JP7099398B2 - 気相成長方法及び気相成長装置 - Google Patents
気相成長方法及び気相成長装置 Download PDFInfo
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- JP7099398B2 JP7099398B2 JP2019079122A JP2019079122A JP7099398B2 JP 7099398 B2 JP7099398 B2 JP 7099398B2 JP 2019079122 A JP2019079122 A JP 2019079122A JP 2019079122 A JP2019079122 A JP 2019079122A JP 7099398 B2 JP7099398 B2 JP 7099398B2
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- H01L21/02612—Formation types
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Description
複数の処理前のウェーハを、少なくともロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室へ順次搬送する気相成長方法であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長方法において、
所定の頻度で前記キャリアを洗浄する気相成長方法である。
前記第1ロボットを用いて、前記ロードロック室にて待機するキャリアを、処理前のウェーハを搭載しない状態で前記反応室に投入し、
前記反応室を所定の洗浄温度に維持した状態で洗浄用ガスを供給し、
前記第1ロボットを用いて、前記反応室で洗浄を終了したキャリアを前記ロードロック室に搬送する。
複数の処理前のウェーハを、少なくともロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室へ順次搬送する気相成長処理装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長処理装置において、
前記第1ロボットは、前記ロードロック室にて待機するキャリアを、処理前のウェーハを搭載しない状態で前記反応室に投入し、
前記反応室を所定の洗浄温度に維持した状態で洗浄用ガスを供給し、
前記第1ロボットは、前記反応室で洗浄を終了したキャリアを前記ロードロック室に搬送することで、前記キャリアを洗浄する気相成長処理装置である。
11…反応炉
111…反応室
112…サセプタ
113…ガス供給装置
114…ゲートバルブ
115…キャリアリフトピン
12…ウェーハ移載室
121…第1ロボット
122…第1ロボットコントローラ
123…第1ブレード
124…第1凹部
13…ロードロック室
131…第1ドア
132…第2ドア
14…ファクトリインターフェース
141…第2ロボット
142…第2ロボットコントローラ
143…第2ブレード
15…ウェーハ収納容器
16…統括コントローラ
17…ホルダ
171…ホルダベース
172…第1ホルダ
173…第2ホルダ
174…ウェーハリフトピン
C…キャリア
C11…底面
C12…上面
C13…外周側壁面
C14…内周側壁面
WF…ウェーハ
Claims (2)
- ウェーハの外縁を支持するリング状のキャリアを備え、複数の当該キャリアを用いて、
複数の処理前のウェーハを、少なくともロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室へ順次搬送する気相成長方法であって、
前記ロードロック室は、第1ドアを介してファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長方法において、
所定の頻度で前記キャリアを洗浄するには、
前記第1ロボットを用いて、前記ロードロック室にて待機するキャリアを、処理前のウェーハを搭載しない状態で前記反応室に投入し、
前記反応室を所定の洗浄温度に維持した状態で洗浄用ガスを供給して前記キャリアを洗浄し、
前記第1ロボットを用いて、前記反応室で洗浄を終了したキャリアを前記ロードロック室に搬送する気相成長方法。 - ウェーハの外縁を支持するリング状のキャリアを備え、複数の当該キャリアを用いて、
複数の処理前のウェーハを、少なくともロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室へ順次搬送する気相成長処理装置であって、
前記ロードロック室は、第1ドアを介してファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長処理装置において、
前記第1ロボットは、前記ロードロック室にて待機するキャリアを、処理前のウェーハを搭載しない状態で前記反応室に投入し、
前記反応室を所定の洗浄温度に維持した状態で洗浄用ガスを供給し、
前記第1ロボットは、前記反応室で洗浄を終了したキャリアを前記ロードロック室に搬送することで、前記キャリアを洗浄する気相成長処理装置。
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