JP7193731B2 - エッチング方法及びエッチング装置 - Google Patents
エッチング方法及びエッチング装置 Download PDFInfo
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- JP7193731B2 JP7193731B2 JP2019066761A JP2019066761A JP7193731B2 JP 7193731 B2 JP7193731 B2 JP 7193731B2 JP 2019066761 A JP2019066761 A JP 2019066761A JP 2019066761 A JP2019066761 A JP 2019066761A JP 7193731 B2 JP7193731 B2 JP 7193731B2
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- etching
- gas
- film
- amine
- substrate
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- 238000005530 etching Methods 0.000 title claims description 174
- 238000000034 method Methods 0.000 title claims description 46
- 239000007789 gas Substances 0.000 claims description 221
- 150000001412 amines Chemical class 0.000 claims description 94
- 238000012545 processing Methods 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000011148 porous material Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000012360 testing method Methods 0.000 description 81
- 235000012431 wafers Nutrition 0.000 description 79
- 238000011156 evaluation Methods 0.000 description 75
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 37
- 229920005591 polysilicon Polymers 0.000 description 37
- 230000008569 process Effects 0.000 description 29
- 238000012546 transfer Methods 0.000 description 21
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 18
- 239000007795 chemical reaction product Substances 0.000 description 17
- 238000007789 sealing Methods 0.000 description 17
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 16
- 238000010926 purge Methods 0.000 description 11
- 230000008016 vaporization Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000009834 vaporization Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 6
- MGOLNIXAPIAKFM-UHFFFAOYSA-N 2-isocyanato-2-methylpropane Chemical compound CC(C)(C)N=C=O MGOLNIXAPIAKFM-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- CEBDXRXVGUQZJK-UHFFFAOYSA-N 2-methyl-1-benzofuran-7-carboxylic acid Chemical compound C1=CC(C(O)=O)=C2OC(C)=CC2=C1 CEBDXRXVGUQZJK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 1
- PLZVEHJLHYMBBY-UHFFFAOYSA-N Tetradecylamine Chemical compound CCCCCCCCCCCCCCN PLZVEHJLHYMBBY-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- XRURPHMPXJDCOO-UHFFFAOYSA-N iodine heptafluoride Chemical compound FI(F)(F)(F)(F)(F)F XRURPHMPXJDCOO-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- General Chemical & Material Sciences (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
前記孔壁にアミンが吸着した基板に、前記シリコン含有膜をエッチングするためのエッチングガスを供給するエッチングガス供給工程と、
を含む。
本開示の技術に関連して行われた評価試験について説明する。
・評価試験1
評価試験1では、既述したエッチングモジュール5と同様に、真空雰囲気が形成される処理容器51内に各種のガスを供給可能に構成された試験用の装置を用いて、図1で説明した膜構造を有する複数のウエハWに対して、ポリシリコン膜14をドライエッチングする処理を行った。エッチング開始前の各ウエハWについて、ポリシリコン膜14の膜厚は130nm、酸化シリコン膜12の膜厚は80nmである。また、エッチング処理としては、処理容器51内の圧力を0.1Torr(13.3Pa)~10Torr(1333Pa)とし、ClF3ガスとN2ガスとの混合ガスを処理容器51内に供給して行った。そのように処理容器51内に供給する流量について、ClF3ガスの流量は50sccm~400sccm、N2ガスの流量は100sccm~1000sccmとした。そしてウエハWによっては、エッチングの合間にエッチングガス以外のガスの供給を行った。このエッチングの合間のガス供給は、エッチングガスのSiOCN膜15の孔部16の通過を防ぐための封止処理であり、当該封止処理は、処理容器51内の圧力を0.1Torr(13.3Pa)~10Torr(1333Pa)として行った。
評価試験2-1として、試験用の装置の処理容器内に、表面を洗浄したSi(シリコン)からなるウエハWを格納して当該処理容器内を真空雰囲気とし、t-ブチルアミンガスを5分間供給した。その後、ウエハWにIF7ガスを1分間供給し、然る後、当該ウエハWを100℃~400℃で5分間加熱するアニール処理を行った。また、評価試験2-2として、t-ブチルアミンガスの代わりにイソシアン酸t-ブチルガスを1分間供給したことを除いては、評価試験2-1と同様の処理を行った。これら評価試験2-1、2-2では、t-ブチルアミンガスまたはイソシアン酸t-ブチルガスの供給後でIF7ガスの供給前、IF7ガスの供給後でアニール処理前、アニール処理後の夫々において、ウエハWの表面を撮像した。さらに、IF7ガスの供給前と供給後とにおけるウエハWの重量差を測定した。
評価試験3として、各々N(窒素)を含む分子であるNH3(アンモニア)、ブチルアミン、ヘキシルアミン、トリメチルアミンについて、Siを含む各種の分子に対する吸着エネルギーをシミュレーションにより測定した。具体的にはSi(シリコン)、SiC(炭化シリコン)、SiN(窒化シリコン)、SiO2CN、及びSiO(酸化シリコン)に対する吸着エネルギーを測定した。
評価試験4として、ClF3に対し、ブチルアミン、ヘキシルアミン、デシルアミンを夫々反応させたときの活性化エネルギー(単位:eV)、自由エネルギーの変化量(単位:eV)を算出した。ClF3とブチルアミンとの反応について、活性化エネルギーは0.889eV、自由エネルギーの変化量は-1.018eVである。ClF3とヘキシルアミンとの反応について、活性化エネルギーは0.888eV、自由エネルギーの変化量は-1.019eVである。ClF3とブチルアミンとの反応について、活性化エネルギーは0.889eV、自由エネルギーの変化量は-1.018eVである。ClF3とデシルアミンとの反応について、活性化エネルギーは0.888eV、自由エネルギーの変化量は-1.022eVである。なお、比較例としてClF3とNH3との反応についての活性化エネルギー、自由エネルギーの変化量を示しておくと、夫々1.559eV、-0.492eVである。
11 SiGe膜
14 ポリシリコン膜
15 SiOCN膜
16 孔部
21 アミン
22 エッチングガス
Claims (9)
- 基板にエッチングガスを供給して当該基板に設けられるシリコン含有膜をエッチングするエッチング方法において、
前記シリコン含有膜、多孔質膜、前記エッチングガスに対して被エッチング性を有するエッチング非対象膜がこの順に隣り合って設けられる前記基板にアミンガスを供給し、前記多孔質膜の孔部を形成する孔壁にアミンを吸着させるアミンガス供給工程と、
前記孔壁にアミンが吸着した基板に、前記シリコン含有膜をエッチングするためのエッチングガスを供給するエッチングガス供給工程と、
を含むエッチング方法。 - 前記アミンガス供給工程と前記エッチングガス供給工程とを、この順に複数回繰り返す繰り返し工程を含む請求項1記載のエッチング方法。
- 前記アミンガスを供給する期間と前記エッチングガスを供給する期間との間、前記基板の周囲を排気する工程を含む請求項1または2記載のエッチング方法。
- 前記基板への前記エッチングガスの供給と前記基板への前記アミンガスの供給とは、同時に行われる請求項1記載のエッチング方法。
- 前記アミンガス供給工程及び前記エッチングガス供給工程を行った後、前記孔部からアミンを除去するために、前記基板を加熱する加熱工程を含む請求項1ないし4のいずれか一つに記載のエッチング方法。
- 前記加熱工程は前記基板を100℃~400℃に加熱する工程である請求項5記載のエッチング方法。
- 前記多孔質膜は酸素を含む膜である請求項1ないし6のいずれか一つに記載のエッチング方法。
- 前記シリコン含有膜、前記多孔質膜、前記エッチング非対象膜は横方向に隣り合い、当該エッチング非対象膜の上側には、エッチングマスク膜が形成されている請求項1ないし7のいずれか一つに記載のエッチング方法。
- 基板にエッチングガスを供給して当該基板に設けられるシリコン含有膜をエッチングするエッチング装置において、
処理容器と、
前記処理容器内に設けられ、前記シリコン含有膜、多孔質膜、前記エッチングガスに対して被エッチング性を有するエッチング非対象膜がこの順に隣り合って設けられる前記基板を載置するための載置部と、
前記基板にアミンガスを供給し、前記多孔質膜の孔部を形成する孔壁にアミンを吸着させるアミンガス供給部と、
前記孔壁にアミンが吸着した基板に、前記シリコン含有膜をエッチングするためのエッチングガスを供給するエッチングガス供給部と、
を含むエッチング装置。
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