JP7194120B2 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 103
- 150000004767 nitrides Chemical class 0.000 title claims description 81
- 239000012535 impurity Substances 0.000 claims description 84
- 239000000463 material Substances 0.000 claims description 13
- 238000003475 lamination Methods 0.000 claims description 6
- KBOPZPXVLCULAV-UHFFFAOYSA-M mesalaminate(1-) Chemical compound NC1=CC=C(O)C(C([O-])=O)=C1 KBOPZPXVLCULAV-UHFFFAOYSA-M 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 279
- 238000010586 diagram Methods 0.000 description 35
- 239000000758 substrate Substances 0.000 description 24
- 239000000370 acceptor Substances 0.000 description 22
- 230000007423 decrease Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 229910052725 zinc Inorganic materials 0.000 description 8
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Description
(1)
電子走行層と、
前記電子走行層上に形成された電子供給層と、
前記電子走行層上に配置されたゲート電極と、
前記電子供給層と前記ゲート電極との間に配置され、かつZnを不純物として含有する窒化物半導体からなるゲート層と
前記ゲート電極を挟むように配置され、前記電子供給層に電気的に接続されたソース電極およびドレイン電極とを含む、窒化物半導体装置。
(2)
前記ゲート層の厚さが60nm以上であり、前記ゲート層のZn濃度が1×1019cm-3以上である、(1)に記載の窒化物半導体装置。
(3)
前記ゲート層の厚さは、60nm~165nmである、(2)に記載の窒化物半導体装置。
(4)
前記ゲート層の厚さは、80nm以上である、(2)または(3)に記載の窒化物半導体装置。
2 (基板)第1面
3 (基板)第2面
4 基板
5 半導体積層構造
6 バッファ層
7 第1不純物層
8 電子走行層
9 電子供給層
10 キャップ層
11 第1辺
12 第2辺
13 第3辺
14 第4辺
15 ソース電極膜
16 ゲート電極膜
17 ドレイン電極膜
20 領域
21 表面絶縁膜
22 ソースパッド
23 ゲートパッド
24 ドレインパッド
25 開口
26 開口
27 開口
28 界面
29 二次元電子ガス
30 凹部
31 壁面
32 底面
33 絶縁層
34 ゲート電極
35 第2絶縁層
36 ソースコンタクトホール
37 ドレインコンタクトホール
38 ソース電極
39 ドレイン電極
40 (ソース電極)下層
41 (ソース電極)上層
42 (ドレイン電極)下層
43 (ドレイン電極)上層
44 アクティブ領域
50 窒化物半導体層
51 第2不純物層
52 コンタクト層
53 壁面
54 メサ積層部
55 延出部
60 窒化物半導体装置
61 ゲート層
Claims (15)
- Al1-xGaxN(0<X≦1)系材料からなり、価電子帯からのアクセプタ準位の深さ(ET-EV)が0.3eV以上、0.6eV未満となる第1不純物を含有する第1不純物層と、
前記第1不純物層上に形成された電子走行層と、
前記電子走行層上に形成された電子供給層と、
前記電子走行層上に配置されたゲート電極と、
前記ゲート電極を挟むように配置され、前記電子供給層に電気的に接続されたソース電極およびドレイン電極と、
前記電子供給層と前記ゲート電極との間に配置され、かつZnのみを不純物として含有する窒化物半導体からなるゲート層とを含み、
前記ゲート層の厚さが60nm以上であり、前記ゲート層のZn濃度が1×10 19 cm -3 以上である、窒化物半導体装置。 - ホール放出時間が1s以下である、請求項1に記載の窒化物半導体装置。
- 前記電子走行層は、アンドープの第1窒化物半導体層を含む、請求項1または2に記載の窒化物半導体装置。
- 前記アンドープの第1窒化物半導体層は、アンドープのAl1-xGaxN(0<X≦1)系材料からなる層を含む、請求項3に記載の窒化物半導体装置。
- 前記電子供給層がAlN層であり、
前記ゲート層がZnのみを不純物として含有するGaN層である、請求項4に記載の窒化物半導体装置。 - 前記アンドープの第1窒化物半導体層がGaN層である、請求項5に記載の窒化物半導体装置。
- 前記電子走行層は、0.3μm以下の厚さを有する、請求項1~6のいずれか一項に記載の窒化物半導体装置。
- 前記第1不純物層と前記電子走行層との界面から前記電子走行層側に0.05μm以下の厚さで、前記第1不純物の濃度が1桁減少している、請求項1~7のいずれか一項に記載の窒化物半導体装置。
- 前記第1不純物は、Znである、請求項1~8のいずれか一項に記載の窒化物半導体装置。
- 前記第1不純物層のZn濃度が5×1017cm-3~5×1019cm-3であり、かつ前記第1不純物層は、Cを5×1017cm-3未満の濃度で含有している、請求項9に記載の窒化物半導体装置。
- 前記ゲート層は、Al1-xGaxN(0<X≦1)系材料からなり、価電子帯からのアクセプタ準位の深さ(ET-EV)が0.3eV以上、0.6eV未満となるゲート層を含み、
前記ゲート層上に形成されたアンドープの第2窒化物半導体層をさらに含む、請求項1~10のいずれか一項に記載の窒化物半導体装置。 - 前記アンドープの第2窒化物半導体層および前記ゲート層に跨る壁面を有するメサ積層部を含み、
前記電子供給層は、前記メサ積層部に対して前記メサ積層部の積層方向に交差する方向に延びる延出部を含み、
前記ソース電極および前記ドレイン電極は、前記延出部に接続されている、請求項11に記載の窒化物半導体装置。 - 前記アンドープの第2窒化物半導体層は、アンドープのAl1-xGaxN(0<X≦1)系材料からなる層を含み、Zn濃度が5×1016cm-3以下である、請求項11または12に記載の窒化物半導体装置。
- 前記ゲート層の厚さは、60nm~165nmである、請求項1~13のいずれか一項に記載の窒化物半導体装置。
- 前記ゲート層の厚さは、80nm以上である、請求項1~14のいずれか一項に記載の窒化物半導体装置。
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US20220302262A1 (en) | 2022-09-22 |
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