JP7149802B2 - 半導体製造装置および半導体製造方法 - Google Patents
半導体製造装置および半導体製造方法 Download PDFInfo
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- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- B08B3/04—Cleaning involving contact with liquid
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Description
本発明の実施形態を説明する前に、前提技術に係る半導体製造装置について説明する。図9は、前提技術に係る半導体製造装置の処理チャンバでの薬液処理を示す断面図である。
本発明の実施の形態1について、図面を用いて以下に説明する。なお、実施の形態1において、前提技術で説明したものと同一の構成要素については同一符号を付して説明は省略する。図1は、実施の形態1に係る半導体製造装置の処理チャンバでの薬液処理を示す断面図である。
以上のように、実施の形態1に係る半導体製造装置では、第1開閉弁11cおよび第2開閉弁11dの操作により下面ガスノズル2cを通るガスを温調ガス17と常温ガス16で切り替えることができ、もちろん温調ガス17の設定温度をレシピで変更できるため、温度を任意に変更することが可能である。例えば、硫酸過水でレジストを除去する等の反応律速の薬液処理では、処理時間を短縮するために、薬液温度を上げて反応性を高めるようにしている場合が多いが、薬液の温度と同等の温度に均一にすることが可能となり、ウエハ1全面に対してより均一な温度で薬液処理を行うことができるため、薬液処理の面内均一性を十分に確保することができる。
次に、実施の形態2に係る半導体製造装置について説明する。図6は、実施の形態2に係る半導体製造装置の処理チャンバでの薬液処理を示す断面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
以上のように、実施の形態2に係る半導体製造装置では、下面ガスノズル2dの吐出口はウエハ1の中心部分を囲む部分に位置する。したがって、供給律速の薬液処理等で、ウエハ1の中心部分の周辺部の温度を均一にすることが可能となり、十分な面内均一性を確保することができる。
なお、実施の形態1で水洗処理の処理中に下面ガスノズル2cから常温ガス16を供給しているとしたが、水洗の置換効果を高めるために水洗処理を温水で行う場合には、温水温度に見合った所定の温度に温調された温調ガス17を供給することが適していることは言うまでもない。
Claims (4)
- 半導体ウエハを端部で挟持するチャックステージと、
前記チャックステージを回転させるステージ回転機構と、
前記半導体ウエハの処理面に薬液を吐出する薬液ノズルと、
前記薬液ノズルを前記半導体ウエハの処理面上でスキャンさせる薬液ノズルスキャン機構と、
前記半導体ウエハの前記処理面とは反対側の面側にガスを供給するガスノズルと、
前記ガスノズルに供給される前記ガスを温調するガス温調器と、
前記ガス温調器を通らずに前記ガスノズルに前記ガスを供給可能なガスバイパス配管と、
前記ガス温調器により温調された前記ガス、および前記ガスバイパス配管を通った前記ガスのいずれか一方を前記ガスノズルに供給可能に開閉する開閉弁と、
を備え、
前記開閉弁の操作により前記ガスノズルを通る前記ガスの温度を変更できるようにし、
前記ガスノズルの吐出口は前記半導体ウエハの中心部分を囲む部分に位置し、温調された前記ガスを含む流体は前記ステージ回転機構の中心部分を通って供給され、前記半導体ウエハの前記処理面とは反対側の面の中心部分に供給されない、半導体製造装置。 - 半導体ウエハの処理面に薬液を行き渡らせる薬液処理工程と、
供給するガスの温度を変更する温調工程と、
を備え、
前記薬液処理工程において、前記半導体ウエハの前記処理面とは反対側の面側の中心部分を囲む部分に前記温調工程で温度を変更したガスを供給して前記半導体ウエハの中心部分を除く部分を加熱または冷却し、温調された前記ガスを含む流体は前記半導体ウエハを回転させるステージ回転機構の中心部分を通って供給され、前記半導体ウエハの前記処理面とは反対側の面の中心部分に供給されない、半導体製造方法。 - 前記薬液処理工程の後、前記半導体ウエハの前記処理面を洗浄する水洗処理工程を更に備え、
前記水洗処理工程において、前記半導体ウエハの前記処理面とは反対側の面側に前記温調工程で温度を変更したガスを供給して前記半導体ウエハを加熱または冷却する、請求項2に記載の半導体製造方法。 - 半導体ウエハの処理面を乾燥させる乾燥処理工程と、
供給するガスの温度を変更する温調工程と、
を備え、
前記乾燥処理工程において、前記半導体ウエハの前記処理面とは反対側の面側の中心部分を囲む部分に前記温調工程で温度を変更したガスを供給して前記半導体ウエハの中心部分を除く部分を加熱し、温調された前記ガスを含む流体は前記半導体ウエハを回転させるステージ回転機構の中心部分を通って供給され、前記半導体ウエハの前記処理面とは反対側の面の中心部分に供給されない、半導体製造方法。
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JP2018199718A JP7149802B2 (ja) | 2018-10-24 | 2018-10-24 | 半導体製造装置および半導体製造方法 |
US16/583,418 US11227762B2 (en) | 2018-10-24 | 2019-09-26 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
DE102019216065.4A DE102019216065A1 (de) | 2018-10-24 | 2019-10-18 | Halbleiterherstellungseinrichtung und Halbleiterherstellungsverfahren |
CN201910994155.4A CN111092029B (zh) | 2018-10-24 | 2019-10-18 | 半导体制造装置及半导体制造方法 |
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JP2013112843A (ja) | 2011-11-28 | 2013-06-10 | Tokyo Electron Ltd | めっき処理装置、めっき処理方法および記憶媒体 |
JP2014154858A (ja) | 2013-02-14 | 2014-08-25 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2015050350A (ja) | 2013-09-02 | 2015-03-16 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2015162486A (ja) | 2014-02-26 | 2015-09-07 | 株式会社Screenホールディングス | 基板乾燥装置および基板乾燥方法 |
JP2017118064A (ja) | 2015-12-25 | 2017-06-29 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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US20200135448A1 (en) | 2020-04-30 |
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DE102019216065A1 (de) | 2020-04-30 |
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