JP7077202B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP7077202B2 JP7077202B2 JP2018202028A JP2018202028A JP7077202B2 JP 7077202 B2 JP7077202 B2 JP 7077202B2 JP 2018202028 A JP2018202028 A JP 2018202028A JP 2018202028 A JP2018202028 A JP 2018202028A JP 7077202 B2 JP7077202 B2 JP 7077202B2
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- light emitting
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
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- 239000004408 titanium dioxide Substances 0.000 description 5
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
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- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
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- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 2
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
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- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical class [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Optical Elements Other Than Lenses (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Led Devices (AREA)
- Surgical Instruments (AREA)
Description
Polymer)、Al2O3、SINR、スピンオングラス(SOG)を含む。一実施例では、第二光学素子50は、拡散粒子、例えば、二酸化チタン、酸化ジルコニウム、酸化亜鉛、又は酸化アルミニウムを含む。一実施例では、第二光学素子50は、波長変換材料、例えば、染料や蛍光粉、量子ドット(QD;Quantum Dot)材料を含む。
12:波長変換構造
20、200:載置板
30:第一光学素子
50:第二光学素子
52:第三光学素子
54:第四光学素子
56:第五光学素子
58:第六光学素子
59:第七光学素子
101:発光構造
1011、1012:側表面
102、104、106、108:電極
1018、1019:電極パッド
15:絶縁構造
1501、1502、1503:部分
105:透光層
1051:蛍光粉の粒子
1052:基質
201、202、501、502、503、561、562、563、5010、580、583、584、590、593:表面
581、591:斜面
582、592:底面
5840:稜線
5930:窪み
300、301、302、203、203a1、203a2、203b1、203b2、203c1、203c2、203d1、203d2、204、2041、2042:回路層
40:表面層
1000、1000’、2000、3000、4000、5000、5002、6000、7000、7000’、8000、8000’、8002、9000、9000’:発光装置
L0:中心線
L1:光束
C10、C20、C30:端点
C1、C2、C3:接線
AA’、BB’:線
θ、θ1、θ2、θ3:夾角
Claims (9)
- 発光装置であって、
鏡面と、前記鏡面の反対側の底面とを有する載置板;
前記鏡面に形成される発光ユニット;
前記発光ユニットに形成され、且つ側表面及び上表面を有する反射層;及び
前記発光ユニット及び前記反射層を取り囲む第一光学素子を含み、
前記第一光学素子は、前記発光ユニットよりも高く、且つ前記上表面よりも低い最高点を含み、
前記第一光学素子と前記鏡面は、90°よりも小さい夾角を成す、発光装置。 - 請求項1に記載の発光装置であって、
前記発光ユニットに直接接続される第二光学素子をさらに含む、発光装置。 - 請求項2に記載の発光装置であって、
前記第一光学素子及び前記第二光学素子は、異なる屈折率を有する、発光装置。 - 請求項1に記載の発光装置であって、
前記第一光学素子は、前記側表面に直接接続される、発光装置。 - 請求項1に記載の発光装置であって、
前記第一光学素子は、上へ突起した凸面を含む、発光装置。 - 請求項1に記載の発光装置であって、
前記発光装置を通過する仮想中心線をさらに含み、
前記発光装置の光強度が、前記仮想中心線を中心とする実質的に対称な分布を有する、発光装置。 - 発光装置であって、
鏡面と、前記鏡面の反対側の底面とを有する載置板;
前記鏡面に形成される発光ユニット;
前記発光ユニットに形成され、且つ側表面及び上表面を有する反射層;
前記発光ユニット及び前記反射層を取り囲む第一光学素子;及び
前記発光装置を通過する仮想中心線を含み、
前記発光装置の光強度が、前記仮想中心線を中心とする実質的に対称な分布を有し、
前記発光装置の光強度が、前記仮想中心線の両側の40°~60°の角度範囲内で最大値を有し、
前記第一光学素子は、前記発光ユニットよりも高く、且つ前記上表面よりも低い最高点を含む、発光装置。 - 請求項7に記載の発光装置であって、
前記第一光学素子は、前記側表面に直接接続される、発光装置。 - 請求項7に記載の発光装置であって、
前記第一光学素子は、上へ突起した凸面を含む、発光装置。
Priority Applications (1)
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JP2022081797A JP7418496B2 (ja) | 2017-10-26 | 2022-05-18 | 発光装置 |
Applications Claiming Priority (6)
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TW106136977 | 2017-10-26 | ||
TW106136977 | 2017-10-26 | ||
TW107105502 | 2018-02-14 | ||
TW107105502 | 2018-02-14 | ||
TW107129979 | 2018-08-28 | ||
TW107129979 | 2018-08-28 |
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JP2022081797A Division JP7418496B2 (ja) | 2017-10-26 | 2022-05-18 | 発光装置 |
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JP2019080065A JP2019080065A (ja) | 2019-05-23 |
JP2019080065A5 JP2019080065A5 (ja) | 2021-12-02 |
JP7077202B2 true JP7077202B2 (ja) | 2022-05-30 |
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JP2018202028A Active JP7077202B2 (ja) | 2017-10-26 | 2018-10-26 | 発光装置 |
JP2022081797A Active JP7418496B2 (ja) | 2017-10-26 | 2022-05-18 | 発光装置 |
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Country Status (6)
Country | Link |
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US (3) | US10873014B2 (ja) |
JP (2) | JP7077202B2 (ja) |
KR (1) | KR102424005B1 (ja) |
CN (2) | CN109713105B (ja) |
DE (1) | DE102018126783A1 (ja) |
TW (1) | TWI793203B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR102424005B1 (ko) * | 2017-10-26 | 2022-07-25 | 에피스타 코포레이션 | 발광 장치 |
CN111276596B (zh) * | 2018-12-05 | 2024-02-06 | 光宝光电(常州)有限公司 | 发光单元 |
TWM607954U (zh) * | 2020-06-30 | 2021-02-21 | 光森科技有限公司 | 光源模組 |
CN214375712U (zh) | 2020-06-30 | 2021-10-08 | 光森科技有限公司 | 光源模块 |
TWI762071B (zh) * | 2020-12-07 | 2022-04-21 | 友達光電股份有限公司 | 發光二極體結構、其形成方法和背光模組 |
CN114300603A (zh) * | 2021-12-29 | 2022-04-08 | 惠州视维新技术有限公司 | 发光器件及其制备方法、灯板、背光模块以及显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013143430A (ja) | 2012-01-10 | 2013-07-22 | Citizen Holdings Co Ltd | 半導体発光装置及びそれを用いた照明装置 |
JP2014160835A (ja) | 2010-06-29 | 2014-09-04 | Cooledge Lighting Inc | 柔軟な基板を有する電子素子 |
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CN109713105B (zh) | 2022-02-08 |
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US11380828B2 (en) | 2022-07-05 |
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