JP7100192B2 - 多結晶シリコン堆積用電極 - Google Patents
多結晶シリコン堆積用電極 Download PDFInfo
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- JP7100192B2 JP7100192B2 JP2021504335A JP2021504335A JP7100192B2 JP 7100192 B2 JP7100192 B2 JP 7100192B2 JP 2021504335 A JP2021504335 A JP 2021504335A JP 2021504335 A JP2021504335 A JP 2021504335A JP 7100192 B2 JP7100192 B2 JP 7100192B2
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/12—Electrophoretic coating characterised by the process characterised by the article coated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Silicon Compounds (AREA)
Description
この電極は、転倒率を低減すると要求にも適合するよう非常に大きなロッド直径を提供しているが、これまで以上に高い堆積プロセスの要求に対して限界に達している。
米国特許第8,366,892B2号は、2つの構成要素からなるグラファイト電極を記載している。前記電極は、ベース部品と該ベース部品に取り付けられたインサートとからなり、両部品は異なるグラファイトタイプからなる。インサートのグラファイトタイプは、ベース部品のグラファイトタイプよりも比熱伝導率が低い。これは、堆積の開始時に非常に低い熱伝導率の必要性と、堆積の終盤に非常に高い熱伝導率の必要性を満たす。
Ux=((タイプxのバッチの転倒した数/タイプ1のバッチの転倒した数)-1)×100%
例:
タイプ2のバッチの転倒数12
タイプ1のバッチの転倒数20
U2=(12/20-1)×100%=-40
接触面積の減少K=(減少のある接触面積/減少のない接触面積-1)×100%
Claims (11)
- 保持部(12)、前記保持部(12)を収容する、切り欠き(16)を有する底部(14)、所望により前記底部(14)と前記保持部(12)との間に配置された少なくとも1つの中間部材(18)とを備え、
前記部材(12、14、18)の少なくとも2つは、比熱伝導率が異なり、
前記保持部(12)は最も低い比熱伝導率を有し、前記底部(14)は最も高い比熱伝導率を有し、
隣接する部材は、少なくとも部分的に互いに機械的に接触した対向する境界面を有し、それによって接触領域(K、K1、K2)が形成された、電極(10)であって、
前記対向する境界面の少なくとも一つは、接触領域(K、K1、K2)を減少させるために、少なくとも一つの窪み(20、21、22)および/または***、ならびに、前記二つの部材(12、14、18)の間に配置された少なくとも一つの挿入部(32、33、34)を有することを特徴とする、電極。 - 少なくともまたは独占的に、前記保持部(12)の境界面が、少なくとも1つの窪み(20)および/または***を有することを特徴とする、請求項1に記載の電極。
- 前記保持部は、フィラメントロッドを収容するための凹部(30)を有することを特徴とする、請求項1または2に記載の電極。
- 前記窪み(20、21、22、23、24、25)および/または***が点状および/または線形であることを特徴とする、請求項1~3のいずれか一項に記載の電極。
- 前記部材(12、14、18)がグラファイトからなることを特徴とする、請求項1~4のいずれか一項に記載の電極。
- 少なくとも1つの挿入部(32、33、34)が、2つの部材(12、14、18)の間に配置されることを特徴とする、請求項1~5のいずれか一項に記載の電極。
- 前記挿入部(32、33、34)は、前記部材(12、14、18)とは異なる材料からなることを特徴とする、請求項1~6のいずれか一項に記載の電極。
- 前記挿入部(32、33、34)が、石英、炭化ケイ素、窒化ケイ素、窒化ケイ素セラミック、酸化ジルコニウムセラミック、酸化アルミニウムセラミック、および炭素繊維強化カーボンを含む群から選択される材料からなることを特徴とする、請求項1~7のいずれかに記載の電極。
- 前記挿入部(32、33、34)は、1~20W/m・K、好ましくは1~12W/m・K、特に好ましくは1~5W/m・Kの比熱伝導率を有することを特徴とする請求項1~8のいずれか一項に記載の電極。
- 前記挿入部(32、33、34)は、比熱伝導率異方性を有する材料からなることを特徴とする、請求項1~9のいずれか一項に記載の電極。
- 電流の直接通過によって加熱可能な少なくとも1つのフィラメントロッド対を備えた反応容器内で多結晶シリコンを製造するためのプロセスであって、
シリコン含有成分および水素を含む反応ガスを反応器に導入し、
気相から元素シリコンが、前記フィラメントロッド対の表面に堆積する、
ことを含み、
前記フィラメントロッド対が、請求項1~10のいずれか一項に記載の二つの電極(10)により保持され、電流が供給される、プロセス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2018/070466 WO2020020468A1 (de) | 2018-07-27 | 2018-07-27 | Elektrode zum abscheiden von polykristallinem silicium |
Publications (2)
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JP2021532051A JP2021532051A (ja) | 2021-11-25 |
JP7100192B2 true JP7100192B2 (ja) | 2022-07-12 |
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JP2021504335A Active JP7100192B2 (ja) | 2018-07-27 | 2018-07-27 | 多結晶シリコン堆積用電極 |
Country Status (7)
Country | Link |
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US (1) | US11965264B2 (ja) |
EP (1) | EP3830030B1 (ja) |
JP (1) | JP7100192B2 (ja) |
KR (1) | KR102528128B1 (ja) |
CN (1) | CN112203980B (ja) |
TW (1) | TWI696583B (ja) |
WO (1) | WO2020020468A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010133386A1 (de) | 2009-05-18 | 2010-11-25 | Kgt Graphit Technologie Gmbh | Aufnahmekegel für silizium-anzuchtstäbe |
JP2011195438A (ja) | 2010-03-19 | 2011-10-06 | Wacker Chemie Ag | 盛り上げられた縁部を有する円錐状黒鉛電極 |
JP2011195439A (ja) | 2010-03-19 | 2011-10-06 | Wacker Chemie Ag | 黒鉛電極 |
JP2012229144A (ja) | 2011-04-27 | 2012-11-22 | Shin-Etsu Chemical Co Ltd | 多結晶シリコン製造装置および多結晶シリコン製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10101040A1 (de) | 2001-01-11 | 2002-07-25 | Wacker Chemie Gmbh | Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
JP5509578B2 (ja) | 2007-11-28 | 2014-06-04 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置及び製造方法 |
JP5338574B2 (ja) * | 2008-09-09 | 2013-11-13 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
US10494714B2 (en) * | 2011-01-03 | 2019-12-03 | Oci Company Ltd. | Chuck for chemical vapor deposition systems and related methods therefor |
JP5807573B2 (ja) * | 2012-02-01 | 2015-11-10 | トヨタ紡織株式会社 | 車両用シートクッションフレーム |
DE102013214800A1 (de) * | 2013-07-29 | 2015-01-29 | Wacker Chemie Ag | Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren |
DE202013104065U1 (de) | 2013-09-06 | 2013-09-30 | Pryvatne Aktsionerne Tovarystvo "Zavod Napivprovidnykiv" | Halter zum Fixieren von Keimstäben in einem Wachstumsreaktor für polykristallines Silizium |
US20160122875A1 (en) | 2014-11-05 | 2016-05-05 | Rec Silicon Inc | Chemical vapor deposition reactor with filament holding assembly |
CN204938991U (zh) | 2015-09-23 | 2016-01-06 | 新特能源股份有限公司 | 一种石墨组件 |
DE102015220127A1 (de) * | 2015-10-15 | 2017-04-20 | Wacker Chemie Ag | Vorrichtung zur Isolierung und Abdichtung von Elektrodenhalterungen in CVD Reaktoren |
-
2018
- 2018-07-27 CN CN201880093963.7A patent/CN112203980B/zh active Active
- 2018-07-27 EP EP18756375.4A patent/EP3830030B1/de active Active
- 2018-07-27 JP JP2021504335A patent/JP7100192B2/ja active Active
- 2018-07-27 WO PCT/EP2018/070466 patent/WO2020020468A1/de unknown
- 2018-07-27 KR KR1020217004852A patent/KR102528128B1/ko active IP Right Grant
- 2018-07-27 US US17/263,631 patent/US11965264B2/en active Active
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2019
- 2019-07-09 TW TW108124034A patent/TWI696583B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010133386A1 (de) | 2009-05-18 | 2010-11-25 | Kgt Graphit Technologie Gmbh | Aufnahmekegel für silizium-anzuchtstäbe |
JP2011195438A (ja) | 2010-03-19 | 2011-10-06 | Wacker Chemie Ag | 盛り上げられた縁部を有する円錐状黒鉛電極 |
JP2011195439A (ja) | 2010-03-19 | 2011-10-06 | Wacker Chemie Ag | 黒鉛電極 |
JP2012229144A (ja) | 2011-04-27 | 2012-11-22 | Shin-Etsu Chemical Co Ltd | 多結晶シリコン製造装置および多結晶シリコン製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3830030B1 (de) | 2023-06-14 |
KR20210032491A (ko) | 2021-03-24 |
TW202007647A (zh) | 2020-02-16 |
CN112203980A (zh) | 2021-01-08 |
KR102528128B1 (ko) | 2023-05-02 |
US11965264B2 (en) | 2024-04-23 |
EP3830030A1 (de) | 2021-06-09 |
CN112203980B (zh) | 2023-04-21 |
TWI696583B (zh) | 2020-06-21 |
US20210164124A1 (en) | 2021-06-03 |
WO2020020468A1 (de) | 2020-01-30 |
JP2021532051A (ja) | 2021-11-25 |
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