JP7185181B2 - 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 - Google Patents
半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 Download PDFInfo
- Publication number
- JP7185181B2 JP7185181B2 JP2018189156A JP2018189156A JP7185181B2 JP 7185181 B2 JP7185181 B2 JP 7185181B2 JP 2018189156 A JP2018189156 A JP 2018189156A JP 2018189156 A JP2018189156 A JP 2018189156A JP 7185181 B2 JP7185181 B2 JP 7185181B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor
- coating
- semiconductor device
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
Claims (3)
- ガラス組成として、モル%で、SiO2 18~43%、B2O3 13~21%、Al2O3 8~21%、ZnO 10~25%、MgO+CaO 10~25%を含有し、実質的に鉛成分を含有しないことを特徴とする半導体素子被覆用ガラス。
- 請求項1に記載の半導体素子被覆用ガラスからなるガラス粉末 75~100質量%、セラミック粉末 0~25%を含有することを特徴とする半導体素子被覆用材料。
- 30~300℃の温度範囲における熱膨張係数が20×10-7/℃以上、且つ55×10-7/℃以下であることを特徴とする請求項2に記載の半導体素子被覆用材料。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018189156A JP7185181B2 (ja) | 2018-10-04 | 2018-10-04 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
CN201980051203.4A CN112512982B (zh) | 2018-10-04 | 2019-09-13 | 半导体元件被覆用玻璃以及使用其的半导体被覆用材料 |
PCT/JP2019/036160 WO2020071093A1 (ja) | 2018-10-04 | 2019-09-13 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
TW108135463A TWI819109B (zh) | 2018-10-04 | 2019-10-01 | 半導體元件被覆用玻璃及使用此的半導體被覆用材料 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018189156A JP7185181B2 (ja) | 2018-10-04 | 2018-10-04 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020055724A JP2020055724A (ja) | 2020-04-09 |
JP7185181B2 true JP7185181B2 (ja) | 2022-12-07 |
Family
ID=70055866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018189156A Active JP7185181B2 (ja) | 2018-10-04 | 2018-10-04 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7185181B2 (ja) |
CN (1) | CN112512982B (ja) |
TW (1) | TWI819109B (ja) |
WO (1) | WO2020071093A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021060001A1 (ja) * | 2019-09-24 | 2021-04-01 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4319215A (en) | 1979-07-13 | 1982-03-09 | Hitachi, Ltd. | Non-linear resistor and process for producing same |
WO2012160704A1 (ja) | 2011-05-26 | 2012-11-29 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2013168236A1 (ja) | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113641A (en) * | 1979-02-22 | 1980-09-02 | Asahi Glass Co Ltd | Insulating glass composition |
US5216207A (en) * | 1991-02-27 | 1993-06-01 | David Sarnoff Research Center, Inc. | Low temperature co-fired multilayer ceramic circuit boards with silver conductors |
JPH08188446A (ja) * | 1995-01-11 | 1996-07-23 | Sumitomo Metal Mining Co Ltd | ガラスセラミック基板 |
JP2004039355A (ja) * | 2002-07-02 | 2004-02-05 | Sumitomo Metal Mining Co Ltd | 導電性組成物 |
JPWO2009119433A1 (ja) * | 2008-03-25 | 2011-07-21 | 日本山村硝子株式会社 | 無鉛ガラス及び無鉛ガラスセラミックス用組成物 |
EP2460780A4 (en) * | 2009-07-31 | 2013-12-04 | Asahi Glass Co Ltd | SEALING GLASS, SEALING MATERIAL AND PASTE FOR SEALING MATERIAL FOR SEMICONDUCTOR DEVICES, AND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF |
JP6064298B2 (ja) * | 2011-08-25 | 2017-01-25 | 日本電気硝子株式会社 | 半導体素子被覆用ガラス |
US9099483B2 (en) * | 2012-01-31 | 2015-08-04 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
-
2018
- 2018-10-04 JP JP2018189156A patent/JP7185181B2/ja active Active
-
2019
- 2019-09-13 WO PCT/JP2019/036160 patent/WO2020071093A1/ja active Application Filing
- 2019-09-13 CN CN201980051203.4A patent/CN112512982B/zh active Active
- 2019-10-01 TW TW108135463A patent/TWI819109B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4319215A (en) | 1979-07-13 | 1982-03-09 | Hitachi, Ltd. | Non-linear resistor and process for producing same |
WO2012160704A1 (ja) | 2011-05-26 | 2012-11-29 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2013168236A1 (ja) | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112512982A (zh) | 2021-03-16 |
WO2020071093A1 (ja) | 2020-04-09 |
JP2020055724A (ja) | 2020-04-09 |
TW202028143A (zh) | 2020-08-01 |
TWI819109B (zh) | 2023-10-21 |
CN112512982B (zh) | 2023-02-24 |
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