JP7050940B2 - ナノレベルの単結晶薄膜 - Google Patents
ナノレベルの単結晶薄膜 Download PDFInfo
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- JP7050940B2 JP7050940B2 JP2020541839A JP2020541839A JP7050940B2 JP 7050940 B2 JP7050940 B2 JP 7050940B2 JP 2020541839 A JP2020541839 A JP 2020541839A JP 2020541839 A JP2020541839 A JP 2020541839A JP 7050940 B2 JP7050940 B2 JP 7050940B2
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- 239000010409 thin film Substances 0.000 title claims description 161
- 239000013078 crystal Substances 0.000 title claims description 100
- 230000007704 transition Effects 0.000 claims description 98
- 238000002955 isolation Methods 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 17
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 48
- 238000000034 method Methods 0.000 description 21
- 238000009832 plasma treatment Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JCCYXJAEFHYHPP-OLXYHTOASA-L dilithium;(2r,3r)-2,3-dihydroxybutanedioate Chemical compound [Li+].[Li+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O JCCYXJAEFHYHPP-OLXYHTOASA-L 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
層100の厚みは、10nm~2000nmである。好ましくは、薄膜層100の厚みは、10nm~200nm、300~900nm、又は900nm~1500nmである。
ば、第1の遷移層310及び第2の遷移層320はプラズマ処理に使用される元素、例えばAr元素、N元素等をさらに含んでもよい。ただし、第2の遷移層320におけるAr、N等元素は、第1の遷移層310から拡散されてきたものである。
400に行く方向に漸次低減している。また、LTOISIの第2の遷移層320で、第1の遷移層310から拡散されてきたAr元素がさらに存在してもよい。
割され、且つ、切割して得た試料を定着具1と定着具4との間に設置した。説明の便宜上、ここにLTOISI試料の薄膜層2及び基板層3のみを示している。LTOISI試料の薄膜層2の上面はバインダーで定着具1の下面に粘着され、LTOISI試料の基板層3の下面はバインダーで定着具4の上面に粘着されている。定着具1及び定着具4の直径はいずれも1.5cmである。バインダーが完全に硬化した後、図14に示すように、縦方向からLTOISI試料に引張力Fを加えることで、LTOISI試料のナノレベルの単結晶薄膜層が基板層から離脱するのに必要な引張力の大きさを測定した。引張力が大きければ大きいほど、ナノレベルの単結晶薄膜試料の結合力が大きいことを証明する。表1は異なるH濃度のLTOISI試料に対して結合力測定試験を行って得たデータである。
されるナノレベルの単結晶薄膜の薄膜層の厚みを10nm~2000nmにコントロールし、厚みを5nm以内の精度でコントロールすることができる。後続の化学機械研磨でわずかな量を除去するため、化学機械研磨が薄膜の不均一性を悪化させる影響を十分軽減することができ、薄膜の均一性を30nmより小さくすることができる。
Claims (6)
- 単結晶薄膜層と、
隔離層と、
基板層と、
単結晶薄膜層と隔離層との間に配置される第1の遷移層及び隔離層と基板層との間に配置される第2の遷移層と、を含み、
第1の遷移層は1×1019個の原子/cc~1×1022個の原子/ccである濃度のH元素を含み、
単結晶薄膜層の厚みは、10nm~2000nmであり、隔離層は二酸化ケイ素層であり、隔離層の厚みは0.05μm~4μmであり、第1の遷移層の厚みは2nm~10nmであり、第2の遷移層の厚みは0.5nm~15nmであり、
単結晶薄膜層の材料と基板層の材料は同じであることを特徴とする、単結晶薄膜。 - 単結晶薄膜層の材料は、ニオブ酸リチウム、タンタル酸リチウム又は石英である、請求項1に記載の単結晶薄膜。
- 基板層の材料は、ニオブ酸リチウム、タンタル酸リチウム、シリコン、石英、サファイア又は炭化ケイ素であり、基板層の厚みは0.1mm~1mmである、請求項1に記載の単結晶薄膜。
- 第1の遷移層と第2の遷移層は厚みが異なる、請求項1~3のいずれか一項に記載の単結晶薄膜。
- 単結晶薄膜層から隔離層に行く方向に、第1の遷移層における単結晶薄膜層の元素の含有量は漸次低減し、隔離層の元素の含有量は漸次上昇し、隔離層から基板層に行く方向に、第2の遷移層における隔離層の元素の含有量は漸次低減し、基板層の元素の含有量は漸次上昇する、請求項1~4のいずれか一項に記載の単結晶薄膜。
- 第1の遷移層におけるH元素は、最大濃度位置を有し、且つ、第1の遷移層におけるH元素の濃度は最大濃度位置から隔離層に行く方向に、単結晶薄膜層に行く方向にそれぞれ漸次低減する、請求項1~5のいずれか一項に記載の単結晶薄膜。
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CN201710950965.0 | 2017-10-13 | ||
CN201710950965 | 2017-10-13 | ||
PCT/CN2018/092185 WO2019071978A1 (zh) | 2017-10-13 | 2018-06-21 | 纳米级单晶薄膜 |
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JP2020536841A JP2020536841A (ja) | 2020-12-17 |
JP7050940B2 true JP7050940B2 (ja) | 2022-04-08 |
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US (1) | US20210210673A1 (ja) |
EP (1) | EP3696869A4 (ja) |
JP (1) | JP7050940B2 (ja) |
KR (1) | KR20200040807A (ja) |
CN (2) | CN208385458U (ja) |
WO (1) | WO2019071978A1 (ja) |
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TW202144826A (zh) | 2020-05-20 | 2021-12-01 | 日商日本碍子股份有限公司 | 電光元件用複合基板 |
CN111884616B (zh) * | 2020-07-23 | 2021-04-13 | 中国科学院上海微***与信息技术研究所 | 一种衬底基板/压电材料薄膜结构及其制备方法和应用 |
CN112259675B (zh) * | 2020-10-19 | 2022-10-28 | 济南晶正电子科技有限公司 | 一种具有图案的薄膜键合体、制备方法及电子器件 |
CN112670183A (zh) * | 2020-12-14 | 2021-04-16 | 珠海光库科技股份有限公司 | 一种键合剥离后的铌酸锂晶圆的修复方法和铌酸锂晶圆 |
Citations (4)
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JP2007220782A (ja) | 2006-02-15 | 2007-08-30 | Shin Etsu Chem Co Ltd | Soi基板およびsoi基板の製造方法 |
JP2008153411A (ja) | 2006-12-18 | 2008-07-03 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
JP2017139720A (ja) | 2016-02-02 | 2017-08-10 | 信越化学工業株式会社 | 複合基板および複合基板の製造方法 |
JP2017188550A (ja) | 2016-04-05 | 2017-10-12 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
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EP0647022A3 (en) * | 1993-10-05 | 1996-10-02 | Matsushita Electric Ind Co Ltd | Surface-semiconductor acoustic wave composite device. |
EP0651449B1 (en) * | 1993-11-01 | 2002-02-13 | Matsushita Electric Industrial Co., Ltd. | Electronic component and method for producing the same |
CN100342486C (zh) * | 2003-12-24 | 2007-10-10 | 联合晶圆公司 | 一种在基板上转移制作薄膜的方法 |
JP6396852B2 (ja) * | 2015-06-02 | 2018-09-26 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
CN105321806A (zh) * | 2015-08-21 | 2016-02-10 | 济南晶正电子科技有限公司 | 复合单晶薄膜和制造复合单晶薄膜的方法 |
CN105420674A (zh) * | 2015-12-04 | 2016-03-23 | 济南晶正电子科技有限公司 | 单晶薄膜键合体及其制造方法 |
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2018
- 2018-06-21 CN CN201820963329.1U patent/CN208385458U/zh active Active
- 2018-06-21 CN CN201810644600.XA patent/CN108539009A/zh active Pending
- 2018-06-21 WO PCT/CN2018/092185 patent/WO2019071978A1/zh unknown
- 2018-06-21 KR KR1020207006939A patent/KR20200040807A/ko not_active Application Discontinuation
- 2018-06-21 US US16/755,457 patent/US20210210673A1/en not_active Abandoned
- 2018-06-21 JP JP2020541839A patent/JP7050940B2/ja active Active
- 2018-06-21 EP EP18866112.8A patent/EP3696869A4/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007220782A (ja) | 2006-02-15 | 2007-08-30 | Shin Etsu Chem Co Ltd | Soi基板およびsoi基板の製造方法 |
JP2008153411A (ja) | 2006-12-18 | 2008-07-03 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
JP2017139720A (ja) | 2016-02-02 | 2017-08-10 | 信越化学工業株式会社 | 複合基板および複合基板の製造方法 |
JP2017188550A (ja) | 2016-04-05 | 2017-10-12 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
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CN108539009A (zh) | 2018-09-14 |
WO2019071978A1 (zh) | 2019-04-18 |
EP3696869A4 (en) | 2020-12-09 |
CN208385458U (zh) | 2019-01-15 |
EP3696869A1 (en) | 2020-08-19 |
KR20200040807A (ko) | 2020-04-20 |
US20210210673A1 (en) | 2021-07-08 |
JP2020536841A (ja) | 2020-12-17 |
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