JP7117170B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7117170B2 JP7117170B2 JP2018116751A JP2018116751A JP7117170B2 JP 7117170 B2 JP7117170 B2 JP 7117170B2 JP 2018116751 A JP2018116751 A JP 2018116751A JP 2018116751 A JP2018116751 A JP 2018116751A JP 7117170 B2 JP7117170 B2 JP 7117170B2
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- titanium oxide
- light emitting
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- 239000002245 particle Substances 0.000 claims description 295
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 145
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 86
- 239000011248 coating agent Substances 0.000 claims description 82
- 238000000576 coating method Methods 0.000 claims description 82
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 45
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- 239000011787 zinc oxide Substances 0.000 claims description 22
- 238000010521 absorption reaction Methods 0.000 description 23
- 239000002609 medium Substances 0.000 description 17
- 239000006185 dispersion Substances 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 229920002050 silicone resin Polymers 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 206010021143 Hypoxia Diseases 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000004383 yellowing Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
11 基板
12 発光素子
13 透光部材
14 光透過部材
16、17、21、31 被覆体
P1、P2、P3 酸化チタン粒子
PT、PT1 粒子群
Claims (14)
- 基板と、
前記基板上に配置された発光素子と、
前記発光素子上に配置された光透過部材と、
前記基板上に配置され、前記光透過部材の側面を覆い、かつ外部に露出する上面を有する被覆体と、を有し、
前記被覆体は、前記被覆体内に分散された複数の粒子からなる粒子群を有し、
前記粒子群は、前記被覆体の前記上面の近傍だけに分散され、各粒子内において他の部分よりもバンドギャップが狭い部分を有する複数の酸化チタン粒子又は酸化亜鉛粒子を含むことを特徴とする発光装置。 - 前記粒子群における前記複数の粒子は、前記被覆体内において均一な密度で分散されていることを特徴とする請求項1に記載の発光装置。
- 前記粒子群における前記複数の粒子は、前記被覆体内において前記上面から前記基板に向かって徐々に密度が高くなるように分散されていることを特徴とする請求項1に記載の発光装置。
- 前記粒子群は、前記被覆体の前記上面から前記基板に向かって、各粒子内における他の部分よりもバンドギャップが狭い部分の密度が低くなるように分散された複数の酸化チタン粒子又は酸化亜鉛粒子を有することを特徴とする請求項1乃至3のいずれか1つに記載の発光装置。
- 前記被覆体は、前記複数の粒子を分散させる一体的に形成された樹脂媒質を有することを特徴とする請求項1乃至4のいずれか1つに記載の発光装置。
- 前記粒子群は、最も前記上面側に設けられ、前記バンドギャップが狭い部分を最も高い密度で有する第1の酸化チタン粒子又は酸化亜鉛粒子と、前記第1の酸化チタン粒子又は酸化亜鉛粒子よりも前記基板側に設けられ、前記第1の酸化チタン粒子又は酸化亜鉛粒子よりも低い密度で前記バンドギャップが狭い部分を有する第2の酸化チタン粒子又は酸化亜鉛粒子と、を含むことを特徴とする請求項1乃至5のいずれか1つに記載の発光装置。
- 前記粒子群内の前記複数の粒子は、前記被覆体内において、5~70wt%の範囲内で分散されていることを特徴とする請求項1乃至6のいずれか1つに記載の発光装置。
- 前記複数の酸化チタン粒子又は酸化亜鉛粒子は、粒子本体と、前記粒子本体を被覆する被覆膜と、を有することを特徴とする請求項1乃至7のいずれか1つに記載の発光装置。
- 前記第1の酸化チタン粒子又は酸化亜鉛粒子は、前記被覆体の前記上面から20μm以下の深さの範囲内の領域に分散されていることを特徴とする請求項6に記載の発光装置。
- 前記複数の酸化チタン粒子又は酸化亜鉛粒子は、前記光透過部材の前記側面から所定の距離だけ離間して前記光透過部材の前記側面を取り囲むように前記被覆体内に分散されていることを特徴とする請求項1乃至9のいずれか1つに記載の発光装置。
- 前記所定の距離は、前記光透過部材の前記側面から、前記光透過部材からの出射光の最大強度の1/100以上の光が出射される前記被覆体の前記上面の領域内の位置までの距離であることを特徴とする請求項10に記載の発光装置。
- 前記被覆体は、前記上面に複数の凹凸を有することを特徴とする請求項1乃至11のいずれか1つに記載の発光装置。
- 前記複数の酸化チタン粒子又は酸化亜鉛粒子は、前記発光素子からの放出光における前記被覆体内の波長に対応する平均粒径を有することを特徴とする請求項1乃至6のいずれか1つに記載の発光装置。
- 基板と、
前記基板上に配置された発光素子と、
前記基板上に配置され、前記発光素子の側面を覆い、かつ外部に露出する上面を有する被覆体と、を有し、
前記被覆体は、前記被覆体内に分散された複数の粒子からなる粒子群を有し、
前記粒子群は、前記被覆体の前記上面の近傍だけに分散され、各粒子内において他の部分よりもバンドギャップが狭い部分を有する複数の酸化チタン粒子又は酸化亜鉛粒子を含むことを特徴とする発光装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018116751A JP7117170B2 (ja) | 2018-06-20 | 2018-06-20 | 発光装置 |
EP19180374.1A EP3584846B1 (en) | 2018-06-20 | 2019-06-14 | Light-emitting device |
US16/443,635 US10873010B2 (en) | 2018-06-20 | 2019-06-17 | Light-emitting device |
CN201910531469.0A CN110620172B (zh) | 2018-06-20 | 2019-06-19 | 发光器件 |
Applications Claiming Priority (1)
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JP2018116751A JP7117170B2 (ja) | 2018-06-20 | 2018-06-20 | 発光装置 |
Publications (2)
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JP2019220569A JP2019220569A (ja) | 2019-12-26 |
JP7117170B2 true JP7117170B2 (ja) | 2022-08-12 |
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JP2018116751A Active JP7117170B2 (ja) | 2018-06-20 | 2018-06-20 | 発光装置 |
Country Status (4)
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US (1) | US10873010B2 (ja) |
EP (1) | EP3584846B1 (ja) |
JP (1) | JP7117170B2 (ja) |
CN (1) | CN110620172B (ja) |
Families Citing this family (2)
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US11881546B2 (en) * | 2019-12-05 | 2024-01-23 | Mikro Mesa Technology Co., Ltd. | Device with light-emitting diode |
JP2023139780A (ja) * | 2022-03-22 | 2023-10-04 | スタンレー電気株式会社 | 発光装置及び発光装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010157638A (ja) | 2008-12-27 | 2010-07-15 | Nichia Corp | 発光装置及びその製造方法 |
JP2017108092A (ja) | 2015-11-30 | 2017-06-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017199748A (ja) | 2016-04-26 | 2017-11-02 | スタンレー電気株式会社 | 発光装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3950801B2 (ja) * | 2003-01-31 | 2007-08-01 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
US7911133B2 (en) * | 2007-05-10 | 2011-03-22 | Global Oled Technology Llc | Electroluminescent device having improved light output |
JP5326705B2 (ja) | 2009-03-17 | 2013-10-30 | 日亜化学工業株式会社 | 発光装置 |
DE102009055786A1 (de) * | 2009-11-25 | 2011-05-26 | Osram Opto Semiconductors Gmbh | Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses |
JP2012001585A (ja) * | 2010-06-15 | 2012-01-05 | Sumitomo Bakelite Co Ltd | 複合粒子、組成物、波長変換層および光起電装置。 |
DE102010025608A1 (de) * | 2010-06-30 | 2012-01-05 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
JP2012033823A (ja) * | 2010-08-02 | 2012-02-16 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP5468517B2 (ja) * | 2010-10-19 | 2014-04-09 | パナソニック株式会社 | 半導体発光デバイス |
WO2014016893A1 (ja) * | 2012-07-23 | 2014-01-30 | トヨタ自動車株式会社 | 複合粒子、複合粒子分散体、及び、光起電装置 |
JP2014093311A (ja) * | 2012-10-31 | 2014-05-19 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP6127468B2 (ja) * | 2012-11-22 | 2017-05-17 | 日亜化学工業株式会社 | 発光装置 |
JP2015026753A (ja) * | 2013-07-29 | 2015-02-05 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
JP2016157795A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社小糸製作所 | 発光モジュール |
JP6501699B2 (ja) * | 2015-11-30 | 2019-04-17 | 株式会社吉野工業所 | 注出容器 |
CN108475712B (zh) * | 2015-12-01 | 2021-11-09 | 夏普株式会社 | 图像形成元件 |
KR102446768B1 (ko) * | 2015-12-14 | 2022-09-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
JP2017162942A (ja) * | 2016-03-08 | 2017-09-14 | パナソニックIpマネジメント株式会社 | 発光装置、及び、照明装置 |
JP6304297B2 (ja) * | 2016-04-06 | 2018-04-04 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6332533B2 (ja) | 2016-06-30 | 2018-05-30 | キヤノンマーケティングジャパン株式会社 | 情報処理装置、その処理方法及びプログラム |
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2018
- 2018-06-20 JP JP2018116751A patent/JP7117170B2/ja active Active
-
2019
- 2019-06-14 EP EP19180374.1A patent/EP3584846B1/en active Active
- 2019-06-17 US US16/443,635 patent/US10873010B2/en active Active
- 2019-06-19 CN CN201910531469.0A patent/CN110620172B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010157638A (ja) | 2008-12-27 | 2010-07-15 | Nichia Corp | 発光装置及びその製造方法 |
JP2017108092A (ja) | 2015-11-30 | 2017-06-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017199748A (ja) | 2016-04-26 | 2017-11-02 | スタンレー電気株式会社 | 発光装置 |
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JP2019220569A (ja) | 2019-12-26 |
EP3584846B1 (en) | 2020-12-23 |
CN110620172A (zh) | 2019-12-27 |
US10873010B2 (en) | 2020-12-22 |
CN110620172B (zh) | 2024-06-07 |
US20190393386A1 (en) | 2019-12-26 |
EP3584846A1 (en) | 2019-12-25 |
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