JP7189848B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP7189848B2 JP7189848B2 JP2019145332A JP2019145332A JP7189848B2 JP 7189848 B2 JP7189848 B2 JP 7189848B2 JP 2019145332 A JP2019145332 A JP 2019145332A JP 2019145332 A JP2019145332 A JP 2019145332A JP 7189848 B2 JP7189848 B2 JP 7189848B2
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- 239000004065 semiconductor Substances 0.000 title claims description 304
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 134
- 229910052697 platinum Inorganic materials 0.000 claims description 45
- 239000012535 impurity Substances 0.000 claims description 37
- 229910021332 silicide Inorganic materials 0.000 claims description 37
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 111
- 239000011229 interlayer Substances 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 101150072109 trr1 gene Proteins 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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Description
Claims (5)
- 第1導電形の第1半導体層を含む半導体部と、
前記半導体部の裏面側に設けられた第1電極と、
前記半導体部の表面側に設けられた第2電極と、
前記第2電極と前記半導体部の間に選択的に設けられ、前記半導体部から第1絶縁膜を介して電気的に絶縁され、前記第2電極から第2絶縁膜を介して電気的に絶縁される複数の制御電極と、
前記複数の制御電極のうちの隣り合う2つの制御電極の間に設けられ、前記第2電極と前記半導体部とを電気的に接続するコンタクト部と、
を備え、
前記半導体部は、前記第1半導体層と前記第2電極との間に選択的に設けられた第2導電形の第2半導体層と、前記第2半導体層と前記第2電極との間に選択的に設けられた第1導電形の第3半導体層と、前記第2半導体層と前記第2電極との間に選択的に設けられ、前記第2半導体層の第2導電形不純物よりも高濃度の第2導電形不純物を含む第2導電形の第4半導体層と、をさらに含み、
前記制御電極は、前記第1絶縁膜を介して前記第2半導体層に向き合うように配置され、
前記コンタクト部は、第1導電形の第1半導体領域と、第2導電形の第2半導体領域と、シリサイド領域と、を含み、
前記第1半導体領域は、前記第3半導体層に接し、且つ、電気的に接続され、前記第2半導体領域は、前記第4半導体層に接し、且つ、電気的に接続され、
前記シリサイド領域は、前記第1半導体領域と前記第2電極との間、および、前記第2半導体領域と前記第2電極との間に位置し、白金(Pt)、ルテニウム(Ru)、パラジウム(Pd)、オスミウム(Os)、イリジウム(Ir)および金(Au)のうちの少なくとも1つの元素を含み、
前記第2絶縁膜の前記第2電極に向き合う表面と前記シリサイド領域は、前記半導体部の前記表面に沿った方向に並ぶ、半導体装置。 - 前記半導体部は、前記コンタクト部と同じ前記元素を含む請求項1記載の半導体装置。
- 前記コンタクト部は、前記第2絶縁膜を貫いて、前記第2電極から前記半導体部に向かう方向に伸び、
前記第1半導体領域は、前記半導体部の前記表面に平行な方向において、前記第2絶縁膜と前記第2半導体領域との間に位置する請求項1または2に記載の半導体装置。 - 前記シリサイド領域は、前記第2電極に接し、且つ、電気的に接続される請求項1~3のいずれか1つに記載の半導体装置。
- 半導体ウェーハ上にコンタクトホールを有する絶縁膜を形成し、
前記コンタクトホールを埋め込んだ半導体領域を形成し、
前記絶縁膜および前記半導体領域を覆い、白金(Pt)、ルテニウム(Ru)、パラジウム(Pd)、オスミウム(Os)、イリジウム(Ir)および金(Au)のうちの少なくとも1つの元素を含む金属膜を形成し、
前記半導体領域を介して前記元素を前記半導体ウェーハ中に拡散させる半導体装置の製造方法。
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