JP7158179B2 - 半導体チップ積層体および半導体チップ積層体の製造方法 - Google Patents
半導体チップ積層体および半導体チップ積層体の製造方法 Download PDFInfo
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- JP7158179B2 JP7158179B2 JP2018103563A JP2018103563A JP7158179B2 JP 7158179 B2 JP7158179 B2 JP 7158179B2 JP 2018103563 A JP2018103563 A JP 2018103563A JP 2018103563 A JP2018103563 A JP 2018103563A JP 7158179 B2 JP7158179 B2 JP 7158179B2
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- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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Description
以下、本発明の一実施形態について、詳細に説明する。
図1の(a)は、本実施形態における半導体チップ積層体1Aの構造を示す断面図であり、図1の(b)は、(a)における点線部分の拡大図である。図1の(a)に示すように、半導体チップ積層体1Aは、第一半導体チップ10と、第二半導体チップ20と、接続部30Aとを備えている。
図2の(a)~(e)は、半導体チップ積層体1Aの製造方法を説明するための図である。なお、図2では、第一電極11および第二電極21の図示を省略している。
次に、半導体チップ積層体1Aの製造方法の変形例について説明する。図3の(a)~(d)は、実施形態1における半導体チップ積層体1Aの製造方法の変形例としての製造方法を説明するための図である。
本発明の他の実施形態について、以下に説明する。なお、説明の便宜上、上記実施形態にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。
図4は、(a)は、本実施形態における半導体チップ積層体1Bの構造を示す断面図であり、図4の(b)は、(a)における点線部分の拡大図である。図4の(a)に示すように、半導体チップ積層体1Bは、実施形態1における接続部30Aに代えて接続部30Bを備えている。
図5の(a)~(d)は、半導体チップ積層体1Bの製造方法を説明するための図である。
本発明の態様1に係る半導体チップ積層体は、第一電極を有する第一半導体チップと、第二電極を有する第二半導体チップとを積層し、接続部を介して前記第一電極と前記第二電極とを電気的に接続した半導体チップ積層体であって、前記接続部は、前記第一半導体チップと前記第二半導体チップが積層される方向に沿って並ぶ第一柱状部と第二柱状部とを備えており、前記第一柱状部は、前記第二柱状部を構成する材料よりも熱に対する活性度が高い材料にて構成されており、前記第二柱状部よりも体積が小さくなっており、前記接続部は、高さ方向のアスペクト比が0.5以上である。
10 第一半導体チップ
11 第一電極
20 第二半導体チップ
21 第二電極
30A、30B 接続部
31 第一柱状部
32 第二柱状部
Claims (13)
- 第一電極を有する第一半導体チップと、第二電極を有する第二半導体チップとを積層し、接続部を介して前記第一電極と前記第二電極とを電気的に接続した半導体チップ積層体であって、
前記接続部は、前記第一半導体チップと前記第二半導体チップが積層される方向に沿って並ぶ第一柱状部と第二柱状部とを備えており、
前記第一柱状部は、
前記第二柱状部を構成する材料よりも熱に対する活性度が高い材料にて構成されており、
前記第二柱状部よりも体積が小さくなっており、
前記接続部は、高さ方向のアスペクト比が0.5以上であり、
前記第一柱状部を構成する材料の結晶粒径は、前記第二柱状部を構成する材料の結晶粒径よりも小さいことを特徴とする半導体チップ積層体。 - 第一電極を有する第一半導体チップと、第二電極を有する第二半導体チップとを積層し、接続部を介して前記第一電極と前記第二電極とを電気的に接続した半導体チップ積層体であって、
前記接続部は、前記第一半導体チップと前記第二半導体チップが積層される方向に沿って並ぶ第一柱状部と第二柱状部とを備えており、
前記第一柱状部は、
前記第二柱状部を構成する材料よりも熱に対する活性度が高い材料にて構成されており、
前記第二柱状部よりも体積が小さくなっており、
前記接続部は、高さ方向のアスペクト比が0.5以上であり、
前記第二柱状部は、前記第一柱状部を構成する材料よりもイオンマイグレーションが発生しにくいまたはイオンマイグレーションの発生が同等の材料から構成されることを特徴とする半導体チップ積層体。 - 前記接続部の断面サイズは、1~100μmであり、
前記第一柱状部の高さは、5~5000nmであり、
前記第二柱状部の高さは、0.5~200μmであることを特徴とする請求項1または2に記載の半導体チップ積層体。 - 前記接続部の断面サイズは、1~20μmであり、
前記第一柱状部の高さは、5~5000nmであり、
前記第二柱状部の高さは、0.5~40μmであることを特徴とする請求項1~3のいずれか1項に記載の半導体チップ積層体。 - 前記第一柱状部を構成する材料の融点は、前記第二柱状部を構成する材料の融点よりも低いことを特徴とする請求項1~4のいずれか1項に記載の半導体チップ積層体。
- 前記第一半導体チップと前記第二半導体チップとは、互いに異なる線膨張係数を有することを特徴とする請求項1~5のいずれか1項に記載の半導体チップ積層体。
- 第一電極を有する第一半導体チップと、第二電極を有する第二半導体チップとを積層し、接続部を介して前記第一電極と前記第二電極とを電気的に接続した半導体チップ積層体の製造方法であって、
前記第一半導体チップまたは前記第二半導体チップに、前記接続部の一部となる第二柱状部を形成する第二柱状部形成工程と、
前記第一半導体チップまたは前記第二半導体チップに、前記第一半導体チップと前記第二半導体チップが積層される方向に沿って、(1)前記第二柱状部を構成する材料よりも熱に対する活性度が高い材料にて構成されており、かつ、(2)前記第二柱状部よりも体積が小さい、前記接続部の一部となる第一柱状部を形成する第一柱状部形成工程と、
前記第一柱状部を介して、前記第一半導体チップと前記第二半導体チップとを接合する接合工程と、を含み、
前記接続部は、高さ方向のアスペクト比が0.5以上であり、
前記第二柱状部は、前記第一柱状部を構成する材料よりもイオンマイグレーションが発生しにくいまたはイオンマイグレーションの発生が同等の材料から構成されることを特徴とする半導体チップ積層体の製造方法。 - 第一電極を有する第一半導体チップと、第二電極を有する第二半導体チップとを積層し、接続部を介して前記第一電極と前記第二電極とを電気的に接続した半導体チップ積層体の製造方法であって、
前記第一半導体チップまたは前記第二半導体チップに、前記接続部の一部となる第二柱状部を形成する第二柱状部形成工程と、
前記第一半導体チップまたは前記第二半導体チップに、前記第一半導体チップと前記第二半導体チップが積層される方向に沿って、(1)前記第二柱状部を構成する材料よりも熱に対する活性度が高い材料にて構成されており、かつ、(2)前記第二柱状部よりも体積が小さい、前記接続部の一部となる第一柱状部を形成する第一柱状部形成工程と、
前記第一柱状部を介して、前記第一半導体チップと前記第二半導体チップとを接合する接合工程と、を含み、
前記接続部は、高さ方向のアスペクト比が0.5以上であり、
前記第一柱状部を構成する材料の結晶粒径は、前記第二柱状部を構成する材料の結晶粒径よりも小さいことを特徴とする半導体チップ積層体の製造方法。 - 前記接続部の断面サイズは、1~100μmであり、
前記第一柱状部の高さは、5~5000nmであり、
前記第二柱状部の高さは、0.5~200μmであることを特徴とする請求項7または8に記載の半導体チップ積層体の製造方法。 - 前記接続部の断面サイズは、1~20μmであり、
前記第一柱状部の高さは、5~5000nmであり、
前記第二柱状部の高さは、0.5~40μmであることを特徴とする請求項7~9のいずれか1項に記載の半導体チップ積層体の製造方法。 - 前記第一柱状部形成工程において、導電ナノ粒子を用いて前記第一柱状部を形成することを特徴とする請求項7~10のいずれか1項に記載の半導体チップ積層体の製造方法。
- 前記第一柱状部形成工程において、前記第二柱状部よりも融点が低い材料を用いて前記第一柱状部を形成することを特徴とする請求項7~11のいずれか1項に記載の半導体チップ積層体の製造方法。
- 前記第一半導体チップと前記第二半導体チップとは、互いに異なる線膨張係数を有することを特徴とする請求項7~12のいずれか1項に記載の半導体チップ積層体の製造方法。
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