JP7219521B2 - プラチナパターニングのための犠牲層 - Google Patents
プラチナパターニングのための犠牲層 Download PDFInfo
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- JP7219521B2 JP7219521B2 JP2019539221A JP2019539221A JP7219521B2 JP 7219521 B2 JP7219521 B2 JP 7219521B2 JP 2019539221 A JP2019539221 A JP 2019539221A JP 2019539221 A JP2019539221 A JP 2019539221A JP 7219521 B2 JP7219521 B2 JP 7219521B2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims description 260
- 229910052697 platinum Inorganic materials 0.000 title claims description 128
- 238000000059 patterning Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 187
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- -1 aqua regia Chemical compound 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- GKWKOCYSCDZTAX-UHFFFAOYSA-N dichloroboron Chemical compound Cl[B]Cl GKWKOCYSCDZTAX-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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Description
Claims (17)
- プラチナをパターニングするための方法であって、
半導体基板の上に接着層を堆積することと、
前記接着層の上に犠牲層を堆積することと、
前記犠牲層の上にパターニングされたフォトレジスト層を形成することと、
前記接着層の第1の部分を露出させるために前記フォトレジスト層をマスクとして用いて前記犠牲層の一部を除去することと、
前記犠牲層の頂部表面と側壁表面と、前記接着層の前記第1の部分との上にプラチナ層を堆積することと、
前記犠牲層と、前記犠牲層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングし、それによって、前記半導体基板の上にパターニングされたプラチナ層を形成するために前記プラチナ層の残っている部分を残すことと、
を含み、
前記犠牲層と、前記犠牲層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングすることが、単一の処理工程において実施される、方法。 - 請求項1に記載の方法であって、
前記犠牲層の頂部表面と側壁表面と、前記接着層の前記第1の部分との上にプラチナ層を堆積することが、スパッタ堆積プロセスを実施することを含む、方法。 - 請求項1に記載の方法であって、
前記犠牲層と、前記犠牲層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングすることが、前記頂部表面を覆う前記プラチナ層が完全にエッチングされる前に、前記側壁表面を覆う前記プラチナ層の一部に開口を形成するように、或る時間期間の間にウェットエッチングプロセスを実施することを含む、方法。 - 請求項3に記載の方法であって、
前記犠牲層が前記側壁表面を覆う前記プラチナ層の開口から前記ウェットエッチングプロセスのエッチャント材料に曝され、前記犠牲層が前記プラチナ層よりも速い速度でエッチングされる、方法。 - 請求項4に記載の方法であって、
前記エッチャント材料が王水化学物質を含む、方法。 - 請求項1に記載の方法であって、
前記パターニングされたプラチナ層によって覆われていない前記接着層の部分を除去することを更に含む、方法。 - プラチナをパターニングするための方法であって、
基板の上に犠牲層を堆積することと、
前記犠牲層の上にパターニングされたフォトレジスト層を形成することと、
前記基板の頂部表面の一部を露出するために前記フォトレジスト層をマスクとして用いることによって前記犠牲層をパターニングすることと、
前記基板上にプラチナ層をスパッタ堆積することであって、前記プラチナ層が前記パターニングされた犠牲層の頂部表面及び側壁表面と前記基板の頂部表面の前記露出された部分とを覆う、前記プラチナ層をスパッタ堆積することと、
前記パターニングされた犠牲層と前記パターニングされた犠牲層の頂部表面及び側壁表面を覆う前記プラチナ層の一部とを除去し、それによって、前記基板上にパターニングされたプラチナ層を形成するために前記プラチナ層の残っている部分を残すことと、
を含み、
前記パターニングされた犠牲層と前記パターニングされた犠牲層の頂部表面及び側壁表面を覆う前記プラチナ層の一部とを除去することが、単一の処理工程において実施される、方法。 - 請求項7に記載の方法であって、
前記パターニングされた犠牲層と前記パターニングされた犠牲層の頂部表面及び側壁表面を覆う前記プラチナ層の一部とを除去することが、前記犠牲層の側壁表面を覆う前記プラチナ層の一部に開口を形成するように、或る時間期間の間にウェットエッチングプロセスを実施することを含む、方法。 - 請求項7に記載の方法であって、
前記パターニングされた犠牲層と前記パターニングされた犠牲層の頂部表面及び側壁表面を覆う前記プラチナ層の一部とを除去することが、王水エッチャントを用いるウェットエッチングプロセスを含む、方法。 - 請求項7に記載の方法であって、
前記基板上にプラチナ層をスパッタ堆積することが、前記犠牲層の頂部表面上にプラチナのより厚い層を形成し、前記犠牲層の側壁表面上にプラチナのより薄い層を形成する、方法。 - 請求項10に記載の方法であって、
前記犠牲層の頂部表面上の前記プラチナ層の厚みが、前記犠牲層の側壁表面上の前記プラチナ層の厚みの少なくとも2倍である、方法。 - プラチナをパターニングするための方法であって、
半導体基板の上にチタン層を堆積することと、
前記チタン層の上にアルミニウム層を堆積することと、
前記アルミニウム層の上にパターニングされたフォトレジスト層を形成することと、
前記チタン層の第1の部分を露出させるために前記フォトレジスト層をマスクとして用いて前記アルミニウム層の一部を除去することと、
前記アルミニウム層の頂部表面と側壁表面と、前記チタン層の第1の部分との上にプラチナ層を堆積することと、
前記アルミニウム層と、前記アルミニウム層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングし、それによって、パターニングされたプラチナを形成するために前記チタン層の第1部分を覆う前記プラチナ層の残っている部分を残すことと、
を含み、
前記アルミニウム層と、前記アルミニウム層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングすることが、単一の処理工程において実施される、方法。 - 請求項12に記載の方法であって、
前記アルミニウム層と、前記アルミニウム層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングすることが、王水エッチャントを用いるウェットエッチングプロセスを含む、方法。 - 請求項13に記載の方法であって、
前記アルミニウム層と、前記アルミニウム層の頂部表面と側壁表面とを覆う前記プラチナ層の一部とをエッチングすることが、前記頂部表面を覆う前記プラチナ層が完全にエッチングされる前に、前記側壁表面を覆う前記プラチナ層の一部に開口を形成するように、或る時間期間の間に前記ウェットエッチングプロセスを実施することを含む、方法。 - 請求項12に記載の方法であって、
前記プラチナ層を堆積することが、スパッタ堆積工程によって行われる、方法。 - 請求項15に記載の方法であって、
前記スパッタ堆積工程が、前記アルミニウム層の頂部表面上により厚い前記プラチナ層を形成し、前記アルミニウム層の側壁表面上により薄いプラチナ層を形成する、方法。 - 請求項16に記載の方法であって、
前記アルミニウム層の頂部表面上の前記プラチナ層の厚みが、前記アルミニウム層の側壁表面上の前記プラチナ層の厚みの少なくとも2倍である、方法。
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