JP7112509B2 - セラミックチューブ - Google Patents
セラミックチューブ Download PDFInfo
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- JP7112509B2 JP7112509B2 JP2020553742A JP2020553742A JP7112509B2 JP 7112509 B2 JP7112509 B2 JP 7112509B2 JP 2020553742 A JP2020553742 A JP 2020553742A JP 2020553742 A JP2020553742 A JP 2020553742A JP 7112509 B2 JP7112509 B2 JP 7112509B2
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- 239000000919 ceramic Substances 0.000 title claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 238000005520 cutting process Methods 0.000 claims description 20
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 17
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 12
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 239000004014 plasticizer Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 238000004898 kneading Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000007872 degassing Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 description 35
- 239000002245 particle Substances 0.000 description 7
- 239000000306 component Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000001993 wax Substances 0.000 description 5
- 241001334146 Rugopharynx delta Species 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Cl 2 Chemical compound 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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Description
Rmr=ηp/L×100・・・(1)
ηp:η1+η2+・・・・+ηn
このような負荷長さ率Rmrに対応する、2種類の負荷長さ率それぞれに対応する切断レベルC(Rrmr)、およびこれら切断レベルC(Rrmr)同士の差を表す切断レベル差(Rδc)も、表面の高さ方向およびこの高さ方向に垂直な方向の表面性状に対応する。切断レベル差(Rδc)が大きい場合、測定の対象とする表面の凹凸は大きいが、小さい場合には、その表面の凹凸は小さく比較的平坦といえる。
2 :上部電極
2a:プラズマ処理装置用部材、ガス通路管
2b:電極板
2c:拡散部
2d:導入孔
2e:保持部材
2f:シャワープレート
3 :下部電極
4 :高周波電源
5 :静電チャック
10:プラズマ処理装置
Claims (10)
- 酸化イットリウムを主成分とするセラミックチューブであって、
内周面の粗さ曲線における25%の負荷長さ率での切断レベルと、前記粗さ曲線における75%の負荷長さ率での切断レベルとの差を表す、前記粗さ曲線における切断レベル差(Rδc)が2μm以下であって、前記切断レベル差(Rδc)の変動係数が0.05~0.6であり、
前記内周面は前記内周面の反対側に位置する外周面よりも珪酸イットリウムを多く含む、セラミックチューブ。 - 前記粗さ曲線における二乗平均平方根粗さ(Rq)の平均値が3.5μm以下であって、前記二乗平均平方根粗さ(Rq)の変動係数が0.05~0.6である、請求項1に記載のセラミックチューブ。
- 前記酸化イットリウムの含有量が98.0質量%以上である、請求項1または2に記載のセラミックチューブ。
- 鉄、コバルトおよびニッケルの少なくともいずれかを含み、前記金属元素の含有量の合計が0.1質量%以下である、請求項1乃至請求項3のいずれかに記載のセラミックチューブ。
- 回折角2θが30°~32°に生じる珪酸イットリウム(Y2SiO5)の前記内周面における最大ピーク強度I1は回折角2θが30°~32°に生じる珪酸イットリウム(Y2SiO5)の前記外周面における最大ピーク強度I2よりも大きい、請求項1乃至請求項4のいずれかに記載のセラミックチューブ。
- 請求項1乃至請求項5のいずれかに記載のセラミックチューブの製造方法であって、
酸化イットリウムを主成分とする粉末、ワックス、分散剤および可塑剤を含む原材料を、容器内に収容し、混練処理してスラリーを得る工程と、
前記スラリーを成形するためのシリンジに供給し、前記スラリーを脱泡処理する工程と、
前記シリンジから前記スラリーを成形型の内部空間に供給し、成形して筒状の成形体を得る工程と、
前記成形体を焼結して焼結体を得る工程と、を含む、セラミックチューブの製造方法。 - 前記スラリーが、前記原材料を収容した前記容器を自公転式撹拌脱泡装置に取り付けた後、自公転混練処理して得られる、請求項6に記載のセラミックチューブの製造方法。
- 請求項1乃至請求項5のいずれかに記載のセラミックチューブを備えた、プラズマ処理装置。
- 前記セラミックチューブが、チャンバー内に配置され、プラズマ生成用ガスから安定したプラズマを発生させるためのガス通路管である、請求項8に記載のプラズマ処理装置。
- 前記セラミックチューブが、プラズマ生成用ガスをチャンバーに供給する部材、およびプラズマ生成用ガスをチャンバーから排出する部材の少なくとも1つである、請求項8に記載のプラズマ処理装置。
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JP2007063595A (ja) | 2005-08-30 | 2007-03-15 | Toshiba Ceramics Co Ltd | Y2o3焼結体からなるセラミックガスノズル |
JP2008260644A (ja) | 2007-04-10 | 2008-10-30 | Ferrotec Ceramics Corp | イットリア焼結体およびプラズマプロセス装置用部材 |
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