JP7109236B2 - 半導体発光装置及びその製造方法 - Google Patents
半導体発光装置及びその製造方法 Download PDFInfo
- Publication number
- JP7109236B2 JP7109236B2 JP2018072290A JP2018072290A JP7109236B2 JP 7109236 B2 JP7109236 B2 JP 7109236B2 JP 2018072290 A JP2018072290 A JP 2018072290A JP 2018072290 A JP2018072290 A JP 2018072290A JP 7109236 B2 JP7109236 B2 JP 7109236B2
- Authority
- JP
- Japan
- Prior art keywords
- wavelength conversion
- semiconductor light
- light
- conversion member
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 82
- 229920005989 resin Polymers 0.000 claims description 77
- 239000011347 resin Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052799 carbon Inorganic materials 0.000 claims description 26
- 229920002050 silicone resin Polymers 0.000 claims description 24
- 239000000945 filler Substances 0.000 claims description 22
- 239000006229 carbon black Substances 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 230000004313 glare Effects 0.000 description 16
- 230000007423 decrease Effects 0.000 description 13
- 230000004907 flux Effects 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 241000872198 Serjania polyphylla Species 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- -1 YAG Chemical compound 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
グレア(%)=(発光部分端面から0.2mm位置での非発光部分の輝度)/(発光部分の平均輝度)×100
で表される(参照:図3)。
光束低下率(%)=(1-(発光部分の光束量/カーボン濃度0のときの発光部分の光束量))×100
で表される。
65%≦R≦95%であり、好ましくは
80%≦R≦90%
である。
10~100ppmであり、発光部分の平均反射率Rは、
65%≦R≦95%
好ましくは、
80%≦R≦90%
である。
101:面実装基板
2、2-1、2-2:青色LED素子
3:透明接着層
4:波長変換部材
5:枠
105:最外枠
6:光反射調整部材
7:光透過性基板
Claims (15)
- 実装基板と、
前記実装基板に搭載された半導体発光素子と、
前記半導体発光素子上に配置された波長変換部材と、
前記半導体発光素子の側面及び前記波長変換部材の側面を直接被覆した光反射調整部材と
を具備し、
前記光反射調整部材は可視光に対する光反射フィラ及び光吸収フィラを含有する灰色樹脂よりなり、
前記光反射フィラは酸化チタンであり、前記光吸収フィラはカーボンブラックであり、
前記灰色樹脂におけるカーボン濃度は10~100ppmである半導体発光装置。 - 前記灰色樹脂は前記光反射フィラを含有する白色樹脂と前記光吸収フィラを含有する黒色樹脂とを所定比で混合したものである請求項1に記載の半導体発光装置。
- 前記灰色樹脂はシリコーン樹脂を主成分とする請求項1に記載の半導体発光装置。
- 前記白色樹脂及び前記黒色樹脂はシリコーン樹脂を主成分とする請求項2に記載の半導体発光装置。
- 前記波長変換部材の大きさは上面視で前記半導体発光素子の発光部の大きさとほぼ同一である請求項1~4のいずれかに記載の半導体発光装置。
- 前記波長変換部材の大きさは上面視で前記半導体発光素子の大きさより小さく、
前記波長変換部材は前記半導体発光素子上に透明接着層によって接着され、
前記透明接着層は前記波長変換部材の側面の下側一部をも被覆する請求項1~4のいずれかに記載の半導体発光装置。 - 前記波長変換部材の下面の大きさは上面視で前記半導体発光素子とほぼ同一であり、
前記波長変換部材の上面の大きさは上面視で前記半導体発光素子の大きさより小さく、
前記波長変換部材の下面近傍の側面は下面側垂直部を構成し、
前記波長変換部材の上面近傍の側面は上面側垂直部を構成し、
前記下面側垂直部と前記上面側垂直部との間の前記波長変換部材の側面は傾斜部を構成する請求項1~4のいずれかに記載の半導体発光装置。 - さらに、前記波長変換部材上に設けられた光透過性基板を具備し、
前記波長変換部材は無機蛍光体層であり、
前記光反射調整部材は前記光透過性基板の側面も被覆した請求項1~4のいずれかに記載された半導体発光装置。 - 前記半導体発光素子の数が2以上であり、前記波長変換部材の数が1である請求項1~4のいずれかに記載の半導体発光装置。
- 前記半導体発光素子の数及び前記波長変換部材の数は2以上の同数であり、
前記各波長変換部材は前記半導体発光素子の1つの上に設けられ、
さらに、前記各波長変換部材上に共通に設けられた1つの光透過性基板を具備する請求項1~4のいずれかに記載の半導体発光装置。 - 実装基板と、
前記実装基板に搭載された半導体発光素子と、
前記半導体発光素子上に配置された波長変換部材と、
前記半導体発光素子の側面及び前記波長変換部材の側面を直接被覆した光反射調整部材と
を具備し、
前記光反射調整部材は可視光に対する光反射フィラ及び光吸収フィラを含有する灰色樹脂よりなり、
前記波長変換部材の下面の大きさは上面視で前記半導体発光素子とほぼ同一であり、
前記波長変換部材の上面の大きさは上面視で前記半導体発光素子の大きさより小さく、
前記波長変換部材の下面近傍の側面は下面側垂直部を構成し、
前記波長変換部材の上面近傍の側面は上面側垂直部を構成し、
前記下面側垂直部と前記上面側垂直部との間の前記波長変換部材の側面は傾斜部を構成する半導体発光装置。 - さらに、前記実装基板上に設けられ、前記光反射調整部材を包囲するための枠を具備する請求項1~11のいずれかに記載の半導体発光装置。
- 光反射フィラを含む第1の樹脂材料を準備する第1の工程と、
光吸収フィラを含む第2の樹脂材料を準備する第2の工程と、
前記第一樹脂材料と前記第2の樹脂材料を混合して灰色樹脂よりなる光反射調整部材を準備する第3の工程と、
実装基板上に半導体発光素子を搭載する第4の工程と、
前記半導体発光素子上に波長変換部材を接着する第5の工程と、
前記半導体発光素子側面および前記波長変換部材側面を光反射調整部材で直接被覆する第6の工程とを具備し、
前記光反射フィラは酸化チタンであり、
前記光吸収フィラはカーボンブラックであり、
前記灰色樹脂はシリコーン樹脂を主成分とし、
前記灰色樹脂におけるカーボン濃度は10~100ppmである半導体発光装置の製造方法。 - 前記第5の工程と前記第6の工程との間に、前記波長変換部材上に光透過性基板を接着する第7の工程を備え、
前記第7の工程において、更に、前記光反射調整部材は前記光透過性基板の側面を覆うようにした請求項13に記載の半導体発光装置の製造方法。 - 前記第6の工程の前に、前記半導体発光素子を囲むように最外枠を前記実装基板上に配置する第8の工程を備える請求項13又は請求項14に記載の半導体発光装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018072290A JP7109236B2 (ja) | 2018-04-04 | 2018-04-04 | 半導体発光装置及びその製造方法 |
US16/373,317 US10825972B2 (en) | 2018-04-04 | 2019-04-02 | Semiconductor light-emitting apparatus having light reflection adjusting member of gray resin and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018072290A JP7109236B2 (ja) | 2018-04-04 | 2018-04-04 | 半導体発光装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019186300A JP2019186300A (ja) | 2019-10-24 |
JP7109236B2 true JP7109236B2 (ja) | 2022-07-29 |
Family
ID=68097419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018072290A Active JP7109236B2 (ja) | 2018-04-04 | 2018-04-04 | 半導体発光装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10825972B2 (ja) |
JP (1) | JP7109236B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10290777B2 (en) | 2016-07-26 | 2019-05-14 | Cree, Inc. | Light emitting diodes, components and related methods |
US11121298B2 (en) | 2018-05-25 | 2021-09-14 | Creeled, Inc. | Light-emitting diode packages with individually controllable light-emitting diode chips |
US11233183B2 (en) * | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11335833B2 (en) * | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
USD902448S1 (en) | 2018-08-31 | 2020-11-17 | Cree, Inc. | Light emitting diode package |
TWI775712B (zh) * | 2019-05-24 | 2022-08-21 | 晶元光電股份有限公司 | 封裝與顯示模組 |
US11101411B2 (en) | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
JP7121294B2 (ja) * | 2019-09-10 | 2022-08-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US20240145640A1 (en) * | 2021-03-22 | 2024-05-02 | Denka Company Limited | Phosphor plate and light emitting device |
JP7502665B2 (ja) | 2022-03-08 | 2024-06-19 | 日亜化学工業株式会社 | 光学部品の製造方法及び光学部品 |
CN116759516A (zh) * | 2022-09-13 | 2023-09-15 | 泉州三安半导体科技有限公司 | 发光装置及发光元件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010157638A (ja) | 2008-12-27 | 2010-07-15 | Nichia Corp | 発光装置及びその製造方法 |
JP2010219324A (ja) | 2009-03-17 | 2010-09-30 | Nichia Corp | 発光装置 |
JP2012251031A (ja) | 2011-06-01 | 2012-12-20 | Nitto Denko Corp | リフレクタ材料および発光ダイオード装置 |
JP2013016588A (ja) | 2011-07-01 | 2013-01-24 | Citizen Electronics Co Ltd | Led発光装置 |
JP2015138838A (ja) | 2014-01-21 | 2015-07-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5644967B2 (ja) | 2014-01-28 | 2014-12-24 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
EP3174109B1 (en) * | 2015-11-30 | 2020-11-18 | Nichia Corporation | Method of manufacturing a light emitting device |
-
2018
- 2018-04-04 JP JP2018072290A patent/JP7109236B2/ja active Active
-
2019
- 2019-04-02 US US16/373,317 patent/US10825972B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010157638A (ja) | 2008-12-27 | 2010-07-15 | Nichia Corp | 発光装置及びその製造方法 |
JP2010219324A (ja) | 2009-03-17 | 2010-09-30 | Nichia Corp | 発光装置 |
JP2012251031A (ja) | 2011-06-01 | 2012-12-20 | Nitto Denko Corp | リフレクタ材料および発光ダイオード装置 |
JP2013016588A (ja) | 2011-07-01 | 2013-01-24 | Citizen Electronics Co Ltd | Led発光装置 |
JP2015138838A (ja) | 2014-01-21 | 2015-07-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10825972B2 (en) | 2020-11-03 |
US20190312187A1 (en) | 2019-10-10 |
JP2019186300A (ja) | 2019-10-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7109236B2 (ja) | 半導体発光装置及びその製造方法 | |
US9166118B2 (en) | Semiconductor light emitting apparatus | |
US10651350B2 (en) | Method of manufacturing light emitting device with light-transmissive members | |
US9576941B2 (en) | Light-emitting device and method of manufacturing the same | |
US8222054B2 (en) | LED light source and chromaticity adjustment method for LED light source | |
JP6387954B2 (ja) | 波長変換部材を用いた発光装置の製造方法 | |
JP6399017B2 (ja) | 発光装置 | |
US20100258830A1 (en) | Semiconductor light-emitting device and manufacturing method of the same | |
JP5698808B2 (ja) | 半導体発光装置 | |
KR20120088273A (ko) | 백라이트 유닛 및 그 제조 방법 | |
JP7235944B2 (ja) | 発光装置及び発光装置の製造方法 | |
JP2019186513A (ja) | 発光装置の製造方法 | |
US10991859B2 (en) | Light-emitting device and method of manufacturing the same | |
JP2018056497A (ja) | 発光装置 | |
EP2223353B1 (en) | Side-emitting, light emitting device with hybrid, top scattering-reflector | |
US11158774B2 (en) | Light-emitting device, light-emitting module, and method of manufacturing light-emitting device | |
JP7111939B2 (ja) | 発光装置及びその製造方法 | |
JP5450680B2 (ja) | 半導体発光装置 | |
US11855242B2 (en) | Light emitting device and method of manufacturing the same | |
JP7212296B2 (ja) | 発光装置 | |
JP2020053364A (ja) | 発光装置 | |
JP7206504B2 (ja) | 発光装置 | |
JP7360054B2 (ja) | 発光装置の製造方法、接合方法、及び、発光装置 | |
WO2024036151A1 (en) | Solid state light emitting components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180411 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190227 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211220 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220628 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220719 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7109236 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |