JP7216828B2 - Mask posture monitoring method, device and mask particle size detector - Google Patents

Mask posture monitoring method, device and mask particle size detector Download PDF

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JP7216828B2
JP7216828B2 JP2021537801A JP2021537801A JP7216828B2 JP 7216828 B2 JP7216828 B2 JP 7216828B2 JP 2021537801 A JP2021537801 A JP 2021537801A JP 2021537801 A JP2021537801 A JP 2021537801A JP 7216828 B2 JP7216828 B2 JP 7216828B2
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一志 ▲張▼
▲暁▼青 ▲楊▼
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シャンハイ マイクロ エレクトロニクス イクイプメント（グループ）カンパニー リミティド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
    • G01C21/005—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 with correlation of navigation data from several sources, e.g. map or contour matching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/22—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C1/00—Measuring angles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02—Investigating particle size or size distribution
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Dispersion Chemistry (AREA)
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  • Automation & Control Theory (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

本出願は、出願日２０１８年１２月２８日で、出願番号が２０１８１１６３００７９．０である中国特許出願の優先権を主張するものであり、該出願のすべての内容が引用により本出願に援用される。 This application claims priority from a Chinese patent application with filing date 2018/12/28 and application number 201811630079.0, the entire content of which is incorporated into this application by reference. .

本出願の実施例は、半導体リソグラフィの技術分野に関し、例えば、マスク姿勢監視方法、装置及びマスク粒度検出機器に関する。 TECHNICAL FIELD Embodiments of the present application relate to the technical field of semiconductor lithography, for example, mask pose monitoring methods, apparatus, and mask grain size detectors.

マスクは、挟持、搬送、貯蔵及び露光などの過程において汚染されてその表面に粒子、擦れ目、ピンホールなどの欠陥が生じる可能性がある。露光過程において、上記の欠陥の存在は、リソグラフィ機の画像性能および収率に直接に影響を及ぼし、厳しい場合、収率はゼロに下がる可能性がある。 Masks can become contaminated during processes such as clamping, shipping, storage, and exposure, resulting in defects such as particles, scratches, and pinholes on their surfaces. In the exposure process, the presence of the above defects directly affects the image performance and yield of the lithography machine, and in severe cases the yield can drop to zero.

マスク粒度検出システムは、リソグラフィ機マスク搬送サブシステムの主な部品の１つとして、マスク表面上の欠陥の大きさや位置を検出することができる。検出結果により、リソグラフィ機操作システムまたは操作者は、このマスクが後続の露光過程に使用されることができるかを判定することができる。検出結果はマスクの欠陥を除去する際の入力データとすることができる。 A mask grain size detection system, as one of the main components of a lithography machine mask transport subsystem, is capable of detecting the size and location of defects on the mask surface. The detection results allow a lithographic machine operating system or operator to determine if this mask can be used in subsequent exposure processes. The detection results can be used as input data when removing defects in the mask.

照明および撮像システムに制約され、マスクがスキャンテストを行う前に、マスクに対して焦点調節および水平姿勢（Ｘ軸回りの偏向ＲｘおよびＹ軸回りの偏向Ｒｙ）の検出を行うことが必要である。現在、特別設計のマスクを使用して、Ｒｘ／Ｒｙを測定し、特別設計のマスク上には特定構造の回折マークが設計され、レーザーが特定の角度に沿って入射すると、リニア（ｌｉｎｅａｒ）電荷結合素子（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖｉｃｅ、ＣＣＤ）は回折マークの散乱光の強度を受信でき、光スポットのリニアＣＣＤカメラでの位置及び偏向により、マスクのＲｘ／Ｒｙを測定する。しかし、この方法はマスク粒度を検出する前の調整にしか適用できないが、具体的な作業工程において、ロボットハンドは往復運動において偏向が発生する可能性があるため、常に水平状態を維持することができなく、これにより、マスクも偏向が発生し、粒度の検出結果の異常をもたらす。現在、Ｒｘ／Ｒｙをオンラインで直接に監視することが困難であり、コストが高く効率が低い。 Constrained by the illumination and imaging system, it is necessary to perform focus adjustment and detection of horizontal pose (deflection Rx about the X axis and Ry about the Y axis) for the mask before it undergoes a scan test. . Currently, a specially designed mask is used to measure Rx/Ry, on which diffraction marks with a specific structure are designed, and when the laser is incident along a specific angle, linear charge A Charge Coupled Device (CCD) can receive the scattered light intensity of the diffraction marks and measure the Rx/Ry of the mask by the linear CCD camera position and deflection of the light spot. However, this method can only be applied to the adjustment before detecting the mask grain size, but in the specific work process, the robot hand may be deflected in the reciprocating motion, so it is not possible to always maintain a horizontal state. This causes the mask to deflect as well, resulting in anomalous granularity detection results. Currently, direct on-line monitoring of Rx/Ry is difficult, costly and inefficient.

本出願は、マスク粒度の検出過程において、マスクの姿勢をオンラインで監視し、監視機器を簡略化し、監視の効率を向上させるマスク姿勢監視方法、装置及びマスク粒度検出機器を提供する。 The present application provides a mask attitude monitoring method, apparatus, and mask granularity detection equipment that monitor the attitude of the mask online, simplify the monitoring equipment, and improve the efficiency of monitoring during the mask granularity detection process.

第１方面において、本出願の実施例は、少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得することと、少なくとも１つの標定点から測定対象であるマスクの第１検出点までの第１方向に沿った距離、少なくとも１つの標定点から測定対象であるマスクの第２検出点までの第１方向に沿った距離、及び少なくとも１つの標定点から測定対象であるマスクの第３検出点までの第１方向に沿った距離をそれぞれ取得し、ここで、第１検出点と第２検出点の基準面内での投影が第２方向に沿って配列され、第１検出点と第３検出点の基準面内での投影が第３方向に沿って配列され、第１方向と、第２方向と、第３方向とはお互いに垂直であり、基準面が第１方向に垂直であることと、第１検出点から対応する標定点までの第１方向に沿った距離、第１検出点に対応する標定点から基準面までの第１方向に沿った距離、第２検出点から対応する標定点までの第１方向に沿った距離、第２検出点に対応する標定点から基準面までの第１方向に沿った距離及び第１検出点と第２検出点の第２方向に沿った距離により、基準面に対する測定対象であるマスクの第３方向回りの偏向角度を算出することと、第１検出点から対応する標定点までの第１方向に沿った距離、第１検出点に対応する標定点から基準面までの第１方向に沿った距離、第３検出点から対応する標定点までの第１方向に沿った距離、第３検出点に対応する標定点から基準面までの第１方向に沿った距離及び第１検出点と第３検出点の第３方向に沿った距離により、基準面に対する測定対象であるマスクの第２方向回りの偏向角度を算出することと、を含む、マスク姿勢監視方法を提供する。 In a first aspect, embodiments of the present application include obtaining a distance along a first direction from at least one control point to a reference plane; distance along the first direction to a point, distance along the first direction from at least one control point to a second detection point on the mask to be measured, and distance from the at least one control point to the mask to be measured Obtaining respective distances along a first direction to a third detection point, wherein the projections of the first detection point and the second detection point in the reference plane are arranged along a second direction to obtain a first detection point Projections of the point and the third detection point in the reference plane are arranged along a third direction, the first direction, the second direction and the third direction are perpendicular to each other, and the reference plane is the first direction the distance along the first direction from the first detection point to the corresponding control point, the distance along the first direction from the control point corresponding to the first detection point to the reference plane, the second The distance along the first direction from the detection point to the corresponding control point, the distance along the first direction from the control point corresponding to the second detection point to the reference plane, and the distance between the first detection point and the second detection point Calculating the deflection angle of the mask to be measured about the third direction with respect to the reference plane from the distances along the two directions; The distance along the first direction from the control point corresponding to the first detection point to the reference plane, the distance along the first direction from the third detection point to the corresponding control point, and the distance from the control point corresponding to the third detection point calculating the deflection angle of the mask to be measured about the second direction with respect to the reference plane from the distance along the first direction to the reference plane and the distance between the first detection point and the third detection point along the third direction; and a mask posture monitoring method.

第２方面において、本出願の実施例は、測定対象であるマスクの上方に設けられ、少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得し、及び、少なくとも１つの標定点から測定対象であるマスク上の第１検出点までの第１方向に沿った距離、少なくとも１つの標定点から測定対象であるマスク上の第２検出点までの第１方向に沿った距離、及び少なくとも１つの標定点から測定対象であるマスク上の第３検出点までの第１方向に沿った距離をそれぞれ取得し、ここで、第１方向と、第２方向と、第３方向とはお互いに垂直であり、基準面が第１方向に垂直であり、第１検出点と第２検出点の基準面内での投影が第２方向に沿って配列され、第１検出点と第３検出点の基準面内での投影が第３方向に沿って配列される、ように構成される少なくとも１つの距離センサと、測定対象であるマスクを第２方向及び／又は第３方向に沿って移動するように駆動するように構成される移動機構と、第１検出点から対応する標定点までの第１方向に沿った距離、第１検出点に対応する標定点から基準面までの第１方向に沿った距離、第２検出点から対応する標定点までの第１方向に沿った距離、第２検出点に対応する標定点から基準面までの第１方向に沿った距離及び第１検出点と第２検出点の第２方向に沿った距離により、基準面に対する測定対象であるマスクの第３方向回りの偏向角度を算出し、及び、第１検出点から対応する標定点までの第１方向に沿った距離、第１検出点に対応する標定点から基準面までの第１方向に沿った距離、第３検出点から対応する標定点までの第１方向に沿った距離、第３検出点に対応する標定点から基準面までの第１方向に沿った距離及び第１検出点と第３検出点の第３方向に沿った距離により、基準面に対する測定対象であるマスクの第２方向回りの偏向角度を算出するように構成される制御算出ユニットと、を含む、マスク姿勢監視装置をさらに提供する。 In a second aspect, embodiments of the present application are provided above a mask to be measured, acquire a distance along a first direction from at least one control point to a reference plane, and obtain at least one control point. A distance along the first direction from a fixed point to a first detection point on the mask to be measured, a distance along the first direction from at least one control point to a second detection point on the mask to be measured, and a distance along a first direction from at least one control point to a third detection point on the mask to be measured, where the first direction, the second direction, and the third direction are are perpendicular to each other, the reference plane is perpendicular to the first direction, projections of the first detection point and the second detection point on the reference plane are arranged along the second direction, and the first detection point and the third detection point are arranged along the second direction; at least one distance sensor configured such that the projection of the detection point in the reference plane is arranged along a third direction; a moving mechanism configured to be driven to move; a distance along a first direction from a first detection point to a corresponding control point; distance along the direction, distance along the first direction from the second detection point to the corresponding control point, distance along the first direction from the control point corresponding to the second detection point to the reference plane, and the first detection Based on the distance along the second direction between the point and the second detection point, the deflection angle of the mask to be measured relative to the reference plane is calculated, and the distance from the first detection point to the corresponding control point is calculated. distance along the first direction, distance along the first direction from the control point corresponding to the first detection point to the reference plane, distance along the first direction from the third detection point to the corresponding control point, third The distance along the first direction from the control point corresponding to the detection point to the reference plane and the distance along the third direction between the first detection point and the third detection point determine the second distance of the mask to be measured with respect to the reference plane. a control calculation unit configured to calculate an about-direction deflection angle.

第３方面において、本出願の実施例は、本出願の第２方面のいずれかに記載のマスク姿勢監視装置を含む、マスク粒度検出機器をさらに提供する。 In a third aspect, embodiments of the present application further provide mask granularity detection equipment, including a mask attitude monitor according to any of the second aspects of the present application.

本出願の実施例が提供するマスク姿勢監視方法である。1 is a mask posture monitoring method provided by an embodiment of the present application; 本出願の実施例に係る測定対象であるマスクの偏向角度を算出する原理図である。FIG. 4 is a principle diagram for calculating a deflection angle of a mask to be measured according to an embodiment of the present application; 本出願の実施例に係る測定対象であるマスクの各検出点の分布模式図である。FIG. 3 is a schematic diagram of the distribution of each detection point on a mask that is a measurement target according to an example of the present application; 本出願の実施例に係る測定対象であるマスクの偏向角度を算出する他の原理図である。FIG. 5 is another principle diagram for calculating the deflection angle of the mask to be measured according to the embodiment of the present application; 本出願の実施例が提供するマスク姿勢監視装置の第３方向に沿った模式図である。FIG. 4 is a schematic view along a third direction of the mask posture monitoring device provided by an embodiment of the present application; 図５におけるマスク姿勢監視装置の第２方向に沿った模式図である。FIG. 6 is a schematic diagram along a second direction of the mask posture monitoring device in FIG. 5 ; 本出願の実施例が提供するマスク姿勢監視装置の第３方向に沿った模式図である。FIG. 4 is a schematic view along a third direction of the mask posture monitoring device provided by an embodiment of the present application; 本出願の実施例が提供するマスク粒度検出機器の検出原理図である。1 is a detection principle diagram of a mask particle size detection device provided by an embodiment of the present application; FIG.

以下、本出願の実施例の技術方案について図面を参照しながらさらに詳しく説明する。明らかに、説明される実施例は、全ての実施例ではなく、本出願の一部の実施例に過ぎない。本出願における実施例に基づいて、当業者が創造的な労働がなされていない前提として取得した他のすべての実施例は、本出願の保護範囲に属する。 Hereinafter, the technical solutions of the embodiments of the present application will be described in more detail with reference to the drawings. Apparently, the described embodiments are only some embodiments of the present application rather than all embodiments. Based on the examples in the present application, all other examples obtained by persons skilled in the art on the premise that no creative work has been done shall fall within the protection scope of the present application.

本出願の説明において、特に明確な規定と限定がない限り、用語「接する」、「接続」、「固定」は広義の理解をすべきであり、例えば、固定接続であってもよいし、取り外し可能な接続であってもよいし、又は一体になってもよく、機械的な接続であってもよいし、電気的な接続であってもよく、直接的に接してもよいし、中間媒体により間接的に接してもよいし、２つの素子の内部の連通又は２つの素子のお互いの作用関係であってもよい。当業者は、具体的な状況に応じて上記用語の本出願における具体的な意味を理解することができる。 In the description of the present application, the terms “contact”, “connection”, and “fixation” should be understood in a broad sense unless otherwise clearly defined and limited. It may be a possible connection, may be integrated, may be a mechanical connection, may be an electrical connection, may be in direct contact, or may be an intermediate medium. may be indirect contact with each other, or may be internal communication between the two elements, or an operational relationship between the two elements. A person skilled in the art can understand the specific meaning of the above terms in this application according to the specific situation.

本出願において、特に明確な規定と限定がない限り、第１特徴が第２特徴の「上」又はその「下」にあることは、第１特徴と第２特徴が直接に接触することを含んでもよく、第１特徴と第２特徴が直接に接触することではなく、それらの間の他の特徴を介して接触することも含んでもよい。さらに、第１特徴が第２特徴の「上」、「上方」及び「上面」にあることは、第１特徴が第２特徴の直上及び斜め上方にあることを含み、又は単に第１特徴の水平高さが第２特徴より高いことを表すことである。第１特徴が第２特徴の「下」、「下方」及び「下面」にあることは、第１特徴が第２特徴の直下及び斜め下方にあることを含み、又は単に第１特徴の水平高さが第２特徴より小さいことを表すことである。 In this application, unless otherwise expressly specified and limited, reference to a first feature being "above" or "below" a second feature includes direct contact between the first and second features. It may also involve not directly contacting the first feature and the second feature, but contacting through another feature therebetween. Further, references to a first feature being "above," "above," and "above" a second feature include that the first feature is directly above and diagonally above the second feature, or simply above the first feature. to indicate that the horizontal height is higher than the second feature. References to a first feature being "below", "below" and "below" a second feature include that the first feature is directly below and diagonally below the second feature, or simply the horizontal height of the first feature. is less than the second feature.

本出願の実施例は、マスク姿勢監視方法を提供し、図１は、本出願の実施例が提供するマスク姿勢監視方法であり、図１に示すように、該マスク姿勢監視方法は、ステップＳ１１～ステップＳ１３を含む。 An embodiment of the present application provides a mask posture monitoring method, FIG. 1 is a mask posture monitoring method provided by an embodiment of the present application, as shown in FIG. 1, the mask posture monitoring method includes step S11 to step S13.

ステップＳ１１において、少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得する。 In step S11, the distance along the first direction from at least one control point to the reference plane is obtained.

ここで、基準面が第１方向Ｚに垂直な平面である。例示的に、少なくとも１つの標定点が３つの標定点であってもよく、３つの標定点から基準面までの第１方向に沿った距離を取得する。なお、３つの標定点が位置する平面は基準面と平行であってもよく、この場合、そのうちの１つの標定点から基準面までの第１方向に沿った距離を取得すればよい。 Here, the reference plane is a plane perpendicular to the first direction Z. As shown in FIG. Exemplarily, the at least one control point may be three control points, and the distances along the first direction from the three control points to the reference plane are obtained. The plane on which the three control points are located may be parallel to the reference plane. In this case, the distance along the first direction from one of the control points to the reference plane may be obtained.

ステップＳ１２において、少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向に沿った距離を取得する。 In step S12, distances along the first direction from at least one control point to the first detection point, the second detection point, and the third detection point on the mask to be measured are obtained.

ここで、第１検出点、第２検出点及び第３検出点が測定対象であるマスク上に位置し、３つの標定点と一対一に対応し、第１検出点と第２検出点の基準面内での投影が第２方向Ｘに沿って配列され、第１検出点と第３検出点の基準面内での投影が第３方向Ｙに沿って配列され、第１方向と、第２方向と、第３方向とはお互いに垂直である。少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向に沿った距離を取得することは、各検出点から対応する標定点までの第１方向に沿った距離を取得することを含む。 Here, the first detection point, the second detection point, and the third detection point are positioned on the mask to be measured, correspond to the three control points one-to-one, and are the reference points for the first detection point and the second detection point. In-plane projections are arranged along a second direction X, in-plane projections of the first detection point and the third detection point are arranged along a third direction Y, and the first direction and the second The direction and the third direction are perpendicular to each other. Acquiring the distance along the first direction from at least one control point to the first detection point, the second detection point and the third detection point on the mask to be measured is obtained by obtaining the distance from each detection point to the corresponding control point. obtaining a distance along a first direction to .

ステップＳ１３において、取得されたデータにより、基準面に対する測定対象であるマスクの第２方向回りの偏向角度及び第３方向回りの偏向角度を算出する。 In step S13, the acquired data are used to calculate the deflection angles of the mask to be measured about the second direction and about the third direction with respect to the reference plane.

図２は、本出願の実施例に係る測定対象であるマスクの偏向角度を算出する原理図であり、図３は、本出願の実施例に係る測定対象であるマスク上の各検出点の分布模式図である。なお、各検出点は、測定対象であるマスク上に固定された点ではなく、検出のニーズに応じて配置されるものであり、第１検出点と第２検出点の基準面内での投影が第２方向Ｘに沿って配列され、第１検出点と第３検出点の基準面内での投影が第３方向Ｙに沿って配列されることを満たせばよい。基準面に対する測定対象であるマスクの第３方向回りの偏向角度を算出することを例として、図２に示すように、一実施例において、第１検出点ａ１から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’、第１検出点ａ１に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ１、第２検出点ａ２から対応する標定点までの第１方向Ｚに沿った距離Ｈ２’、第２検出点ａ２に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ２、及び第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ１により、基準面Ａに対する測定対象であるマスク２００の第３方向Ｙ回りの偏向角度θ１を算出する。ここで、第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ１は、対応する２つの標定点の第２方向Ｘに沿った距離である。一実施例において、計算式は以下の通りである。

Figure 0007216828000001
FIG. 2 is a principle diagram for calculating the deflection angle of the mask to be measured according to the embodiment of the present application, and FIG. 3 is a distribution of each detection point on the mask to be measured according to the embodiment of the present application. It is a schematic diagram. Each detection point is not a fixed point on the mask to be measured, but is arranged according to the needs of detection. are arranged along the second direction X, and projections of the first detection point and the third detection point within the reference plane are arranged along the third direction Y. Taking the calculation of the deflection angle about the third direction of the mask to be measured with respect to the reference plane as an example, as shown in FIG. A distance H1′ along the direction Z, a distance H1 along the first direction Z from the control point corresponding to the first detection point a1 to the reference plane A, and a first direction from the second detection point a2 to the corresponding control point. A distance H2' along Z, a distance H2 along the first direction Z from the control point corresponding to the second detection point a2 to the reference plane A, and a second direction between the first detection point a1 and the second detection point a2. Based on the distance L1 along X, the deflection angle θ1 about the third direction Y of the mask 200 to be measured with respect to the reference plane A is calculated. Here, the distance L1 along the second direction X between the first detection point a1 and the second detection point a2 is the distance along the second direction X between the corresponding two control points. In one embodiment, the calculation formula is as follows.
Figure 0007216828000001

基準面Ａに対する測定対象であるマスク２００の第２方向Ｘ回りの偏向角度の算出原理は、測定対象であるマスク２００の第３方向Ｙ回りの偏向角度の算出原理と類似し、一実施例において、第１検出点ａ１から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’、第１検出点ａ１に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ１、第３検出点ａ３から対応する標定点までの第１方向Ｚに沿った距離Ｈ３’、第３検出点ａ３に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ３、及び第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２により、基準面Ａに対する測定対象であるマスク２００の第２方向Ｘ回りの偏向角度θ２を算出する。ここで、第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２は、対応する２つの標定点の第３方向Ｙに沿った距離である。一実施例において、計算式は以下の通りである。

Figure 0007216828000002
The principle of calculating the deflection angle of the mask 200 to be measured about the second direction X with respect to the reference plane A is similar to the principle of calculating the deflection angle of the mask 200 to be measured about the third direction Y. , a distance H1′ along the first direction Z from the first detection point a1 to the corresponding control point, a distance H1 along the first direction Z from the control point corresponding to the first detection point a1 to the reference plane A, A distance H3′ along the first direction Z from the third detection point a3 to the corresponding control point, a distance H3 along the first direction Z from the control point corresponding to the third detection point a3 to the reference plane A, and Based on the distance L2 along the third direction Y between the first detection point a1 and the third detection point a3, the deflection angle θ2 about the second direction X of the mask 200 to be measured with respect to the reference plane A is calculated. Here, the distance L2 along the third direction Y between the first detection point a1 and the third detection point a3 is the distance along the third direction Y between the corresponding two control points. In one embodiment, the calculation formula is as follows.
Figure 0007216828000002

本出願の実施例は、少なくとも１つの標定点から基準面までの第１方向に沿った距離、及び少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向に沿った距離を取得し、取得されたデータから、測定対象であるマスクの第２方向回りの偏向角度及び第３方向回りの偏向角度を算出することにより、測定対象であるマスクの偏向角度をオンラインで監視することが実現でき、監視の過程が簡単で、監視の効率が高く、且つ特別設計のマスク及びリニアＣＣＤカメラが必要ではなくて監視のコストが低い。 The embodiments of the present application measure the distance along the first direction from at least one control point to the reference plane, and the distance from the at least one control point to the first detection point, the second detection point, and the second detection point on the mask to be measured. The distance along the first direction to the three detection points is obtained, and from the obtained data, the deflection angle of the mask to be measured about the second direction and the deflection angle about the third direction are calculated. The deflection angle of the target mask can be monitored online, the monitoring process is simple, the monitoring efficiency is high, and the cost of monitoring is low because a specially designed mask and linear CCD camera are not required.

一実施例において、少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得する前に、標定マスクをレベリングすることにより、標定マスクが第１方向に垂直で、標定マスクの表面が基準面であるようにすることをさらに含む。 In one embodiment, before obtaining the distance along the first direction from the at least one orientation point to the reference plane, the orientation mask is leveled so that the orientation mask is perpendicular to the first direction and the surface of the orientation mask is the reference plane.

一実施例において、オフラインの状態で、標定マスクをレベリングする。標定マスクは、測定対象であるマスク２００と同じパラメータ及び設計を有するマスクであってもよく、標定マスクが第１方向Ｚに垂直にして、標定マスクの上面及び下面が基準面とすることができ、標定マスクが特別に設計される必要がない。 In one embodiment, the orientation mask is leveled off-line. The orientation mask may be a mask having the same parameters and design as the mask 200 to be measured, and the orientation mask may be perpendicular to the first direction Z, and the upper and lower surfaces of the orientation mask may be the reference planes. , the orientation mask does not need to be specially designed.

一実施例において、図２を参照し続け、本出願の他の実施例において、少なくとも１つの標定点が２つの標定点であってもよく、それぞれに第１標定点及び第２標定点であり、第１標定点及び第２標定点が第２方向Ｘに沿って配列され、少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向に沿った距離を取得することは、第１標定点から第１検出点ａ１までの第１方向Ｚに沿った距離Ｈ１’、及び第２標定点から第２検出点ａ２までの第１方向Ｚに沿った距離Ｈ２’を取得することと、第３方向Ｙに沿って測定対象であるマスク２００を移動し、第１標定点から第３検出点ａ３までの第１方向Ｚに沿った距離を取得し、該距離を第３検出点ａ３から対応する標定点までの第１方向Ｚに沿った距離Ｈ３’とし、ここで、測定対象であるマスク２００の第３方向Ｙに沿って移動する距離は、第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２であることと、を含む。 In one embodiment, continuing to refer to FIG. 2, in another embodiment of the present application, the at least one control point may be two control points, respectively a first control point and a second control point. , the first control point and the second control point are arranged along the second direction X, and from the at least one control point to the first detection point, the second detection point and the third detection point on the mask to be measured Acquiring the distance along the first direction includes the distance H1′ along the first direction Z from the first control point to the first detection point a1, and the distance H1′ along the first direction Z from the second control point to the second detection point a2. Obtaining a distance H2′ along one direction Z, moving the mask 200 to be measured along the third direction Y, and measuring along the first direction Z from the first control point to the third detection point a3 is obtained, and this distance is defined as a distance H3′ along the first direction Z from the third detection point a3 to the corresponding control point, and here, along the third direction Y of the mask 200 to be measured, The moving distance is a distance L2 along the third direction Y between the first detection point a1 and the third detection point a3.

本出願の実施例は、標定点の数を減少し、監視装置の構造を簡略化することができ、関連技術におけるマスク移動機構を用いて測定対象であるマスクを移動することができて、監視のコストを下げる。 The embodiments of the present application can reduce the number of control points, simplify the structure of the monitoring device, and use the mask moving mechanism in the related art to move the mask to be measured, so that the monitoring reduce the cost of

一実施例において、図２に示すように、第１標定点及び第２標定点が測定対象であるマスク２００の同側に位置する。図４は本出願の実施例に係る他の測定対象であるマスクの偏向角度を算出する原理図であり、図４に示すように、第１標定点及び第２標定点が測定対象であるマスク２００の異側に位置してもよい。 In one embodiment, as shown in FIG. 2, the first control point and the second control point are located on the same side of the mask 200 to be measured. FIG. 4 is a principle diagram for calculating the deflection angle of a mask that is another measurement target according to an embodiment of the present application. As shown in FIG. 200 may be located on different sides.

本出願の他の実施例において、少なくとも１つの標定点が２つの標定点であってもよく、それぞれに第３標定点及び第４標定点であり、第３標定点及び第４標定点が第３方向Ｙに沿って配列され、少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向Ｚに沿った距離を取得することは、第３標定点から第１検出点ａ１までの第１方向Ｚに沿った距離を取得し、該距離を第１検出点ａ１から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’とし、及び第４標定点から第３検出点ａ３までの第１方向に沿った距離を取得し、該距離を第３検出点ａ３から対応する標定点までの第１方向Ｚに沿った距離Ｈ３’とすることと、第２方向Ｘに沿って測定対象であるマスク２００を移動し、第３標定点から第２検出点ａ２までの第１方向Ｚに沿った距離を取得し、該距離を第２検出点ａ２から対応する標定点までの第１方向Ｚに沿った距離Ｈ２’とし、ここで、測定対象であるマスク２００の第２方向Ｘに沿って移動する距離は第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ１であることとを含む。 In another embodiment of the present application, the at least one control point may be two control points, respectively a third control point and a fourth control point, wherein the third control point and the fourth control point are the third control point. Obtaining distances along the first direction Z from at least one control point arranged along the three directions Y to the first detection point, the second detection point, and the third detection point on the mask to be measured. acquires the distance along the first direction Z from the third control point to the first detection point a1, and calculates the distance along the first direction Z from the first detection point a1 to the corresponding control point H1 ', and the distance along the first direction from the fourth control point to the third detection point a3 is obtained, and the distance along the first direction Z from the third detection point a3 to the corresponding control point is obtained. H3′, the mask 200 to be measured is moved along the second direction X, the distance along the first direction Z from the third control point to the second detection point a2 is obtained, and the distance is the distance H2′ along the first direction Z from the second detection point a2 to the corresponding control point, where the distance the mask 200 to be measured moves along the second direction X is the first detection point L1 along the second direction X between a1 and the second detection point a2.

一実施例において、第３標定点及び第４標定点が測定対象であるマスクの同側又は異側に位置する。 In one embodiment, the third control point and the fourth control point are located on the same side or different side of the mask to be measured.

本出願の他の実施例において、標定点が第５標定点を含み、少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向Ｚに沿った距離を取得することは、第２方向Ｘ及び／又は第３方向Ｙに沿って測定対象であるマスク２００を移動し、第５標定点から第１検出点ａ１までの第１方向Ｚに沿った距離、第５標定点から第２検出点ａ２までの第１方向Ｚに沿った距離、及び第５標定点から第３検出点ａ３までの第１方向Ｚに沿った距離を取得し、それぞれに各検出点から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’、Ｈ２’及びＨ３’とし、ここで、測定対象であるマスク２００の第２方向Ｘに沿って移動する距離は第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離であり、測定対象であるマスク２００の第３方向Ｙに沿って移動する距離は第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離であることを含む。 In another embodiment of the present application, the control points include a fifth control point, and a first detection point from the at least one control point to the first detection point, the second detection point and the third detection point on the mask to be measured. Obtaining the distance along the direction Z involves moving the mask 200 to be measured along the second direction X and/or the third direction Y and measuring the first distance from the fifth control point to the first detection point a1. The distance along the direction Z, the distance along the first direction Z from the fifth control point to the second detection point a2, and the distance along the first direction Z from the fifth control point to the third detection point a3 are and set distances H1′, H2′, and H3′ along the first direction Z from each detection point to the corresponding control point, respectively, where along the second direction X of the mask 200 to be measured, The moving distance is the distance along the second direction X between the first detection point a1 and the second detection point a2, and the moving distance along the third direction Y of the mask 200 to be measured is the first detection point a1. and the distance along the third direction Y of the third detection point a3.

本出願の実施例は、標定点の数をさらに減少し、１つの標定点を採用すれば監視過程を完成でき、監視装置の構造を簡略化し、関連技術におけるマスク移動機構を用いて測定対象であるマスクを移動することができて、監視コストを下げる。 The embodiment of the present application further reduces the number of control points, adopts one control point to complete the monitoring process, simplifies the structure of the monitoring device, and uses the mask moving mechanism in the related art to measure the object. Some masks can be moved, lowering surveillance costs.

本出願の実施例はマスク姿勢監視装置をさらに提供し、図５は本出願の実施例が提供するマスク姿勢監視装置の第３方向に沿った模式図であり、図６は図５におけるマスク姿勢監視装置の第２方向に沿った模式図であり、図５及び図６に示すように、マスク姿勢監視装置は、測定対象であるマスク２００の上方に設けられ、取付枠３００上に固定される少なくとも１つの距離センサ１０１を含み、例示的に、少なくとも１つの距離センサは３つの距離センサ１０１であってもよく、３つの標定点から基準面Ａまでの第１方向Ｚに沿った距離を取得し、及び、測定対象であるマスク２００上の第１検出点ａ１、第２検出点ａ２及び第３検出点ａ３から対応する標定点までの第１方向Ｚに沿った距離を取得するように構成され、ここで、第１方向Ｚと、第２方向Ｘと、第３方向Ｙとはお互いに垂直であり、基準面Ａは第１方向Ｚに垂直であり、第１検出点ａ１と第２検出点ａ２の基準面Ａ内での投影が第２方向Ｘに沿って配列され、第１検出点ａ１と第３検出点ａ３の基準面Ａ内での投影が第３方向Ｙに沿って配列され、距離センサは検出点と一対一に対応して設けられる。ここで、基準面Ａは、オフラインの状態で、標定マスクをレベリングした後、標定マスクの上面及び下面であり、標定マスクは測定対象であるマスク２００と同じパラメータ及び設計を有するマスクであってもよく、標定マスクをレベリングすることにより、標定マスクは第１方向Ｚに垂直であるようにする。 An embodiment of the present application further provides a mask posture monitoring device, FIG. 5 is a schematic view along a third direction of the mask posture monitoring device provided by an embodiment of the present application, and FIG. 6 is the mask posture in FIG. It is a schematic view of the monitoring device along the second direction, and as shown in FIGS. 5 and 6, the mask posture monitoring device is provided above the mask 200 to be measured and fixed on the mounting frame 300. including at least one distance sensor 101, illustratively the at least one distance sensor may be three distance sensors 101, for obtaining the distance along the first direction Z from the three control points to the reference plane A; and the distance along the first direction Z from the first detection point a1, the second detection point a2, and the third detection point a3 on the mask 200 to be measured to the corresponding control point. where the first direction Z, the second direction X, and the third direction Y are perpendicular to each other, the reference plane A is perpendicular to the first direction Z, and the first detection point a1 and the second detection point a1 are perpendicular to each other. The projection of the detection point a2 on the reference plane A is arranged along the second direction X, and the projection of the first detection point a1 and the third detection point a3 onto the reference plane A is arranged along the third direction Y. The distance sensors are provided in one-to-one correspondence with the detection points. Here, the reference plane A is the upper and lower surfaces of the orientation mask after leveling the orientation mask in the off-line state, even if the orientation mask has the same parameters and design as the mask 200 to be measured. Often, the orientation mask is made perpendicular to the first direction Z by leveling the orientation mask.

移動機構４００は、測定対象であるマスク２００を第２方向Ｘ及び／又は第３方向Ｙに沿って移動するように駆動するように構成される。移動機構４００はロボットハンドであってもよく、ロボットハンドの自由端にはマスクフォーク（中国語：版叉）が設けられ、測定対象であるマスク２００を載置するように構成される。 The moving mechanism 400 is configured to drive the mask 200 to be measured so as to move along the second direction X and/or the third direction Y. As shown in FIG. The moving mechanism 400 may be a robot hand, and a mask fork (Chinese: plate fork) is provided at the free end of the robot hand, and configured to place the mask 200 to be measured.

制御算出ユニット（図示しない）は、距離センサ１０１が取得したデータにより、基準面Ａに対する測定対象であるマスク２００の第２方向Ｘ回りの偏向角度及び第３方向Ｙ回りの偏向角度を算出するように構成される。 A control calculation unit (not shown) calculates the deflection angle about the second direction X and the deflection angle about the third direction Y of the mask 200 to be measured with respect to the reference plane A, based on the data acquired by the distance sensor 101. configured to

一実施例において、第１検出点ａ１から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’、第１検出点ａ１に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ１、第２検出点ａ２から対応する標定点までの第１方向Ｚに沿った距離Ｈ２’、第２検出点ａ２に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ２及び第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ１により、基準面Ａに対する測定対象であるマスク２００の第３方向Ｙ回りの偏向角度θ１を算出する。ここで、第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ１は、対応する２つの距離センサ１０１の第２方向Ｘに沿った距離である。一実施例において、計算式は以下の通りである。

Figure 0007216828000003
In one embodiment, the distance H1′ along the first direction Z from the first detection point a1 to the corresponding control point, and the distance H1′ along the first direction Z from the control point corresponding to the first detection point a1 to the reference plane A distance H1 along the first direction Z from the second detection point a2 to the corresponding control point, distance H2′ along the first direction Z from the control point corresponding to the second detection point a2 to the reference plane A Based on the distance H2 and the distance L1 along the second direction X between the first detection point a1 and the second detection point a2, the deflection angle θ1 about the third direction Y of the mask 200 to be measured with respect to the reference plane A is calculated. Here, the distance L1 along the second direction X between the first detection point a1 and the second detection point a2 is the distance along the second direction X between the corresponding two distance sensors 101 . In one embodiment, the calculation formula is as follows.
Figure 0007216828000003

基準面Ａに対する測定対象であるマスク２００の第２方向Ｘ回りの偏向角度の算出原理は、測定対象であるマスク２００の第３方向Ｙ回りの偏向角度の算出原理と類似し、一実施例において、第１検出点ａ１から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’、第１検出点ａ１に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ１、第３検出点ａ３から対応する標定点までの第１方向Ｚに沿った距離Ｈ３’、第３検出点ａ３に対応する標定点から基準面Ａまでの第１方向Ｚに沿った距離Ｈ３、及び第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２により、基準面Ａに対する測定対象であるマスク２００の第２方向Ｘ回りの偏向角度θ２を算出する。ここで、第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２は、対応する２つの距離センサ１０１の第３方向Ｙに沿った距離である。一実施例において、計算式は以下の通りである。

Figure 0007216828000004
The principle of calculating the deflection angle of the mask 200 to be measured about the second direction X with respect to the reference plane A is similar to the principle of calculating the deflection angle of the mask 200 to be measured about the third direction Y. , a distance H1′ along the first direction Z from the first detection point a1 to the corresponding control point, a distance H1 along the first direction Z from the control point corresponding to the first detection point a1 to the reference plane A, A distance H3′ along the first direction Z from the third detection point a3 to the corresponding control point, a distance H3 along the first direction Z from the control point corresponding to the third detection point a3 to the reference plane A, and Based on the distance L2 along the third direction Y between the first detection point a1 and the third detection point a3, the deflection angle θ2 about the second direction X of the mask 200 to be measured with respect to the reference plane A is calculated. Here, the distance L2 along the third direction Y between the first detection point a1 and the third detection point a3 is the distance along the third direction Y between the corresponding two distance sensors 101 . In one embodiment, the calculation formula is as follows.
Figure 0007216828000004

本出願の実施例は、少なくとも１つの距離センサが少なくとも１つの標定点から基準面までの第１方向に沿った距離、及び少なくとも１つの標定点から測定対象であるマスク上の第１検出点、第２検出点及び第３検出点までの第１方向に沿った距離を取得し、制御算出ユニットは、取得されたデータにより、測定対象であるマスクの第２方向回りの偏向角度及び第３方向回りの偏向角度を算出することにより、測定対象であるマスクの偏向角度をオンラインで監視することが実現でき、監視の過程が簡単で、監視の効率が高く、且つ特別設計のマスク及びリニアＣＣＤカメラが必要ではなくて監視のコストが低い。 Embodiments of the present application measure the distance along a first direction from at least one control point to a reference plane by at least one distance sensor, and a first detection point on a mask to be measured from the at least one control point Obtaining the distances along the first direction to the second detection point and the third detection point, the control calculation unit calculates the deflection angle of the mask to be measured about the second direction and the third direction according to the obtained data. By calculating the deflection angle of the circumference, the deflection angle of the mask to be measured can be monitored online, the monitoring process is simple, the monitoring efficiency is high, and the specially designed mask and linear CCD camera are used. is not required and the cost of monitoring is low.

本出願の他の実施例において、図５を参照し、マスク姿勢監視装置は、第２方向Ｘに沿って配列され、それぞれに第１標定点及び第２標定点に対応する２つの距離センサ１０１を含む。２つの距離センサ１０１は、まず、第１標定点から第１検出点ａ１までの第１方向Ｚに沿った距離Ｈ１’、及び第２標定点から第２検出点ａ２までの第１方向Ｚに沿った距離Ｈ２’を取得する。そして、制御算出ユニットは、移動機構４００が測定対象であるマスク２００を連れて第３方向Ｙに沿って移動するように制御され、対応する距離センサ１０１は、第１標定点から第３検出点ａ３までの第１方向Ｚに沿った距離を取得し、該距離を第３検出点ａ３から対応する標定点までの第１方向Ｚに沿った距離Ｈ３’とし、ここで、測定対象であるマスク２００の第３方向Ｙに沿って移動する距離は、第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２である。 In another embodiment of the present application, referring to FIG. 5, the mask attitude monitor has two range sensors 101 arranged along the second direction X and corresponding to the first control point and the second control point, respectively. including. The two distance sensors 101 first detect a distance H1′ along the first direction Z from the first control point to the first detection point a1, and a distance H1′ along the first direction Z from the second control point to the second detection point a2. Get the distance H2' along. The control calculation unit controls the movement mechanism 400 to move along the third direction Y with the mask 200 to be measured, and the corresponding distance sensor 101 moves from the first control point to the third detection point. A distance along the first direction Z to a3 is obtained, and this distance is defined as a distance H3' along the first direction Z from the third detection point a3 to the corresponding control point, where the mask to be measured is The distance that 200 moves along the third direction Y is the distance L2 along the third direction Y between the first detection point a1 and the third detection point a3.

図６を参照し、本出願の他の実施例において、マスク姿勢監視装置は、第３方向Ｙに沿って配列され、それぞれに第３標定点及び第４標定点に対応する２つの距離センサ１０１を含む。２つの距離センサ１０１は、まず、第３標定点から第１検出点ａ１までの第１方向Ｚに沿った距離Ｈ１’、及び第４標定点から第３検出点ａ３までの第１方向Ｚに沿った距離Ｈ３’を取得する。そして、制御算出ユニットは、移動機構が測定対象であるマスク２００を連れて第２方向Ｘに沿って移動するように制御され、対応する距離センサ１０１は、第３標定点から第２検出点ａ２までの第１方向Ｚに沿った距離を取得し、該距離を第２検出点ａ２から対応する標定点までの第１方向Ｚに沿った距離Ｈ２’とし、ここで、測定対象であるマスク２００の第２方向Ｘに沿って移動する距離は、第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ２である。 Referring to FIG. 6, in another embodiment of the present application, the mask attitude monitor has two range sensors 101 arranged along the third direction Y and corresponding to the third control point and the fourth control point, respectively. including. The two distance sensors 101 first detect a distance H1′ along the first direction Z from the third control point to the first detection point a1, and a distance H1′ along the first direction Z from the fourth control point to the third detection point a3. Get the distance H3' along. Then, the control calculation unit is controlled so that the moving mechanism moves along the second direction X with the mask 200 to be measured, and the corresponding distance sensor 101 moves from the third control point to the second detection point a2. is obtained as a distance H2′ along the first direction Z from the second detection point a2 to the corresponding control point, where the mask 200 to be measured is obtained. is the distance L2 along the second direction X between the first detection point a1 and the second detection point a2.

図７は本出願の実施例が提供するマスク姿勢監視装置の第３方向に沿った模式図であり、一実施例において、図５、６又は７を参照し、２つの距離センサ１０１は測定対象であるマスク２００の同側又は異側に位置する。 FIG. 7 is a schematic diagram along the third direction of the mask posture monitoring device provided by the embodiments of the present application. In one embodiment, please refer to FIG. is located on the ipsilateral or heterolateral side of the mask 200 where .

本出願の実施例は、距離センサの数を減少し、監視装置の構造を簡略化することができ、関連技術におけるマスク移動機構を用いて測定対象であるマスクを移動することができて、監視のコストを下げる。 The embodiments of the present application can reduce the number of distance sensors, simplify the structure of the monitoring device, and use the mask moving mechanism in the related art to move the mask to be measured, so that the monitoring reduce the cost of

本出願の他の実施例において、マスク姿勢監視装置は第５標定点に対応する１つの距離センサ１０１を含む。一実施例において、移動機構４００は第２方向Ｘ及び／又は第３方向Ｙに沿って測定対象であるマスク２００を移動し、距離センサ１０１は第５標定点から第１検出点ａ１までの第１方向Ｚに沿った距離、第５標定点から第２検出点ａ２までの第１方向Ｚに沿った距離、及び第５標定点から第３検出点ａ３までの第１方向Ｚに沿った距離を取得し、それぞれに各検出点から対応する標定点までの第１方向Ｚに沿った距離Ｈ１’、Ｈ２’及びＨ３’とし、ここで、測定対象であるマスク２００の第２方向Ｘに沿って移動する距離は、第１検出点ａ１と第２検出点ａ２の第２方向Ｘに沿った距離Ｌ１であり、測定対象であるマスク２００の第３方向Ｙに沿って移動する距離は、第１検出点ａ１と第３検出点ａ３の第３方向Ｙに沿った距離Ｌ２である。 In another embodiment of the present application, the mask attitude monitor includes one range sensor 101 corresponding to the fifth control point. In one embodiment, the moving mechanism 400 moves the mask 200 to be measured along the second direction X and/or the third direction Y, and the distance sensor 101 moves from the fifth control point to the first detection point a1. Distance along the first direction Z, distance along the first direction Z from the fifth control point to the second detection point a2, and distance along the first direction Z from the fifth control point to the third detection point a3 are respectively defined as distances H1′, H2′, and H3′ from each detection point to the corresponding control point along the first direction Z, where along the second direction X of the mask 200 to be measured, is the distance L1 along the second direction X between the first detection point a1 and the second detection point a2, and the distance the mask 200 to be measured is moved along the third direction Y is A distance L2 along the third direction Y between the first detection point a1 and the third detection point a3.

本出願の実施例は、距離センサの数をさらに減少し、１つの距離センサを採用して監視過程を完成でき、監視装置の構造を簡略化し、関連技術におけるマスク移動機構を用いて測定対象であるマスクを移動することができて、監視のコストを下げる。 The embodiment of the present application further reduces the number of distance sensors, adopts one distance sensor to complete the monitoring process, simplifies the structure of the monitoring device, and uses the mask moving mechanism in the related art to measure the object. Some masks can be moved, lowering the cost of surveillance.

本出願の実施例は、本出願のいずれかの上記した実施例に記載のマスク姿勢監視装置を含む、マスク粒度検出機器をさらに提供する。 Embodiments of the present application further provide a mask granularity detection apparatus including a mask pose monitor as described in any of the above embodiments of the present application.

マスク粒度検出機器は、リソグラフィ機マスク搬送サブシステムの主な部材の１つとして、マスクのペリクル（ｐｅｌｌｉｃｌｅ）面及びベース（ｇｌａｓｓ）面上の汚染粒子の大きさや位置を検出することができる。検出結果により、リソグラフィ機操作システム又は操作者は、該マスクが後続の露光過程に使用されることができるかを判定できる。検出結果はマスク上の汚染粒子を除去する際の入力データとすることができる。 Mask particle size detection equipment, as one of the main components of a lithography machine mask transport subsystem, is capable of detecting the size and location of contaminant particles on the pellicle and glass surfaces of the mask. The detection results allow a lithographic machine operating system or operator to determine if the mask can be used in subsequent exposure processes. The detection results can be input data for removing contaminant particles on the mask.

図８は、本出願の実施例が提供するマスク粒度検出機器の検出原理図であり、図８に示すように、マスクのペリクル２０１及びベース２０２の表面には、それぞれに１セットの照明及び検知ユニットが配置される。粒子に対する検知感度を向上させるために、マスク粒度検出は、画素サイズ未満の粒子を検知可能な散乱暗視野測定技術を採用する。 FIG. 8 is a detection principle diagram of a mask particle size detection device provided by an embodiment of the present application. As shown in FIG. Units are placed. To improve detection sensitivity to particles, mask particle size detection employs a scattering dark field measurement technique that can detect particles smaller than the pixel size.

光源６０１が生じた光は、照明システム６０２を介してコリメートされ、ビーム拡大され、均一化された後、一定の傾きでｐｅｌｌｉｃｌｅ面（又はｇｌａｓｓ面）に入射し、ｐｅｌｌｉｃｌｅ面には一本の高輝度の線形光スポットを形成し、該光スポットは検知領域であり、検知領域は第３方向Ｙに沿って分布され、検知領域に汚染粒子がない場合、光束は正反射方向に沿って吸収装置６０３に入り、この時、検知ユニット６０４は光信号を検出できない。検知領域に汚染粒子がある場合、部分の光束が粒子により散乱されて検知ユニット６０４に入り、検出した光強度の値により粒子サイズを確定する。移動機構がマスクを載置して第２方向Ｘに沿って移動し、検知領域は、マスクの表面全体を走査する。 Light produced by light source 601 is collimated, beam-expanded, and homogenized through illumination system 602, and then incident on the pellicle surface (or glass surface) at a constant tilt. Forming a linear light spot of brightness, the light spot is the detection area, the detection area is distributed along the third direction Y, and if there is no contaminant particles in the detection area, the light flux will be reflected by the absorber along the specular direction. 603 is entered, at which time the detection unit 604 cannot detect the light signal. If there is a contaminant particle in the sensing area, part of the light flux will be scattered by the particle and enter the sensing unit 604, and the detected light intensity value will determine the particle size. A moving mechanism places the mask and moves along the second direction X, and the detection area scans the entire surface of the mask.

用語「上」などの方位又は位置関係は、図面に示された方位又は位置関係に基づくものであり、単に説明しやすくし操作を簡略化するためのものであり、指定された装置又は素子が必ず特定の方位を有し、特定の方位で構成及び操作されることを指示又は示唆するものではないことを理解する必要があり、よって、本出願を限定するものと理解すべきではない。 Any orientation or positional relationship, such as the term "above", is based on the orientation or positional relationship shown in the drawings and is merely for ease of description and ease of operation, and is intended only for purposes of ease of description and operation when the designated device or element is It should be understood that it does not necessarily have a particular orientation, nor is it intended to be constructed or implied to be constructed or operated in a particular orientation, and thus should not be construed as limiting the present application.

本明細書の説明において、参照用語「一実施例」などの説明は、該実施例と結び付ける特徴、構造、材料、または特色が、本出願の少なくとも１つの実施例または例示に含まれることを意味する。本明細書において、上述した用語の模式的な表現は必ずしも同じ実施例を指すものではない。 In the description herein, a description such as reference to the term "one embodiment" means that the feature, structure, material, or feature associated with that embodiment is included in at least one embodiment or example of this application. do. As used herein, the schematic representations of the terms above do not necessarily refer to the same embodiment.

また、本明細書は実施形態に従って説明されているが、各実施形態には１つの独立した技術方案のみが含まれるわけではなく、明細書のような説明方式は、デバイスを明確にするためだけであり、当業者は説明書を全体として、各実施例における技術方案も適切に組み合わせられて当業者が理解可能な他の実施形態を形成するということを理解すべきである。 In addition, although the present specification is described according to the embodiments, each embodiment does not include only one independent technical solution, and the description method as in the specification is only for the purpose of clarifying the device. , and those skilled in the art should understand that the technical solutions in each embodiment can also be properly combined to form other embodiments that can be understood by those skilled in the art.

Claims (13)

少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得することと、
前記少なくとも１つの標定点から測定対象であるマスク上の第１検出点までの前記第１方向に沿った距離、前記少なくとも１つの標定点から測定対象であるマスク上の第２検出点までの前記第１方向に沿った距離、及び前記少なくとも１つの標定点から測定対象であるマスク上の第３検出点までの前記第１方向に沿った距離をそれぞれ取得し、ここで、前記第１検出点と前記第２検出点の前記基準面内での投影が第２方向に沿って配列され、前記第１検出点と前記第３検出点の前記基準面内での投影が第３方向に沿って配列され、前記第１方向と、第２方向と、第３方向とは互いに垂直であり、前記基準面が前記第１方向に垂直であることと、
前記第１検出点から対応する標定点までの前記第１方向に沿った距離、前記第１検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、前記第２検出点から対応する標定点までの前記第１方向に沿った距離、前記第２検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、及び前記第１検出点と前記第２検出点の前記第２方向に沿った距離により、前記基準面に対する前記測定対象であるマスクの前記第３方向回りの偏向角度を算出することと、
前記第１検出点から対応する標定点までの前記第１方向に沿った距離、前記第１検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、前記第３検出点から対応する標定点までの前記第１方向に沿った距離、前記第３検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、及び前記第１検出点と前記第３検出点の前記第３方向に沿った距離により、前記基準面に対する前記測定対象であるマスクの前記第２方向回りの偏向角度を算出することと、を含み、
前記少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得する前に、
標定マスクをレベリングすることにより、前記標定マスクが前記第１方向に垂直で、前記標定マスクの表面が前記基準面であるようにすることをさらに含む、マスク姿勢監視方法。 obtaining a distance along a first direction from at least one control point to a reference surface;
The distance along the first direction from the at least one control point to the first detection point on the mask to be measured, and the distance from the at least one control point to the second detection point on the mask to be measured Obtaining a distance along a first direction and a distance along the first direction from the at least one control point to a third detection point on the mask to be measured, wherein the first detection point and the projections of the second detection points within the reference plane are arranged along a second direction, and the projections of the first detection points and the third detection points within the reference plane are arranged along a third direction arranged, the first direction, the second direction, and the third direction are perpendicular to each other, and the reference plane is perpendicular to the first direction;
A distance along the first direction from the first detection point to the corresponding control point, a distance along the first direction from the control point corresponding to the first detection point to the reference plane, and the second detection. The distance along the first direction from a point to the corresponding control point, the distance along the first direction from the control point corresponding to the second detection point to the reference plane, and the first detection point and the calculating a deflection angle of the mask to be measured about the third direction with respect to the reference plane from the distance of the second detection point along the second direction;
A distance along the first direction from the first detection point to the corresponding control point, a distance along the first direction from the control point corresponding to the first detection point to the reference plane, and the third detection. The distance along the first direction from a point to the corresponding control point, the distance along the first direction from the control point corresponding to the third detection point to the reference plane, and the first detection point and the calculating the deflection angle of the mask to be measured about the second direction with respect to the reference plane, based on the distance of the third detection point along the third direction;
Before obtaining the distance along the first direction from the at least one control point to the reference plane,
The mask orientation monitoring method , further comprising leveling an orientation mask so that the orientation mask is perpendicular to the first direction and a surface of the orientation mask is the reference plane . 前記標定点が第１標定点及び第２標定点を含み、前記第１標定点及び第２標定点が前記第２方向に沿って配列され、前記少なくとも１つの標定点から測定対象であるマスク上の第１検出点までの前記第１方向に沿った距離、前記少なくとも１つの標定点から測定対象であるマスク上の第２検出点までの前記第１方向に沿った距離、及び前記少なくとも１つの標定点から測定対象であるマスク上の第３検出点までの前記第１方向に沿った距離をそれぞれ取得することは、
前記第１標定点から前記第１検出点までの前記第１方向に沿った距離、及び前記第２標定点から前記第２検出点までの前記第１方向に沿った距離を取得することと、
前記第３方向に沿って前記測定対象であるマスクを移動し、前記第１標定点から前記第３検出点までの前記第１方向に沿った距離を取得し、ここで、前記測定対象であるマスクの前記第３方向に沿って移動する距離が前記第１検出点と第３検出点の前記第３方向に沿った距離であることと、を含む、請求項１に記載のマスク姿勢監視方法。 The control points include a first control point and a second control point, the first control points and the second control points are arranged along the second direction, and a mask to be measured from the at least one control point A distance along the first direction to a first detection point of, a distance along the first direction from the at least one control point to a second detection point on the mask to be measured, and the at least one Acquiring the respective distances along the first direction from the control point to the third detection point on the mask to be measured,
obtaining a distance along the first direction from the first control point to the first detection point and a distance along the first direction from the second control point to the second detection point;
moving the mask to be measured along the third direction, obtaining a distance along the first direction from the first control point to the third detection point, wherein 2. The mask posture monitoring method according to claim 1, wherein the moving distance of the mask along the third direction is the distance along the third direction between the first detection point and the third detection point. . 前記第１標定点及び前記第２標定点が前記測定対象であるマスクの同側又は異側に位置する、請求項２に記載のマスク姿勢監視方法。 3. The mask posture monitoring method according to claim 2 , wherein said first control point and said second control point are positioned on the same side or different sides of said mask to be measured. 前記標定点が第３標定点及び第４標定点を含み、前記第３標定点及び第４標定点が前記第３方向に沿って配列され、前記少なくとも１つの標定点から測定対象であるマスク上の第１検出点までの前記第１方向に沿った距離、前記少なくとも１つの標定点から測定対象であるマスク上の第２検出点までの前記第１方向に沿った距離、及び前記少なくとも１つの標定点から測定対象であるマスク上の第３検出点までの前記第１方向に沿った距離をそれぞれ取得することは、
前記第３標定点から前記第１検出点までの前記第１方向に沿った距離、及び前記第４標定点から前記第３検出点までの前記第１方向に沿った距離を取得することと、
前記第２方向に沿って前記測定対象であるマスクを移動し、前記第３標定点から前記第２検出点までの前記第１方向に沿った距離を取得し、ここで、前記測定対象であるマスクの前記第２方向に沿って移動する距離が前記第１検出点と前記第２検出点の前記第２方向に沿った距離であることと、を含む、請求項１に記載のマスク姿勢監視方法。 The control points include a third control point and a fourth control point, the third control points and the fourth control points are arranged along the third direction, and the at least one control point is measured from the at least one control point on the mask. A distance along the first direction to a first detection point of, a distance along the first direction from the at least one control point to a second detection point on the mask to be measured, and the at least one Acquiring the respective distances along the first direction from the control point to the third detection point on the mask to be measured,
obtaining a distance along the first direction from the third control point to the first detection point and a distance along the first direction from the fourth control point to the third detection point;
moving the mask to be measured along the second direction to acquire a distance along the first direction from the third control point to the second detection point, wherein 2. The mask posture monitoring according to claim 1, wherein the distance that the mask moves along the second direction is the distance along the second direction between the first detection point and the second detection point. Method. 前記第３標定点及び前記第４標定点が前記測定対象であるマスクの同側又は異側に位置する、請求項４に記載のマスク姿勢監視方法。 5. The mask posture monitoring method according to claim 4 , wherein said third control point and said fourth control point are located on the same side or different sides of said mask to be measured. 前記標定点が第５標定点を含み、前記少なくとも１つの標定点から測定対象であるマスク上の第１検出点までの前記第１方向に沿った距離、前記少なくとも１つの標定点から測定対象であるマスク上の第２検出点までの前記第１方向に沿った距離、及び前記少なくとも１つの標定点から測定対象であるマスク上の第３検出点までの前記第１方向に沿った距離をそれぞれ取得することは、
前記第２方向及び第３方向のうちの少なくとも１つの方向に沿って前記測定対象であるマスクを移動し、前記第５標定点から前記第１検出点までの前記第１方向に沿った距離、前記第５標定点から前記第２検出点までの前記第１方向に沿った距離、及び前記第５標定点から前記第３検出点までの前記第１方向に沿った距離をそれぞれ取得し、ここで、前記測定対象であるマスクの前記第２方向に沿って移動する距離が前記第１検出点と前記第２検出点の前記第２方向に沿った距離であり、前記測定対象であるマスクの前記第３方向に沿って移動する距離が前記第１検出点と前記第３検出点の前記第３方向に沿った距離であることを含む、請求項１に記載のマスク姿勢監視方法。 The control points include a fifth control point, the distance along the first direction from the at least one control point to the first detection point on the mask to be measured, and the distance from the at least one control point to the measurement target A distance along the first direction to a second detection point on a certain mask, and a distance along the first direction from the at least one control point to a third detection point on the mask to be measured, respectively. to get
a distance along the first direction from the fifth control point to the first detection point by moving the mask to be measured along at least one of the second direction and the third direction; obtaining a distance along the first direction from the fifth control point to the second detection point and a distance along the first direction from the fifth control point to the third detection point; the distance that the mask to be measured moves along the second direction is the distance along the second direction between the first detection point and the second detection point; 2. The mask posture monitoring method according to claim 1, wherein the moving distance along said third direction is the distance along said third direction between said first detection point and said third detection point. 前記基準面に対する前記測定対象であるマスクの前記第３方向回りの偏向角度を算出することは、
以下の式により、前記基準面に対する前記測定対象であるマスクの前記第３方向回りの偏向角度を算出し、
Figure 0007216828000005
 ここで、θ１が前記基準面に対する前記測定対象であるマスクの前記第３方向回りの偏向角度であり、Ｈ１’が前記第１検出点から対応する標定点までの前記第１方向に沿った距離であり、Ｈ１が前記第１検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離であり、Ｈ２’が前記第２検出点から対応する標定点までの前記第１方向に沿った距離であり、Ｈ２が前記第２検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離であり、Ｌ１が前記第１検出点と第２検出点の前記第２方向に沿った距離であることを含む、請求項１に記載のマスク姿勢監視方法。 Calculating the deflection angle of the mask to be measured about the third direction with respect to the reference plane includes:
calculating the deflection angle about the third direction of the mask to be measured with respect to the reference plane by the following formula;
Figure 0007216828000005
 Here, θ1 is the deflection angle of the mask to be measured about the third direction with respect to the reference plane, and H1′ is the distance along the first direction from the first detection point to the corresponding control point. , H1 is the distance along the first direction from the control point corresponding to the first detection point to the reference plane, and H2′ is the first distance from the second detection point to the corresponding control point. H2 is the distance along the first direction from the control point corresponding to the second detection point to the reference plane, and L1 is the distance between the first detection point and the second detection point. 2. The mask pose monitoring method of claim 1, comprising being the distance along the second direction. 前記基準面に対する前記測定対象であるマスクの前記第２方向回りの偏向角度を算出することは、
以下の式により、前記基準面に対する前記測定対象であるマスクの前記第２方向回りの偏向角度を算出し、
Figure 0007216828000006
 ここで、θ２が前記基準面に対する前記測定対象であるマスクの前記第２方向回りの偏向角度であり、Ｈ１’が前記第１検出点から対応する標定点までの前記第１方向に沿った距離であり、Ｈ１が前記第１検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離であり、Ｈ３’が前記第３検出点から対応する標定点までの前記第１方向に沿った距離であり、Ｈ３が前記第３検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離であり、Ｌ２が前記第１検出点と第３検出点の前記第３方向に沿った距離であることを含む、請求項１に記載のマスク姿勢監視方法。 Calculating the deflection angle about the second direction of the mask to be measured with respect to the reference plane includes:
calculating the deflection angle about the second direction of the mask to be measured with respect to the reference plane by the following formula;
Figure 0007216828000006
 Here, θ2 is the deflection angle of the mask to be measured about the second direction with respect to the reference plane, and H1′ is the distance along the first direction from the first detection point to the corresponding control point. , H1 is the distance along the first direction from the control point corresponding to the first detection point to the reference plane, and H3′ is the first distance from the third detection point to the corresponding control point. H3 is the distance along the first direction from the control point corresponding to the third detection point to the reference plane, and L2 is the distance between the first detection point and the third detection point. 2. The method of mask posture monitoring according to claim 1, comprising being the distance along the third direction. 測定対象であるマスクの上方に設けられ、少なくとも１つの標定点から基準面までの第１方向に沿った距離を取得し、及び、前記少なくとも１つの標定点から測定対象であるマスク上の第１検出点までの前記第１方向に沿った距離、前記少なくとも１つの標定点から測定対象であるマスク上の第２検出点までの前記第１方向に沿った距離、及び前記少なくとも１つの標定点から測定対象であるマスク上の第３検出点までの前記第１方向に沿った距離をそれぞれ取得し、ここで、前記第１方向と、第２方向と、第３方向とは互いに垂直であり、前記基準面が前記第１方向に垂直であり、前記第１検出点と前記第２検出点の前記基準面内での投影が前記第２方向に沿って配列され、前記第１検出点と前記第３検出点の前記基準面内での投影が前記第３方向に沿って配列される、ように構成される少なくとも１つの距離センサと、
前記測定対象であるマスクを前記第２方向及び前記第３方向のうちの少なくとも１つの方向に沿って移動するように駆動するように構成される移動機構と、
前記第１検出点から対応する標定点までの前記第１方向に沿った距離、前記第１検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、前記第２検出点から対応する標定点までの前記第１方向に沿った距離、前記第２検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、及び第１検出点と前記第２検出点の前記第２方向に沿った距離により、前記基準面に対する前記測定対象であるマスクの前記第３方向回りの偏向角度を算出し、及び、
前記第１検出点から対応する標定点までの前記第１方向に沿った距離、前記第１検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、前記第３検出点から対応する標定点までの前記第１方向に沿った距離、前記第３検出点に対応する標定点から前記基準面までの前記第１方向に沿った距離、及び第１検出点と前記第３検出点の前記第３方向に沿った距離により、前記基準面に対する前記測定対象であるマスクの前記第２方向回りの偏向角度を算出する、ように構成される制御算出ユニットと、を含む、マスク姿勢監視装置。 provided above a mask to be measured, obtaining a distance along a first direction from at least one control point to a reference plane; a distance along the first direction to a detection point, a distance along the first direction from the at least one control point to a second detection point on a mask to be measured, and from the at least one control point obtaining respective distances along the first direction to a third detection point on the mask to be measured, wherein the first, second and third directions are perpendicular to each other; The reference plane is perpendicular to the first direction, projections of the first detection point and the second detection point within the reference plane are arranged along the second direction, and the first detection point and the at least one distance sensor configured such that a projection of a third detection point in the reference plane is arranged along the third direction;
a moving mechanism configured to drive the mask to be measured so as to move along at least one of the second direction and the third direction;
A distance along the first direction from the first detection point to the corresponding control point, a distance along the first direction from the control point corresponding to the first detection point to the reference plane, and the second detection. The distance along the first direction from the point to the corresponding control point, the distance along the first direction from the control point corresponding to the second detection point to the reference plane, and the first detection point and the first detection point. 2 calculating a deflection angle of the mask to be measured about the third direction with respect to the reference plane from the distance of the detection points along the second direction;
A distance along the first direction from the first detection point to the corresponding control point, a distance along the first direction from the control point corresponding to the first detection point to the reference plane, and the third detection. The distance along the first direction from the point to the corresponding control point, the distance along the first direction from the control point corresponding to the third detection point to the reference plane, and the distance along the first direction from the control point corresponding to the third detection point to the reference plane. a control calculation unit configured to calculate the deflection angle of the mask to be measured about the second direction with respect to the reference plane, based on the distance of three detection points along the third direction; Mask posture monitor. 前記マスク姿勢監視装置が、前記第２方向に沿って配列される２つの距離センサを含む、請求項９に記載のマスク姿勢監視装置。 10. The mask pose monitor according to claim 9 , wherein the mask pose monitor includes two range sensors arranged along the second direction. 前記マスク姿勢監視装置が、前記第３方向に沿って配列される２つの距離センサを含む、請求項９に記載のマスク姿勢監視装置。 10. The mask attitude monitor according to claim 9 , wherein said mask attitude monitor includes two range sensors arranged along said third direction. 前記２つの距離センサが、前記測定対象であるマスクの同側又は異側に位置する、請求項１０又は１１に記載のマスク姿勢監視装置。 The mask posture monitoring device according to claim 10 or 11 , wherein the two distance sensors are positioned on the same side or different sides of the mask to be measured. 請求項９～１２のいずれか一項に記載のマスク姿勢監視装置を含む、マスク粒度検出機器。 A mask granularity detection apparatus comprising a mask posture monitor according to any one of claims 9-12 .
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