaded portion 20 may be provided on the mating coaxial connector.

図２乃至図４に加えて、図５及び図６を参照して、第２部品４Ａ、４Ｂの構成をより詳細に説明する。図５は、第２部品４Ｂを、第１部品６の一部構成部品（第１接続管８１Ｂ）とともに示した斜視図であって、それらの中心線断面を示すもの、図６は、同断面の側面図である。高周波帯デバイス１は２つの第２部品４Ａ、４Ｂを含む。両者を区別するため、各部品及び各部品を構成する部材に、必要に応じて「Ａ」、「Ｂ」の文字をそれぞれ付している。これら第２部品４Ａと第２部品４Ｂは、第２部品４Ａの第１雄端子４１Ａは外部に突出したピン形状としてあるのに対して、第２部品４Ｂの第１雌端子４１Ｂは相手同軸コネクタの第１雄端子４１Ａが収容され得るように円筒状の誘込形状としてある点においてのみ相違する。この相違は相手同軸コネクタの第１雄端子の形状との関係で生じるものであって、ここでは重要ではない。従って、第２部品４Ａと第２部品４Ｂは、本実施形態においては、実質的には同じものと考えることができる。尚、便宜上、図３乃至図６には、第２部品４Ａ、４Ｂのうち、第２部品４Ｂのみが示され、第２部品４Ａは示されていないが、第２部品４Ａの構成は、上記の説明、及び、図２乃至図６から明らかとなろう。 5 and 6 in addition to FIGS. 2 to 4, the configuration of the second parts 4A and 4B will be described in more detail. FIG. 5 is a perspective view showing the second part 4B together with a part of the first part 6 (the first connection pipe 81B), showing a centerline cross section thereof, and FIG. is a side view of the. The high frequency band device 1 includes two second parts 4A, 4B. In order to distinguish between the two, the letters "A" and "B" are attached to each part and the members constituting each part as necessary. The first male terminal 41A of the second part 4A and the second part 4B have a pin shape projecting outward, while the first female terminal 41B of the second part 4B has a mating coaxial connector. The only difference is that it has a cylindrical lead-in shape so that the first male terminal 41A can be accommodated therein. This difference is caused by the shape of the first male terminal of the mating coaxial connector, and is not important here. Therefore, the second part 4A and the second part 4B can be considered substantially the same in this embodiment. For the sake of convenience, only the second part 4B of the second parts 4A and 4B is shown in FIGS. 3 to 6, and the second part 4A is not shown. , and from FIGS. 2-6.

第２部品４Ｂは、絶縁座４０Ｂを介して第１雌端子４１Ｂと第２雌端子４２Ｂを対向側に有する端子部４３Ｂと、この端子部４３Ｂの外側を包囲して端子部４３Ｂに支持、固定された外部導体部４４Ｂから成る。外部導体部４４Ｂは、更に、第２シェル２２に設けた円筒中空部２４Ｂに挿入される本体４６ａＢと、第２シェル２２の後側の円環状壁面２９と対向させた状態で、且つ、第１接続管８１Ｂの環状面と整列され突き合わされた状態で設けた円環板状のフランジ４６ｂＢを含む。第１接続管８１Ｂと外部導体部４４Ｂの間に流れる（グランド）信号に雑音が生じることを防止するため、外部導体部４４Ｂに面した第１接続管（導電部材）８１Ｂの環状面に、第１雌端子４１Ｂや第２雌端子４２Ｂを通過する中心線「ｐ」に対して同心状に半円環状の凸状部８１ａＢを設けている。凸状部８１ａＢを設けたことにより、第１接続管８１Ｂの環状面と外部導体部４４Ｂのフランジ４６ｂＢを確実に当接させることができ、この結果、第１接続管８１Ｂと外部導体部４４Ｂとの間で流れる信号を、凸状部８１ａＢを通じて、言い換えれば、第１接続管８１Ｂや外部導体部４４Ｂの面方向に分散させることなく流すことができ、周波数特性の改善が図られる。 The second component 4B includes a terminal portion 43B having a first female terminal 41B and a second female terminal 42B on opposite sides via an insulating seat 40B, and a terminal portion 43B surrounding the outside of the terminal portion 43B and supported and fixed to the terminal portion 43B. The outer conductor portion 44B is formed by The outer conductor portion 44B further includes a main body 46aB inserted into the cylindrical hollow portion 24B provided in the second shell 22, and a main body 46aB facing the annular wall surface 29 on the rear side of the second shell 22, and the first outer conductor portion 44B. It includes an annular plate-like flange 46bB provided in alignment and abutment with the annular surface of connecting tube 81B. In order to prevent noise from occurring in (ground) signals flowing between the first connection pipe 81B and the external conductor portion 44B, the annular surface of the first connection pipe (conductive member) 81B facing the external conductor portion 44B is provided with a A semicircular convex portion 81aB is provided concentrically with respect to the center line "p" passing through the first female terminal 41B and the second female terminal 42B. By providing the convex portion 81aB, the annular surface of the first connection pipe 81B and the flange 46bB of the outer conductor portion 44B can be reliably brought into contact with each other. A signal flowing between the first connecting pipe 81B and the outer conductor portion 44B can be flowed through the convex portion 81aB, in other words, without being dispersed in the planar direction of the first connecting pipe 81B and the external conductor portion 44B, thereby improving the frequency characteristics.

同様に、第２部品４Ａは、絶縁座４０Ａを介して第１雄端子４１Ａと第２雌端子４２Ａを対向側に有する端子部４３Ａと、この端子部４３Ａの外側を包囲して端子部４３Ａに支持、固定された外部導体部４４Ａから成る。外部導体部４４Ａは、更に、第１シェル２１に設けた円筒中空部２３ａＡに挿入される本体４６ａＡと、円筒中空部２３ａＢに該円筒中空部２３ａＢのフランジ２７と対向させた状態で、且つ、第１接続管８１Ａの環状面と整列され突き合わされた状態で設けた円環板状のフランジ４６ｂＡを含む。第１接続管８１Ａと外部導体部４４Ａの間に流れる（グランド）信号に雑音が生じることを防止するため、外部導体部４４Ａに面した第１接続管８１Ａの環状面に、第１雌端子４１Ｂや第２雌端子４２Ａを通過する中心線「ｐ」に対して同心状に半円環状の凸状部８１ａＡを設けている。凸状部８１ａＡを設けたことにより、第１接続管８１Ａの環状面と外部導体部４４Ａのフランジ４６ｂＡを確実に当接させることができ、この結果、第１接続管８１Ａと外部導体部４４Ａとの間で流れる信号を、凸状部８１ａＡを通じて、言い換えれば、第１接続管８１Ａや外部導体部４４Ａの面方向に分散させることなく流すことができ、周波数特性の改善が図られる。 Similarly, the second part 4A includes a terminal portion 43A having a first male terminal 41A and a second female terminal 42A on opposing sides via an insulating seat 40A, and a terminal portion 43A surrounding the outside of the terminal portion 43A. It consists of an outer conductor portion 44A that is supported and fixed. The external conductor portion 44A further includes a main body 46aA inserted into a cylindrical hollow portion 23aA provided in the first shell 21, a state in which the cylindrical hollow portion 23aB faces the flange 27 of the cylindrical hollow portion 23aB, and a 1 includes an annular plate-like flange 46bA provided in alignment and abutment with the annular surface of the connecting pipe 81A. In order to prevent noise from occurring in (ground) signals flowing between the first connection pipe 81A and the external conductor portion 44A, the first female terminal 41B is provided on the annular surface of the first connection pipe 81A facing the external conductor portion 44A. A semicircular convex portion 81aA is provided concentrically with respect to the center line "p" passing through the second female terminal 42A. By providing the convex portion 81aA, the annular surface of the first connecting pipe 81A and the flange 46bA of the outer conductor portion 44A can be reliably brought into contact with each other. A signal flowing between the first connecting pipe 81A and the outer conductor portion 44A can be flowed through the convex portion 81aA, in other words, without being dispersed in the planar direction of the first connecting pipe 81A and the external conductor portion 44A, thereby improving the frequency characteristics.

各第２部品４Ａ、４Ｂにおいて、端子部４３Ａ、４３Ｂと外部導体部４４Ａ、４４Ｂは、樹脂４７Ａ、４７Ｂによって互いに固定され得る。端子部４３Ａ、４３Ｂを外部導体部４４Ａ、４４Ｂに挿入して、それらの中心を通じて貫通する整合穴４５Ａ、４５Ｂを整合させた後、これらの整合穴４５Ａ、４５Ｂに樹脂４７Ａ、４７Ｂを流し込むことにより、それらを所望の向きで互いに固定することができる。 In each of the second parts 4A, 4B, the terminal portions 43A, 43B and the external conductor portions 44A, 44B can be fixed to each other by resins 47A, 47B. After inserting the terminal portions 43A and 43B into the outer conductor portions 44A and 44B and aligning the alignment holes 45A and 45B penetrating through their centers, resins 47A and 47B are poured into these alignment holes 45A and 45B. , they can be fixed together in a desired orientation.

高周波帯デバイス１の実際の使用時には、第２部品４Ａの外部導体部４４Ａは、相手同軸コネクタの相手側外部導体（図示されていない）と電気的に接続され、一方、第２部品４Ａの端子部４３Ａは、その第１雄端子４１Ａにおいて、相手同軸コネクタの相手側中心導体（図示されていない）と電気的に接続されて電気信号を受信する。 When the high frequency band device 1 is actually used, the outer conductor portion 44A of the second part 4A is electrically connected to the mating outer conductor (not shown) of the mating coaxial connector, while the terminal of the second part 4A is electrically connected. The portion 43A is electrically connected at its first male terminal 41A to a mating center conductor (not shown) of a mating coaxial connector to receive electrical signals.

外部導体部４４Ａによって受信された信号は、その後、第１部品６の第１接続管８１Ａ、第２接続管８２、第１接続管８１Ｂをこの順に介して、第２部品４Ｂの外部導体部４４Ｂへ伝達され得る。一方、第１雄端子４１Ａによって受信された信号は、その後、第２雌端子４２Ａを介して、第１部品６の中継部８３Ａや抵抗基板６２に伝達され、抵抗基板６２で抵抗によって減衰された後、第１雌端子４１Ｂへ伝達され得る。 The signal received by the outer conductor portion 44A then passes through the first connecting pipe 81A, the second connecting pipe 82, and the first connecting pipe 81B of the first component 6 in this order, and then the outer conductor portion 44B of the second component 4B. can be transmitted to On the other hand, the signal received by the first male terminal 41A is then transmitted to the relay portion 83A of the first component 6 and the resistance substrate 62 via the second female terminal 42A, and attenuated by the resistance of the resistance substrate 62. After that, it can be transmitted to the first female terminal 41B.

以上の電気信号の流れによって、高周波帯デバイス１を利用して、第１シェル２１側に接続された相手コネクタと第２シェル２２側に接続された相手コネクタを、減衰機能を付加した状態で接続させることができる。 By the flow of the electric signals described above, the high-frequency band device 1 is used to connect the mating connector connected to the first shell 21 side and the mating connector connected to the second shell 22 side in a state in which an attenuation function is added. can be made

次に、図２に加えて、図７乃至図１０をも参照して、第１部品６の基本構成を説明する。図７は、第１部品６の分解斜視図であり、図８は、その組立中間工程図、図９は、その組立完成図である。また、図１０は、図９の断面図、更に言えば、第１部品６の構成部品の１つである抵抗基板６２の上面沿いの水平断面図である。 Next, the basic configuration of the first component 6 will be described with reference to FIGS. 7 to 10 in addition to FIG. FIG. 7 is an exploded perspective view of the first part 6, FIG. 8 is an assembly intermediate process diagram, and FIG. 9 is an assembly completed diagram. 10 is a cross-sectional view of FIG. 9, more specifically, a horizontal cross-sectional view along the upper surface of the resistance substrate 62, which is one of the components of the first component 6. As shown in FIG.

第１部品６は、左右対称形状を有し、中央に配置される第２接続管８２と、第２接続管８２を挟み込んだ状態で第２接続管８２の左右各側に配置される一対の第１接続管８１Ａ、８１Ｂと、これら第２接続管８２と第１接続管８１Ａ、８１Ｂの中心に挿入される抵抗基板６２と、更に、抵抗基板６２の左右両側にそれぞれ固定される中継部８３Ａ、８３Ｂを備える。第２接続管８２と第１接続管８１Ａ、８１Ｂは、それら全体で、導電部材を形成している。 The first part 6 has a bilaterally symmetrical shape and includes a second connecting pipe 82 arranged in the center and a pair of connecting pipes arranged on the left and right sides of the second connecting pipe 82 with the second connecting pipe 82 sandwiched therebetween. First connecting pipes 81A and 81B, a resistor substrate 62 inserted into the center of the second connecting pipe 82 and the first connecting pipes 81A and 81B, and relay portions 83A fixed to the left and right sides of the resistor substrate 62, respectively. , 83B. The second connecting pipe 82 and the first connecting pipes 81A, 81B together form a conductive member.

第２接続管８２は、所定の厚みを有する円環板状の部材として形成されており、導電性の良い部材であって、しかも、少なくともその表面が、第１接続管８１Ａ、８１Ｂよりも半田ぬれ性が良い部材、つまり、半田付けに適した（半田がつきやすい、半田ぬれ性のよい）部材、例えば、全体を金メッキした黄銅でできている。第２接続管８２には、中心線「ｐ」に沿う方形の貫通穴８４が設けられている。この方形の貫通穴８４には更に、抵抗基板６２を組み込むため、直径方向における対向位置に、板厚方向（「ｐ」に沿う方向）に沿って一対の方形の通路（第２通路）８５Ａ、８５Ｂが設けられている。これらの通路８５Ａ、８５Ｂが形成する直径方向における長さは、抵抗基板６２の横幅と略同じか若干大きい。また、各方形通路８５Ａ、８５Ｂの上下幅は、抵抗基板６２の厚みと略同じか若干大きい。抵抗基板６２は、左右の方形通路８５Ａ、８５Ｂに水平方向にて挿入され、水平方向にて対向する辺においてそこに保持される。 The second connection pipe 82 is formed as an annular plate-shaped member having a predetermined thickness, and is a member having good electrical conductivity. It is made of a member with good wettability, that is, a member suitable for soldering (easily attached to solder, with good solder wettability), for example, brass plated entirely with gold. The second connecting tube 82 is provided with a square through-hole 84 along the centerline "p". Further, in order to incorporate the resistor substrate 62 into the rectangular through-hole 84, a pair of rectangular passages (second passages) 85A are provided along the plate thickness direction (direction along "p") at diametrically opposite positions. 85B is provided. The length in the diameter direction formed by these passages 85A and 85B is approximately the same as or slightly larger than the lateral width of the resistor substrate 62. As shown in FIG. Moreover, the vertical width of each of the square passages 85A and 85B is substantially the same as or slightly larger than the thickness of the resistor substrate 62. As shown in FIG. The resistor substrate 62 is inserted horizontally into the left and right rectangular passages 85A, 85B and is retained therein at horizontally opposite sides.

第１接続管８１Ａ、８１Ｂは、第２接続管８２と同様に、所定の厚みを有する円環板状の部材として形成されているが、第２接続管８２より大きな径を有する。また、第１接続管８１Ａ、８１Ｂは、第２接続管８２と異なり、導電性の良い部材であるが、少なくともその表面が、半田付けに適さない（半田がつきにくい）部材、例えば、アルミでできている。第１接続管８１Ａ、８１Ｂには、中心線「ｐ」に沿う円形の貫通穴８６Ａ、８６Ｂが設けられている。各貫通穴８６Ａ、８６Ｂには更に、抵抗基板６２を組み込むため、直径方向における対向位置に、板厚方向（「ｐ」に沿う方向）に沿って一対の半円状の通路（第１通路）８７Ａ、８７Ｂがそれぞれ設けられている。これらの通路８７Ａ、８７Ｂが形成する直径方向における長さは、抵抗基板６２の横幅と略同じか若干大きい。各円形通路８７Ａ、８７Ｂの上下幅は、抵抗基板６２の厚みより大きく、従って、各方形通路８５Ａ、８５Ｂの上下幅よりも大きく設定されており、したがって、少なくとも上下方向において、抵抗基板６２は、これら半円通路８７Ａ、８７Ｂに遊嵌される。尚、半円通路８７Ａ、８７Ｂの横幅の大きさを、方形通路８５Ａ、８５Ｂの大きさよりも大きく設定し、横方向においても、抵抗基板６２を半円通路８７Ａ、８７Ｂに遊嵌させるようにしてもよい。 The first connection pipes 81A and 81B are formed as annular plate-shaped members having a predetermined thickness, like the second connection pipe 82, but have a diameter larger than that of the second connection pipe 82. As shown in FIG. Unlike the second connection pipe 82, the first connection pipes 81A and 81B are made of a member with good conductivity, but at least the surface thereof is made of a member unsuitable for soldering (hard to solder), such as aluminum. is made of. The first connection pipes 81A, 81B are provided with circular through holes 86A, 86B along the center line "p". Each of the through holes 86A and 86B further includes a pair of semicircular passages (first passages) along the plate thickness direction (direction along "p") at diametrically opposed positions to incorporate the resistor substrate 62. 87A and 87B are provided respectively. The length in the diameter direction formed by these passages 87A and 87B is approximately the same as or slightly larger than the lateral width of the resistor substrate 62. As shown in FIG. The vertical width of each of the circular passages 87A and 87B is larger than the thickness of the resistor board 62, and therefore is set larger than the vertical width of each of the rectangular channels 85A and 85B. It is loosely fitted in these semicircular passages 87A and 87B. The width of the semi-circular passages 87A, 87B is set larger than that of the rectangular passages 85A, 85B, and the resistance substrate 62 is loosely fitted in the semi-circular passages 87A, 87B in the horizontal direction as well. good too.

第２接続管８２の片側の側面に、第２接続管８２の形状に対応して、第２接続管８２の片側側面を内包できる大きさの円形窪み８８Ａ、８８Ｂが設けられており、第１接続管８１Ａ、８１Ｂに設けたそれぞれの円形窪み８８Ａ、８８Ｂに、第２接続管８２の厚みの半分よりも小さな厚み部分を収容させ、第１接続管８１Ａと８１Ｂを離間した状態で互いに対向配置することができる。第１接続管８１Ａ、８１Ｂの円形窪み８８Ａ、８８Ｂを利用して、第１接続管８１Ａ、８１Ｂと第２接続管８２を接触させ、これらの接触を通じて、異種金属、即ち、金メッキした黄銅とアルミとが組み合わされるともに、第２接続管８２に設けた方形通路８５Ａ、８５Ｂと第１接続管８１Ａ、８１Ｂに設けた半円通路８７Ａ、８７Ｂが略一直線上に並んで、板厚方向にて連通した一対の通路（８７Ａ、８７Ｂ、８５Ａ、８５Ｂ）を形成する。抵抗基板６２は、この一対の通路（８７Ａ、８７Ｂ、８５Ａ、８５Ｂ）に挿通され、設置される。尚、このように、第２接続管８２の貫通穴８４より、第１接続管８１Ａ、８１Ｂの貫通穴８６Ａ、８６Ｂの径が大きいのは、中継部の外形との距離が電気特性と関係しているからである。 Circular recesses 88A and 88B are provided on one side surface of the second connecting pipe 82 and are large enough to enclose one side surface of the second connecting pipe 82 corresponding to the shape of the second connecting pipe 82. Circular recesses 88A and 88B provided in the connecting pipes 81A and 81B accommodate portions having a thickness smaller than half the thickness of the second connecting pipe 82, and the first connecting pipes 81A and 81B are arranged to face each other while being spaced apart. can do. The circular depressions 88A, 88B of the first connecting pipes 81A, 81B are used to bring the first connecting pipes 81A, 81B and the second connecting pipe 82 into contact, and through these contacts, dissimilar metals, namely gold-plated brass and aluminum are combined, and the square passages 85A, 85B provided in the second connecting pipe 82 and the semicircular passages 87A, 87B provided in the first connecting pipes 81A, 81B are aligned substantially on a straight line and communicate in the plate thickness direction. A pair of passages (87A, 87B, 85A, 85B) are formed. The resistance substrate 62 is inserted and installed in the pair of passages (87A, 87B, 85A, 85B). The reason why the through holes 86A and 86B of the first connecting pipes 81A and 81B are larger in diameter than the through hole 84 of the second connecting pipe 82 is that the distance from the outer shape of the relay portion is related to the electrical characteristics. because

抵抗基板６２は、左右対称形状の平板状のチップ型抵抗であって、図１０によく示されているように、一方の対向辺に信号接続部６８Ａ、６８Ｂを有し、他方の対向辺にグランド接続部６９Ａ、６９Ｂを有する。信号接続部６８Ａ、６８Ｂは、一方の対向辺の一部の長さ部分にのみ設けてあり、グランド接続部６９Ａ、６９Ｂは、他方の対向辺の全長さ部分に設けてある。尚、図面からは明らかでないが、抵抗基板６２の表裏（上下）各面に、同じ形状の抵抗パターンが形成されていると考えてよい。信号接続部６８Ａと６８Ｂの間は、並列に配置された２本の信号線７０Ａ、７０Ｂによって接続されている。これらの各信号線７０Ａ、７０Ｂは、それぞれ、２本のグランド線７１（Ａ、Ｂ）、７５（Ａ、Ｂ）を通じて、グランド接続部６９Ａ、６９Ｂに接続されており、これにより、信号接続部６８Ａと６８Ｂの間に流れる信号に所定の抵抗を与えてそれを減衰させるものである。 The resistor substrate 62 is a symmetrical plate-like chip-type resistor, and has signal connection portions 68A and 68B on one opposing side and a It has ground connection portions 69A and 69B. The signal connection portions 68A and 68B are provided only along a partial length of one opposing side, and the ground connection portions 69A and 69B are provided along the entire length of the other opposing side. Although it is not clear from the drawing, it can be considered that resistor patterns having the same shape are formed on each of the front and back (upper and lower) surfaces of the resistor substrate 62 . The signal connection portions 68A and 68B are connected by two signal lines 70A and 70B arranged in parallel. These signal lines 70A and 70B are connected to ground connection portions 69A and 69B through two ground lines 71 (A and B) and 75 (A and B), respectively. A predetermined resistance is applied to the signal flowing between 68A and 68B to attenuate it.

高周波帯デバイスの組立時において、各信号接続部６８Ａ、６８Ｂは、それぞれ、中継部８３Ａや８３Ｂと半田付けされ、これらの接続を通じて相手同軸コネクタの相手側中心導体と電気的に接続され得る。信号接続部６８Ａ、６８Ｂは、中継部８３Ａ、８３Ｂとの接続が容易になるように、接続側、つまり、対向辺側において中央部に比べて比較的大きな面積を有している。一方、抵抗基板６２の一対の縁部に設けたグランド接続部６９Ａ、６９Ｂは、第２接続管８２に設けた方形通路８５Ａ、８５Ｂと第１接続管８１Ａ、８１Ｂに設けた半円通路８７Ａ、８７Ｂによって形成される連通した一対の通路（８７Ａ、８７Ｂ、８５Ａ、８５Ｂ）に挿通され、第２接続管８２の近傍、例えば、それを貫通する方形通路８５Ａ、８５Ｂの内部やその周辺で抵抗基板６２のグランド接続部６９Ａ、６９Ｂと半田付けされて導通し、これらの接続や第２接続管８２及び第１接続管８１Ａ、８１Ｂとの接続を通じて、外部導体部４４Ａ、４４Ｂ（図２乃至６参照）、更には、相手同軸コネクタの相手側外部導体と電気的に接続され得る。この場合、図３、図７によく示されるように、凸状部８１ａＡ、８１ａＢの環状の軌跡は、グランド接続部６９Ａ、６９Ｂを通るのが好ましい。これにより、外部導体部４４Ａ、４４Ｂと、第１接続管８１Ａ及び第１接続管８１Ｂとの間のグランド接続を、より効率的に且つ確実に行うことができる。更に言えば、この構成によって、凸状部８１ａＡ、８１ａＢとグランド接続部６９Ａ、６９Ｂをより接近させて、グランド接続部６９Ａ、６９Ｂを通じた信号を、より直接的に、言い換えれば、最短の距離で、外部導体部４４Ａ、４４Ｂに伝達し、信号に雑音が生じることを防止して、周波数特性の改善を図ることができる。 When assembling the high frequency band device, the signal connection portions 68A and 68B are soldered to the relay portions 83A and 83B, respectively, and can be electrically connected to the mating center conductor of the mating coaxial connector through these connections. The signal connection portions 68A and 68B have a relatively large area on the connection side, that is, on the opposite sides, compared to the central portion so as to facilitate connection with the relay portions 83A and 83B. On the other hand, the ground connection portions 69A and 69B provided at the pair of edge portions of the resistor substrate 62 are composed of square passages 85A and 85B provided in the second connection pipe 82, semicircular passages 87A provided in the first connection pipes 81A and 81B, 87B formed by a pair of communicating passages (87A, 87B, 85A, 85B) and near the second connection tube 82, for example, inside and around the square passages 85A, 85B passing through it 62 are soldered to the ground connection portions 69A and 69B, and the external conductor portions 44A and 44B (see FIGS. 2 to 6 ), and can be electrically connected to the mating outer conductor of the mating coaxial connector. In this case, as well shown in FIGS. 3 and 7, the annular trajectories of the convex portions 81aA and 81aB preferably pass through the ground connection portions 69A and 69B. Thereby, the ground connection between the external conductor portions 44A and 44B and the first connecting pipes 81A and 81B can be performed more efficiently and reliably. Furthermore, with this configuration, the convex portions 81aA and 81aB and the ground connection portions 69A and 69B are brought closer to each other, so that the signals through the ground connection portions 69A and 69B can be transmitted more directly, in other words, at the shortest distance. , and the external conductors 44A and 44B, thereby preventing noise from occurring in the signal and improving the frequency characteristics.

抵抗基板６２のグランド接続部６９Ａ、６９Ｂの第２接続管８２に対する半田付けは、第１部品６を図９の完成状態とした後に、例えば、半円通路８７Ａ、８７Ｂの入口付近の内面とグランド接続部６９Ａ、６９Ｂの縁付近との隙間Ａにペースト半田を盛って、第１部品６をリフローしてペースト半田を溶融することによって簡単に行うことができる。このとき、溶融された半田は、第２接続管８２に設けた方形通路８５Ａ、８５Ｂと第１接続管８１Ａ、８１Ｂに設けた半円通路８７Ａ、８７Ｂとによって形成された通路の隙間で毛細管現象を利用して、且つ、半田がつきにくい第１接続管８１Ａ、８１Ｂを利用して、半田がつきやすい第２接続管８２へ自然に流れ込んで、例えば図１０に示すような半田７６Ａ、７６Ｂによって、第２接続管８２の方形通路８５Ａ、８５Ｂの近傍にて実装される。 The soldering of the ground connection portions 69A and 69B of the resistor board 62 to the second connection tube 82 is performed after the first component 6 is brought into the completed state shown in FIG. This can be easily done by filling the gap A between the edges of the connecting portions 69A and 69B with solder paste and reflowing the first component 6 to melt the solder paste. At this time, the melted solder is caused by capillarity in the gaps between the passages formed by the rectangular passages 85A and 85B provided in the second connecting pipe 82 and the semicircular passages 87A and 87B provided in the first connecting pipes 81A and 81B. and the first connecting pipes 81A and 81B to which solder is difficult to adhere naturally flow into the second connecting pipe 82 to which solder is difficult to adhere, for example, by solders 76A and 76B as shown in FIG. , near the square passages 85A and 85B of the second connecting pipe 82. As shown in FIG.

主として図１０、図２を参照して、中継部８３Ａ、８３Ｂの構成を説明する。中継部８３Ａ、８３Ｂは、抵抗基板６２の中心線（「ｐ」）に沿って設けられ、抵抗基板６２と接続される接続端子６４Ａ、６４Ｂと、この接続端子６４Ａ、６４Ｂのフランジ６５Ａ、６５Ｂを境として、第２接続管８２や第１接続管８１Ａ、８１Ｂの側に円筒状の接合管６６Ａ、６６Ｂを、及び、その反対側の第２部品４Ａ、４Ｂの側に円筒状の中継管６７Ａ、６７Ｂを、それぞれ有する。 Mainly referring to FIGS. 10 and 2, the configuration of the relay units 83A and 83B will be described. The relay portions 83A, 83B are provided along the center line ("p") of the resistance substrate 62, and connect the connection terminals 64A, 64B connected to the resistance substrate 62 and the flanges 65A, 65B of the connection terminals 64A, 64B. As a boundary, cylindrical connecting pipes 66A and 66B are provided on the side of the second connecting pipe 82 and the first connecting pipes 81A and 81B, and a cylindrical relay pipe 67A is provided on the side of the second parts 4A and 4B on the opposite side. , 67B, respectively.

中継部８３Ａ、８３Ｂの端部には、半月状の断面を有しそれらの間にスリットを形成しているようなスリット部材７２Ａ、７２Ｂが設けられており、これらスリット部材７２Ａ、７２Ｂの間に抵抗基板６２の信号接続部６８Ａ、６８Ｂが挿入される。その後、これらスリット部材７２Ａ、７２Ｂの筒内に半田を盛ることにより、中継部８３Ａ、８３Ｂは抵抗基板６２に固定されるようになっている。抵抗基板６２に固定された中継部８３Ａ、８３Ｂは、第２接続管８２や第１接続管８１Ａ、８１Ｂの中心を通る位置において、第２接続管８２から第１接続管８１Ａ、８１Ｂに向かう方向、即ち、中心線「ｐ」に沿って第１接続管８１Ａ、８１Ｂの外方に延びる。 Slit members 72A and 72B having a half-moon cross section and forming a slit therebetween are provided at the ends of the relay portions 83A and 83B. The signal connection portions 68A, 68B of the resistor board 62 are inserted. After that, the relay portions 83A and 83B are fixed to the resistor substrate 62 by filling the cylinders of the slit members 72A and 72B with solder. The relay portions 83A and 83B fixed to the resistance substrate 62 are arranged in the direction from the second connection pipe 82 to the first connection pipes 81A and 81B at positions passing through the centers of the second connection pipe 82 and the first connection pipes 81A and 81B. That is, it extends outward from the first connection pipes 81A, 81B along the centerline "p".

第２部品４Ａ、４Ｂと第１部品６を接続したとき、これらの部品は、第１部品６の中継端子６７と第２部品４Ａ、４Ｂの第２雌端子４２Ａ、４２Ｂとを利用して、少なくとも軸方向においてバネ構造によって弾性接続される。バネ構造を達成するため、中継管６７Ａ、６７Ｂには、第２部品４Ａ、４Ｂとの接続側において中心を通る横方向にスリ割り７４Ａ、７４Ｂが設けてある。このような構成において、第２部品４Ａ、４Ｂと第１部品６が軸方向にて互いに接近したとき、先ず、第１部品６の接続端子６４Ａ、６４Ｂの中心から軸方向に延びるガイドピン７７Ａ、７７Ｂが、第２部品４Ａ、４Ｂの第２雌端子４２Ａ、４２Ｂの入り口の穴５０Ａ、５０Ｂに誘い込まれ、更に接近したときに、ガイドピン７７Ａ、７７Ｂが、穴５０Ａ、５０Ｂの更に奥のガイド穴５１Ａ、５１Ｂへ案内されるとともに、中継管６７Ａ、６７Ｂのスリ割り７４Ａ、７４Ｂが、第２雌端子４２Ａ、４２Ｂの入り口の穴５０Ａ、５０Ｂに軸方向にて押し込まれて弾性変形される。これにより、第２部品４Ａ、４Ｂと第１部品６を弾性接続させることができる。この弾性接続により、高周波帯デバイス１（雄端子）と相手同軸コネクタ（雌端子）とを嵌合させる際にそれらの間に生じるストレスを排除することができ、また、それらの間に生じ得る嵌合ギャップを許容することができ、更に、抵抗基板６２と中継部８３Ａ、８３Ｂ（スリット部材７２Ａ、７２Ｂ）における半田部や、抵抗基板６２と第２接続管８２における半田部に、実質的にストレスがかかることがない。 When the second parts 4A, 4B and the first part 6 are connected, these parts utilize the relay terminals 67 of the first part 6 and the second female terminals 42A, 42B of the second parts 4A, 4B to It is elastically connected by a spring structure at least in the axial direction. In order to achieve a spring structure, the relay pipes 67A, 67B are provided with lateral slits 74A, 74B through the center on the connection side with the second parts 4A, 4B. In such a configuration, when the second parts 4A, 4B and the first part 6 approach each other in the axial direction, the guide pins 77A extending axially from the centers of the connection terminals 64A, 64B of the first part 6; 77B is guided into the holes 50A and 50B at the entrances of the second female terminals 42A and 42B of the second parts 4A and 4B, and when they are further approached, the guide pins 77A and 77B are pushed deeper into the holes 50A and 50B. While being guided to the guide holes 51A, 51B, the slits 74A, 74B of the relay pipes 67A, 67B are axially pushed into the entrance holes 50A, 50B of the second female terminals 42A, 42B and elastically deformed. . Thereby, the second parts 4A, 4B and the first part 6 can be elastically connected. This elastic connection makes it possible to eliminate stress generated between the high-frequency band device 1 (male terminal) and the mating coaxial connector (female terminal) when they are mated, and also eliminates any possible mating stress between them. In addition, the solder portions between the resistor substrate 62 and the relay portions 83A and 83B (slit members 72A and 72B) and the solder portions between the resistor substrate 62 and the second connecting tube 82 are substantially stressed. It doesn't take much.

尚、本発明は、上述した実施の形態に限定されるわけではなく、その他種々の変更が可能である。
例えば、外部導体部４４Ａ、４４Ｂのフランジ４６ｂＡ、４６ｂＢと、第１接続管８１Ａ、８１Ｂの環状面とを、より確実に当接させるため、それらの間に導電性のシートを介挿してもよい。図１１は、一例としてのシート１００を第１部品６、更に言えば、第１部品６を構成する第１接続管８１Ａ及び第１接続管８１Ｂの環状面に配した状態を示す斜視図、また、図１２は、その側面図である。便宜上、第２部品４Ａ、４Ｂは示していないが、シート１００は、第２部品４Ａ、４Ｂと第１部品６との間に挟み込まれるものとする。シート１００を設けることにより、第２部品４Ａ、４Ｂの外部導体部４４Ａ、４４Ｂのフランジ４６ｂＡ、４６ｂＢと、第１接続管８１Ａ及び第１接続管８１Ｂ、特に、その環状面に設けた凸状部８１ａＡ、８１ａＢとの間に隙間が形成されてしまうことを減らすことができ、それらをより確実に当接させることができる。シート１００の厚みを考慮して、外部導体部４４Ａ、４４Ｂのフランジ４６ｂＡ、４６ｂＢに、環状の凹状部４８Ａ、４６Ｂを設けてもよい。尚、凸状部８１ａＡ、８１ａＢを設けずに、シート１００を設けても効果が得られることは勿論である。 It should be noted that the present invention is not limited to the above-described embodiments, and various other modifications are possible.
For example, a conductive sheet may be interposed between the flanges 46bA and 46bB of the outer conductor portions 44A and 44B and the annular surfaces of the first connecting pipes 81A and 81B to more reliably abut them. . FIG. 11 is a perspective view showing a state in which the sheet 100 as an example is arranged on the annular surface of the first component 6, or more specifically, the first connecting pipe 81A and the first connecting pipe 81B that constitute the first component 6; , and FIG. 12 is a side view thereof. Although the second parts 4A, 4B are not shown for convenience, the sheet 100 is sandwiched between the second parts 4A, 4B and the first part 6. As shown in FIG. By providing the sheet 100, the flanges 46bA, 46bB of the outer conductor portions 44A, 44B of the second parts 4A, 4B, the first connecting pipes 81A and 81B, especially the convex portions provided on the annular surfaces thereof It is possible to reduce the formation of gaps between 81aA and 81aB, and to more reliably bring them into contact with each other. Considering the thickness of the sheet 100, annular concave portions 48A and 46B may be provided in the flanges 46bA and 46bB of the outer conductor portions 44A and 44B. Of course, the effect can be obtained even if the sheet 100 is provided without providing the convex portions 81aA and 81aB.

図１３の（ａ）に、シート１００の使用前の状態を斜視図で、また、図１３の（ｂ）に、その状態を正面図で示し、更に、図１４の（ａ）に、シート１００の使用中の状態を斜視図で、また、図１４の（ｂ）に、その状態を正面図で示す。シート１００は、外部導体部４４Ａ、４４Ｂのフランジ４６ｂＡ、４６ｂＢと、第１接続管８１Ａ、８１Ｂの環状面との間に単に挟み込んでもよいが、シート１００に挿入片１０３を設けて、これらを、抵抗基板６２のグランド接続部６９Ａ、６９Ｂ（図７、図１０等参照）と、通路８７Ａ、８７Ｂ、８５Ａ、８５Ｂとの間に介挿させることによって、外部導体部４４Ａ、４４Ｂと、第１接続管８１Ａ、８１Ｂとの間の電気的な接続をより確実に行わせることができる。この場合、挿入片１０３は、例えば、図１３に示すように、使用前は、略Ｔ字状の挿入片１０３として形成し、使用の際は、図１４に示すように、側面視略コの字状として、抵抗基板６２等の側に突出させた挿入片１０３Ａを形成し、この挿入片１０３Ａを、抵抗基板６２のグランド接続部６９Ａ、６９Ｂと、通路８７Ａ、８７Ｂ、８５Ａ、８５Ｂとの間に介挿させてもよい。 13(a) shows a perspective view of the seat 100 before use, FIG. 13(b) shows a front view of the seat 100, and FIG. 14(a) shows the seat 100. is a perspective view of the in-use state, and FIG. 14(b) is a front view of the state. The sheet 100 may be simply sandwiched between the flanges 46bA, 46bB of the outer conductor portions 44A, 44B and the annular surfaces of the first connection pipes 81A, 81B. By interposing between the ground connection portions 69A and 69B (see FIGS. 7 and 10) of the resistance substrate 62 and the passages 87A, 87B, 85A and 85B, the external conductor portions 44A and 44B and the first connection are connected. Electrical connection between the tubes 81A and 81B can be made more reliable. In this case, for example, as shown in FIG. 13, the insertion piece 103 is formed as a substantially T-shaped insertion piece 103 before use, and as shown in FIG. An insertion piece 103A projecting toward the resistor board 62 side is formed in a letter shape, and this insertion piece 103A is placed between the ground connection portions 69A and 69B of the resistor board 62 and the passages 87A, 87B, 85A and 85B. may be inserted into

本発明は、他の及び異なる実施形態で構成することもでき、そしてその多数の細部は、本発明の精神及び範囲から逸脱せずに、種々の明らかな観点において変更することができる。従って、図面及び説明は、例示に過ぎず、これに限定されるものではない。 The invention is capable of other and different embodiments, and its numerous details are capable of modifications in various obvious respects, all without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative only and not restrictive.

１高周波帯デバイス
４Ａ、４Ｂ第２部品
６第１部品
２１第１シェル
２２第２シェル
４３Ａ、４３Ｂ端子部
４４Ａ、４４Ｂ外部導体部
６２抵抗基板
６７Ａ、６７Ｂ中継管
６８Ａ、６８Ｂ信号接続部
６９Ａ、６９Ｂグランド接続部
８１Ａ、８１Ｂ第１接続管
８１ａＡ、８１ａＢ凸状部
８２第２接続管
８４方形穴
８５Ａ、８５Ｂ方形の通路
８７Ａ、８７Ｂ半円状の通路 1 High frequency band device 4A, 4B Second part 6 First part 21 First shell 22 Second shell 43A, 43B Terminal part 44A, 44B External conductor part 62 Resistance board 67A, 67B Relay tube 68A, 68B Signal connection part 69A, 69B Ground connection portions 81A, 81B First connecting pipes 81aA, 81aB Convex portion 82 Second connecting pipe 84 Square holes 85A, 85B Square passages 87A, 87B Semicircular passages

Claims

第１部品と第２部品を含み、
前記第１部品は、
抵抗基板と、
前記抵抗基板の信号接続部に前記抵抗基板の中心線に沿って設けた中継手段と、
前記中心線に沿って設けた貫通穴を有する導電部材であって、前記抵抗基板の対向する一対の縁部に設けたグランド接続部が挿通される一対の通路が前記貫通穴に設けられている、前記導電部材と、を備え、
前記第２部品は、
相手同軸コネクタの相手側中心導体と電気的に接続される端子部と、
前記相手同軸コネクタの相手側外部導体と電気的に接続される外部導体部と、を備え、
前記端子部は、前記中継手段を介して前記抵抗基板の信号接続部と電気的に接続され、
前記外部導体部は、前記導電部材を通じて前記抵抗基板のグランド接続部と電気的に接続され、
前記外部導体部に面した前記導電部材の面に、前記外部導体部と当接させる凸状部が前記一対の通路を除く前記貫通穴の縁に沿って設けられていることを特徴とする減衰機能を有する高周波素子。 including a first part and a second part,
The first part is
a resistor substrate;
relay means provided along the center line of the resistor substrate at the signal connection portion of the resistor substrate;
A conductive member having through holes provided along the center line, wherein the through holes are provided with a pair of passages through which ground connecting portions provided at a pair of opposing edges of the resistor substrate are inserted. , and the conductive member,
The second part is
a terminal portion electrically connected to the mating center conductor of the mating coaxial connector;
an external conductor portion electrically connected to the mating external conductor of the mating coaxial connector;
the terminal portion is electrically connected to the signal connection portion of the resistance substrate through the relay means;
The external conductor portion is electrically connected to the ground connection portion of the resistance substrate through the conductive member,
Attenuation characterized in that, on the surface of the conductive member facing the external conductor, a convex portion that abuts against the external conductor is provided along the edge of the through hole excluding the pair of passages. A high-frequency element with a function.

前記凸状部は、前記中心線に対して同心状に設けられている、請求項１に記載の高周波素子。 2. The high-frequency device according to claim 1, wherein said convex portion is provided concentrically with respect to said center line.

前記凸状部の軌跡は、前記抵抗基板のグランド接続部を通る円環状のものである、請求項２に記載の高周波素子。 3. The high-frequency device according to claim 2, wherein the trajectory of said convex portion is an annular locus passing through the ground connecting portion of said resistor substrate.

前記導電部材は、第１接続管と第２接続管を含む、請求項１乃至３のいずれかに記載の高周波素子。 4. The high-frequency device according to claim 1, wherein said conductive member includes a first connecting pipe and a second connecting pipe.

前記凸状部は、前記第２接続管とは反対側の前記第１接続管の面に設けられている、請求項４に記載の高周波素子。 5. The high-frequency device according to claim 4, wherein said convex portion is provided on a surface of said first connection pipe opposite to said second connection pipe.

前記第１接続管は円環板状であって、前記中心線に沿う第１貫通穴を有し、前記第１貫通穴の直径方向における対向位置に、板厚方向に沿って一対の第１通路が設けられている、請求項４又は５に記載の高周波素子。 The first connecting pipe has an annular plate shape, has a first through hole along the center line, and has a pair of first connecting pipes extending in the plate thickness direction at diametrically opposite positions of the first through hole. 6. A high-frequency device according to claim 4 or 5, wherein passages are provided.

前記第２接続管は円環板状であって、前記中心線に沿う第２貫通穴を有し、前記第２貫通穴の直径方向における対向位置に、板厚方向に沿って一対の第２通路が設けられている、請求項６に記載の高周波素子。 The second connection pipe has an annular plate shape, has a second through hole along the center line, and a pair of second connection pipes extending in the plate thickness direction at positions opposed to the second through hole in the diametrical direction. 7. The radio frequency device of claim 6, wherein passages are provided.

前記第１接続管と前記第２接続管は、前記一対の第１通路と前記一対の第２通路を板厚方向にて連通させた状態で配置されている、請求項７に記載の高周波素子。 8. The high-frequency element according to claim 7, wherein said first connecting pipe and said second connecting pipe are arranged in a state in which said pair of first passages and said pair of second passages are communicated in the plate thickness direction. .

前記抵抗基板のグランド接続部は、前記一対の第１通路及び前記一対の第２通路に挿通され、且つ、前記一対の第２通路と導通している、請求項８に記載の高周波素子。 9. The high-frequency device according to claim 8, wherein the ground connection portion of said resistor substrate is inserted through said pair of first passages and said pair of second passages, and is electrically connected to said pair of second passages.

前記第１接続管は、対で設けられており、前記対の第１接続管は、前記第２接続管を挟み込むように配置されている、請求項４乃至９のいずれかに記載の高周波素子。 10. The high-frequency device according to claim 4, wherein said first connecting pipes are provided in pairs, and said pair of first connecting pipes are arranged so as to sandwich said second connecting pipe. .

前記第１接続管と前記外部導体部の間に介挿される導電性シートを更に設けた、請求項４乃至１０の何れかに記載の高周波素子。 11. The high-frequency device according to claim 4 , further comprising a conductive sheet interposed between said first connection pipe and said outer conductor.

前記導電性シートに、前記抵抗基板の前記グランド接続部と、前記通路との間に介挿される、挿入片を設けた、請求項１１に記載の高周波素子。 12. The high-frequency device according to claim 11 , wherein said conductive sheet is provided with an insertion piece interposed between said ground connecting portion of said resistance substrate and said passage.

前記外部導体部は、前記相手同軸コネクタの相手側外部導体と電気的に接続される円環板状部分を有する、請求項１乃至１２のいずれかに記載の高周波素子。 13. The high-frequency device according to claim 1, wherein said outer conductor portion has an annular plate-shaped portion electrically connected to a mating outer conductor of said mating coaxial connector.

前記第１部品と前記第２部品はシェルによって覆われている、請求項１乃至１３のいずれかに記載の高周波素子。 14. The high frequency device according to claim 1, wherein said first part and said second part are covered with a shell.

請求項１乃至１４のいずれかの高周波素子を有する高周波帯デバイス。 A high frequency band device comprising the high frequency element according to any one of claims 1 to 14.